STP80NF10FP
N-channel 100V - 0.012
Ω
- 38A - TO-220FP
Low gate charge STripFET™ II Power MOSFET
General features
Type
STP80NF10FP
V
DSS
100V
R
DS(on)
<0.015
Ω
■
■
■
Exceptional dv/dt capability
100% Avalanche tested
Application oriented characterization
I
D
(1)
38A
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Applications
■
Switching application
TO-220FP
1
2
3
Internal schematic diagram
Order codes
Part number
STP80NF10FP
Marking
P80NF10FP
Package
TO-220FP
Packaging
Tube
April 2006 Rev 1 1/12
www.st.com
12
3
4
5
1
2
Contents
Contents
STP80NF10FP
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP80NF10FP Electrical ratings
Table 1.
Absolute maximum ratings
Symbol Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(2)
P
TOT dv/dt
(3)
E
AS
(4)
V
ISO
T stg
T j
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Insulation withstand voltage (DC)
Storage temperature
Operating junction temperature
1.
Limited by Package
2.
Pulse width limited by safe operating area
3.
I
SD
<80A, di/dt < 300A/µs, V
DD
=80% V
(BR)DSS
4.
Starting Tj = 25°C, I
D
= 80A, V
DD
= 50V
Table 2.
Thermal resistance
Symbol Parameter
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
T l
Maximum lead temperature for soldering purpose
Value
152
45
0.3
9
100
±20
38
27
350
2500
-55 to 175
Unit
A
W
W/°C
V/ns
A
A
V
V mJ
V
°C
Value
3.33
62.5
300
Unit
°C/W
°C/W
°C
3/12
Electrical characteristics STP80NF10FP
(T
CASE
=25°C unless otherwise specified)
Table 3.
On/off states
Symbol Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test condictions Min.
Typ.
Max.
Unit
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating @125°C
V
GS
= ±20V
100
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 40A
2
1
10
±100
V
µA
µA nA
3 4 V
0.012
0.015
Ω
Table 4.
Dynamic
Symbol
g fs
(1)
Parameter
C iss
C oss
C rss
Test condictions
Forward transconductance V
DS
=25V
,
I
D
=40 A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
DS
GS
= 25V, f = 1 MHz,
= 0
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
= 80V, I
D
= 10V
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
= 80A,
Min.
Typ.
80
4300
600
230
140
23
51
Max.
Unit
S
189 pF pF pF nC nC nC
4/12
STP80NF10FP
Table 5.
Switching times
Symbol Parameter
t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test condictions
V
DD
R
G
= 50V, I
= 4.7
Ω,
V
D
= 40A,
GS
=10V
(see Figure 14)
Electrical characteristics
Min.
Typ.
Max.
Unit
40
145
134
115 ns ns ns ns
Table 6.
Source drain diode
Symbol Parameter Test condictions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
SD
SD
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
= 80A, V
GS
=80A, V
DD
= 0
= 50V di/dt = 100A/µs,T j
=150°C
Min Typ.
Max Unit
38
152
1.3
155
850
11
A
A
V ns nC
A
5/12
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1.
Safe operating area Figure 2.
Thermal impedance
STP80NF10FP
Figure 3.
Output characterisics Figure 4.
Transfer characteristics
Figure 5.
Transconductance Figure 6.
Static drain-source on resistance
6/12
STP80NF10FP Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
7/12
Test circuit STP80NF10FP
Figure 12. Switching times test circuit for resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load switching and diode recovery times
Figure 15. Unclamped inductive load test circuit
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
8/12
STP80NF10FP Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data STP80NF10FP
DIM.
G1
H
L2
L3
F1
F2
G
A
E
F
B
D
L4
L5
L6
L7
Ø
1.15
1.15
4.95
2.4
10
MIN.
4.4
2.5
2.5
0.45
0.75
28.6
9.8
2.9
15.9
9
3
TO-220FP MECHANICAL DATA mm.
TYP
16
1.7
1.7
5.2
2.7
10.4
MAX.
4.6
2.7
2.75
0.7
1
30.6
10.6
3.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
L6
L7
L3
L2
L5
L4
1 2 3
10/12
STP80NF10FP
Table 7.
Date
11-Apr-2006
Revision history
Revision
1 First Release
Changes
Revision history
11/12
STP80NF10FP
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