STP110N8F7
Nchannel 80 V, 6.4 mΩ typ., 80 A, STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Order code
STP110N8F7
Features
Order code V
DS
R
DS(on)max
I
D
P
TOT
STP110N8F7 80 V 7.5 mΩ
80 A 170 W
Among the lowest R
DS(on)
on the market
Excellent figure of merit (FoM)
Low C rss
/C iss
ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Table 1: Device summary
Marking Package
110N8F7 TO-220
Packaging
Tube
November 2015 DocID027154 Rev 2
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STP110N8F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package mechanical data ............................................................... 9
4.1
TO-220 package mechanical data .................................................. 10
5 Revision history ............................................................................ 12
2/13 DocID027154 Rev 2
STP110N8F7
1
Electrical ratings
Symbol
V
DS
V
GS
I
D
I
D
I
DM
(2)
P
TOT
E
AS
(3)
T
J
T stg
Electrical ratings
Table 2: Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Notes:
(1)
Limited by package
(2)
Pulse width is limited by safe operating area
(3)
Starting T j
= 25°C, I d
= 25 A, V dd
= 40 V
Symbol
Table 3: Thermal data
Parameter
R thj-case
Thermal resistance junction-case max
R thj-amb
Thermal resistance junction-ambient max
Value
0.88
62.5
-55 to 175
Value
80
±20
80
(1)
76
320
170
220
Unit
°C/W
°C/W
Unit
V
V
A
A
A
W mJ
°C
°C
DocID027154 Rev 2 3/13
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0, I
D
= 250 µA
I
DSS
Zero gate voltage drain current
V
GS
= 0, V
DS
= 80 V
V
GS
= 0, V
DS
= 80 V,
T
C
= 125 °C
I
GSS
V
GS(th)
R
DS(on)
Gate-body leakage current
Gate threshold voltage
Static drain-source on- resistance
V
DS
= 0, V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 40 A
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd t f
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Symbol t d(on) t r t d(off)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
GS
= 0, V
DS
= 40 V, f = 1 MHz
V
DD
= 40 V, I
D
= 80 A,
V
GS
= 10 V
(see Figure 14: "Test circuit for gate charge behavior" )
Min.
80
2.5
Min.
-
-
-
-
-
-
Table 6: Switching times
Test conditions Min.
V
DD
= 40 V, I
D
= 40 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see Figure 13: "Test circuit for resistive load switching times" and
Figure 18: "Switching time waveform" )
-
-
-
-
STP110N8F7
Typ. Max. Unit
6.4
Typ.
3435
653
57
46.8
23.4
11.2
Typ.
49
95
60
32
1
10
4.5
Max. Unit
-
- pF pF
-
-
-
-
V
µA
µA
±100 nA
V
7.5 mΩ
Max. Unit
-
-
- ns ns ns
- pF nC nC nC ns
4/13 DocID027154 Rev 2
STP110N8F7
Symbol Parameter
V
SD
(1)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM
Table 7: Source drain diode
Test conditions
Reverse recovery current
V
GS
= 0, I
SD
= 80 A
I
SD
= 80 A, di/dt = 100 A/µs
V
DD
= 60 V (see Figure 15:
"Test circuit for inductive load switching and diode recovery times" )
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
48.6
58.6
1.2 V ns nC
- 2.4 A
DocID027154 Rev 2 5/13
Electrical characteristics
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area
STP110N8F7
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/13 DocID027154 Rev 2
STP110N8F7
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Source-drain diode forward characteristics
DocID027154 Rev 2 7/13
Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load switching times
STP110N8F7
Figure 14: Test circuit for gate charge behavior
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
8/13 DocID027154 Rev 2
STP110N8F7
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID027154 Rev 2 9/13
Package mechanical data
4.1 TO-220 package mechanical data
Figure 19: TO-220 type A package outline
STP110N8F7
10/13 DocID027154 Rev 2
STP110N8F7
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
Package mechanical data
Table 8: TO-220 type A mechanical data mm
Min. Typ. Max.
4.40
0.61
1.14
0.48
15.25
1.27
4.60
0.88
1.70
0.70
15.75
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
16.40
28.90
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID027154 Rev 2 11/13
Revision history
5
STP110N8F7
Revision history
Date Revision
Table 9: Document revision history
Changes
10-Nov-2014
04-Nov-2015
1
2
Initial release.
Datasheet promoted from target to production data.
Modified: Table 2: "Absolute maximum ratings"
, Table 5: "Dynamic" ,
Table 6: "Switching times" and Table 7: "Source drain diode"
Added: Section 4.1: "Electrical characteristics (curves)"
Minor text changes.
12/13 DocID027154 Rev 2
STP110N8F7
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DocID027154 Rev 2 13/13
