TS110-7
A
High surge voltage 1.25 A SCR for circuit breaker
G
K
K
G
SMBflat-3L
TS110-7UF
G
TO-92 with “GAK” pinout
TS110-7A1
A
K
A
Datasheet
-
production data
Features
• On-state rms current, 1.25 A
• Repetitive peak off-state voltage, 700 V
• Non-repetitive direct surge peak off-state voltage, 1250 V
• Non-repetitive reverse surge peak off-state voltage, 850 V
• Triggering gate current, 100 µA
Description
Thanks to highly sensitive triggering levels, the
TS110-7 series is suitable for circuit breaker applications where the available gate current is limited. Such applications include GFCI (ground fault circuit interrupter), AFCI (arc fault circuit interrupter), RCD (residual current device), and
RCBO (residual current circuit breaker with overload protection).
The 1250 V surge voltage capability of the
TS110-7 enables high robustness of the whole circuit breaker. The low leakage current of the
TS110-7 reduces power consumption over the entire lifetime of the circuit breaker.
The TS110-7 is available in through-hole TO-92 package with GAK pinout and in SMBflat-3L.
June 2014
This is information on a product in full production.
DocID022271 Rev 4 1/10 www.st.com
Characteristics
1 Characteristics
TS110-7
Symbol
Table 1. Absolute ratings (limiting values)
Parameter
I
T(RMS)
IT
I
TSM
I
(AV)
² t dI/dt
On-state rms current (180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state current
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t r
≤ 100 ns
Critical rate of rise of on-state current
Gate open, V
D
= V
BO
, t r
≤ 100 ns
TO-92 T l
= 58 °C
SMBflat-3L T tab
= 110 °C
TO-92 T l
= 58 °C
SMBflat-3L T tab
= 110 °C t p
= 8.3 ms t p
= 10 ms
1st step: one surge every 5 seconds, 25 surges
2nd step: one surge every 5 seconds, 25 surges
I
² t Value for fusing t p
= 10 ms T j initial
= 25 °C t p
= 10 ms
F = 60 Hz T
T j j
= 125 °C
= 25 °C
V
DRM
,
V
RRM
Repetitive peak off-state voltage, gate open T j
= 125 °C
V
V
DSM
RSM
Non-repetitive direct surge peak off-state voltage, R
GK
= 220
Ω
Non-repetitive reverse surge peak off-state voltage, R
GK
= 220
Ω
Peak gate current t t p p
= 50 µs T
= 50 µs T j j
= 25 °C
= 25 °C
I
GM
P
G(AV)
T stg
T j
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range t p
= 20 µs T j
= 125 °C
T j
= 125 °C
Value
1.25
0.8
27
25
25 times 12 A,
25 times 16 A
3.1
100
100
700
1250
850
1.2
0.2
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A
2
S
A/µs
V
V
V
A
W
°C
Symbol
Table 2. Electrical characteristics
Test conditions
I
GT
V
D
= 12 V, R
L
= 140
Ω
V
GT
V
GD
V
D
= V
DRM
, R
L
= 33 k
Ω, R
GK
= 220
Ω
V
RG
I
RG
= 2 mA
I
H
I
L
I
I
T
= 50 mA, R
GK
= 220
Ω
G
= 5 mA, R
GK
= 220
Ω dV/dt V
D
= 67% V
DRM,
R
GK
= 220
Ω
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 25 °C
T j
= 25 °C
T j
= 125 °C
Min.
Max.
Max.
Min.
Min.
Max.
Max.
Min.
Value
1
100
0.8
0.1
7.5
2
2
15
Unit
µA
V
V
V mA mA
V/µs
2/10 DocID022271 Rev 4
TS110-7 Characteristics
Symbol
V
TM
V
T0
R
D
I
DRM
I
RRM
Table 3. Static electrical characteristics
I
TM
= 2.5 A, t p
= 380 µs
Threshold voltage
Dynamic resistance
Test conditions
V
D
= V
DRM
/ V
RRM
, R
GK
= 220
Ω
T j
= 25 °C
T j
= 125 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
Max.
Max.
Max.
Max.
Symbol
R th(j-l)
R th(j-a)
R th(j-c)
Junction to leads (DC)
Junction to ambient (DC)
Junction to case (DC)
Table 4. Thermal resistance
Parameter
S = 5 cm
2
TO-92
TO-92
SMBflat-3L
SMBflat-3L
Value
1.4
0.9
200
1
100
Value
65
160
75
14
Unit
°C/W
Figure 1. Maximum average power dissipation versus average on-state current
1.2
P(W)
α = 30°, 60°, 90°, 120°, 180°, DC
1.0
0.8
0.6
0.4
360°
0.2
0.0
0.0
0.1
0.2
0.3
0.4
I
T(AV)
(A)
0.5
0.6
0.7
α
0.8
0.9
1.0
Figure 2. Average and DC on-state current versus lead temperature (TO-92)
1.4
I
T(AV)
(A)
1.2
1.0
0.8
0.6
0.4
α = 30°, 60°, 90°, 120°, 180°, DC
0.2
0.0
0 25 50
T lead
(°C)
75 100 125
0.6
0.4
0.2
0.0
0
Figure 3. Average and DC on-state current versus lead temperature (SMBflat-3L)
1.4
I
T(AV)
(A)
α = 30°, 60°, 90°, 120°, 180°, DC
1.2
1.0
0.8
25 50 75
T lead
(°C)
100 125
1.2
Figure 4. Average and DC on-state current versus ambient temperature
I
T(AV)
(A)
SMBF-3L
DC
1.0
SMBF-3L
180-
0.8
TO-92
DC
0.6
0.4
0.2
0.0
0
TO-92
180-
25 50
T amb
(°C)
75 100 125
Unit
V
V m
Ω
µA
µA
DocID022271 Rev 4 3/10
10
Characteristics TS110-7
Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration
1.00
K=[Z th(j-a)
/R th(j-a)
]
0.10
TO-92
SMBflat-3L
Copper surface area = 5cm²
0.01
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 6. Relative variation of gate triggering current and voltage, holding and latching current versus T j
I
GT
, I , I , V
GT
[T =25°C]
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
GT
, I , I
L
, V
GT
I
H
& I
L
V
GT
I
GT
-40 -20 0 20 40 60 80 100 120
Figure 7. Relative variation of holding current versus gate-cathode resistance (typical values)
1.5
I [R
GK
] / I [ R
GK
= 220 Ω ]
Figure 8. Relative variation of dV/dt immunity versus gate-cathode resistance (typical values)
10.00
dV/dt[R
GK
] / dV/dt[R
GK
W
D
T = 125°C
V = 0.67 x V
DRM
1.0
1.00
0.5
0.10
0.0
0.1
R
GK
Ω
1.0
10.0
0.01
0 200 400
R
GK
W
600 800
Figure 9. Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values)
2.5
2.0
1.5
1.0
0.5
0.0
0
5.0
4.5
4.0
3.5
3.0
dV/dt[C
GK
] / dV/dt[C
GK
= 100 nF]
Typical value of dV/dt [CGK = 100 nF] = 25 V/µs
T j
= 125°C
V = 0.67 x V
DRM
20 40 60 80
C
GK
(nF)
100 120 140 160 180 200 220
Figure 10. Relative variation of dV/dt immunity versus junction temperature with R
GK
= 220
Ω
(typical values)
6
5
4
3
2
1
0
20
10 dV/dt[ ] / dV/dt[ T j
= 125 °C ]
9
8
7
40 60 80 100
R GK = 220
Ω
V = 0.67 x V
DRM
120
4/10 DocID022271 Rev 4
TS110-7 Characteristics
Figure 11. Surge peak on-state current versus number of cycles
26
24
I
TSM
(A)
14
12
10
8
6
4
2
0
22
20
18
16
TO-92
Repetitive
T
A
=25 °C
1
Non repetitive
T j initial=25 °C
10
SMBF-3L
Repetitive
T
A
=25 °C
Number of cycles
100
One cycle
1000
Figure 12. Non-repetitive surge peak on-state current, and corresponding values of I
2 t
1000
I
TSM
(A), I t (A s)
T j initial=25 °C
100
10
1
0.01
Sinusoidal pulse with width tp < 10 ms
0.10
I
TSM
I²t
1.00
10.00
Figure 13. On-state characteristics (maximum values)
100.0
I
TM
(A)
10.0
1.0
0.1
0.5
T
J
=125°C
1.0
T
J
=25°C
1.5
2.0
V
TM
(V)
2.5
3.0
3.5
4.0
R d
T j
V to max :
=0.9 V
=200 m Ω
4.5
5.0
Figure 14. Thermal resistance junction to ambient versus copper surface under anode
(SMBflat-3L)
120
110
100
90
80
70
60
50
170
160
150
140
130
R th(j-a)
(°C/W)
0 1 2
S(cm²)
Epoxy printed circuit board FR4 copper thickness = 35 µm
3 4 5
DocID022271 Rev 4 5/10
10
AC line transient voltage ruggedness
2 AC line transient voltage ruggedness
TS110-7
In comparison with standard SCRs, the TS110-7 is self-protected against over-voltage. The
TS110-7 switch can safely withstand AC line surge voltages by switching to the on state (for less than 10 ms on 50 Hz mains) to dissipate energy shocks through the load. The load limits the current through the TS110-7. The self-protection against over-voltage is based on an overvoltage crowbar technology. This safety feature works even with high turn-on current ramp up.
Figure 15
represents the TS110-7 in a test environment. It is used to stress the TS110-7 switch according to the IEC 61000-4-5 standard conditions. The TS110-7 folds back safely to the on state as shown in
Figure 16 .
The TS110-7 recovers its blocking voltage capability after the surge and the next zero current crossing. Such a non repetitive test can be done at least 10 times.
Figure 15. Overvoltage ruggedness test circuit for IEC 61000-4-5 standards
Surge generator
AC Mains
Filtering unit
Model of the load
R
1
R
2
60
Ω
60
Ω
C
IN
150 nF
TS110
I
T
V
T
12
Ω
47 nF
Figure 16. Typical current and voltage waveforms across the TS110-7 during
IEC 61000-4-5 standard test
Vpeak = VBO
1.2/50 µs voltage surge
V
0
Ipeak = 25 A
I
0 dI/dt = 100 A/µs
6/10 DocID022271 Rev 4
TS110-7 Package information
•
Epoxy meets UL94, V0
•
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Figure 17. TO_92 dimensions (definitions)
A a
B C
F D E
Table 5. TO-92 dimensions (values)
Dimensions
Ref.
Millimeters Inches
Min.
Typ.
1.35
Max.
Min.
Typ.
0.053
Max.
F a
D
E
A
B
C
4.40
12.70
2.54
4.70
3.70
0.5
0.173
0.500
0.100
0.185
0.146
0.019
For packing information see STMicroelectronics document PD0022 Packing information,
“Axial, through hole, surface mount and chip scale packages for IPAD™, protection, rectifiers, thyristors and ACSs™”.
DocID022271 Rev 4 7/10
10
Package information
8/10
Ref.
c
D
E
A b b4
E1
L
L1
L2 e
Figure 18. SMBflat-3L dimensions (definitions)
A
E E1
D
L 2x
L e b 2x c
L1
L1
L2 2x
L2 b4
Table 6. SMBflat-3L dimensions (values)
Dimensions
Min.
0.90
0.35
1.95
0.15
3.30
5.10
4.05
0.75
Millimeters
Typ.
Inches
Typ.
Max.
1.10
0.65
2.20
0.40
3.95
5.60
4.60
1.50
Min.
0.035
0.014
0.07
0.006
0.130
0.201
0.156
0.030
0.40
0.60
1.60
Figure 19. SMBflat-3L footprint dimensions
0.51
(0.020)
5.84
(0.230)
0.016
0.024
0.063
2.07
(0.082)
2.07
(0.082)
0.51
(0.020)
1.20
(0.047)
3.44
(0.136) millimeters
(inches)
1.20
(0.047)
DocID022271 Rev 4
TS110-7
Max.
0.043
0.026
0.087
0.016
0.156
0.220
0.181
0.059
TS110-7 Ordering information
Figure 20. Ordering information scheme
TS 1 10 - 7 A1 (-AP)
Sensitive SCR series
Current (rms)
1 = 1.25 A
Gate sensitivity
10 = 100 µA
Voltage
7 = 700 V
Package
A1 = TO-92 with “GAK” pinout
UF = SMBflat-3L
Packing mode
-AP = Ammopack (TO_92)
Blank = Bulk (TO-92), 13” tape and reel (SMBflat-3L)
Order code
TS110-7A1
TS110-7A1-AP
TS110-7UF
Table 7. Ordering information
Marking Package Weight Base qty.
TS110-7
TS110-7
TS110-7
T0-92
SMBflat-3L
200 mg
47 mg
2500
2000
5000
Delivery mode
Bulk
Ammopack
Tape and reel 13”
Date
01-Sep-2012
11-Sep-2012
17-Oct-2013
18-Jun-2014
Revision
Table 8. Document revision history
Changes
1
2
3
4
Initial release.
Added SMBflat-3L package.
Corrected typographical error in
Figure 8 .
Updated device name.
DocID022271 Rev 4 9/10
10
TS110-7
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