T835H-8G
Datasheet
8 A - 800 V - 150 °C 8H Triac in D 2 PAK
A2
G
A1
A2
A1
A2
G
D²PAK
Product status link
T835H-8G
Product summary
I
T(RMS)
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GT
T j
max.
8 A
800 V
900 V
35 mA
150 °C
Features
• 8 A medium current Triac
• 800 V symmetrical blocking voltage
• 150 °C maximum junction temperature T j
• Three triggering quadrants
• High noise immunity - static dV/dt
• Robust dynamic turn-off commutation - (dl/dt)c
• ECOPACK2 compliant component
• Molding resin UL94-V0 flammability certified
Applications
• General purpose AC line load control
• AC induction and universal motor control
• Lighting and automation I/O control
• Water heater, room heater and coffee machine
• Home automation smart AC plug
• Inrush current limiter in AC DC rectifiers
Description
Specifically designed to operate at 800 V and 150 °C, the T835H-8G Triac housed in
D 2 PAK provides an enhanced thermal management: this 8 A Triac is the right choice for a compact drive of AC loads and enables the heatsink size reduction.
D 2 PAK package is ideal for compact SMD designs on surface mount boards or insulated metal substrate boards.
Based on the ST high temperature Snubberless technology, it offers higher specified turn off commutation and noise immunity levels up to the T j
max.
The T835H-8G safely optimizes the control of the hardest universal motors, heaters and inductive loads for industrial control and home appliances.
Snubberless is a trademark of STMicroelectronics.
DS13570 - Rev 2 - December 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
T835H-8G
Characteristics
Characteristics
Symbol
I
T(RMS)
I
TSM
I 2 t dl/dt
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GM
P
GM
P
G(AV)
T stg
T j
Table 1. Absolute maximum ratings (limiting values)
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current (full cycle,
T j
initial = 25 °C)
I 2 t value for fusing
Critical rate of rise of on-state current, I
G
= 2 x I
≤ 100 ns, f = 100 Hz
GT
, tr
Repetitive peak off-state voltage
Non Repetitive peak off-state voltage
Peak gate current
Maximum gate power dissipation
Average gate power dissipation
Storage temperature range
Operating junction temperature range
T c
= 139 °C t = 16.7 ms t = 20 ms t p
= 10 ms
T j
= 25 °C t p
= 10 ms, T j
= 25 °C t p
= 20 µs, T j
= 150 °C
T j
= 150 °C
Value
8
84
80
42
100
800
900
4
5
1
-40 to +150
-40 to +150
Symbol
I
GT
V
GT
V
GD
I
L
Table 2. Electrical characteristics (T j
= 25 °C, unless otherwise specified)
Test conditions Quadrants
V
D
= 12 V, R
L
= 30 Ω
V
D
= 12 V, R
L
= 30 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
G
= 1.2 x I
GT
I
H
(1)
dV/dt
(dl/dt)c
(1)
(1)
I
T
= 500 mA, gate open
V
D
= V
R
= 536 V, gate open
Without snubber network
1. For both polarities of A2 referenced to A1.
T j
= 150 °C
I - II - III
I - II - III
I - II - III
I - III
II
T j
= 150 °C
T j
= 150 °C
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Min.
Min.
Value
5
35
1.3
0.15
50
80
35
2000
8
Unit mA mA
V
V mA mA mA
V/µs
A/ms
Unit
A
A
A 2 s
A/µs
W
°C
°C
V
V
A
W
DS13570 - Rev 2 page 2/12
T835H-8G
Characteristics
Symbol
V
TM
(1)
V
TO
(1)
R
D
(1)
Test conditions
I
TM
= 11 A, t p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
R
= V
DRM
= V
RRM
I
DRM
/I
RRM
V
D
= V
R
= 400 V, peak voltage
1. For both polarities of A2 referenced to A1.
Table 3. Static characteristics
T j
25 °C
150 °C
150 °C
25 °C
150°C
150 °C
Max.
Max.
Max.
Max.
Max.
Table 4. Thermal resistance
Symbol
R
R th(j-c) th(j-a)
Junction to case (AC)
Parameter
Junction to ambient (S
CU
(1)
= 2 cm 2 )
1. Scu : copper pad surface under tab, 35 μm copper thickness on FR4 PCB.
Max.
Typ.
Value
1.50
0.83
45
1.5
3.5
1.3
Value
1.2
45
Unit
°C/W
°C/W
Unit
V
V mΩ
µA mA mA
DS13570 - Rev 2 page 3/12
1.1
Characteristics (curves)
6
4
2
0
0
Figure 1. Maximum power dissipation versus on-state
RMS current (full cycle)
10
P(W)
8
α = 180°
2
I
T(RMS)
(A)
4 6
α
8
Figure 2. On-state RMS current versus case temperature
(full cycle)
3
2
5
4
1
0
8
7
6
9
I
T(RMS)
(A)
0 25 50
Tc(°C)
75
α = 180°
100 125 150
Figure 3. On-state RMS current versus ambient temperature (free air convection)
1
0.5
0
0
3.5
3
2.5
2
1.5
4
I
T(RMS)
(A)
25 50
Ta(°C)
75 100
α = 180°
125 150
T835H-8G
Characteristics (curves)
Figure 4. On-state characteristics (maximum values)
100
I TM (A)
Tj max.
Vto = 0.83 V
Rd = 45 mΩ
Tj = 25 °C
10
Tj = 150 °C
1
0 0.5
1 1.5
2
V
TM
(V)
2.5
3 3.5
4 4.5
Figure 5. Relative variation of thermal impedance versus pulse duration
1.0E+00
K = [Zth/Rth]
Zth(j-c)
1.0E-01
Zth(j-a)
1.0E-02
1.0E-03
1.0E-03 1.0E-02 1.0E-01 tp(s)
1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 6. Recommended maximum case-to-ambient thermal resistance versus ambient temperature for different peak off-state voltages
70
Rth(c-a) (°C/W) (for heatsink sizing to avoid thermal runaway)
V
D
= V
R
=400 V
60
V
D
= V
R
= 600 V
V
D
= V
R
= 800 V
50
40
30
20
10
0
20 40 60
Ta (°C)
80 100 120 140
DS13570 - Rev 2 page 4/12
T835H-8G
Characteristics (curves)
Figure 7. Thermal resistance junction to ambient versus copper surface under tab
20
10
0
0
60
50
40
30
80
R th(j-a)
(°C/W)
Epoxy printed circuit board FR4, e
Cu
= 35 µm
70
5 10 15 20 25 30
D²PAK
S
Cu
(cm²)
35 40
Figure 8. Relative variation of leakage current versus junction temperature for different values of blocking voltage
1.0E+00
IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,800 V]
1.0E-01
1.0E-02
1.0E-03
1.0E-04
V
D
= V
R
= 800 V
V
D
= V
R
= 600 V
1.0E-05
25 50 75
Tj(°C)
100 125 150
Figure 9. Relative variation of gate trigger voltage and current versus junction temperature (typical values)
2
I GT ,V GT [Tj] / I GT ,V GT [Tj = 25 °C]
I
GT
Q3
1.5
I
GT
Q1-Q2
1 V
GT
0.5
0
-50 -25 0 25
T j
(°C)
50 75 100 125 150
Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values)
1.6
IH,IL [Tj] / IH,IL [Tj = 25 °C]
1.2
0.8
0.4
0
-50 -25 0 25
IH
IL
Tj (°C)
50 75 100 125 150
Figure 11. Surge peak on-state current versus number of cycles
90
I TSM (A)
80
70
60
50
40
30
20
10
0
1
Repetitive
Tc = 139°C
Non repetitive
Tj initial = 25 °C
10
Number of cycles
100 t =20ms
One cycle
1000
Figure 12. Non repetitive surge peak on-state current for a sinusoidal pulse with width t p
< 10 ms
1000
I TSM (A)
Tj initial = 25 °C
100
10
0.01
dl/dt limitation: 100 A/µs
0.10
t p
(ms)
1.00
I
TSM
10.00
DS13570 - Rev 2 page 5/12
360°
α
T835H-8G
Characteristics (curves)
Figure 13. Relative variation of static dV/dt immunity versus junction temperature
4 dV/dt [Tj] / dV/dt [Tj = 150 °C]
VD = VR = 536 V
3
2
1
0
25 50 75
Tj(°C)
100 125 150
Figure 14. Relative variation of critical rate of decrease of main current versus junction temperature
14
(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]
12
10
8
6
4
2
0
25 50 75
Tj(°C)
100 125 150
α
DS13570 - Rev 2 page 6/12
360°
2
2.1
T835H-8G
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
•
•
•
D²PAK package information
ECOPACK2 compliant
Lead-free package leads finishing
Molding compound resin is halogen-free and meets UL94 flammability standard level V0
E
Figure 15. D²PAK package outline
A c2
E1
E2
1 2 3 b2 b e
G
Max resin gate protrusion: 0.5 mm (1)
A1
A2
A3
R
Gauge Plane c
V2
(1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical.
DS13570 - Rev 2 page 7/12
DS13570 - Rev 2
T835H-8G
D²PAK package information
Table 5. D²PAK package mechanical data
Dimensions
Ref.
H
L
L2
L3
R
V2 (2)
e
E
E1
E2
G b b2 c c2
D
D1
D2
A
A1
A2
A3
Min.
4.30
2.49
0.03
0.70
1.25
0.45
1.21
8.95
7.50
1.30
2.54
10.00
8.30
6.85
4.88
15
1.78
1.19
1.40
0°
Millimeters
Typ.
0.25
0.40
1. Dimensions in inches are given for reference only
2. Degrees
Max.
4.60
2.69
0.23
0.93
1.7
0.60
1.36
9.35
8.00
1.70
10.28
8.70
7.25
5.28
15.85
2.28
1.40
1.75
8°
Min.
0.1693
0.0980
0.0012
0°
0.0276
0.0492
0.0177
0.0476
0.3524
0.2953
0.0512
0.10000
0.3937
0.3268
0.2697
0.1921
0.5906
0.0701
0.0468
0.0551
Inches
(1)
Typ.
0.0098
0.0157
0.4047
0.3425
0.2854
0.2079
0.6240
0.0898
0.0551
0.0689
8°
Max.
0.1811
0.1059
0.0091
0.0366
0.0669
0.0236
0.0535
0.3681
0.3150
0.0669
page 8/12
DS13570 - Rev 2
T835H-8G
D²PAK package information
Figure 16. D²PAK recommended footprint (dimensions are in mm)
16.90
10.30
1.30
5.08
3.70
8.90
Figure 17. D²PAK stencil definitions (dimensions are in mm) page 9/12
3
T835H-8G
Ordering information
Ordering information
Figure 18. Ordering information scheme
T 8 35 H - 8 G - TR
Series
T = Triac
RMS current
8 = 8 A
Gate triggering current
35 = 35 mA
High temperature
H = High noise immunity and robust commutations
Voltage
8 = 800 V
Package
G = D²PAK
Packing
TR = Tape and reel
Blank = Tube
Order code
T835H-8G-TR
T835H-8G
Marking
T835H-8G
Table 6. Ordering information
Package Weight
D 2 PAK 1.6 g
Base qty.
1000
50
Delivery mode
Tape and reel 13”
Tube
DS13570 - Rev 2 page 10/12
Revision history
Date
20-Nov-2020
11-Dec-2020
Table 7. Document revision history
Version
1
2
Changes
Initial release.
Updated general description. Inserted STPOWER logo.
T835H-8G
DS13570 - Rev 2 page 11/12
T835H-8G
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DS13570 - Rev 2 page 12/12
