STTH2003C-Y
Automotive high efficiency ultrafast diode
Datasheet
production data
Features
■
■
■
■
High junction temperature
Combines highest recovery and reverse voltage performance
Ultrafast, soft and noise-free recovery
AEC-Q101 qualified
Description
This dual center tap rectifier is suited for switch mode power supplies and high frequency DC to
DC converters.
Packaged in D
2
PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive applications.
A1
A2
K
K
A1
A2
D2PAK
STTH2003CGY-TR
Table 1.
Device summary
I
F
(AV)
V
RRM
T j
(max)
V
F
(max) t rr
(max)
2 x 10 A
300 V
175 °C
1 V
40 ns
October 2012
This is information on a product in full production.
Doc ID 022396 Rev 1 1/7 www.st.com
7
Characteristics
1 Characteristics
STTH2003C-Y
Table 2.
Symbol
I
F(AV)
I
FSM
T stg
T j
Absolute ratings (limiting values, per diode)
Parameter
V
RRM
I
F(RMS)
Repetitive peak reverse voltage
Forward current rms
Average forward current,
= 0.5
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
T c
= 140 °C
Per diode
Per device t p
= 10 ms sinusoidal (T j
= 25 °C)
Value
300
48
10
20
110
-65 to + 175
-40 to + 175
Table 3.
Symbol
Thermal resistance
Parameter
R th(j-c)
Junction to case
Per diode
Total
Value (Max.)
2.5
1.3
Unit
V
A
A
A
°C
°C
Unit
°C/W
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter Test conditions Min.
I
R
(1)
V
F
(2)
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
V
R
= 300 V
I
F
= 10 A
1.
Pulse test: t p
= 5 ms,
< 2%
2.
Pulse test: t p
= 380 µs,
< 2%
To evaluate the conduction losses use the following equation:
P = 0.75 x I
F(AV)
+ 0.025 I
F
2
(RMS))
Typ.
30
0.85
Max.
20
300
1.25
1
Unit
µA
V
2/7 Doc ID 022396 Rev 1
STTH2003C-Y Characteristics
Table 5.
Symbol
V t t rr fr
FP
Recovery characteristics
Parameter
Reverse recovery time
Forward recovery time
Peak forward voltage
T
T
T j j j
= 25 °C
= 25 °C
= 25 °C
I
RM
Reverse recovery current
S factor Softness factor
T j
= 125 °C
Test conditions
I
F
= 0.5 A, I rr
= 0.25 A
I
R
= 1 A
I
F
= 1 A, V
R
= 30 V dI
F
/dt = -50 A/µs
I
F
= 10 A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
I
F
= 10 A, dI
F
/dt = 100 A/µs
I
F
= 10 A, V
CC
= 200 V dI
F
/dt = 200 A/µs
Min.
Typ.
0.3
Max.
25
40
230
3.5
8
Unit ns ns
V
A
-
10
8
6
4
Figure 1.
Conduction losses versus average forward current (per diode)
Figure 2.
Forward voltage drop versus forward current (maximum values, per diode)
14
P1(W)
200
I
FM
(A)
δ
= 0.05
δ
= 0.1
12
δ
= 0.2
δ
= 0.5
100
δ
= 1
T
10
2
0
0 2 4
I
F(AV)
(A)
6 8
δ
=tp/T
10 tp
12
1
0.50
0.75
1.00
1.25
1.50
V
FM
(V)
1.75
2.00
2.25
2.50
2.75
3.00
Figure 3.
Relative variation of thermal impedance junction to case versus pulse duration
Figure 4.
Peak reverse recovery current versus dI
F
/dt (90% confidence, per diode)
1.0
Z th(j-c)
/R th(j-c)
16
I
RM
(A)
0.8
0.6
0.4
0.2
0.0
1E-3
Single pulse
1E-2 1E-1 1E+0
14
12
10
8
6
4
2
0
0 50
I =0.5 x I
F(AV)
100 150
I =I
F(AV)
200
I =2 x I
F(AV)
250 300 350 400 450 500
Doc ID 022396 Rev 1 3/7
Characteristics STTH2003C-Y
Figure 5.
Reverse recovery time versus dI
F
(90% confidence, per diode)
/dt Figure 6.
Softness factor (tb/ta) versus dI
F
/dt
(typical values, per diode)
100 0.60
S factor
0.50
80
I =I
F(AV)
0.40
60
I =2 x I
F(AV)
I =0.5 x I
F(AV)
0.30
40
0.20
20
0
0
0.10
50 100 150 200 250 300 350 400 450 500
0.00
0 50 100 150 200 250 300 350 400 450 500
Figure 7.
Relative variation of dynamic parameters versus junction temperature (reference: T j
= 125 °C)
Figure 8.
Forward recovery time versus dI
F
/dt
(90% confidence, per diode)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.4
2.2
2.0
1.8
0.0
25 50
S factor
I
RM
75 100 125
500
400
300
200
100
0
0 50 100 150 200 250 300 350
I =I
F(AV)
V
FR
=1.1 x V max.
400 450 500
Figure 9.
Thermal resistance, junction to ambient, versus copper surface under tab
80
R th(j-a) (°C/W)
70
60
50
40
30
20
10
0
0 5 10
Printed circuit board FR4, copper thickness: 35 µm
15
SCu(cm²)
20 25 30 35 40
Figure 10.
Average forward current versus ambient temperature
(
= 0.5
per diode)
12
11
10
9
8
7
6
5
4
3
2
1
0
I
F(AV)
(A)
0 25 50
R th(j-a)
= R th(j-c)
T amb
(°C)
75 100 125 150 175
4/7 Doc ID 022396 Rev 1
STTH2003C-Y Package information
●
●
Epoxy meets UL94, V0
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
Table 6.
D
2
PAK dimensions
Dimensions
L
L2
L3
E
G
B2
B
A1
C2
C
A2
A
R
D
M *
V2
* FLAT ZONE NO LESS THAN 2mm
Ref.
B2
C
C2
D
E
G
A
A1
A2
B
L
L2
L3
M
R
V2
Millimeters
Min.
Max.
4.40
2.49
0.03
0.70
1.14
0.45
1.23
8.95
10.00
4.88
15.00
1.27
1.40
15.85
1.40
1.75
2.40
3.20
0.40 typ.
0° 8°
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
Inches
Min.
Max.
0.173
0.098
0.001
0.027
0.045
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.624
0.055
0.069
0.094
0.126
0.016 typ.
0° 8°
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
0.409
0.208
Figure 11.
Footprint (dimensions in mm)
16.90
10.30
3.70
1.30
5.08
8.90
Doc ID 022396 Rev 1 5/7
Ordering information STTH2003C-Y
Table 7.
Ordering information
Order code Marking
STTH2003CGY-TR STTH2003CGY
Package
D 2 PAK
Weight
1.48 g
Base qty Delivery mode
1000 Tape and reel
Table 8.
Date
Document revision history
Revision
24-Oct-2012 1 Initial release.
Changes
6/7 Doc ID 022396 Rev 1
STTH2003C-Y
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