STMicroelectronics VND5T035LAK-E Datasheet
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VND5T035LAK-E
Double channel high-side driver with analog current sense
for 24 V automotive applications
Datasheet
−
production data
Features
Max transient supply voltage
Operating voltage range
Typ on-state resistance (per ch.)
Current limitation (typ)
Off-state supply current
V
CC
V
CC
R
ON
I
LIM
I
S
58 V
8 to 36 V
35 m Ω
42 A
2 µA
0OWER33/
("1($'5
Application
All types of resistive, inductive and capacitive loads
■
■
■
General
– Very low standby current
– 3.0 V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
– Fault reset standby pin (FR_Stby)
– Optimized for LED application
Diagnostic functions
– Proportional load current sense
– High current sense precision for wide range currents
– Off-state open load detection
– Output short to V
CC
detection
– Overload and short to ground latch off
– Thermal shutdown latch-off
– Very low current sense leakage
Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss of V
CC
– Thermal shutdown
– Electrostatic discharge protection
Description
The VND5T035LAK-E is a monolithic device made using STMicroelectronics
®
VIPower
® technology, intended for driving resistive or inductive loads with one side connected to ground. Active V
CC
pin voltage clamp protects the device against low energy spikes.
The device integrates an analog current sense which delivers a current proportional to the load current.
Fault conditions such as overload, overtemperature or short to V
CC
are reported via the current sense pin.
Output current limitation protects the device in overload conditions. The device latches off in case of overload or thermal shutdown.
The device is reset by a low level pass on the fault reset standby pin.
A permanent low level on the inputs and on the fault reset standby pins disables all outputs and sets the device in standby mode.
September 2013
This is information on a product in full production.
Doc ID 023333 Rev. 3 1/32 www.st.com
1
Contents
Contents
VND5T035LAK-E
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 21
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 21
Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 22
Maximum demagnetization energy (V
= 24 V) . . . . . . . . . . . . . . . . . . . 23
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
PowerSSO-24 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
®
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
PowerSSO-24 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
PowerSSO-24 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
2/32 Doc ID 023333 Rev. 3
VND5T035LAK-E
List of tables
List of tables
< 36 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
FR_Stby
= 5 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Doc ID 023333 Rev. 3 3/32
List of figures
List of figures
VND5T035LAK-E
detection delay time at FR
STBY
activation . . . . . . . . . . . . . . . . . . . . . 15
case
vs T case
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 24
PowerSSO-24 thermal impedance junction ambient single pulse (one channel ON). . . . . 25
Thermal fitting model of a double channel HSD in PowerSSO-24
(1)
. . . . . . . . . . . . . . . . . 25
4/32 Doc ID 023333 Rev. 3
VND5T035LAK-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
V
CC
Signal Clamp
IN1
IN2
FR_Stby
CS1
CS2
Undervoltage
Control & Diagnostic 2
Control & Diagnostic 1
Power
Clamp
DRIVER
V
ON
Limitation
Over
Temperature
Current
Limitation
V
SENSEH
Current
Sense
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
OFF-state
Open-load
CH1
CH2
LOGIC
GND
GAPGCFT00643
Table 1.
Name
V
CC
OUTn
GND
INn
CSn
FR_Stby
Pin function
Function
Battery connection
Power output
Ground connection
Voltage controlled input pin with hysteresis, CMOS compatible. It controls output switch state
Analog current sense pin; it delivers a current proportional to the load current
In case of latch-off for overtemperature/overcurrent condition, a low pulse on the
FR_Stby pin is needed to reset the channel.
The device enters in standby mode if all inputs and the FR_Stby pin are low.
OUT2
OUT1
Doc ID 023333 Rev. 3 5/32
Block diagram and pin description
Figure 2.
Configuration diagram PowerSSO-24 (top view)
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Table 2.
Suggested connections for unused and not connected pins
Connection / pin CurrentSense N.C.
Output Input
Floating X
(1)
X
To ground
Not allowed
Through 10 K
Ω resistor
X Not allowed
FR_Stby
X
Through 10 K
Ω resistor
X
Through 10 K Ω
1.
X: do not care.
6/32 Doc ID 023333 Rev. 3
VND5T035LAK-E Electrical specifications
Figure 3.
Current and voltage conventions
V
FR_Stby
I
FR_Stby
V
INn
I
INn
FR_Stby
INPUTn
V
CC
I
OUTn
OUTPUTn
CURRENT
SENSEn
I
SENSEn
I
S
V
Fn
V
SENSEn
V
OUTn
V
CC
Note:
GND
I
GND
V
Fn
= V
OUTn
- V
CC
during reverse battery condition.
Stressing the device above the ratings listed in Table 3
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied.
Table 3.
Symbol
Absolute maximum ratings
Parameter
V
CC
-V
CC
-I
GND
DC supply voltage
Reverse DC supply voltage
DC reverse ground pin current
I
OUT
-I
OUT
I
IN
DC output current
Reverse DC output current
DC input current
I
FR_Stby
Fault reset standby DC input current
-I
CSENSE
DC reverse CS pin current
V
CSENSE
Current sense maximum voltage
E
MAX
Maximum switching energy
(L = 2.3 mH; V
BAT
= 32 V; T jstart
= 150 °C; I
OUT
= I limL (typ)
)
Value
58
0.3
200
Unit
V
V mA
Internally limited A
40 A
-1 to 10
-1 to 1.5
mA mA
200
V
CC
- 58 to
+V
CC mA
V
250 mJ
Doc ID 023333 Rev. 3 7/32
Electrical specifications
Table 3.
Symbol
L smax
V
ESD
V
ESD
Absolute maximum ratings (continued)
Parameter
Maximum strain inductance in short circuit condition
R
L
= 300 m Ω , V
BAT
= 32 V, T jstart
= 150 °C, l
OUT
= I
LMHmax
Electrostatic discharge
(Human Body Model: R = 1.5 K Ω; C = 100 pF)
– INPUT
– CURRENT SENSE
– FR_Stby
– OUTPUT
– V
CC
Charge device model (CDM-AEC-Q100-011)
T j
T stg
Junction operating temperature
Storage temperature
VND5T035LAK-E
Value Unit
40 µH
4000
2000
4000
5000
5000
750
-40 to 150
-55 to 150
°C
°C
V
V
V
V
V
V
Table 4.
Symbol
Thermal data
Parameter Value Unit
R thj-case
R thj-amb
Thermal resistance junction-case (max) (with one channel ON)
Thermal resistance junction-ambient (max)
2 °C/W
°C/W
8/32 Doc ID 023333 Rev. 3
VND5T035LAK-E Electrical specifications
8 V < V
CC
< 36 V; -40°C < T j
< 150°C, unless otherwise specified.
Table 5.
Symbol
Power section
Parameter Test conditions
V
V
V
CC
USD
USDhyst
Operating supply voltage
Undervoltage shutdown
Undervoltage shutdown hysteresis
V
I
R
I
ON clamp
S
L(off)
On-state resistance
Clamp voltage
Supply current
(1)
Off-state output current
I
OUT
= 3 A; T j
= 25°C
I
OUT
= 3 A; T j
= 150°C
I
S
= 20 mA
Off-state; V
V
IN
= V
OUT
CC
= V
= 24 V; T j
SENSE
= 25°C;
= 0 V
I
On-state; V
CC
OUT
= 0 A
= 24 V; V
IN
= 5 V;
V
IN
T j
= V
OUT
= 25°C
= 0 V; V
CC
= 24 V;
V
IN
T j
= V
OUT
= 125°C
= 0 V; V
CC
= 24 V;
V
F
Output - V
CC
diode voltage
1.
For each channel
2.
PowerMOS leakage included
-I
OUT
= 3 A; T j
= 150°C
Min.
Typ.
Max.
Unit
8
58
24
3.5
0.5
35
64
2
(2)
4.2
0 0.01
0
36
5
70
70
5
(2)
6
3
5
0.7
V
V
V m Ω
V
µA mA
µA
V
Table 6.
Symbol t d(on) t d(off) dV
OUT
/dt
(on) dV
OUT
/dt
(off)
W
ON
W
OFF
Switching (V
CC
= 24 V; T j
= 25 °C)
Parameter Test conditions
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
Turn-off voltage slope
R
L
= 8 Ω
R
L
= 8
Ω
R
L
= 8 Ω
R
L
= 8
Ω
Switching energy losses during t won
Switching energy losses during t woff
R
L
= 8 Ω
R
L
= 8 Ω
Min.
Typ.
Max.
Unit
46
54
0.55
0.46
µs
µs
V/µs
V/µs
1 mJ
0.65
mJ
Doc ID 023333 Rev. 3 9/32
Electrical specifications
Table 7.
Symbol
Logic inputs
Parameter Test conditions
V
IL
I
IL
V
IH
I
IH
V
I(hyst)
Input low level voltage
Low level input current V
IN
= 0.9 V
Input high level voltage
High level input current V
IN
= 2.1 V
Input hysteresis voltage
V
FR_Stby_L
I
V
ICL
FR_Stby_L
Input clamp voltage
I
IN
= 1 mA
I
IN
= -1 mA
Fault_reset_standby low level voltage
Low level fault_reset_standby current
V
FR_Stby
= 0.9 V
V
FR_Stby_H
Fault_reset_standby high level voltage
I
FR_Stby_H
High level fault_reset_standby current
V
FR_Stby
(hyst)
Fault_reset_standby hysteresis voltage
V
FR_Stby
= 2.1 V
V
FR_Stby_CL
Fault_reset_standby clamp voltage
I
FR_Stby
= 15 mA (10 ms)
I
FR_Stby
= -1 mA t t reset stby
Overload latch-off reset time
Standby delay
See
See
Figure 4.
Treset definition
VND5T035LAK-E
Min.
Typ.
Max.
Unit
0.9
1
2.1
0.25
5.5
-0.7
10
7
V
µA
V
µA
V
V
V
0.9
V
1
2.1
µA
V
10 µA
0.25
V
11
2
120
-0.7
15 V
V
µs 24
1200 µs
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10/32 Doc ID 023333 Rev. 3
VND5T035LAK-E
Figure 5.
Tstby definition
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Table 8.
Symbol
Protections and diagnostics
Parameter Test conditions Min.
Typ.
Max.
Unit
I
I limH limL
DC short circuit current
V
CC
= 24V
5 V < V
CC
< 36 V
Short circuit current during thermal cycling
V
CC
= 24 V; T
R
< T j
< T
TSD
T
TSD
T
R
T
RS
Shutdown temperature
Reset temperature
Thermal reset of status
T
HYST
Thermal hysteresis
(T
TSD
-T
R
)
V
DEMAG
Turn-off output voltage clamp
I
OUT
= 3 A; V
L = 6 mH
IN
= 0;
T
30
150
RS
+ 1 T
135
42
10.5
175
RS
7
+ 5
55
55
200
A
A
A
°C
°C
°C
°C
V
CC
- 58 V
CC
- 64 V
CC
- 70 V
V
ON
Output voltage drop limitation
I
OUT
T j
= 150 mA;
= -40°C to 150°C
25 mV
Doc ID 023333 Rev. 3 11/32
Electrical specifications VND5T035LAK-E
Table 9.
Symbol
Current sense (8 V < V
CC
< 36 V)
Parameter Test conditions dK
LED
/K dK dK dK dK dK
0
1
2
3
4
LEDTOT
(1)
/K
/K
/K
/K
/K
0
(1)
1
(1)
2
(1)
3
(1)
4
(1) dK
BULB
/K
BULBTOT
(1)
I
V
V
K
K
LED
K
K
K
K
K
OL
0
1
2
3
4
SENSE0
SENSE
SENSEH
I
I
I
I
I
I
I
OUT
OUT
Current sense ratio drift
Current sense ratio drift
Current sense ratio drift
Current sense ratio drift
Current sense ratio drift
/I
/I
SENSE
SENSE
Current sense ratio drift
OUT
OUT
OUT
/I
/I
/I
SENSE
SENSE
SENSE
Current sense ratio drift
OUT
OUT
/I
/I
SENSE
SENSE
Analog sense leakage current
I
OUT
T j
= 12 mA; V
SENSE
= -40°C to 150°C
= 0.5 V;
I
OUT
T j
= 12 mA; V
SENSE
= 25°C to 150°C
= 0.5 V;
I
OUT
T j
= 60 mA; V
SENSE
= -40°C to 150°C
= 0.5 V;
I
OUT
T j
= 60 mA; V
SENSE
= 25°C to 150°C
= 0.5 V;
I
OUT
I
CAL
T j
= 12 mA to 60 mA;
= 35 mA; V
SENSE
= -40°C to 150°C
= 0.5 V;
I
OUT
T j
= 100 mA; V
SENSE
= -40°C to 150°C
= 0.5 V;
I
OUT
T j
= 100 mA; V
SENSE
= -40°C to 150°C
= 0.5 V;
I
OUT
T j
= 0.8 A; V
SENSE
= -40°C to 150°C
= 1 V;
I
OUT
T j
= 0.8 A; V
SENSE
= -40°C to 150°C
= 1 V;
I
OUT
T j
= 1.6 A; V
SENSE
= -40°C to 150°C
= 2 V;
I
OUT
T j
= 1.6 A; V
SENSE
= -40°C to 150°C
= 2 V;
I
OUT
T j
= 2.4 A; V
SENSE
= -40°C to 150°C
= 4 V;
I
OUT
T j
= 2.4 A; V
SENSE
= -40°C to 150°C
= 4 V;
I
OUT
T j
= 12 A; V
SENSE
= -40°C to 150°C
= 4 V;
I
OUT
T j
= 12 A; V
SENSE
= -40°C to 150°C
= 4 V;
I
OUT
= 1.3 A to 3.2 A;
I
OUTCAL
T j
= 2.2 A; V
SENSE
= -40°C to 150°C
= 2 V;
I
OUT
V
IN
= 0 A; V
SENSE
= 0 V; T j
= 0 V;
= -40°C to 150°C
I
OUT
V
IN
= 0 A; V
SENSE
= 5 V; T j
= 0 V;
= -40°C to 150°C
Max analog sense output voltage
I
OUT
= 12 A; R
SENSE
= 3.9 K Ω
Analog sense output voltage in fault condition
(2)
V
CC
= 24 V; R
SENSE
= 3.9 K Ω
Min.
820
1357
1690
2040
-40
2215
-20
2210
-18
2541
-14
2706
-10
3055
-4
-18
0
0
5
7.5
Typ.
Max.
Unit
4160
7210
6460
40
8.5
9.5
%
4030 6305
20 %
3400 4590
18 %
3385 4059
14 %
3360 3894
10 %
3313 3445
4 %
18
1
2
%
µA
µA
V
V
12/32 Doc ID 023333 Rev. 3
VND5T035LAK-E Electrical specifications
Table 9.
Symbol
Current sense (8 V < V
CC
< 36 V) (continued)
Parameter Test conditions Min.
Δ t t
I
SENSEH
DSENSE2H t
DSENSE2H
DSENSE2L
Analog sense output current in fault condition
(2)
V
CC
= 24 V; V
SENSE
= 5 V
Delay response time from rising edge of
INPUT pin
V
SENSE
< 4 V;
0.2 A < I
OUT
I
SENSE
< 12 A;
= 90 % of I
SENSE max
;
)
Delay response time between rising edge of output current and rising edge of current sense
V
SENSE
< 4 V;
I
SENSE
= 90 % of I
SENSEMAX
;
I
OUT
= 90 % of I
I
OUTMAX
OUTMAX
= 3 A (see
;
)
Delay response time from falling edge of
INPUT pin
V
SENSE
< 4 V;
0.2 A < I
OUT
< 12 A;
I
SENSE
= 10 % of I
(see
)
SENSE max
;
4.9
1.
Parameter guaranteed by design; it is not tested.
2.
Fault condition includes: power limitation, overtemperature and open load in off-state condition.
Typ.
Max.
Unit
9
200
5
12
400
250
20 mA
µs
µs
µs
Table 10.
Open-load detection (V
FR_Stby
= 5 V)
Symbol Parameter Test conditions Min.
Typ.
Max.
Unit t
V
OL
DSTKON
Open-load off-state voltage detection threshold
Output short circuit to
V
CC
detection delay at turn off
V
IN
See
= 0 V; 8 V < V
CC
< 36 V 2
180
I
L(off2) td_vol
Off-state output current at V
OUT
= 4V
V
IN
= 0 V; V
SENSE
= 0 V;
V
OUT rising from 0 V to 4 V
Delay response from output rising edge to
V
SENSE rising edge in open-load
V
V
R
OUT
= 4 V; V
SENSE
SENSE
IN
= 0 V;
= 90 % of V
= 3.9 K
SENSEH
; t
DFRSTK_ON
Output short circuit to
V
CC
detection delay at
FRSTBY activation
See
; Input
1,2
= low
-120
4
1800
0
20
50
V
µs
µA
µs
µs
Doc ID 023333 Rev. 3 13/32
Electrical specifications
Figure 6.
Current sense delay characteristics
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Open-load off-state delay timing
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Switching characteristics
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14/32 Doc ID 023333 Rev. 3
VND5T035LAK-E Electrical specifications
Figure 9.
Output stuck to V
CC
detection delay time at FR
STBY
activation
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Delay response time between rising edge of output current and rising edge of current sense
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Doc ID 023333 Rev. 3 15/32
Electrical specifications
Figure 11.
Output voltage drop limitation
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Device behavior in overload condition
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16/32 Doc ID 023333 Rev. 3
VND5T035LAK-E
Table 11.
Truth table
Conditions
Fault reset standby
Standby
Normal operation
Overload
Overtemperature / short to ground
Undervoltage
Short to V
BAT
Open load off-state
(with pull-up)
X
X
X
L
H
X
L
H
X
L
H
X
L
X
X
Negative output voltage clamp
X
Input
L
H
L
H
H
X
L
L
H
L
L
H
L
L
H
L
Output
L
H
L
Cycling
Latched
L
H
H
H
H
H
H
L
L
H
Negative
Electrical specifications
Sense
0
0
Nominal
0
> Nominal
0
V
SENSEH
V
SENSEH
0
0
V
SENSEH
< Nominal
0
V
SENSEH
0
0
Doc ID 023333 Rev. 3 17/32
Electrical specifications VND5T035LAK-E
Table 12.
Electrical transient requirements (part 1)
Test levels
(1)
ISO 7637-2:
2004(E)
Test pulse
III IV
Number of pulses or test times
Burst cycle/pulse repetition time
1
2a
3a
- 450 V
+ 37 V
- 150 V
- 600 V
+ 50 V
- 200 V
5000 pulses
5000 pulses
1h
0.5 s
0.2 s
90 ms
5 s
5 s
100 ms
3b + 150 V + 200 V 1h 90 ms
4
5b
(1)
- 12 V
+ 123 V
- 16 V
+ 174 V
1 pulse
1 pulse
1.
Valid in case of external load dump clamp: 58 V maximum referred to ground.
100 ms
Delays and impedance
1 ms, 50 Ω
50 µs, 2 Ω
0.1 µs, 50 Ω
0.1 µs, 50 Ω
100 ms, 0.01
Ω
350 ms, 1
Ω
Table 13.
Electrical transient requirements (part 2)
(1)
Test level results ISO 7637-2:
2004(E)
Test pulse
III IV
1
2a
C
C
C
C
3a
3b
(2)
3b
(3)
C
E
C
C
E
C
4
5b
(4)
C C
C C
1.
In order to guarantee the ISO transient classes a minimum 10K
Ω
protection resistors are needed on logic pins
2.
Without capacitor between V
CC
and GND.
3.
With 10 nF between V
CC
and GND.
4.
External load dump clamp, 58 V maximum, referred to ground.
Table 14.
Electrical transient requirements (part 3)
Class Contents
C
E
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
18/32 Doc ID 023333 Rev. 3
VND5T035LAK-E
Figure 13.
Off-state output current
,ORII>Q$@
Electrical specifications
Figure 14.
High-level input current
,LK>X$@
9FF 9
9LQ 9RXW
9LQ 9
7F> &@
Figure 15. Input clamp voltage
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Figure 16. High-level input voltage
9LK>9@
*$3*&)7
,LQ P$
7F> &@
Figure 17. Low-level input voltage
9LO>9@
*$3*&)7
7F> &@
Figure 18. Input hysteresis voltage
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*$3*&)7
7F> &@
*$3*&)7
Doc ID 023333 Rev. 3
7F> &@
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19/32
Electrical specifications VND5T035LAK-E
Figure 19. On-state resistance vs T case
5RQ>P2KP@
Figure 20. On-state resistance vs V
CC
5RQ>P2KP@
7F &
7F &
7F &
7F> &@
Figure 21. I
LIMH
vs T case
,OLP+>$@
,RXW $
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,RXW $
9FF>9@
Figure 22. Turn-on voltage slope
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7F> &@
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Figure 23. Turn-off voltage slope
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Doc ID 023333 Rev. 3
VND5T035LAK-E Application information
Figure 24.
Application schematic
9
0&8
5
SURW
)5B6WE\
5
SURW
5
SURW
&
H[W
5
6(16(
,1
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3.1
3.1.1
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
GND
only)
This solution can be used with any type of load.
The following is an indication on how to dimension the R
GND resistor.
1.
R
GND
≤ 600 mV / (I
S(on)max
)
2. R
GND
≥ (−
V
CC
) / (-I
GND
) where -I
GND
is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet.
Power dissipation in R
GND
(when V
CC
< 0: during reverse battery situations) is:
P
D
= (-V
CC
)
2
/ R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND produces a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output values. This shift varies depending on how many devices are ON in case of several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests Solution 2 is used (see below).
Doc ID 023333 Rev. 3 21/32
Application information
3.1.2
VND5T035LAK-E
Solution 2: diode (D
GND
) in the ground line
A resistor (R
GND inductive load.
= 4.7 k
Ω) should be inserted in parallel to D
GND
if the device drives an
This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (
≈
600 mV) in the input threshold and in the status output values, if the microprocessor ground is not common to the device ground. This shift does not vary if more than one HSD shares the same diode/resistor network.
3.2 Load dump protection
D ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds to
V
CC
maximum DC rating. The same applies if the device is subject to transients on the V
CC line that are greater than the ones shown in the ISO T/R 7637/2 table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient is present on the V
CC
line, the control pins are pulled negative. ST suggests that a resistor (R prot
) have to be inserted in line to prevent the microcontroller I/O pins from latching-up.
The value of these resistors is a compromise between the leakage current of the microcontroller and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os.
-V
CCpeak
/I latchup
≤
R prot
≤
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= -600 V and I latchup
≥
20 mA; V
OH
μ
C
≥
4.5 V
30 k
Ω ≤
R prot
≤
180 k
Ω
.
Recommended R prot value is 60 k
Ω.
22/32 Doc ID 023333 Rev. 3
VND5T035LAK-E
3.4 Maximum demagnetization energy (V
CC
Application information
= 24 V)
Figure 25.
Maximum turn-off current versus inductance
&
%
9
,1
,
/
A: T jstart
= 150°C single pulse
B: T jstart
= 100°C repetitive pulse
C: T jstart
= 125°C repetitive pulse
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*$3*&)7
W
Values are generated with R
L
= 0
Ω
. In case of repetitive pulses, T jstart
(at the beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves A and B.
Doc ID 023333 Rev. 3 23/32
Package and PCB thermal data
4 Package and PCB thermal data
4.1 PowerSSO-24 thermal data
Figure 26.
PowerSSO-24 PC board
VND5T035LAK-E
.
("1($'5
1.
Layout condition of R th
and Z minimum pad lay-out to 8 cm th
2
).
measurements (PCB: double layer, thermal vias, FR4 area = 77 mm x
86 mm, PCB thickness = 1.6 mm, Cu thickness = 70
μ m (front and back side), Copper areas: from
Figure 27.
R thj-amb
vs PCB copper area in open box free air condition (one channel ON)
5
7+MBDPE
&:
24/32
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*$3*&)7
Doc ID 023333 Rev. 3
VND5T035LAK-E Package and PCB thermal data
Figure 28.
PowerSSO-24 thermal impedance junction ambient single pulse (one channel ON)
=
7+
&:
$
%
&
A: Cu = Footprint
7LPHV
B: Cu = 2 cm
2
*$3*&)7
C: Cu = 8 cm
2
Figure 29.
Thermal fitting model of a double channel HSD in PowerSSO-24
(1)
("1($'5
1.
The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered
Doc ID 023333 Rev. 3 25/32
Package and PCB thermal data
Equation 1: Pulse calculation formula
Z
TH δ
= R
TH
⋅ δ
+ Z
THtp
(
1 –
δ ) where δ = t
P
/T
Table 15.
Thermal parameters
Area/island (cm
2
)
R1 (°C/W)
R2 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
R7 (°C/W)
R8 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
C7 (W.s/°C)
C8 (W.s/°C)
0,1
0,5
1
2.2
0,5
0.75
0,005
0,05
0,005
0,05
Footprint
0,5
0.75
1
7.7
9
28
VND5T035LAK-E
—
—
9
17
—
—
—
—
—
—
8
—
—
—
—
8
10
—
—
4
5
—
—
—
—
—
—
2
—
—
—
—
9
17
26/32 Doc ID 023333 Rev. 3
VND5T035LAK-E
5
Package and packing information
Package and packing information
5.1 ECOPACK
®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
5.2 PowerSSO-24 package information
Figure 30.
PowerSSO-24 package dimensions
Doc ID 023333 Rev. 3 27/32
Package and packing information
Table 16.
PowerSSO-24 mechanical data
Symbol e3
G
G1
H h k
L
N
X
Y
D
E e b c
A
A2 a1
Min.
2.15
2.15
0
0.33
0.23
10.10
7.4
10.1
0.55
4.1
6.5
Millimeters
Typ.
0.8
8.8
5°
VND5T035LAK-E
0.85
10º
4.7
7.1
0.1
0.06
10.5
0.4
Max.
2.47
2.40
0.075
0.51
0.32
10.50
7.6
28/32 Doc ID 023333 Rev. 3
VND5T035LAK-E
5.3
Package and packing information
PowerSSO-24 packing information
Figure 31.
PowerSSO-24 tube shipment (no suffix)
C
B
A
GAPGCFT00002
Base Q.ty
Bulk Q.ty
49
1225
Tube length (± 0.5) 532
A 3.5
B
C (± 0.1)
13.8
0.6
All dimensions are in mm.
Figure 32.
PowerSSO-24 tape and reel shipment (suffix “TR”)
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("1($'5
Doc ID 023333 Rev. 3 29/32
Order codes VND5T035LAK-E
Table 17.
Device summary
Package
PowerSSO-24
Tube
VND5T035LAK-E
Order codes
Tape and reel
VND5T035LAKTR-E
30/32 Doc ID 023333 Rev. 3
VND5T035LAK-E Revision history
Table 18.
Document revision history
Date Revision
15-Jun-2012
19-Jun-2012
18-Sep-2013
1
2
3
Changes
Initial release.
Changed document state form “Target specification“ to “Production data“
Updated disclaimer.
Doc ID 023333 Rev. 3 31/32
VND5T035LAK-E
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