STMicroelectronics VND5T100AJ-E Datasheet
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VND5T100AJ-E
Double channel high-side driver with analog current sense for 24 V automotive applications
Datasheet
-
production data
– Self limiting of fast thermal transients
– Protection against loss of ground and loss of V
CC
– Thermal shutdown
– Electrostatic discharge protection
PowerSSO-12
Features
Application
All types of resistive, inductive and capacitive loads
Max transient supply voltage
Operating voltage range
Typ on-state resistance (per ch.)
Current limitation (typ)
Off-state supply current
1.
Typical value with all loads connected.
V
CC
V
CC
R
ON
I
LIM
I
S
58 V
8 to 36 V
100 m Ω
22 A
2 µA
(1)
• General
– Very low standby current
– 3.0 V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– Compliant with European directive
2002/95/EC
– Fault reset standby pin (FR_Stby)
• Diagnostic functions
– Proportional load current sense
– High current sense precision for wide range currents
– Off-state open-load detection
– Output short to V
CC
detection
– Overload and short to ground latch-off
– Thermal shutdown latch-off
– Very low current sense leakage
• Protection
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
Description
The VND5T100AJ-E is a monolithic device made using STMicroelectronics
®
VIPower
®
technology, intended for driving resistive or inductive loads with one side connected to ground. Active V
CC pin voltage clamp protects the device against low energy spikes.
This device integrates an analog current sense which delivers a current proportional to the load current.
Fault conditions such as overload, overtemperature or short to V
CC
are reported via the current sense pin.
Output current limitation protects the device in overload condition. The device latches off in case of overload or thermal shutdown.
The device is reset by a low level pass on the fault reset standby pin.
A permanent low level on the inputs and fault reset standby pin disables all outputs and sets the device in standby mode.
March 2016
This is information on a product in full production.
DocID018513 Rev 3 1/32 www.st.com
Contents
Contents
VND5T100AJ-E
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 21
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 21
Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 22
Maximum demagnetization energy (V
= 24 V) . . . . . . . . . . . . . . . . . . . 23
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
PowerSSO-12 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
PowerSSO-12 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
2/32 DocID018513 Rev 3
VND5T100AJ-E
List of tables
List of tables
CC
= 24 V; T j
= 25 °C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
< 36 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DocID018513 Rev 3 3/32
3
List of figures
List of figures
VND5T100AJ-E
definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
detection delay time at FRSTBY activation . . . . . . . . . . . . . . . . . . . . 14
case
vs T case
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 24
PowerSSO-12 thermal impedance junction ambient single pulse (one channel ON). . . . . 25
4/32 DocID018513 Rev 3
VND5T100AJ-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1. Block diagram
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Name
V
CC
OUTn
GND
INn
CSn
FR_Stby
Table 1. Pin function
Function
Battery connection
Power output
Ground connection
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output switch state
Analog current sense pin, delivers a current proportional to the load current
In case of latch-off for OT/overcurrent condition, a low pulse on the FR_Stby pin is needed to reset the channel.
The device enters in standby mode if all inputs and the FR_Stby pin are low.
DocID018513 Rev 3 5/32
31
Block diagram and pin description
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Table 2. Suggested connections for unused and not connected pins
Connection / pin Current sense N.C.
Output Input FR_Stby
Floating
To ground
Not allowed
Through 10 k Ω resistor
X
X
X
Not allowed
X
Through
10 k Ω resistor
X
Through
10 k Ω resistor
6/32 DocID018513 Rev 3
VND5T100AJ-E Electrical specifications
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Stressing the device above the ratings listed in Table 3
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to the conditions reported in this section for extended periods may affect device reliability.
Symbol
Table 3. Absolute maximum ratings
Parameter
V
CC
-V
CC
-I
GND
I
OUT
-I
OUT
I
IN
DC supply voltage
Reverse DC supply voltage
DC reverse ground pin current
DC output current
Reverse DC output current
DC input current
I
FR_Stby
-I
CSENSE
Fault reset standby DC input current
DC reverse CS pin current
V
CSENSE
Current sense maximum voltage
E
MAX
Maximum switching energy
(L = 1.9 mH; V bat
= 32 V; T jstart
= 150 °C; I
OUT
= I limL
(Typ))
Value
58
0.3
200
Internally limited
20
-1 to 10
-1 to 1.5
200
V
CC
- 58 to +V
CC
70 mJ
Unit
A mA mA mA
V
V
V mA
A
DocID018513 Rev 3 7/32
31
Electrical specifications VND5T100AJ-E
Symbol
V
ESD
V
ESD
T j
T stg
L
Smax
Table 3. Absolute maximum ratings (continued)
Parameter Value
Electrostatic discharge
(Human Body Model: R = 1.5 k Ω; C = 100 pF)
– INPUT
– CURRENT SENSE
– FR_STBY
– OUTPUT
– V
CC
Charge device model (CDM-AEC-Q100-011)
Junction operating temperature
Storage temperature
Maximum stray inductance in short circuit
R
L
= 300 m Ω , V bat
= 32 V, T jstart
= 150 °C, I
OUT
= I limHmax
40
4000
2000
4000
5000
5000
750
-40 to 150
-55 to 150
Unit
V
V
V
V
V
V
°C
°C
µH
Symbol
R thj-case
R thj-amb
Table 4. Thermal data
Parameter
Thermal resistance junction-case (with one channel ON)
Thermal resistance junction-ambient
Maximum value Unit
6 °C/W
See
8/32 DocID018513 Rev 3
VND5T100AJ-E Electrical specifications
8 V < V
CC
< 36 V; -40 °C < T j
< 150 °C, unless otherwise specified.
.
Symbol Parameter
Table 5. Power section
Test conditions
V
CC
V
USD
Operating supply voltage
Undervoltage shutdown
V
USDhyst
Undervoltage shutdown hysteresis
V
R
ON clamp
On-state resistance
Clamp voltage
(1)
I
OUT
= 1.5 A; T j
= 25 °C
I
OUT
= 1.5 A; T j
= 150 °C
I
S
= 20 mA
Off-state: V
CC
= 24 V; T j
= 25 °C;
V
IN
= V
OUT
= V
SENSE
= 0 V
I
I
S
L(off)
Supply current
Off-state output current
On-state: V
CC
= 24 V; V
IN
= 5 V;
I
OUT
= 0 A
V
IN
= V
OUT
= 0 V; V
CC
= 24 V;
T j
= 25 °C
V
IN
= V
OUT
= 0 V; V
CC
= 24 V;
T j
= 125 °C
V
F
Output - V
CC
diode voltage -I
OUT
= 1.5 A; T j
= 150 °C
1.
For each channel.
2.
PowerMos leakage included
Min. Typ.
Max.
Unit
8 24
3.5
36
5
V
V
58
0
0
0.5
100
64
2
(2)
4.2
0.01
200
70
6
3
5
0.7
V m
V
V
Ω
µA mA
µA
Symbol t d(on) t d(off) dV
OUT
/dt
(on) dV
OUT
/dt
(off)
W
ON
W
OFF
Table 6. Switching (V
CC
= 24 V; T j
= 25 °C)
Parameter Test conditions Min.
Typ.
Max.
Unit
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
Turn-off voltage slope
R
L
= 16 Ω
R
L
= 16
Ω
R
L
= 16 Ω
R
L
= 16
Ω
Switching energy losses during t won
R
L
= 16 Ω
Switching energy losses during t woff
R
L
= 16 Ω
27
38
1
0.65
0.23
0.26
µs
µs
V / µs
V
/
µs mJ mJ
Symbol
V
IL
I
IL
V
IH
Parameter
Table 7. Logic inputs
Test conditions
Input low level voltage
Low level input current
Input high level voltage
V
IN
= 0.9 V
Min.
Typ.
Max.
Unit
0.9
1
2.1
V
µA
V
DocID018513 Rev 3 9/32
31
Electrical specifications VND5T100AJ-E
Symbol
Table 7. Logic inputs (continued)
Parameter Test conditions
V
I
V
V
I
IH
I(hyst)
V
ICL
FR_Stby_L
FR_Stby_L
FR_Stby_H
High level input current
Input hysteresis voltage
V
IN
= 2.1 V
Input clamp voltage
I
IN
= 1 mA
I
IN
= -1 mA
Fault_reset_standby low level voltage
Low level fault_reset_standby current
Fault_reset_standby high level voltage
V
FR_Stby
= 0.9 V
I
FR_Stby_H
High level fault_reset_standby current
V
FR_Stby
= 2.1 V
V
FR_Stby (hyst)
Fault_reset_standby hysteresis voltage
V
FR_Stby_CL
Fault_reset_standby clamp voltage
I
FR_Stby
= 15 mA
(t < 10 ms)
I
FR_Stby
= -1 mA
Overload latch-off reset time See Figure 4
t reset t stby
Standby delay
Min.
Typ.
Max.
Unit
10
0.25
5.5
-0.7
7
µA
V
V
V
0.9
V
1
2.1
0.25
µA
V
10 µA
V
11 15 V
2
120
-0.7
24
V
µs
1200 µs
Figure 4. T standby
definition
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VND5T100AJ-E Electrical specifications
Figure 5. T reset
definition
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I limH
Table 8. Protections and diagnostics
Parameter Test conditions Min.
DC short circuit current
V
CC
= 24 V
5 V < V
CC
< 36 V
V
CC
= 24 V;
T
R
< T j
< T
TSD
16
I limL
Short circuit current during thermal cycling
Shutdown temperature T
TSD
T
R
T
RS
Reset temperature
T
HYST
V
DEMAG
Thermal reset of status
Thermal hysteresis
(T
TSD
- T
R
)
Turn-off output voltage clamp
V
ON
Output voltage drop limitation
I
OUT
= 1.5 A; V
L = 6 mH
IN
= 0;
I
OUT
= 50 mA;
T j
= -40 °C to 150 °C
Typ.
22
6
150 175
T
RS
+ 1 T
RS
+ 5
135
7
Max.
Unit
30
30
A
A
°C
°C
°C
V
CC
- 58 V
CC
- 64 V
CC
- 70 V
25
200
A
°C mV
Symbol
K
1 dK
1
/K
1
(1)
Table 9. Current sense (8 V < V
CC
< 36 V)
Parameter Test conditions Min.
Typ.
Max. Unit
I
OUT
/I
SENSE
Current sense ratio drift
I
OUT
= 350 mA; V
SENSE
= 1 V;
T j
= -40 °C to 150 °C
T j
= 25 °C to 150 °C
I
OUT
= 350 mA; V
SENSE
= 1 V;
T j
= -40 °C to 150 °C
930
1050
1547
1547
2185
2020
-15 15 %
DocID018513 Rev 3 11/32
31
Electrical specifications VND5T100AJ-E
Symbol
Table 9. Current sense (8 V < V
CC
< 36 V) (continued)
Parameter Test conditions Min.
Typ.
Max. Unit dK dK dK
I
2
3
4
K
/K
K
/K
K
2
3
4
/K
2
3
4
SENSE0
V
SENSE
I
I
I
OUT
OUT
OUT
/I
/I
/I
SENSE
Current sense ratio drift
SENSE
Current sense ratio drift
SENSE
Current sense ratio drift
Analog sense leakage current
I
OUT
= 0.8 A; V
SENSE
= 2 V;
T j
= -40 °C to 150 °C
T j
= 25 °C to 150 °C
I
OUT
= 0.8 A; V
SENSE
= 2 V;
T j
= -40 °C to 150 °C
I
OUT
= 1.5 A; V
SENSE
= 2 V;
T j
= -40 °C to 150 °C
T j
= 25 °C to 150 °C
I
OUT
= 1.5 A; V
SENSE
= 2 V;
T j
= -40 °C to 150 °C
I
OUT
= 6 A; V
SENSE
T j
= 4 V;
= -40 °C to 150 °C
T j
= 25 °C to 150 °C
I
OUT
= 6 A; V
SENSE
= 4 V;
T j
= -40 °C to 150 °C
I
OUT
= 0 A; V
SENSE
= 0 V;
V
IN
= 0 V; T j
= -40 °C to 150 °C
I
OUT
= 0 A; V
SENSE
= 0 V;
V
IN
= 5 V; T j
= -40 °C to 150 °C
Max analog sense output voltage
I
OUT
= 6 A; R
SENSE
= 3.9 k Ω
1225
1310
-12
1340
1405
-8
1450
1475
-5
0
0
5
1528
1528
1525
1525
1522
1522
1835
1745
12
1715
1655
8
1600
1560
5
1
2
%
%
%
µA
µA
V
V
I
SENSEH
SENSEH
Analog sense output voltage in fault condition
(2)
V
CC
= 24 V; R
SENSE
= 3.9 k Ω
Analog sense output
V
CC
= 24 V; V
SENSE
= 5 V t
DSENSE2H
Delay response time from rising edge of INPUT pin
V
SENSE
< 4 V;
0.07 A < I
OUT
< 6 A;
I
SENSE
= 90 % of I
SENSE max
Δ t
DSENSE2H t
DSENSE2L
Delay response time between rising edge of output current and rising edge of current sense
Delay response time from falling edge of INPUT pin
V
SENSE
< 4 V;
I
SENSE
= 90 % of I
SENSEMAX,
I
OUT
= 90 % of I
OUTMAX
I
OUTMAX
= 1.5 A (see
V
SENSE
< 4 V,
0.07 A < I
OUT
< 6 A;
I
SENSE
= 10 % of I
SENSE max
7.5
4.9
8.5
9
100
5
1.
Parameter guaranteed by design; it is not tested.
2.
Fault condition includes: power limitation, overtemperature and open-load in OFF-state condition.
9.5
12
200
150
20
V mA
µs
µs
µs
12/32 DocID018513 Rev 3
VND5T100AJ-E Electrical specifications
Symbol Parameter
Table 10. Open-load detection
Test conditions Min.
Typ.
Max.
Unit t
V
OL
DSTKON
Open-load off-state voltage detection threshold
Output short circuit to
V
CC
detection delay at turn off
V
F
IN
= 0 V; 8 V < V
R_STBY
See
F
= 5 V
;
R_STBY
= 5 V
CC
< 36 V; t
DFRSTK_ON
Output short circuit to
V
CC
detection delay at
FRSTBY activation
I t
L(off2) d_vol
See
; Input
1,2
= low
Off-state output current at V
OUT
= 4V
Delay response from output rising edge to
V
SENSE rising edge in open-load
V
IN
= 0 V; V
SENSE
= 0 V;
V
OUT rising from 0 V to 4 V;
F
R_STBY
= 5 V
V
OUT
= 4 V; V
IN
= 0 V;
V
SENSE
R
SENSE
= 90 % of V
= 3.9 k
Ω;
SENSEH
;
F
R_STBY
= 5 V
2
180
-120
4
1800
50
0
20
V
µs
µs
µA
µs
Figure 6. Current sense delay characteristics
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CC
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Figure 10. Delay response time between rising edge of output current and rising edge of current sense
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Electrical specifications
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16/32 DocID018513 Rev 3
VND5T100AJ-E
Standby
Normal operation
Overload
Conditions
Overtemperature / short to ground
Undervoltage
Short to V
BAT
Open-load off-state (with pull-up)
Negative output voltage clamp
Table 11. Truth table
Fault reset standby Input
X
X
X
L
H
L
X
X
X
L
H
X
L
H
X
X
L
H
L
H
H
L
L
H
X
L
L
H
L
L
H
L
Electrical specifications
Output
L
L
H
L
H
L
Cycling
Latched
L
H
H
H
H
H
H
Negative
Sense
0
0
Nominal
0
> Nominal
0
V
SENSEH
V
SENSEH
0
0
V
SENSEH
< Nominal
0
V
SENSEH
0
0
DocID018513 Rev 3 17/32
31
Electrical specifications VND5T100AJ-E
ISO 7637-2:
2004(E)
Test pulse
1
2a
3a
3b
4
5b
(2)
Table 12. Electrical transient requirements (part 1)
Test levels
(1)
III IV
Number of pulses or test times
Burst cycle/pulse repetition time
- 450 V
+ 37 V
- 150 V
+ 150 V
- 12 V
+ 123 V
- 600 V
+ 50 V
- 200 V
+ 200 V
- 16 V
+ 174 V
5000 pulses
5000 pulses
1h
1h
1 pulse
1 pulse
Delays and impedance
0.5 s
0.2 s
5 s
5 s
1 ms, 50 Ω
50 µs, 2 Ω
90 ms 100 ms 0.1 µs, 50 Ω
90 ms 100 ms 0.1 µs, 50 Ω
100 ms, 0.01
Ω
350 ms, 1 Ω
ISO 7637-2:
2004(E)
Test pulse
1
2a
Table 13. Electrical transient requirements (part 2)
III
C
C
Test level results
3a
3b
(1)
3b
(2)
C
E
C
4
5b
(3)
C
C
1.
Without capacitor between V
CC
and GND.
2.
With 10 nF between V
CC
and GND.
3.
External load dump clamp, 58 V maximum, referred to ground.
IV
C
E
C
C
C
C
C
Class
C
E
Table 14. Electrical transient requirements (part 3)
Contents
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the
18/32 DocID018513 Rev 3
VND5T100AJ-E
)L RII>X$@
Figure 13. Off-state output current
Electrical specifications
Figure 14. High level input current
)IH;U!=
9LQ 9
2IIVWDWH
9&& 9
9LQ 9RXW
6 ICL;6 =
7F>&@
Figure 15. Input clamp voltage
*$3*&)7
7F>&@
6 IH;6 =
Figure 16. Input high level voltage
'!0'#&4
,LQ P $
6 IL;6 =
7F>&@
Figure 17. Input low level voltage
*$3*&)7
6 IHYS T;6 =
7F>&@
*$3*&)7
Figure 18. Input hysteresis voltage
7F>&@
*$3*&)7
DocID018513 Rev 3
7F>&@
*$3*&)7
19/32
31
Electrical specifications
Figure 19. On-state resistance vs T case
5RQ>P 2KP @
,RXW $
9FF 9
VND5T100AJ-E
Figure 20. On-state resistance vs V
CC
2ON ;M /HM =
7F &
7F &
7F &
7F &
)LIM H;!=
7F>&@
Figure 21. I
LIMH
vs T case
("1($'5
9FF>9@
Figure 22. Turn-on voltage slope
D6 OU TDT /N;6 US =
*$3*&)7
9FF 9 9FF 9
5O ȍ
7F>&@
*$3*&)7
Figure 23. Turn-off voltage slope
D6 OU TDT /FF ;6 US =
9FF 9
5O ȍ
20/32
7F>&@
*$3*&)7
DocID018513 Rev 3
7F>&@
*$3*&)7
VND5T100AJ-E Application information
9
5
SURW
Figure 24. Application schematic
9
&&
)5B6WE\
0&8
5
SURW
5
SURW
&
H[W
5
6(16(
,1
&6
9
*1'
*1'
'
*1'
287
'
OG
*$3*&)7
3.1
3.1.1
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
GND
only)
This solution can be used with any type of load.
The following is an indication on how to size the R
GND resistor.
1.
R
GND
≤ 600 mV / (I
S(on)max
).
2. R
GND
≥ (−
V
CC
) / (-I
GND
) where -I
GND
is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet.
Power dissipation in R
GND
(when V
CC
< 0: during reverse battery situations) is:
P
D
= (-V
CC
)
2
/ R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND produces a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output values. This shift varies depending on how many devices are ON in the case of several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests Solution 2 is used (see below).
DocID018513 Rev 3 21/32
31
Application information
3.1.2
VND5T100AJ-E
Solution 2: diode (D
GND
) in the ground line
A resistor (R
GND
= 4.7 k
Ω) should be inserted in parallel to D
GND
if the device drives an inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift (
≈
600 mV) in the input threshold and in the status output values, if the microprocessor ground is not common to the device ground. This shift not varies if more than one HSD shares the same diode/resistor network.
3.2 Load dump protection
D ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds to
V
CC
maximum DC rating. The same applies if the device is subject to transients on the V
CC line that are greater than the ones shown in the ISO T/R 7637/2 table.
3.3 MCU I/Os protection
If a ground protection network is used and negative transient are present on the V
CC
line, the control pins are pulled negative. ST suggests that a resistor (R prot
) be inserted in line to prevent the microcontroller I/O pins from latching-up.
The value of these resistors is a compromise between the leakage current of microcontroller and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os.
-V
CCpeak
/I latchup
≤
R prot
≤
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= -600 V and I latchup
≥
20 mA; V
OH
μ
C
≥
4.5 V
30 k
Ω ≤
R prot
≤
180 k
Ω
.
Recommended R prot value is 60 k
Ω.
22/32 DocID018513 Rev 3
VND5T100AJ-E
3.4
Application information
Maximum demagnetization energy (V
CC
= 24 V)
Figure 25. Maximum turn-off current versus inductance
10
A
C
B
1
0.1
1 10
A: T jstart
= 150°C single pulse
B: T jstart
= 100°C repetitive pulse
C: T jstart
= 125°C repetitive pulse
L (mH)
V
IN
, I
L
100
Demagnetization Demagnetization
1000
Demagnetization
1.
Values are generated with R
L
= 0 Ω . In case of repetitive pulses, T jstart
(at the beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves A and B.
t
DocID018513 Rev 3 23/32
31
Package and PCB thermal data
4 Package and PCB thermal data
4.1 PowerSSO-12 thermal data
Figure 26. PowerSSO-12 PC board
VND5T100AJ-E
24/32
*$3*&)7
.
1.
Layout condition of R th
and Z th
measurements (Board finish thickness 1.6 mm +/- 10 %; Board double layer; Board dimension 77 mm x 86 mm; Board Material FR4; Cu thickness 0.070 mm (front and back side); Thermal vias separation 1.2 mm; Thermal via diameter 0.3 mm +/- 0.08 mm; Cu thickness on vias
0.025 mm; Footprint dimension 4.1 mm x 6.5 mm).
Figure 27. R thj-amb
vs PCB copper area in open box free air condition (one channel ON)
RTHjamb
65
60
55
50
45
40
35
30
0 2 4 6
RTHjamb
8 10
GAPGCFT000124
DocID018513 Rev 3
VND5T100AJ-E Package and PCB thermal data
Figure 28. PowerSSO-12 thermal impedance junction ambient single pulse (one channel ON)
=7+&:
&X FP
&X FP
&X I RR WSULQW
7LPHV
*$3*&)7
Figure 29. Thermal fitting model of a double channel HSD in PowerSSO-12
*$3*&)7
1.
The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
Equation 1: pulse calculation formula
Z
TH δ
= where
R
TH
⋅ δ
+ Z
THtp
(
1 –
δ )
δ = t p
⁄ T
DocID018513 Rev 3 25/32
31
Package and PCB thermal data
Area/island (cm
2
)
R1 = R7 (°C/W)
R2 = R8 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 = C7 (W.s/°C)
C2 = C8 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
Table 15. Thermal parameters
Footprint
0.0008
0.005
0.05
0.2
0.27
3
0.8
1.5
3
8
22
26
2
0.1
0.8
6
8
15
20
VND5T100AJ-E
8
0.1
1
9
7
10
15
26/32 DocID018513 Rev 3
VND5T100AJ-E
5
Package and packing information
Package and packing information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
5.1 PowerSSO-12 mechanical data
Figure 30. PowerSSO-12 package dimensions
DocID018513 Rev 3
("1($'5
27/32
31
Package and packing information
Symbol
D
E e
B
C
A
A1
A2
H h
L k
X
Y ddd
Table 16. PowerSSO-12 mechanical data
Millimeters
Typ.
Min.
1.250
0.000
1.100
0.230
0.190
4.800
3.800
0.800
5.800
0.250
0.400
0°
1.900
3.600
VND5T100AJ-E
Max.
1.700
0.100
1.600
0.410
0.250
5.000
4.000
6.200
0.550
1.270
8°
2.500
4.200
0.100
28/32 DocID018513 Rev 3
VND5T100AJ-E Package and packing information
A
Figure 31. PowerSSO-12 tube shipment (no suffix)
B
C
All dimensions are in mm.
Base q.ty
Bulk q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
100
2000
532
1.85
6.75
0.6
GA P GC FT000123
Figure 32. PowerSSO-12 tape and reel shipment (suffix “TR”)
Reel dimensions
Base q.ty
Bulk q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
12.4
60
18.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape hole spacing
Component spacing
Hole diameter
Hole diameter
Hole position
Compartment depth
Hole spacing
W
P0 (± 0.1)
P
D (± 0.05)
D1 (min)
F (± 0.1)
K (max)
P1 (± 0.1)
1.5
5.5
4.5
2
12
4
8
1.5
All dimensions are in mm.
End
Top cover tape
No components
500mm min
Components No components
Empty components pockets saled with cover tape.
500mm min
User direction of feed
Start
DocID018513 Rev 3 29/32
31
Order code VND5T100AJ-E
Package
PowerSSO-12
Table 17. Device summary
Order codes
Tube
VND5T100AJ-E
Tape and reel
VND5T100AJTR-E
30/32 DocID018513 Rev 3
VND5T100AJ-E
Date
08-Mar-2011
25-Sep-2013
22-Mar-2016
Revision
Table 18. Document revision history
Changes
1
2
3
Initial release.
Disclaimer updated.
:
– R thj-case
: updated value
Updated
Section 5.1: PowerSSO-12 mechanical data
Revision history
DocID018513 Rev 3 31/32
31
VND5T100AJ-E
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© 2016 STMicroelectronics – All rights reserved
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