STMicroelectronics VN5770AKP-E Datasheet

VN5770AKP-E

Quad smart power solid state relay for complete H-bridge configurations

Datasheet

-

production data

– Thermal shutdown indication on both the high and low-side switches

62GRXEOHLVODQG

*$3*36

Features

Type R

DS(on)

VN5770AKP-E 280 m

Ω (1)

I

OUT

(typ)

8.5 A

V

CC

36 V

1.

Total resistance of one side in bridge configuration

• ECOPACK

®

: lead free and RoHS compliant

• Automotive Grade: compliance with AEC guidelines

• General features

– Inrush current management by active power limitation on the high-side switches

– Very low standby current

– Very low electromagnetic susceptibility

– Compliance with European directive

2002/95/EC

• Protection

– High-side drivers undervoltage shutdown

– Overvoltage clamp

– Output current limitation

– High and low-side overtemperature shutdown

– Short circuit protection

– ESD protection

• Diagnostic functions

– Proportional load current sense

Applications

• DC motor driving in full or half bridge configuration

• All types of resistive, inductive and capacitive loads

Description

The VN5770AKP-E is a device formed by three monolithic chips housed in a standard SO-28 package: a double high-side and two low-side switches. The double high-side is made using

STMicroelectronics

®

VIPower

®

M0-5 technology, while the low-side switches are fully protected

VIPower M0-3 OMNIFET II. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application.

The dual high-side switches integrate built in non latching thermal shutdown with thermal hysteresis. An output current limiter protects the device in overload condition. In case of long overload duration, the device limits the dissipated power to a safe level up to thermal shutdown intervention. An analog current sense pin delivers a current proportional to the load current

(according to a known ratio) and indicates overtemperature shutdown of the relevant high-side switch through a voltage flag.

The low-side switches have built in non latching thermal shutdown with thermal hysteresis, linear current limitation and overvoltage clamping.

Fault feedback for overtemperature shutdown of the low-side switch is indicated by the relevant input pin current consumption going up to the fault sink current flag.

July 2015

This is information on a product in full production.

DocID17772 Rev 7

1/37

www.st.com

8

9

1

2

Contents

Contents

3

4

5

6

7

VN5770AKP-E

Block diagram and pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2.1

Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

3.1

Electrical characteristics for dual high-side switch . . . . . . . . . . . . . . . . . . 10

Electrical characteristics curves for dual high-side switch . . . . . . . . 14

4.1

Electrical characteristics for low-side switches . . . . . . . . . . . . . . . . . . . . . 16

4.2

Electrical characteristics curves for low-side switches . . . . . . . . . . . . . . . 18

Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

5.1

Maximum demagnetization energy (V

CC

= 13.5 V) . . . . . . . . . . . . . . . . . 24

Package and thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

6.1

SO-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

7.1

SO-28 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

7.2

SO-28 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

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VN5770AKP-E

List of tables

List of tables

Table 1.

Table 2.

Table 3.

Table 4.

Table 5.

Table 6.

Table 7.

Table 8.

Pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Dual high-side switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Low-side switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Switching (VCC = 13 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Protection and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Table 9.

Current sense (8V<VCC<16V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Table 10.

Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Table 11.

Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 12.

On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 13.

Dynamic (T

j

= 25°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 14.

Switching (T

j

= 25 °C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 15.

Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table 16.

Protection and diagnostics (-40 °C < Tj < 150 °C, unless otherwise specified) . . . . . . . . . 17

Table 17.

Thermal calculations in clockwise and anti-clockwise operation in steady-state mode . . . 26

Table 18.

Thermal resistances definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Table 19.

Single pulse thermal impedance definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Table 20.

Thermal calculations in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Table 21.

Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Table 22.

SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Table 23.

Reel dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Table 24.

SO-28 carrier tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Table 25.

Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Table 26.

Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

DocID17772 Rev 7

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3

List of figures

List of figures

VN5770AKP-E

Figure 1.

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2.

Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Figure 3.

Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Figure 4.

Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 5.

Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 6.

Off-state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 7.

High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 8.

Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 9.

Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 10.

Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 11.

Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 12.

On-state resistance vs T

case

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 13.

On-state resistance vs V

CC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 14.

Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 15.

Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 16.

I

LIMH

vs T case

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 17.

Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 18.

Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 19.

Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 20.

Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 21.

Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 22.

Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 23.

Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 24.

Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 25.

Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 26.

Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 27.

Static drain-source on resistance vs I

D

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 28.

Static drain-source on resistance vs input voltage (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 29.

Static drain-source on resistance vs input voltage (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 30.

Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 31.

Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 32.

Current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 33.

Typical application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 34.

Recommended motor operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 35.

Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 36.

Maximum turn off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Figure 37.

SO-28 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 38.

Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 39.

Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . 26

Figure 40.

SO-28 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . 27

Figure 41.

SO-28 LSD thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . 28

Figure 42.

Thermal fitting model of an H-bridge in SO-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Figure 43.

SO-28 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Figure 44.

SO-28 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Figure 45.

Reel for SO-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Figure 46.

SO-28 carrier tape . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Figure 47.

SO-28 schematic drawing of leader and trailer tape. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

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VN5770AKP-E

1

Block diagram and pin descriptions

Block diagram and pin descriptions

Figure 1. Block diagram

9FF

*1'

,1387

,1387

9FF

FODPS

/RJLF

8QGHUYROWDJH

&ODPS

'ULYHU

&XUUHQWOLPLWHU

9GVOLPLWHU

2YHUWHPS

2YHUWHPS

3RZHUOLPLWDWLRQ

&6(16(

,1387

.

.

,'6

,'6

*DWH

&RQWURO

&ODPS

'ULYHU

&XUUHQWOLPLWHU

9'6OLPLWHU

3RZHUOLPLWDWLRQ

2YHUYROWDJH

&ODPS

6285&(

6285&(

'5$,1

6285&(

2YHU

7HPSHUDWXUH

/LQHDU

&XUUHQW

/LPLWHU

2YHUYROWDJH

&ODPS

'5$,1

,1387

*DWH

&RQWURO

6285&(

2YHU

7HPSHUDWXUH

/LQHDU

&XUUHQW

/LPLWHU

*$3*&)7

DocID17772 Rev 7

5/37

36

Block diagram and pin descriptions VN5770AKP-E

No

1, 3, 25, 28

2

4, 11

5, 10, 19, 24

6

7

8

9

12, 14, 15, 18

13

16, 17

20, 21

22, 23

26, 27

Name

Table 1. Pin descriptions

Function

DRAIN 3

INPUT 3

N.C.

V

CC

GND

INPUT 1

INPUT 2

CURRENT

SENSE

DRAIN 4

Drain of switch 3 (low-side switch)

Input of switch 3 (low-side switch)

Not connected

Drain of switches 1 and 2 (high-side switches) and power supply voltage

Ground of switches 1 and 2 (high-side switches)

Input of switch 1 (high-side switches)

Input of switch 2 (high-side switch)

Analog current sense pin, it delivers a current proportional to the load current

Drain of switch 4 (low-side switch)

INPUT 4 Input of switch 4 (low-side switch)

SOURCE 4 Source of switch 4 (low-side switch)

SOURCE 2 Source of switch 2 (high-side switch)

SOURCE 1 Source of switch 1 (high-side switch)

SOURCE 3 Source of switch 3 (low-side switch)

Figure 2. Configuration diagram (top view)

'5$,1

,1387

'5$,1

1&

9

&&

*1'

,1387

,1387

&6(16(

9

&&

1&

'5$,1

,1387

'5$,1

'5$,1

6285&(

6285&(

'5$,1

9

&&

6285&(

6285&(

6285&(

6285&(

9

&&

'5$,1

6285&(

6285&(

'5$,1

*$3*36

6/37

DocID17772 Rev 7

VN5770AKP-E Block diagram and pin descriptions

Symbol

Table 2. Thermal data

Parameter

R thj-case

R thj-case

R thj-amb

Thermal resistance junction-lead (high-side switch)

Thermal resistance junction-lead (low-side switch)

Thermal resistance junction-ambient

Max value Unit

10

7

°C/W

°C/W

See

Figure 39

°C/W

DocID17772 Rev 7

7/37

36

Absolute maximum ratings VN5770AKP-E

Stressing the device above the rating listed in

Table 3

and Table 4 may cause permanent

damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is

not implied. Exposure to the conditions in Section 2.1: Absolute maximum ratings

for extended periods may affect device reliability.

Symbol

V

CC

-V

CC

-I

GND

I

OUT

-I

OUT

I

IN

I

CSD

Table 3. Dual high-side switch

Parameter

DC supply voltage

Reverse DC supply voltage

DC reverse ground pin current

DC output current

Reverse DC output current

DC input current

DC current sense disable input current

V

CSENSE

Current sense maximum voltage

E

MAX

V

ESD

V

ESD

T j

T stg

Maximum switching energy (single pulse)

(L = 3.7 mH; R

L

= 0

Ω

; V bat

= 13.5 V; T jstart

= 150 °C;

I

OUT

= I limL

(Typ.))

Electrostatic discharge (Human Body Model: R = 1.5 K

Ω ;

C = 100 pF)

– INPUT

– CURRENT SENSE

– OUTPUT

– V

CC

Charge device model (CDM-AEC-Q100-011)

Junction operating temperature

Storage temperature

Value Unit

41

0.3

V

V

200 mA

Internally limited A

-12 A

-1 to 10

-1 to 10

V

CC

-41

+V

CC mA mA

V

V

32 mJ

4000

2000

5000

5000

750

-40 to 150

-55 to 150

V

°C

°C

V

V

V

V

8/37

DocID17772 Rev 7

VN5770AKP-E Absolute maximum ratings

Symbol

Table 4. Low-side switch

Parameter

V

DSn

V

INn

I

INn

R

IN MINn

I

Dn

I

Rn

V

ESD1

V

ESD2

P

T

T

T tot c j stg

Drain-source voltage (V

INn

= 0 V)

Input voltage

Input current

Minimum input series impedance

Drain current

Reverse DC output current

Electrostatic discharge (R = 1.5 K

Ω

, C = 100 pF)

Electrostatic discharge on output pins only

(R = 330

Ω

, C = 150 pF)

Total dissipation at T c

= 25 °C

Operating junction temperature

Case operating temperature

Storage temperature

Value

Internally clamped

Internally clamped

+/-20

220

Internally limited

-12

4000

16500

4

Internally limited

Internally limited

-55 to 150

Unit

V

V mA

Ω

A

A

V

V

W

°C

°C

°C

DocID17772 Rev 7

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36

Electrical characteristics VN5770AKP-E

3.1

10/37

Electrical characteristics for dual high-side switch

Values specified in this section are for 8 V < V

CC

< 36 V; -40 °C < T j

< 150 °C, unless otherwise specified (for each channel).

Symbol Parameter

V

CC

Operating supply voltage

V

USD

Undervoltage shutdown

V

USDhyst

Undervoltage shutdown hysteresis

Table 5. Power section

Test conditions

R

ON

V clamp

Clamp Voltage

I

S

I

L(off)

On-state resistance

Supply current

Off-state output current

(2)

I

OUT

= 3 A; T j

= 25 °C

I

OUT

= 3 A; T j

= 150 °C

I

OUT

= 3 A; V

CC

= 5 V; T j

= 25 °C

I

S

= 20 mA

Off-state; V

CC

= 13 V; T j

= 25 °C;

V

IN

= V

OUT

= V

SENSE

= 0 V

On-state; V

CC

= 13 V; V

IN

= 5 V;

I

OUT

= 0 A

V

IN

= V

OUT

= 0 V; V

CC

= 13 V;

T j

= 25 °C

V

IN

= V

OUT

= 0 V; V

CC

= 13 V;

T j

= 125 °C

V

F

Output - V

CC

diode voltage

(2)

1.

PowerMOS leakage included

2.

For each channel

-I

OUT

= 3 A; T j

= 150 °C

Min.

Typ. Max. Unit

4.5

41

0

0

13 36 V

3.5

4.5

V

0.5

V

160 m Ω

320 m Ω

210 m

Ω

46 52 V

2

(1)

5

(1)

µA

3 6

3

5 mA

µA

µA

0.7

V

Symbol Parameter

Table 6. Switching (V

CC

= 13 V)

Test conditions Min.

Typ.

Max. Unit t t d(on) d(off)

(dV

OUT

/dt) on

(dV

OUT

/dt) off

W

ON

Turn-on delay time R

L

= 4.3

Ω

(see

Figure 3

) —

Turn-off delay time R

L

= 4.3 Ω (see

Figure 3

) —

15

10

—

—

µs

µs

Turn-on voltage slope

R

L

= 4.3

Ω

—

See

V / µs

Turn-off voltage slope R

L

= 4.3

Ω

—

See

V

/

µs

Switching energy losses during t won

R

L

= 4.3 Ω (see

Figure 3

) — 0.16

— mJ

W

OFF

Switching energy losses during t woff

R

L

= 4.3 Ω (see

Figure 3

) — 0.08

— mJ

DocID17772 Rev 7

VN5770AKP-E Electrical characteristics

Symbol

V

IL

I

IL

V

IH

I

IH

V

I(hyst)

Parameter

Input low level voltage

Low level input current

Input high level voltage

High level input current

Input hysteresis voltage

Table 7. Logic input

Test conditions

V

IN

= 0.9 V

V

IN

= 2.1 V

V

ICL

Input clamp voltage

I

IN

= 1 mA

I

IN

= -1 mA

Min.

Typ.

Max.

Unit

0.9

1

2.1

0.25

5.5

-0.7

10

7

V

µA

V

µA

V

V

V

Parameter

Table 8. Protection and diagnostics

(1)

Test conditions Min.

Symbol Typ.

Max.

Unit

I limH

DC Short circuit current

V

CC

= 13 V

5 V < V

CC

< 36 V

6 8.5

12

12

A

A

I limL

Short circuit current during thermal cycling

Shutdown temperature T

TSD

T

T

R

RS

Reset temperature

Thermal reset of

STATUS

T

HYST

Thermal hysteresis

(T

TSD

-T

R

)

V

DEMAG

Turn-off output voltage clamp

V

CC

= 13 V; T

R

< T j

< T

TSD

150

T

RS

135

3.5

175

+ 1 T

RS

7

+ 5

200

A

°C

°C

°C

°C

V

ON

Output voltage drop limitation

I

OUT

= 1 A; V

IN

= 0;

L = 20 mH

I

T

OUT j

= 0.03 A;

= -40 °C to 150 °C

(see

Figure 4

)

V

CC

-41 V

CC

-46 V

25

CC

-52 V

1.

To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles mV

DocID17772 Rev 7

11/37

36

Electrical characteristics VN5770AKP-E

Symbol

Table 9. Current sense (8V<V

CC

<16V)

Parameter Test conditions Min.

Typ.

Max. Unit

I

V

V

K

K

K

K

0

1

2

3

SENSE0

SENSE

SENSEH

I

I

I

I

OUT

OUT

OUT

OUT

/I

/I

/I

/I

SENSE

SENSE

SENSE

SENSE

Analog sense current

I

OUT

= 0.08 A;

V

SENSE

= 0.5 V;

T j

= -40°C to 50°C

I

OUT

= 0.35 A; V

SENSE

= 0.5V;

T j

= -40°C to 150°C

T j

= 25°C to 150°C

I

T

OUT j

= 3A; V

SENSE

= 4V;

= -40°C to 150°C

I

T

OUT j

= 4A; V

SENSE

= 4V;

= -40°C to 150°C

I

OUT

= 0A; V

SENSE

= 0V;

V

IN

= 0V; T j

= -40°C to 150°C

I

OUT

= 0A; V

SENSE

= 0V;

V

IN

= 5V; T j

= -40°C to 150°C

850

840

980

1450 2120

1360

1360

2000

1740

1200 1270 1350

1200 1270 1350

0

0

1

2

Max analog sense output voltage

I

OUT

= 5A; R

SENSE

= 3.9 K

Ω

Analog sense output voltage in overtemperature condition

V

CC

= 13V; R

SENSE

= 3.9 K

Ω

5

9 t

DSENSE2H t

I

SENSEH

DSENSE2L

Analog sense output current in overtemperature condition

V

CC

= 13V

Delay response time from rising edge of INPUT pin

Delay response time from falling edge of INPUT pin

V

SENSE

<4 V; 0.35 A<I out

<5 A;

I

SENSE

= 90% of I

SENSE max

(see

Figure 5

)

V

SENSE

<4 V; 0.35 A<I out

<5 A;

I

SENSE

= 10% of I

SENSE max

(see

Figure 5

)

8

70

100

300

250

µA

µA

V

V mA

µs

µs

Figure 3. Switching time waveforms

9

287Q

G9

287

GW

RQ

G9

287

GW

RII

T

9

,1Q W

GRQ W

GRII

W

("1($'5

12/37

DocID17772 Rev 7

VN5770AKP-E Electrical characteristics

Figure 4. Output voltage drop limitation

6CC 6OU T

7M

R

&

7M

R

&

7M

R

&

Conditions

Normal operation

Overtemperature

Undervoltage

Short circuit to GND

Short circuit to V

CC

Negative output voltage clamp

6ON

L

9RQ5RQ7

)OU T

("1($'5

Table 10. Truth table

Input Output

L

H

L

H

L

H

L

H

L

H

L

L

L

L

L

L

L

H

H

H

L

Figure 5. Current sense delay characteristics

,1387

Sense

0

Nominal

0

V

SENSEH

0

0

0

0

0

< Nominal

0

/2$'&855(17

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DocID17772 Rev 7

13/37

36

Electrical characteristics curves for dual high-side switch

4

VN5770AKP-E

Electrical characteristics curves for dual high-side switch

Figure 6. Off-state output current

,ORIIX$

Figure 7. High level input current

,LKX$

6IN6

/FF 3TATE

6CC 6

6IN6OUT 6

7Fƒ&

("1($'5

9LFO9

Figure 8. Input clamp voltage

LI NM!

9LO9

7Fƒ&

("1($'5

Figure 9. Input low level

7Fƒ&

("1($'5

9LK9

Figure 10. Input high level

7Fƒ&

("1($'5

Figure 11. Input hysteresis voltage

9LK\VW9

14/37

7Fƒ&

("1($'5

DocID17772 Rev 7

7Fƒ&

("1($'5

VN5770AKP-E Electrical characteristics curves for dual high-side switch

Figure 12. On-state resistance vs T case

5RQP2KP

Figure 13. On-state resistance vs V

5RQP2KP

CC

)OUT !

6CC 6

)OUT !

7F ƒ&

7F ƒ&

7F ƒ&

7F ƒ&

7Fƒ&

("1($'5

Figure 14. Undervoltage shutdown

9XVG9

9FF9 ("1($'5

Figure 15. Turn-on voltage slope

G9RXWGWRQ9PV

6CC 6

2)/HM

7Fƒ&

("1($'5

,OLPK$

Figure 16. I

LIMH

vs T case

6CC 6

7Fƒ& ("1($'5

Figure 17. Turn-off voltage slope

G9RXWGWRII9PV

6CC 6

2)/HM

7Fƒ&

("1($'5

DocID17772 Rev 7

7Fƒ& ("1($'5

15/37

36

Electrical characteristics curves for dual high-side switch

4.1

VN5770AKP-E

Electrical characteristics for low-side switches

Values specified in this section are for -40 °C < T j

< 150 °C, unless otherwise specified

Symbol Parameter

Table 11. Off

Test conditions

V

CLAMP

V

V

V

I

I

CLTH

INTH

ISS

INCL

DSS

Drain-source clamp voltage

V

IN

= 0 V; I

D

= 1.5 A

Drain-source clamp threshold voltage

V

IN

= 0 V; I

D

= 2 mA

Input threshold voltage V

DS

= V

IN

; I

D

= 1 mA

Supply current from input pin

V

DS

= 0 V; V

IN

= 5 V

Input-source clamp voltage

Zero input voltage drain current

(V

IN

= 0V)

I

IN

= 1 mA

I

IN

= -1 mA

V

DS

= 13 V; V

IN

= 0 V; T j

= 25 °C

V

DS

= 25 V; V

IN

= 0 V

Min Typ Max Unit

40

36

0.5

6

-1.0

45

100 150

6.8

55

2.5

8

-0.3

30

75

V

V

V

µA

V

V

µA

µA

Table 12. On

Test conditions Symbol

R

DS(on)

Parameter

Static drain-source on resistance

V

IN

= 5 V; I

D

= 3 A; T j

= 25 °C

V

IN

= 5 V; I

D

= 3 A

Min Typ Max Unit

—

—

—

—

120

240 m Ω m

Ω

Symbol g fs

C

OSS

Table 13. Dynamic (T j

= 25°C, unless otherwise specified)

Parameter Test conditions Min Typ Max Unit

Forward transconductance

Output capacitance

V

DD

= 13 V; I

D

= 1.5 A —

V

DS

= 13 V; f = 1 MHz; V

IN

= 0 V —

2.5

150

—

—

S pF

Symbol t d(on) t r t d(off) t f t d(on) t r t d(off) t f

Table 14. Switching (T j

= 25 °C, unless otherwise specified)

Parameter

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

V

DD

= 15 V; I

D

R gen

= R

= 3 A; V gen

IN MINn

= 220

Ω

= 5 V;

V

DD

= 15 V; I

D

V gen

= 5 V; R

= 3 A gen

= 2.2 K Ω

Min Typ Max Unit

—

—

—

—

—

—

—

—

200 400

1.2

2.5

ns

µs

600 1350 ns

400 1000 ns

0.80

2.5

3.7

7.5

µs

µs

2.6

2.3

7.5

7.0

µs

µs

16/37

DocID17772 Rev 7

VN5770AKP-E Electrical characteristics curves for dual high-side switch

Table 14. Switching (T j

= 25 °C, unless otherwise specified) (continued)

Symbol Parameter Test conditions Min Typ Max Unit

(dI/dt) on

Q i

Turn-on current slope

Total input charge

V

DD

= 15 V; I

D

R gen

= R

= 3 A; V gen

IN MINn

= 220 Ω

= 5 V;

V

DD

= 12 V; I

D

= 3 A; V

IN

= 5 V;

I gen

= 2.13 mA

—

—

3.0

9.0

A/µs nC

Table 15. Source drain diode

Symbol Parameter Test conditions

V

SD

(1) t rr

Forward on voltage

Reverse recovery time

I

SD

= 1.5 A; V

IN

= 0 V

Q rr

Reverse recovery charge

I

SD

= 1.5 A; dI/dt = 12 A/ms;

V

DD

= 30 V; L = 200 μ H

I

RRM

Reverse recovery current

1.

Pulsed: pulse duration = 300

μ s, duty cycle 1.5%

Min Typ Max Unit

—

—

0.8

400

—

—

V ns

— 200 — nC

— 1.0

— A

Table 16. Protection and diagnostics (-40 °C < T j

< 150 °C, unless otherwise specified)

Symbol Parameter Test conditions Min Typ Max Unit

6 8.5

12 A t

I lim dlim

Drain current limit V

IN

= 5 V; V

DS

= 13 V

Step response current limit

V

IN

= 5 V; V

DS

= 13 V

T jsh

Overtemperature shutdown

T jrs reset

I gf

Fault sink current

E as

Single pulse avalanche energy

V

IN

= 5 V; V

DS

= 13 V; T j

= T jsh

Starting T j

= 25 °C; V

DD

= 24 V;

V

IN

= 5 V; R gen

= R

IN MINn

= 220

Ω

;

L = 24 mH

10 µs

150 175 200 °C

135

10

100

15

°C

20 mA mJ

DocID17772 Rev 7

17/37

36

Electrical characteristics curves for dual high-side switch VN5770AKP-E

4.2 Electrical characteristics curves for low-side switches

Figure 18. Static drain source on resistance

5GVRQPRKPV

4JŽ#

6IN6

Figure 19. Derating curve

4JŽ#

4JŽ#

,G$ ("1($'5

*IV6

Figure 20. Transconductance

6DS 6

4JŽ#

4JŽ#

4JŽ#

,G$

("1($'5

Figure 22. Input voltage vs input charge

9LQ9

6D S6

)D !

("1($'5

Figure 21. Transfer characteristics

,GRQ$

6DS 6

4JŽ#

4J Ž#

4J Ž#

9LQ9 ("1($'5

Figure 23. Capacitance variations

&S)

F -(Z

6IN6

18/37

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DocID17772 Rev 7

9GV9

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VN5770AKP-E Electrical characteristics curves for dual high-side switch

Figure 24. Output characteristics

,G$

6IN 6

6IN6

6IN 6

Figure 25. Step response current limit

7GOLPXVHF

6IN6

2GOH M

9GV9 ("1($'5

Figure 26. Source-drain diode forward characteristics

9VGP9

6IN 6

9GG9

("1($'5

Figure 27. Static drain-source on resistance vs

I

D

5GVRQPRKPV

6IN6

4JŽ#

4JŽ#

4JŽ#

,G$

,G$ ("1($'5

("1($'5

Figure 28. Static drain-source on resistance vs input voltage (part 1)

5GVRQPRKPV

Figure 29. Static drain-source on resistance vs input voltage (part 2)

5GVRQPRKPV

4JŽ#

)D!

4JŽ#

)D!

)D!

4J Ž#

4JŽ#

)D!

)D!

)D!

)D!

4JŽ#

4JŽ#

9LQ9 ("1($'5

9LQ9

("1($'5

DocID17772 Rev 7

19/37

36

Electrical characteristics curves for dual high-side switch

Figure 30. Normalized input threshold voltage vs temperature

9LQWK9

VN5770AKP-E

Figure 31. Normalized on resistance vs

5RQP2KP temperature

)OUT !

6CC 6

6DS6IN

)DM!

7Fƒ&

("1($'5 7Fƒ&

Figure 32. Current limit vs junction temperature

,OLP$

6CC 6

6IN6

("1($'5

7Fƒ&

("1($'5

20/37

DocID17772 Rev 7

VN5770AKP-E Application information

Figure 33. Typical application schematic

,QSXW

,QSXW

&XUUHQW6HQVH

,QSXW

,QSXW

Note:

("1($'5

Mostly motor bridge drivers use a reverse battery protection diode (D) inside supply rail.

This diode prevents a reverse current flow back to Vbatt in case the bridge gets disabled via the logic inputs while motor inductance still carries energy. In order to prevent a hazardous overvoltage at circuit supply terminal (Vcc), a blocking capacitor (C) is needed to limit the voltage overshoot. As basic orientation, 50 µF per 1 A load current in recommended. In alternative, also a Zener protection (Z) is suitable. Even if a reverse polarity diode is not present, it is recommended to use a capacitor or zener at Vcc because a similar problem appears in case supply terminal of the module has intermittent electrical contact to the battery or gets disconnected while motor is operating.

DocID17772 Rev 7

21/37

36

Application information

Figure 34. Recommended motor operation

&O

RF

NZ

LV

H

RS

HU

DW

LR

Q

3

DV

VL

YH

P

RW

RU

V

WR

S

&

RX

QW

RS

HU

HU

F

DW

OR

LR

FN

Q

Z

LV

H

VV

LY

H

P

RW

RU

V

WR

S

&

OR

FN

Z

LV

H

RS

$F

HU

DW

WLY

LR

H

Q

P

RW

RU

V

WR

S

VN5770AKP-E

W W

W W

("1($'5

22/37

DocID17772 Rev 7

VN5770AKP-E Application information

Figure 35. Waveforms

1250$/23(5$7,21

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6(16(&855(17

9

&&

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&6B',6

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M

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76'

7

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,

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DocID17772 Rev 7

23/37

36

Application information

5.1 Maximum demagnetization energy (V

CC

= 13.5 V)

VN5770AKP-E

Figure 36. Maximum turn off current versus load inductance

,

/0$;

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$ 6LQJOH3XOVHDW7

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24/37

DocID17772 Rev 7

VN5770AKP-E

6 Package and thermal data

Figure 37. SO-28 PC board

Package and thermal data

Note: Layout condition of R th

and Z th

measurements (PCB FR4 area= 58 mm x 58 mm, PCB thickness = 2 mm, Cu thickness = 35 mm, Copper areas: from minimum pad layout to

16 cm

2

).

Figure 38. Chipset configuration

5

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&+,3

FKDQQHO

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+,*+6,'(

&+,3

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25/37

36

Package and thermal data VN5770AKP-E

Figure 39. Auto and mutual Rthj-amb vs PCB copper area in open box free air condition

5WKÛ&:

5WK$

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5WK$% 5WK$&

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Note:

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See

Figure 38

. For more detailed information see Table 17

and

Table 18 .

Table 17. Thermal calculations in clockwise and anti-clockwise operation in steadystate mode

HS

1

HS

2

LS

3

LS

4

T jHS12

T jLS3

T jLS4

ON OFF OFF ON

OFF ON ON OFF

P dHS1 x R thHS

+ P dLS4 x

R thHSLS

+ T amb

P dHS1 x R thHSLS

+

P dLS4 x R thLSLS

+ T amb

P dHS1 x R thHSLS

+

P dLS4 x R thLS

+ T amb

P dHS2 x R thHS

+ P dLS3 x

R thHSLS

+ T amb

P dHS2 x R thHSLS

+

P dLS3 x R thLS

+ T amb

P dHS2

P dLS3 x R x R thHSLS

+ thLSLS

+ T amb

Parameter

Table 18. Thermal resistances definitions

Definition

R thHS

= R thHS1

= R thHS2

R thLS

= R thLS3

= R thLS4

R thHSLS

= R thHS1LS4

= R thHS2LS3

R thLSLS

= R thLS3LS4

High-side chip thermal resistance junction to ambient (HS

1 or HS

2

in ON-state)

Low-side chip thermal resistance junction to ambient

Mutual thermal resistance junction to ambient between highside and low-side chips

Mutual thermal resistance junction to ambient between lowside chips

Values dependent on PCB heatsink area.

26/37

DocID17772 Rev 7

VN5770AKP-E Package and thermal data

x

Table 19. Single pulse thermal impedance definitions

Parameter Definition

Z thHS

Z thLS

= Z thLS3

= Z thLS4

Z thHSLS

= Z thHS12LS3

= Z thHS12LS4

Z thLSLS

= Z thLS3LS4

High-side chip thermal impedance junction to ambient

Low-side chip thermal impedance junction to ambient

Mutual thermal impedance junction to ambient between high-side and low-side chips

Mutual thermal impedance junction to ambient between lowside chips

Note:

Note:

Values dependent on PCB heatsink area.

Parameter

T jHS12

T jLS3

T jLS4

Table 20. Thermal calculations in transient mode

Definition

Z thHS

x P dHS12

+ Z thHSLS

x (P dLS3

+ P dLS4

) + T amb

Z thHSLS

x P dHS12

+ Z thLS

x P dLS3

+ Z thLSLS

x P dLS4

+ T amb

Z thHSLS

x P dHS12

+ Z thLSLS

x P dLS3

+ Z thLS

x P dLS4

+ T amb

Calculation is valid in any dynamic operating condition. Pd values set by user.

Figure 40. SO-28 HSD thermal impedance junction ambient single pulse

=7+ Û&:

+6'

)RRWSULQW

FP

FP

FP

)RRWSULQW

FP

FP

FP

+V/V'

WLPHVHF

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DocID17772 Rev 7

27/37

36

Package and thermal data VN5770AKP-E

Figure 41. SO-28 LSD thermal impedance junction ambient single pulse

=7+ Û&:

)RRWSULQW

FP

FP

FP

/6'

)RRWSULQW

FP

FP

FP

/V/V'

WLPHVHF

Equation 1: pulse calculation formula

Z

TH

δ

= R

TH

⋅ δ

+ Z where

δ

= t p

⁄

T

TH tp

(

1 –

δ )

Figure 42. Thermal fitting model of an H-bridge in SO-28

*$3*36

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VN5770AKP-E

Area/island (cm

2

)

R1 = R7 (°C/W)

R2 = R8 (°C/W)

R3 = R11 = R17 (°C/W)

R4 (°C/W)

R5 = R13 = R19 (°C/W)

R6 = R14 = R20 (°C/W)

R9 = R15 (°C/W)

R10 = R16 (°C/W)

R12 (°C/W)

R18 (°C/W)

R21 = R22 = R23 (°C/W)

R24 (°C/W)

C1 = C7 (W·s/°C)

C2 = C8 (W·s/°C)

C3 = C11 = C17 (W·s/°C)

C5 = C13 = C19 (W·s/°C)

C6 = C14 = C20 (W·s/°C)

C9 = C15 (W·s/°C)

C10 = C16 (W·s/°C)

Table 21. Thermal parameters

Footprint 1

62.28

0.24

1.2

15.2

15.5

150

1

1.8

3.5

13.5

10.5

150

0.0008

0.001

0.008

0.2

1.6

0.00015

0.0005

52.28

52.28

1.61

Package and thermal data

2

44.28

44.28

1.7

6

32.28

32.28

3.25

Note: A blank space means that the value is the same as the previous one.

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36

Package information VN5770AKP-E

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK

® specifications, grade definitions and product status are available at: www.st.com

.

ECOPACK

®

is an ST trademark.

'

Figure 43. SO-28 package outline

K[ƒ

GGG &

%

6($7,1*

3/$1(

& PP

*$*(3/$1(

/

N

*$3*36

30/37

3,1

,'(17,),&$7,21

Ref.

A

A1

B

C

D

(1)

H

Table 22. SO-28 mechanical data

Dimensions

Millimeters

Typ.

Min.

2.35

0.10

0.33

0.23

17.70

DocID17772 Rev 7

Max.

2.65

0.30

0.51

0.32

18.10

VN5770AKP-E

Table 22. SO-28 mechanical data

Dimensions

Ref.

Millimeters

Min.

Typ.

E e

H

7.40

1.27

h

L k

10.0

0.25

0.40

0° ddd

1.

Dimension “D” does not include mold flash, protrusions or gate burrs.

Mold flash, protrusions or gate burrs shall not exceed 0.15mm per side.

Package information

Max.

7.60

10.65

0.75

1.27

8°

0.10

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36

Package information VN5770AKP-E

&

Figure 44. SO-28 tube shipment (no suffix)

%

%DVH4W\

%XON4W\

7XEHOHQJWK“

$

%

&“

$OOGLPHQVLRQVDUHLQPP

$

*$3*36

Figure 45. Reel for SO-28

"DDFTT)PMFBU

4MPU-PDBUJPO

NNNJO

32/37

" %

$

*GQSFTFOU

UBQFTMPUJODPSF

GPSUBQFTUBSU

NNNJOXJEUIY

NNNJOEFQUI #

Table 23. Reel dimensions

Description

Base quantity

Bulk quantity

A (max)

B (min)

C (+0.5, -0.2)

D (min)

N

W1 (+2/ -0)

W2 (max)

1.

All dimensions are in mm.

DocID17772 Rev 7

8

8

/

5"1($'5

Value

(1)

1000

1000

330

1.5

13

20.2

100

24.4

30.4

VN5770AKP-E

Figure 46. SO-28 carrier tape

Package information

Table 24. SO-28 carrier tape dimensions

Description Value

(1)

A

0

B

0

10.90 ± 0.1

18.55 ± 0.1

K

0

K

1

3.0 ± 0.1

2.6 ± 0.1

F

P

1

D1

W

11.5 ± 0.1

12.0 ± 0.1

1.5 ± 0.1

24.0 ± 0.3

1.

All dimensions are in mm.

("1($'5

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36

Package information VN5770AKP-E

Figure 47. SO-28 schematic drawing of leader and trailer tape

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DocID17772 Rev 7

VN5770AKP-E Order codes

Package

SO-28

Table 25. Device summary

Order codes

Tube

VN5770AKP-E

Tape and reel

VN5770AKPTR-E

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36

Revision history VN5770AKP-E

Date

11-Nov-2010

04-Jan-2012

20-Feb-2012

02-Oct-2012

23-Sep-2013

25-Feb-2015

21-Jul-2015

Revision

Table 26. Document revision history

Changes

1

2

3

4

5

6

7

Initial release.

Table 9: Current sense (8V<VCC<16V) - K

0 values modified

Update Figure 2: Configuration diagram (top view) and

Figure 33:

Typical application schematic

Table 9: Current sense (8V<VCC<16V) :

– K

0

: updated values

Updated Disclaimer

Fixed order code value on the cover page and Table 25: Device summary

Updated:

–

Section 7.1: SO-28 package information

;

– Tape dimensions in

Figure 8: Order codes on page 35 .

Updated Section 7.2: SO-28 packing information

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