®
STTH302S
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max) trr (max)
3A
200 V
175 °C
0.75 V
35 ns
■
■
■
■
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
DESCRIPTION
The STTH302S, which is using ST’s new 200V planar technology, is specially suited for switching mode base drive & transistor circuits.
The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.
SMC
ABSOLUTE RATINGS (limiting values)
Symbol Parameter
V
RRM
Repetitive peak reverse voltage
I
F(AV)
Average forward current
I
FSM
Surge non repetitive forward current
T stg
Tj
Storage temperature range
Maximum operating junction temperature
Tl = 107°C
δ
=0.5
tp = 10 ms Sinusoidal
Value
200
3
100
- 65 + 175
175
THERMAL PARAMETERS
Symbol
R th (j-l)
Junction to lead
Parameter Maximum
20
Unit
°
C/W
Unit
V
A
A
°C
°C
April 2002 - Ed: 1A
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STTH302S
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameter
Reverse leakage current
Tests conditions
Tj = 25°C
Tj = 125°C
V
R
= V
RRM
V
F
** Forward voltage drop Tj = 25°C I
F
= 3 A
Tj = 125°C I
F
= 3 A
Pulse test: * tp = 5ms,
δ
< 2%
** tp = 380µs,
δ
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.60 x I
F(AV)
+ 0.05 I
F
2
(RMS)
Min.
Typ.
Max.
Unit
3
µ
A
4 75
0.95
0.66
0.75
V
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol trr
V tfr
FP
Parameter
Reverse recovery time
Forward recovery time
Forward recovery voltage
Tests conditions
Tj = 25°C I
F
=1 A Irr = -50 A/µs
V
R
= 30V
Tj = 25°C I
F
= 3 A dI
F
/dt = 50 A/
µ s
V
FR
= 1.1 x V
F max
Tj = 25°C I
F
= 3 A dI
F
/dt = 50 A/
µ s
Min.
Typ.
Max.
Unit
35 ns
70
1.6
ns
V
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STTH302S
Fig. 1: Average forward power dissipation versus average forward current.
3.0
P
F(AV)
(W)
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
δ
= 0.05
δ
= 0.1
δ
= 0.2
1.0
1.5
I
F(AV)
(A)
2.0
δ
= 0.5
δ
= 1
T
2.5
δ
=tp/T
3.0
tp
3.5
Fig. 2: Average forward current versus ambient temperature (
δ
= 0.5)
3.5
I
F(AV)
(A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 25
R th(j-a)
=R th(j-l)
R th(j-a)
=75°C/W
S=1cm²
50
T amb
(°C)
75 100 125 150 175
Fig. 3: Relative variation of thermal impedance junction ambient versus pulse duration (Printed circuit board epoxy FR4).
1.0
Zth(j-a)/Rth(j-a)
0.9
0.8
0.7
0.6
δ
= 0.5
0.5
0.4
0.3
δ
= 0.2
δ
= 0.1
0.2
0.1
0.0
1.E-01
Single pulse
1.E+00 tp(s)
1.E+01
δ
=tp/T
1.E+02
T tp
1.E+03
Fig. 4: Forward voltage drop versus forward current.
100.0
I
FM
(A) j j
10.0
j j
T j
=25°C
(Maximum values)
1.0
V
FM
(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Fig. 5: Junction capacitance versus reverse voltage applied (typical values).
Fig. 6: Reverse recovery time versus dI
F
/dt (90% confidence).
100
C(pF)
10
1 10 100
F=1MHz
V osc
T j
=30mV
=25°C
1000
100 t RR (ns)
90
80
70
60
50
40
30
20
10
0
1 10
T j
=125°C
T j
=25°C
100
V
R
I
F
=3A
=100V
1000
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STTH302S
Fig. 7: Peak reverse recovery current versus dI
F
/dt (90% confidence).
Fig. 8: Reverse recovery charges versus dI
F
/dt
(90% confidence).
6.0
I
RM
(A)
V
R
I
F
=3A
=100V
5.0
4.0
3.0
2.0
1.0
0.0
1 10
T j
=125°C
100
T j
=25°C
1000
70
60
50
40
30
100
Q RR (nC)
90
I
F
=3A
V
R
=100V
80
20
10
0
1 10
T j
=125°C
T j
=25°C
100 1000
Fig. 9: Relative variations of dynamic parameters versus junction temperature.
3.5
I
RM
; t
RR
; Q
RR
[Tj] / I
RM
; t
RR
; Q
RR
[Tj = 25°C] dI
F
I
F
=3A
/dt=200A/µs
V
R
=100V
3.0
2.5
2.0
1.5
1.0
25 50 75 100
Tj(°C)
125
Q
RR t
RR
I
RM
150 175
Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (epoxy
FR4, e = 35µm).
100
Rth(j-a)(°C/W)
90
80
70
60
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
S(cm²)
2.5
3.0
3.5
4.0
4.5
5.0
4/5
STTH302S
PACKAGE MECHANICAL DATA
SMC
E1
D
E
A1
A2
C
E2 L b
A1
A2 b c
E
E1
E2
D
L
REF.
2.90
0.15
7.75
6.60
4.40
5.55
DIMENSIONS
Millimeters Inches
Min.
1.90
0.05
Max.
2.45
0.20
Min.
0.075
0.002
Max.
0.096
0.008
0.75
3.2
0.41
8.15
7.15
4.70
6.25
1.60
0.114
0.006
0.305
0.260
0.173
0.218
0.030
0.126
0.016
0.321
0.281
0.185
0.246
0.063
FOOTPRINT
3.3
2.0
4.2
2.0
Ordering code
STTH302S
■
Epoxy meets UL 94,V0
Marking
U32
Package
SMC
Weight
0.245 g
Base qty Delivery mode
2500 Tape & reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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