STF6N95K5
N-channel 950 V, 1 Ω typ., 9 A MDmesh™ K5
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STF6N95K5
950 V
1.25 Ω
9A
25 W
• Industry’s lowest RDS(on) * area
• Industry’s best figure of merit (FoM)
3
1
• Ultra-low gate charge
2
• 100% avalanche tested
TO-220FP
• Zener-protected
Applications
Figure 1. Internal schematic diagram
D(2)
• Switching applications
Description
This very high voltage N-channel Power MOSFET
is designed using MDmesh™ K5 technology
based on an innovative proprietary vertical
structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for
applications requiring superior power density and
high efficiency.
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order code
Marking
Packages
Packaging
STF6N95K5
6N95K5
TO-220FP
Tube
September 2015
This is information on a product in full production.
DocID026412 Rev 2
1/14
www.st.com
Contents
STF6N95K5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STF6N95K5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Value
Unit
± 30
V
(1)
A
Drain current (continuous) at TC = 100 °C
(1)
6
A
IDM(2)
Drain current (pulsed)
36
A
PTOT
Total dissipation at TC = 25 °C
25
W
IAR(3)
Max current during repetitive or single
pulse avalanche
3
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
90
mJ
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC=25 °C)
2500
V
VGS
ID
ID
Parameter
Gate- source voltage
Drain current (continuous) at TC = 25 °C
9
dv/dt (4)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt (5)
MOSFET dv/dt ruggedness
50
V/ns
- 55 to 150
°C
Value
Unit
Tj
Tstg
Operating junction temperature
Storage temperature
1. Limited by package.
2. Pulse width limited by safe operating area.
3. Pulse width limited by TJmax.
4. ISD ≤ 9 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS
5. VDS ≤ 760 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
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3/14
14
Electrical characteristics
2
STF6N95K5
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS= 0, ID = 1 mA
Min.
Typ.
Max.
950
Unit
V
VGS = 0, VDS = 950 V
1
µA
VGS = 0, VDS = 950 V,
Tc=125 °C
50
µA
±10
µA
4
5
V
1
1.25
Ω
Min.
Typ.
Max.
Unit
-
450
-
pF
-
30
-
pF
-
1.6
-
pF
-
45
-
pF
-
19
-
pF
-
7
-
Ω
-
13
-
nC
-
3
-
nC
-
7
-
nC
IDSS
Zero gate voltage drain
current
IGSS
Gate body leakage current
VDS = 0, VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID= 3 A
3
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Co(tr)(1)
Test conditions
VGS=0, VDS =100 V, f=1 MHz
Equivalent capacitance time
related
Co(er)(2)
Equivalent capacitance
energy related
RG
Intrinsic gate resistance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VGS = 0, VDS = 0 to 760 V
f = 1MHz, ID=0
VDD = 760 V, ID = 6 A,
VGS =10 V,
(see Figure 16)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
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STF6N95K5
Electrical characteristics
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
Parameter
Test conditions
Turn-on delay time
VDD = 475 V, ID = 3 A,
RG=4.7 Ω, VGS=10 V
(see Figure 18)
Rise time
Turn-off delay time
Fall time
Min.
Typ.
Max.
Unit
-
12
-
ns
-
12
-
ns
-
33
-
ns
-
21
-
ns
Min.
Typ.
Max.
Unit
Table 7. Source drain diode
Symbol
ISD
ISDM
VSD(1)
1.
Parameter
Test conditions
Source-drain current
-
9
A
Source-drain current (pulsed)
-
36
A
1.6
V
Forward on voltage
ISD= 6 A, VGS=0
-
trr
Reverse recovery time
-
372
ns
Qrr
Reverse recovery charge
-
4
µC
IRRM
Reverse recovery current
ISD= 6 A, VDD= 60 V
di/dt = 100 A/µs,
(see Figure 17)
-
22
A
-
522
ns
-
5
µC
-
20
A
Min
Typ.
Max.
Unit
30
-
-
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD= 6 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 17)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0
The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.
DocID026412 Rev 2
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14
Electrical characteristics
2.1
STF6N95K5
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM07106v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
10µs
100µs
1ms
0.1
10ms
0.01
0.1
10
1
VDS(V)
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM07108v1
ID (A)
VGS=10V
AM07109v1
ID
(A)
VDS=15V
12
8
10
6
8
7V
6
4
4
6V
2
2
5V
0
0
5
10
15
20
Figure 6. Gate charge vs gate-source voltage
AM07110v1
VDS
VGS
(V)
12
VDS
(V)
700
VDD=760V
ID=6A
600
10
500
8
2
4
8
6
VGS(V)
Figure 7. Static drain-source on-resistance
AM07111v1
RDS(on)
(Ohm)
1.03
VGS=10V
1.01
0.99
0.97
400
6
300
4
2
0
0
6/14
0
0
VDS(V)
25
2
4
6
8
10
12
14
0.95
0.93
200
0.91
100
0.89
0
Qg(nC)
0.87
0.5
DocID026412 Rev 2
1.0
1.5
2.0
2.5
3.0
ID(A)
STF6N95K5
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
AM07112v1
C
(pF)
AM07113v1
Eoss (µJ)
22
20
1000
18
1
Ciss
16
14
100
12
10
8
Coss
10
6
4
Crss
2
1
0.1
1
100
10
Figure 10. Normalized gate threshold voltage vs
temperature
AM07114v1
VGS(th)
(norm)
ID=100 µA
1.2
0
0
VDS(V)
100
200
300
400
500
600 700
800
900
VDS(V)
Figure 11. Normalized on-resistance vs
temperature
AM07115v1
RDS(on)
(norm)
VGS=10V
2.5
1.1
2.0
1.0
0.9
1.5
0.8
0.7
1.0
0.6
0.5
0.5
0.4
-75
-25
25
75
125
Figure 12. Source-drain diode forward
characteristics
AM07118v1
VSD
(V)
0.95
0
-75
TJ(°C)
-25
25
75
125
TJ(°C)
Figure 13. Normalized V(BR)DSS vs temperature
AM07116v1
V(BR)DSS
(norm)
ID=1 mA
1.2
TJ=-50°C
1.1
0.85
TJ=25°C
1.0
0.75
0.9
TJ=150°C
0.65
0.55
2.0
3.0
4.0
5.0
6.0
0.8
ISD(A)
0.7
-75
DocID026412 Rev 2
-25
25
75
125
TJ(°C)
7/14
14
Electrical characteristics
STF6N95K5
Figure 14. Maximum avalanche energy vs
starting Tj
AM07117v1
EAS (mJ)
100
ID=3 A
VDD=50 V
90
80
70
60
50
40
30
20
10
0
0
8/14
20
40
60
80
100 120 140 TJ(°C)
DocID026412 Rev 2
STF6N95K5
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 17. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 18. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
DocID026412 Rev 2
10%
AM01473v1
9/14
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Package mechanical data
4
STF6N95K5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/14
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STF6N95K5
Package mechanical data
Figure 21. TO-220FP drawing
7012510_Rev_K_B
DocID026412 Rev 2
11/14
14
Package mechanical data
STF6N95K5
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
12/14
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Ø
3
3.2
DocID026412 Rev 2
STF6N95K5
5
Revision history
Revision history
Table 10. Document revision history
Date
Revision
Changes
27-May-2014
1
First release. Part number previously included in datasheet
DocID16958
03-Sep-2015
2
Updated Table 2.: Absolute maximum ratings
Minor text changes.
DocID026412 Rev 2
13/14
14
STF6N95K5
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