STMicroelectronics VNV49N04 Datasheet
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VNB49N04 - VNV49N04
OMNIFET: fully autoprotected Power MOSFET
Features
Type V
CLAMP
VNB49N04
42 V
VNV49N04
R
DS(ON)
I
LIM
20 m Ω 49
■
■
■
■
■
■
■
■
■
Linear current limitation
Thermal shutdown
Short circuit protection
Integrated clamp
Low current drawn from input pin
Diagnostic feedback through input pin
ESD protection
Direct access to the gate of the Power
MOSFET (analog driving)
Compatible with standard Power MOSFET
3
1
TO-263(D2PAK)
10
1
PowerSO-10
Description
The VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics™ VIPower™ M0 technology, intended for replacement of standard
Power MOSFETs from DC up to 50 KHz applications.
Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
Obsolete Product(s) - Obsolete Product(s)
Table 1.
Package
Device summary
Order code
Tube Tape and reel
PowerSO-10
TO-263 (D2PAK)
VNV49N04
VNB49N04
VNV49N0413TR
VNB49N0413TR
September 2013 Doc ID 1641 Rev 3 1/22 www.st.com
1
Contents
Contents
VNB49N04 - VNV49N04
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
®
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
TO-263 (D2PAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
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VNB49N04 - VNV49N04
List of tables
List of tables
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List of figures
List of figures
VNB49N04 - VNV49N04
Switching time resistive load vs R
G
(part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching time resistive load vs R
G
(part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching time resistive load vs V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Block diagram VNB49N04 - VNV49N04
Figure 1.
Block diagram
Figure 2.
Connection diagram (top view)
D2PAK
PowerSO-10
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Electrical specifications VNB49N04 - VNV49N04
Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to the conditions in table below for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document.
Table 2.
Absolute maximum rating
Symbol Parameter Value
V
DS
V
IN
I
D
I
R
V
ESD
P tot
T j
T c
T stg
Drain-source voltage (V
IN
Input voltage
Drain current
Reverse DC output current
Electrostatic discharge (R = 1.5 K Ω , C = 100 pF)
Total dissipation at T c
= 25 °C
Operating junction temperature
Case operating temperature
Storage temperature
18
Internally limited
-50
2000
125
Internally limited
Internally limited
-55 to 150
V
A
A
V
W
°C
°C
°C
Table 3.
Thermal data
Value
Symbol Parameter
PowerSO-10 D2PAK
Unit
R thj-case
Thermal resistance junction-case (max)
R thj-amb
Thermal resistance junction-ambient (max)
1
50
1
62.5
°C/W
°C/W
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VNB49N04 - VNV49N04 Electrical specifications
Table 4.
Symbol
V
CLAMP
V
CLTH
V
INCL
I
DSS
I
ISS
-40 °C < T j
< 125 °C, unless otherwise specified
Off
Parameter Test conditions Min
Drain-source clamp voltage I
D
= 200 mA; V
IN
= 0 34
Drain-source clamp threshold voltage
I
D
= 2 mA; V
IN
= 0 33
Input-source reverse clamp voltage
I
IN
= -1 mA -1.2
Zero input voltage drain current (V
IN
= 0 V)
V
DS
= 13 V; V
IN
= 0 V
V
DS
= 25 V; V
IN
= 0 V
Supply current from input pin V
DS
= 0 V; V
IN
= 10 V
Typ
42
250
Max
50
Unit
V
V
-0.1
70
220
550
V
µA
µA
µA
Table 5.
Symbol
On
(1)
Parameter Test conditions
V
R
IN(th)
DS(on)
Input threshold voltage V
DS
= V
IN
; I
D
+ I
IN
Static drain-source on resistance
V
IN
= 10 V; I
D
= 25 A
V
IN
= 5 V; I
D
= 25 A
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ Max Unit
—
—
0.04
0.05
Ω
Ω
Table 6.
Symbol
Dynamic
Parameter Test conditions g fs
(1)
Forward transconductance
V
DS
= 13 V; I
D
= 25 A; T c
= 25 °C
C
OSS
V
DS
T c
= 13 V; f = 1 MHz; V
= 25 °C
IN
= 0 V;
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min
25
Typ
30
Max Unit
S
1100 1500 pF
Table 7.
Switching
(1)
Symbol t d(on)
Parameter
Turn-on delay time
Test conditions Min
—
Typ
200
Max
600
Unit ns t r
Rise time
Turn-off delay time
V
DS
R gen
= 15 V; I
D
= 25 A; V gen
= 10 V;
= 10 Ω;
)
—
—
1300 3600
800 2400 ns ns t d(off) t f
Fall time — 300 900 ns
Doc ID 1641 Rev 3 7/22
Electrical specifications
Table 7.
Symbol
Switching
(1)
(continued)
Parameter Test conditions Min t d(on)
Turn-on delay time — t d(off) t f
Turn-off delay time
Fall time
V
R
DS gen
= 15 V; I
D
= 25 A; V gen
= 10 V;
= 1000 Ω
)
—
—
—
(di/dt) on
Turn-on current slope
V
DS
R gen
= 15 V; I
D
= 10 Ω
= 25 A; V
IN
= 10 V;
—
Q i
Total input charge V
DS
= 15 V; I
D
1.
Parameters guaranteed by design/characterization
= 25 A; V
IN
= 10 V —
VNB49N04 - VNV49N04
Typ
1.3
3.8
12
6.1
25
100
Max
3.8
10.4
24
17
Unit
µs
µs
µs
µs
A/µs nC
Table 8.
Source drain diode
Symbol Parameter Test conditions
V
SD
(1) t rr
(2)
Q
I
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
SD
SD
= 25A; V
IN
= 0 V
= 25 A; di/dt = 100 A/µs;
V
DS
= 30 V; T j
)
= 25 °C;
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
2.
Parameters guaranteed by design/characterization.
Min
—
—
—
—
Typ
250
910
7.5
Max
1.8
Unit
V ns nC
A
Table 9.
Symbol
Protections
Parameter Test conditions Min Typ Max Unit
ILIM t dlim
(1)
Drain current limit
Step response current limit
V
IN
= 10 V; V
DS
= 13 V
V
IN
= 5 V; V
DS
= 13 V
28
28
49
49
V
IN
= 10 V 35
V
IN
= 5 V 90
150
70
70
50
150
A
A
µs
µs
T jsh
T
Overtemperature shutdown
Overtemperature reset 135
°C
°C
Fault sink current
V
IN
= 10 V; V
DS
= 13 V 50 mA
I
E as
Single pulse avalanche energy
V
IN
= 5 V; V
DS
= 13 V
Starting T
V
IN j
= 25 °C; V
DS
= 10 V; R gen
= 20 V;
= 1 K Ω ; L = 6 mH
20
Obsolete Product(s) - Obsolete Product(s)
mA
4 J
1.
Parameters guaranteed by design/characterization.
8/22 Doc ID 1641 Rev 3
VNB49N04 - VNV49N04 Electrical specifications
Figure 3.
Thermal impedance for D2PAK /
PowerSO-10
Figure 4.
Derating curve
Figure 5.
Output characteristics Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance vs input voltage
Figure 8.
Static drain-source on resistance
(part 1)
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Electrical specifications VNB49N04 - VNV49N04
Figure 9.
Static drain-source on resistance
(part 2)
Figure 10.
Input charge vs input voltage
30
25
20
15
10
5
0
R
DS(on )
(mOhm)
40
35
5 10
V
IN
= 5V
15
V
IN
= 10V
20 25
I
D
(A)
Figure 11.
Capacitance variations Figure 12.
Normalized input threshold voltage vs temperature
Figure 13.
Normalized on resistance vs temperature (part 1)
Figure 14.
Normalized on resistance vs temperature (part 2)
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VNB49N04 - VNV49N04
Figure 15.
Turn-on current slope (part 1)
Electrical specifications
Figure 16.
Turn-on current slope (part 2)
Figure 17.
Turn-off drain-source voltage slope
(part 1)
Figure 18.
Turn-off drain-source voltage slope
(part 2)
Figure 19.
Switching time resistive load vs R
G
(part 1)
Figure 20.
Switching time resistive load vs R
G
(part 2)
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Electrical specifications VNB49N04 - VNV49N04
Figure 21.
Switching time resistive load vs V
IN
Figure 22.
Current limit vs junction temperature
Figure 23.
Step response current limit Figure 24.
Source drain diode forward characteristics
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VNB49N04 - VNV49N04
2.5 Waveforms
Figure 25.
Unclamped inductive load test circuits
Electrical specifications
Figure 26.
Unclamped inductive waveforms
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Doc ID 1641 Rev 3 13/22
Electrical specifications
Figure 27.
Switching time test circuits for resistive load
VNB49N04 - VNV49N04
Figure 28.
Input charge test circuit
Obsolete Product(s) - Obsolete Product(s)
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VNB49N04 - VNV49N04 Electrical specifications
Figure 29.
Test circuit for inductive load switching and diode recovery times
Figure 30.
Waveforms
Obsolete Product(s) - Obsolete Product(s)
Doc ID 1641 Rev 3 15/22
Protection features VNB49N04 - VNV49N04
During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50 KHz. The only difference from the user’s standpoint is that a small DC current (IISS) flows into the INPUT pin in order to supply the internal circuitry.
The device integrates:
● Overvoltage clamp protection:
●
●
Internally set at 42V, along with the rugged avalanche characteristics of the Power
MOSFET stage give this device unrivalled ruggedness and energy handling capability.
This feature is mainly important when driving inductive loads.
Linear current limiter circuit:
Limits the drain current ID to ILIM whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
Overtemperature and short circuit protection:
●
These are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150 °C. The device is automatically restarted when the chip temperature falls below 135 °C.
Status feedback:
In the case of an overtemperature fault condition, a status feedback is provided through the INPUT pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100
Ω
. The failure can be detected by monitoring the voltage at the INPUT pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human
Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R
DS(ON)
).
Obsolete Product(s) - Obsolete Product(s)
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VNB49N04 - VNV49N04
4
Package and packing information
Package and packing information
4.1 ECOPACK
®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
4.2 TO-263 (D2PAK) mechanical data
Table 10.
TO-263 (D2PAK) mechanical data mm. Inch
Dim.
Min. Typ Max. Min. Typ. Max.
A 4.30 —
A1 2.49 —
B 0.70 —
B2 1.25 —
C 0.45 —
C2 1.21 —
D 8.95 —
E 10 —
G 4.88 —
L 15 —
L2 1.27 —
L3 1.4 —
1.4 0.049 —
1.4 0.050 —
0.181
0.106
0.036
0.055
0.023
0.053
0.368
0.404
0.208
0.625
0.055
0.068
Obsolete Product(s) - Obsolete Product(s)
Doc ID 1641 Rev 3 17/22
Package and packing information
Figure 31.
TO-263 (D2PAK) package dimension
D
A
C2 DETAIL "A"
VNB49N04 - VNV49N04
C
A1
B2 B
DETAIL "A"
E G
L2 L
L3
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18/22 Doc ID 1641 Rev 3
VNB49N04 - VNV49N04 Package and packing information
Table 11.
PowerSO-10 mechanical data mm. Inch
Dim.
Min. Typ Max. Min. Typ. Max.
A 3.35
A1 0.00
B 0.40 c 0.35
D 9.40
D1 7.40
E 9.30
E1 7.20
E2 7.20
E3 6.10
0.144
0.004
0.024
0.022
0.378
0.300
0.374
0.291
300
0.250
E4 5.90 e 1.27
F 1.25
0.240
0.050
0.053
H 13.80 h 0.50
Q 1.70
0º 8º
0.567
0.002
0.067
Obsolete Product(s) - Obsolete Product(s)
Doc ID 1641 Rev 3 19/22
Package and packing information
Figure 32.
PowerSO-10 package dimension
H E
A
F
A1 h
B
0.10 A B
10
E2 E E4
1 e
0.25
D
= =
B DETAIL "A"
SEATING
PLANE
A
C
DETAIL "A"
α
SEATING
PLANE
A1
L
VNB49N04 - VNV49N04
Obsolete Product(s) - Obsolete Product(s)
20/22 Doc ID 1641 Rev 3
VNB49N04 - VNV49N04 Revision history
Table 12.
Document revision history
Date Revision
01-Oct-1999
25-Nov-2010
20-Sep-2013
1
2
3
Change
Initial release.
Changed document template.
Removed ISOWATT220 package.
Updated Figure 9: Static drain-source on resistance (part 2)
Updated Disclaimer.
Obsolete Product(s) - Obsolete Product(s)
Doc ID 1641 Rev 3 21/22
VNB49N04 - VNV49N04
Please Read Carefully:
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22/22 Doc ID 1641 Rev 3
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