®
VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
V c lamp
70 V
70 V
70 V
70 V
R
DS(on)
0.1
Ω
0.1
Ω
0.1
Ω
0.1
Ω
I lim
10 A
10 A
10 A
10 A
■
■
■
■
■
■
■
■
■
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0
Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect
BLOCK DIAGRAM (
∗
)
1
D2PAK
TO-263
3
1
2
3
ISOWATT220
SOT82-FM
10
1
PowerSO-10 the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
(
∗
) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
June 1998 1/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
ABSOLUTE MAXIMUM RATING
Symbol Parameter
P tot
T j
T c
T stg
V
DS
V in
I
D
I
R
V esd
Drain-source Voltage (V in
= 0)
Input Voltage
Drain Current
Reverse DC Output Current
Electrostatic Discharge (C= 100 pF,
R=1.5 K
Ω
)
Total Dissipation at T c
= 25 o
C
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
PowerSO-10
D2PAK
Value
SOT-82FM ISOWATT220
Internally Clamped
18
Internally Limited
-14
2000
Unit
A
A
V
V
V
50 9.5
Internally Limited
Internally Limited
-55 to 150
31 W o
C o
C o
C
THERMAL DATA
R th j-case
R th j-a mb
Thermal Resistance
Junction-case Max
Thermal Resistance
Junction-ambient Max
ISOWATT220 PowerSO-10 SOT82-FM
4
62.5
2.5
50
13
100
D2PAK
2.5
62.5
o
C/W o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
OFF
Symbol
V
CLAMP
V
V
I
I
CLTH
INCL
DSS
I SS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (V in
= 0)
Supply Current from
Input Pin
Test Conditions
I
D
= 200 mA V in
= 0
I
D
= 2 mA V in
= 0
I in
= -1 mA
V
DS
= 13 V V in
= 0
V
DS
= 25 V V in
= 0
V
DS
= 0 V V in
= 10 V
Min.
60
55
-1
Typ.
70
250
ON (
∗
)
Symbol
V
IN(th)
R
DS(on)
Parameter
Input Threshold
Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V in
I
D
+ Ii n
= 1 mA
V in
= 10 V I
D
= 5 A
V in
= 5 V I
D
= 5 A
Min.
0.8
Typ.
Max.
80
Unit
V
-0.3
50
200
500
V
Max.
3
0.1
0.14
Unit
V
Ω
Ω
V
µ
A
µ
A
µ
A
2/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symbol g fs
(
∗
)
C oss
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
V
DS
= 13 V I
D
= 5 A
VDS = 13 V f = 1 MHz V in
= 0
SWITCHING (**)
Symbol t d(on) t r t d(off) t f t d(on) t r t d(off) t f
(di/dt) on
Q i
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
V
DD gen
= 15 V I
= 10 V R d
= 5 A gen
= 10
Ω
(see figure 3)
V
V
DD gen
= 15 V I
= 10 V R d
= 5 A gen
= 1000
Ω
(see figure 3)
Turn-on Current Slope V
V
DD in
= 15 V I
D
= 10 V R
= 5 A gen
= 10
Ω
Total Input Charge V
DD
= 12 V I
D
= 5 A V in
= 10 V
SOURCE DRAIN DIODE
I
Symbol Parameter
V
SD
(
∗
) Forward On Voltage t rr
(
∗∗
)
Q rr
RRM
(
∗∗
(
)
∗∗
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
I
SD
= 5 A V in
= 0
I
V
SD
= 5 A di/dt = 100 A/
µ s
DD
= 30 V T j
= 25 o
C
(see test circuit, figure 5)
Min.
6
Typ.
8
Max.
Unit
S
350 500 pF
Min.
Typ.
50
80
230
100
600
0.9
3.8
1.7
60
30
Max.
100
160
400
180
900
2
6
2.5
Unit ns ns ns ns ns
µ s
µ s
µ s
A/
µ s nC
Min.
Typ.
Max.
1.6
125
0.3
4.8
Unit
V ns
µ
C
A
PROTECTION
Symbol Parameter Test Conditions
I lim
Drain Current Limit V in
= 10 V V
DS
= 13 V
V in
= 5 V V
DS
= 13 V t dlim
(
∗∗
) Step Response
Current Limit
V in
= 10 V
V in
= 5 V
T jsh
(
∗∗
) Overtemperature
Shutdown
T jrs
(
∗∗
) Overtemperature Reset
I gf
(
∗∗
) Fault Sink Current V in
= 10 V V
DS
= 13 V
V in
= 5 V V
DS
= 13 V
E as
(
∗∗
) Single Pulse
Avalanche Energy starting T
V in j
= 10 V R
(
∗
) Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
(
∗∗
) Parameters guaranteed by design/characterization
= 25 ge n o
C V
DD
= 20 V
= 1 K
Ω
L = 10 mH
Min.
7
7
150
135
0.4
Typ.
10
10
20
50
Max.
14
14
30
80
50
20
Unit
A
A
µ s
µ s o
C o
C mA mA
J
3/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
PROTECTION FEATURES
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (I iss
) flows into the Input pin in order to supply the internal circuitry.
The device integrates:
OVERVOLTAGE CLAMP PROTECTION: internally set at 70V, along with the rugged avalanche characteristics of the Power
MOSFET stage give this device unrivalled ruggedness and energy handling capability.
This feature is mainly important when driving inductive loads.
LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh
.
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150 o
C. The device is automatically restarted when the chip temperature falls below 135 o
C.
STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100
Ω
.
The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R
DS(on)
).
4/14
Thermal Impedance For ISOWATT220
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Thermal Impedance For D2PAK / PowerSO-10
Derating Curve Output Characteristics
Transconductance Static Drain-Source On Resistance vs Input
Voltage
5/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Static Drain-Source On Resistance Static Drain-Source On Resistance
Input Charge vs Input Voltage Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
6/14
Normalized On Resistance vs Temperature
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Turn-on Current Slope
Turn-on Current Slope Turn-off Drain-Source Voltage Slope
Turn-off Drain-Source Voltage Slope Switching Time Resistive Load
7/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Switching Time Resistive Load Switching Time Resistive Load
Current Limit vs Junction Temperature Step Response Current Limit
Source Drain Diode Forward Characteristics
8/14
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Input Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 6: Waveforms
9/14
DIM.
C
C2
D
E
A
A1
B
B2
L2
L3
G
L
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
1.25
0.45
1.21
8.95
MIN.
4.3
2.49
0.7
10
4.88
15
1.27
1.4
TO-263 (D2PAK) MECHANICAL DATA
mm
TYP.
1.4
0.6
1.36
9.35
MAX.
4.6
2.69
0.93
10.28
5.28
15.85
1.4
1.75
MIN.
0.169
0.098
0.027
0.049
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
inch
TYP.
E A
C2
L2
MAX.
0.181
0.106
0.036
0.055
0.023
0.053
0.368
0.404
0.208
0.624
0.055
0.068
D
L
L3
A1
B2
B
C
G
P011P6/C
10/14
DIM.
c
D e
E
L
L1
A
A1 b b1 b2
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
0.45
10.5
2.2
7.45
MIN.
2.85
1.47
0.40
1.4
1.3
15.5
1.95
SOT82-FM MECHANICAL DATA
mm
TYP.
MAX.
3.05
1.67
0.60
1.6
1.5
0.6
10.9
2.8
7.75
15.9
2.35
0.177
4.133
0.866
2.933
MIN.
1.122
0.578
0.157
0.551
0.511
6.102
0.767
inch
TYP.
0.236
4.291
1.102
3.051
MAX.
1.200
0.657
0.236
0.630
0.590
6.260
0.925
P032R
11/14
DIM.
H
L2
L3
F1
F2
G
G1
D
E
F
A
B
L4
L6
L7
Ø
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
1.15
1.15
4.95
2.4
10
MIN.
4.4
2.5
2.5
0.4
0.75
28.6
9.8
15.9
9
3
ISOWATT220 MECHANICAL DATA
mm
TYP.
16
1.7
1.7
5.2
2.7
10.4
MAX.
4.6
2.7
2.75
0.7
1
30.6
10.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.015
0.030
0.045
0.045
0.195
0.094
0.393
1.126
0.385
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.645
0.366
0.126
12/14
¯
L6
L7
L3
L2 L4
1 2 3
P011G
VNB10N07-VNK10N07FM-VNP10N07FI-VNV10N07
DIM.
E2
E3
E4
D
D1
E
E1
A
A1
B c
H h e
F
L q
α
1.25
13.80
1.20
0 o
MIN.
3.35
0.00
0.40
0.35
9.40
7.40
9.30
7.20
7.20
6.10
5.90
PowerSO-10 MECHANICAL DATA
mm
TYP.
1.27
0.50
1.70
1.35
14.40
1.80
8 o
MAX.
3.65
0.10
0.60
0.55
9.60
7.60
9.50
7.40
7.60
6.35
6.10
MIN.
0.132
0.000
0.016
0.013
0.370
0.291
0.366
0.283
0.283
0.240
0.232
0.049
0.543
0.047
inch
TYP.
0.050
0.002
0.067
H E
A
F
A1 h
B
0.10 A B
10 6
E2 E3 E1
E4
1 5 e
0.25
M
D
= =
B DETAIL "A"
SEATING
PLANE
Q
A
C
SEATING
PLANE
A1
L
DETAIL "A"
α
0068039-C
13/14
MAX.
0.144
0.004
0.024
0.022
0.378
0.300
0.374
0.291
0.300
0.250
0.240
0.053
0.567
0.071
VNB10N07/K10N07FM/VNP10N07FI/VNV10N07
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DocID1642 Rev 6 14/14
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