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STAC3932B
Datasheet
HF/VHF/UHF RF power N-channel MOSFET
1
1
2
Pin
1
2
3
3
3
STAC780-4B
Pin connection
Connection
Drain
Source (bottom side)
Gate
Features
Order code
STAC3932B
Frequency
123 MHz
V
DD
100 V
P
OUT
Gain
580 W 24.6 dB
• Excellent thermal stability
• Common source push-pull configuration
• P
OUT
= 580 W typ. with 24.6 dB gain at 123 MHz
• In compliance with the 2002/95/EC European directive
• ST air-cavity STAC packaging technology
Efficiency
70 %
Description
The STAC3932B is an N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 250 MHz.
Product status
STAC3932B
Product summary
Order code
Marking
Package
Packing
Base / Bulk qty
STAC3932B
STAC3932
STAC780-4B
Box
20 / 80
DS6157 - Rev 8 - July 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
STAC3932B
Electrical data
1
1.1
1.2
1.3
Electrical data
Maximum ratings
Table 1. Absolute maximum ratings (T
CASE
= 25 °C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
T
J
T
STG
1. T
J
= 150 °C
Drain source voltage
Drain-gate voltage (R
GS
= 1 MΩ)
Gate-source voltage
Drain current
Parameter
Power dissipation
Maximum operating junction temperature
Storage temperature range
Thermal data
Symbol
R thJC
Junction - case thermal resistance
Table 2. Thermal data
Parameter
ESD protection characteristics
Symbol
HBM
Table 3. ESD protection
Test Methodology
Human Body Model (per JESD22-A114)
Value
250
250
±20
20
625
200
-65 to +150
Unit
V
V
V
A
W
°C
°C
Value
0.28
Unit
°C/W
Class
2
DS6157 - Rev 8 page 2/16
2
2.1
2.2
STAC3932B
Electrical characteristics
Electrical characteristics
T
CASE
= +25 °C (unless otherwise specified)
Static
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
DS(ON)
V
TH
G
FS
C
ISS
C
OSS
C
RSS
Dynamic
Table 4. Static
Drain - Source Breakdown voltage
Parameter Test conditions
V
GS
= 0 V, I
DS
= 100 mA,
T
J
= 150 °C
Zero gate voltage drain leakage current
Gate - Source leakage current
Drain - Source on voltage
Gate - Source threshold voltage
Forward transconductance
Input capacitance
Ouput capacitance
Reverse transfer capacitance
V
GS
= 0 V, V
DS
= 100 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= 10 V, I
D
= 5 A
I
DS
= 250 mA
V
DS
= 10 V, I
D
= 2.5 A
V
GS
= 0 V, V
DS
= 100 V, f = 1
MHz
Min.
250
2.0
3.0
Symbol
P
OUT
P
OUT ŋ
D ŋ
D
Parameter
Output power
Output power
Drain efficiency
Drain efficiency
Table 5. Dynamic
Test conditions
CW, P
IN
= 2 W
Pulse PW = 1 ms, DC = 10
% , P
IN
= 8 W
CW, P
IN
= 2 W
Pulse PW = 1 ms, DC = 10
% , P
IN
= 8 W
Min.
450
Typ.
Max.
2.5
492
134
5.2
1
250
3.5
4.0
5.0
Unit
V mA nA
V
V
S pF pF pF
Typ.
580
900
70
65
Max.
-
-
-
-
Unit
W
W
%
%
1. V
DD
= 100 V, I
DQ
= 2 x 250 mA, f = 123 MHz
DS6157 - Rev 8 page 3/16
STAC3932B
Impedances
3
Note:
Impedances
Typical input impedance
Figure 1. Impedance data
D
Z
DL
Typical load impedance
G
Z
IN
S
Measured gate-to-gate and drain-to-drain, respectively (balanced configuration).
Frequency
123 MHz (pulse)
123 MHz (CW)
64 MHz (pulse)
Table 6. Impedance data
Z
IN
(Ω)
1.0 - j 4.80
0.8 - j 3.45
1.4 - j 10.0
Z
DL
(Ω)
6.3 + j 10.5
5.0 + j 13.0
12.8 + j 14.0
DS6157 - Rev 8 page 4/16
4
STAC3932B
Typical performance
Typical performance
Figure 2. Capacitances vs drain supply voltage
800
700
600
500
400
300
200
100
0
0
C
ISS
10 20 30 40 50 60
Vdd (V)
70 80 90
C
OSS
C
RSS
100 110
Figure 3. Safe operating area
100
10
Operation limited
by Rds(on)
1
0
1
Single Pulse
Tcase = +25 °C / Tj = +200°C
10 100
Drain supply voltage - Vdd (V)
1ms
10ms
DC
1000
AM01107v1
AM0110 6v1
DS6157 - Rev 8 page 5/16
DS6157 - Rev 8
0.30
Figure 4. Transient thermal impedance
Single - Repetitive pulse
AM06094v1
0.25
0.20
0.15
0.10
0.05
0.00
1.E-04 1.E-03 1.E-02 1.E-01
Rectangular power pulse width (s)
Figure 5. Transient thermal model single pulse
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.E+00
STAC3932B
Typical performance
AM06106V1 page 6/16
DS6157 - Rev 8
Figure 6. Zero temperature coefficient point
STAC3932B
Typical performance
700
600
500
Figure 7. Output power and efficiency vs input power (CW)
400
300
200
100
0
0.0
Pout Eff
1.0
2.0
Input power (W)
V
F = 123 MHz
DD
= 100 V
I
DQ
= 2 x 250 mA
3.0
100
90
80
70
60
50
40
4.0
30
AM01109v1
AM01108v1 page 7/16
DS6157 - Rev 8
STAC3932B
Typical performance
Figure 8. Gain vs output power (CW)
36
34
32
30
28
26
24
22
20
0
I
V
F = 123 MHz
DD
= 100 V
DQ
= 2 x 250 mA
100 200 300 400
Output power (W)
500 600 700
AM01110v1
Figure 9. Output power and efficiency vs input power (PW = 1 ms, DC = 10%)
1000
900
800
700
600
500
400
300
200
100
0
0
Pout
1 2
Efficiency
3 4 5
Input power (W)
I
DQ
V
F = 123 MHz
DD
= 100V
= 2 x 250 mA
6 7 8 9
70
60
50
40
100
90
80
30
20
10
0
AM01111v1 page 8/16
5
5.1
Test circuit
Electrical schematic and BOM
Figure 10. Electrical schematic
STAC3932B
Test circuit
DS6157 - Rev 8
Component
C12
C13, C14
R1, R2
R3, R4
L1
FB1, FB2
B1
T1
TL1, TL2
TL3, TL4
TL5, TL6
TL7, TL8
TL9, TL10
TL11
Board
C1
C2
C3, C4
C5, C8
C6
C7
C9
C10
C11
AM01103v1
Table 7. Bill of materials
Description
270 pF ATC 100B chip capacitor
180 pF ATC 100B chip capacitor
750 pF ATC 700B chip capacitor
43 pF ATC 100B chip capacitor
20 pF ATC 100B chip capacitor
1000 pF ATC 100C chip capacitor
5.6 pF ATC 100B chip capacitor
2200 pF ATC 100C chip capacitor
470 pF ATC 100B chip capacitor
100 µF, 200 V electrolytic capacitor
1200 pF ATC 700B chip capacitor
15 Ω 1/4 W chip resistor
30 Ω 1/4 W axial lead resistor
3 turns, 16 ga magnet wire, Id 3/8", .165" turn spacing, 78 nH ferrite bead, Fair-Rite # 2743019447
1/4 λ balun transformer, RG316-25 Ω ,16.5"
20 ga teflon coated wire thru 4 copper tubes OD 1/8"x 1.5"
0.740" x 0.200" microstrip
0.360" x 0.200" microstrip
0.480" x 0.350" microstrip
0.220" x 0.350" microstrip
0.350" x 0.660" microstrip
0.415" x 0.200" microstrip
0.062" FR-4 page 9/16
5.2
Board and layout
Figure 11. Test circuit PCB photo
STAC3932B
Board and layout
Figure 12. Test circuit layout
AM01104v1
DS6157 - Rev 8
AM01105 v1 page 10/16
6
6.1
STAC3932B
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
STAC780-4B package information
Figure 13. STAC780-4B package outline
DS6157 - Rev 8
DM00481937 rev.2
page 11/16
DS6157 - Rev 8
Symbol
R2 r s
Θ
CH1
CH2
M
M p q
R1
H
I
J
F
G
K
L
A
A1
B
C
D
E
Table 8. STAC780-4B mechanical data
Milimeters
Typ
1.52
4.83
9.52
27.69
3.20
3.43
3.30
7.14
Min
3.76
5.03
4.57
9.65
17.78
33.88
0.13
0.97
1.45
0.64
1.52
1.52
0.51
3.25
3.51
3.38
7.21
10°
2.03
1.52
STAC3932B
STAC780-4B package information
1.70
5.33
9.78
28.19
3.30
3.58
3.45
7.29
Max
3.86
5.13
5.08
9.91
18.08
34.19
0.18
1.14
page 12/16
STAC3932B
Marking information
6.2
Marking information
B
PACKAGE FACE : TOP
A
C
F
D
G
E
H I
LEGEND
Marking Composition Field
C - Assy Pl
(PP)
D - BE Sequenc
(LLL)
E - Diffusion Traceability Plant
(WX)
F - COUNTRY OF ORIGIN
(MAX CHAR ALLOWED = 3)
G - Test & Finishing Plant
(TF)
H - Assy Year
(Y)
I - Assy Week
(WW)
DS6157 - Rev 8 page 13/16
STAC3932B
Revision history
Date
06-Mar-2009
18-Feb-2010
16-Mar-2010
06-Jul-2011
22-Sep-2011
01-Jul-2013
03-Apr-2020
14-Jul-2020
Table 9. Document revision history
Revision
1
2
3
4
5
6
7
8
Changes
First release.
Updated description on cover page.
Updated Figure 7: Maximum safe operating area.
Added Figure 8: Transient thermal impedance. and Figure 9: Transient thermal model.
Updated Chapter 7: Package mechanical data.
Added Chapter 8: Marking, packing and shipping specifications.
Update values for L and M in Table 9: STAC244B mechanical data.
Modified pin labeling in Figure 1: Pin connection.
Minor text corrections throughout document.
Updated package information. Added Section 1.3 ESD protection characteristics .
DS6157 - Rev 8 page 14/16
STAC3932B
Contents
Contents
DS6157 - Rev 8 page 15/16
STAC3932B
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS6157 - Rev 8 page 16/16
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