STMicroelectronics RF2L24280CB4 Datasheet
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जाहिरात
RF2L24280CB4
Datasheet
280 W, 28 V, 2.4 to 2.5 GHz RF power LDMOS transistor
1
3
4
5
Pin
1
2
2
5
4
3
D4E
Pin connection
Connection
Drain A
Drain B
Source (bottom side)
Gate B
Gate A
Features
Order code
RF2L24280CB4
Frequency
2450 MHz
V
DD
28 V
P
OUT
280 W
Gain
13 dB
Efficiency
60%
• High efficiency and linear gain operations
• Integrated ESD protection
• Internally matched pair transistors in push-pull configuration
• Large positive and negative gate-source voltage range for improved class C operation
• Excellent thermal stability, low HCI drift
• In compliance with the European directive 2002/95/EC
Applications
• Industrial, scientific and medical
Description
The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation.
Product status link
RF2L24280CB4
Product summary
Order code RF2L24280CB4
Marking
Package
2L24280
D4E
Packing
Base/bulk quantity
Tray
20/100
DS13569 - Rev 3 - September 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
RF2L24280CB4
Electrical ratings
Electrical ratings
Symbol
V
DS
V
GS
V
DD
T
STG
T
J
Table 1. Absolute maximum ratings (T
C
= 25 °C)
Parameter
Drain-source voltage
Gate-source voltage
Maximum operating voltage
Storage temperature range
Maximum junction temperature
Table 2. Thermal data
Symbol
R thJC
1. T
C
= 85 °C , T
J
= 200 °C, DC test.
Parameter
Thermal resistance, junction-to-case
Symbol
HBM
CDM
Table 3. ESD protection
Test methodology
Human body model (according to ANSI/ESDA/JEDEC JS001-2017)
Charge device model (according to ANSI/ESDA/JEDEC JS002-2014)
Value
65
-6 to 10
32
-65 to 150
200
V
°C
°C
Unit
V
V
Value
0.2
Class
2
C3
Unit
°C/W
DS13569 - Rev 3 page 2/11
RF2L24280CB4
Electrical characteristics
2
Note:
Electrical characteristics
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS(Q)
V
DS(on)
I
DS(on)
R
DS(on)
Table 4. Static
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
DS
= 100 µA
Zero gate voltage drain leakage current
V
GS
= 0 V, V
DS
= 28 V
V
GS
= 0 V, V
DS
= 50 V
Gate-source leakage current
Gate threshold voltage
V
GS
= -6/10 V, V
DS
= 0 V
V
DS
= 28 V, I
DS
= 600 µA
Gate quiescent voltage
Static drain-source on-voltage
V
DS
= 2 V, I
DS
= 20 mA
V
GS
= 10 V, I
DS
= 1 A
Static drain-source on-current V
GS
= 10 V, V
DS
= 100 mV
Drain-source on-state resistance V
GS
= 10 V, I
DS
= 1 A
Symbol
P
OUT
G
PS
η
D
VSWR
Parameter
Output power
Power gain
Drain efficiency
Load mismatch
Table 5. Dynamic
Test conditions f = 2450 MHz, pulsed CW,
2.5 dB compression
P
OUT
= 280 W, all phases
V
DD
= 28 V, I
DQ
= 10 mA, pulse width = 10 μs, duty cycle = 10%.
1.5
0.8
60
0.5
Min.
Typ.
Max.
Unit
65 V
-
-
1 μA
-
-
-
-
±100
2.5
2.7
nA
V
V
-
-
120
1.5
1 mV
A
Ω
Min.
Typ.
Max.
Unit
-
280
13
W dB
-
60
10:1
%
DS13569 - Rev 3 page 3/11
3
Note:
RF2L24280CB4
Typical performances
Typical performances
14
13
Figure 1. Power gain and drain efficiency vs output power at V
DD
= 28 V
16
GADG111120201652GT
70
15 60
50
40
30 12
11
10
9
38
2400 MHz 2450 MHz
40 42 44
I
DQ
= 10 mA, pulse width = 10 μs, duty cycle = 10%.
46 48
P
OUT
(dbm)
50
2500 MHz
52 54
20
10
0
56
Note:
13
12
11
15
14
Figure 2. Power gain and drain efficiency vs output power at V
DD
= 32 V
16
GADG111120201713GT
70
60
50
40
10
9
38
2400 MHz 2450 MHz
40 42 44 46 48
P
OUT
(dbm)
I
DQ
= 10 mA, pulse width = 10 μs, duty cycle = 10%.
50
2500 MHz
52 54
10
0
56
30
20
DS13569 - Rev 3 page 4/11
4
Test circuits
Figure 3. Test circuit layout (dimensions are in mm)
40 40
RF2L24280CB4
Test circuits
Component
C1, C2, C3, C4, C5, C6
C7, C8, C9, C10
R1, R2
R3
PCB
GADG030220210813GT
Table 6. Components list
Value
6.8 pF
10 μF
10 Ω
15 Ω
Size
0805
Reference
ATC600F
1210
0603
1206
X7R
0.762 mm (0.030'') thick, ɛr = 3.48, Rogers RO4350B
Figure 4. Test circuit photo
GADG111120201723GT
DS13569 - Rev 3 page 5/11
5
5.1
RF2L24280CB4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
D4E package information
Figure 5. D4E package outline
DS13569 - Rev 3
DM00666713_2 page 6/11
DS13569 - Rev 3
Symbol
P
Q
R
S
T
V
R1
CH1
G
H
L
M
N
A
B
C
E
F
Min.
10.04
5.72
16.11
1.51
0.10
35.44
11.56
1.92
3.06
9.25
4.17
30.96
1.55
2.09
41.08
13.60
Table 7. D4E package mechanical data
Millimeters
Typ.
4.55
31.24
1.62
2.16
41.22
13.72
1.59
1.19
10.16
5.85
16.62
1.78
0.13
35.56
11.68
2.04
3.18
9.40
RF2L24280CB4
D4E package information
Max.
10.28
3.48
17.13
2.05
0.16
35.68
11.80
2.16
3.30
9.50
4.93
31.52
1.69
2.23
13.84
page 7/11
5.2
RF2L24280CB4
Marking information
Marking information
PACKAGE FACE : TOP
C
E
D
A B
F G H
Figure 6. Marking composition
LEGEND
Unmarkable Surface
Marking Composition Field
A - STANDARD ST LOGO
B - ECO level
(e4)
C
D
- MARKING AREA
- ADDITIONAL
INFORMATION
(MAX CHAR ALLOWED = 7)
E - COUNTRY OF ORIGIN
(MAX CHAR ALLOWED = 3)
F - Assy Plant
(PP)
G - Assy Year
(Y)
H - Assy Week
(WW)
GADG040220211644GT
DS13569 - Rev 3 page 8/11
RF2L24280CB4
Revision history
Date
16-Nov-2020
09-Feb-2021
21-Sep-2021
Revision
1
2
3
Table 8. Document revision history
Changes
First release.
Updated Features and Device summary in cover page.
Updated Table 3. ESD protection .
Updated Table 5. Dynamic .
Updated Figure 3. Test circuit layout and added Table 6. Components list .
Minor text changes.
Updated Table 3. ESD protection
.
Minor text changes.
DS13569 - Rev 3 page 9/11
RF2L24280CB4
Contents
Contents
DS13569 - Rev 3 page 10/11
RF2L24280CB4
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DS13569 - Rev 3 page 11/11
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