STMicroelectronics SD2931-12MR Datasheet
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SD2931-12MR
Datasheet
150 W – 50 V moisture resistant HF/VHF DMOS transistor
M174MR epoxy sealed
1. Drain
2. Source
3. Gate
4. Source
4
3
1
2
Features
• Gold metallization
• Excellent thermal stability
• Common source push-pull configuration
• P
OUT
= 150 W min. with 14 dB gain @ 175 MHz
• Thermally enhanced packing for lower junction temperatures
• G
FS
and V
GS
sort marked on unit
• Moisture resistant package specifically designed to operate in extreme environments
Description
The SD2931-12MR is a gold metallized N-channel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is used for 50 V
DC large signal applications up to 230 MHz.
The device is mechanically compatible with the SD2931 but offers better thermal capability (25% lower thermal resistance), representing the best-in-class in transistors for ISM applications, where reliability and ruggedness are critical factors.
The SD2931-12MR benefits from the latest generation of environmentally designed packing, ruggedized against cyclic high moisture operation and severe storage conditions.
Product status
SD2931-12MR
Product summary
Order code SD2931-12MR
Marking
Package
Packing
SD2931-11MR
M174
Plastic tray
DS9247 - Rev 4 - February 2018
For further information contact your local STMicroelectronics sales office.
www.st.com/
1
Electrical data
1.1
1.2
Maximum ratings
T
CASE
= 25 °C
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
T
J
T
STG
Table 1. Absolute maximum ratings
Parameter
Drain source voltage
Drain-gate voltage (R
GS
= 1 MΩ)
Gate-source voltage
Drain current
Power dissipation
Max. operating junction temperature
Storage temperature
Thermal data
Symbol
R thJC
Table 2. Thermal data
Parameter
Junction-to-case thermal resistance
Value
125
125
±40
20
389
200
-65 to +150
Value
0.45
SD2931-12MR
Electrical data
Unit
°C/W
A
W
°C
°C
Unit
V
V
V
DS9247 - Rev 4 page 2/16
2
SD2931-12MR
Electrical characteristics
Electrical characteristics
T
CASE
= 25 °C
Table 3. Static
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
Test conditions
V
GS
= 0 V I
DS
= 100 mA
V
GS
= 0 V V
DS
= 5 V
V
GS
= 0 V V
DS
= 50 V
V
GS
= 20 V V
DS
= 0 V
V
V
V
DS
GS
DS
V
GS
= 10 V I
= 10 V I
= 10 V I
D
D
D
= 250 mA
= 10 A
= 5 A
= 0 V V
DS
= 50 V f = 1 MHz
V
GS
= 0 V V
DS
= 50 V f = 1 MHz
V
GS
= 0 V V
DS
= 50 V f = 1 MHz
1. V
GS(Q)
and G
FS
sorted with alpha/numeric code marked on unit.
Table 4. V
GS
and G
FS
sorts
Code
I
J
K
V
GS
2.65 - 3.15
2.65 - 3.15
2.65 - 3.15
G
FS
6.0 - 6.5
6.5 - 7.0
7.0 - 7.5
Min.
125
Typ.
Max.
See table below
20
50
250
3.0
See table below
480
190
18
Unit
V
V
V
µA nA mho pF pF pF
Symbol
P
OUT
G
PS
η
D
Load mismatch
Table 5. Dynamic
Test conditions
V
DD
= 50 V I
DQ
= 250 mA f = 175 MHz
V
DD
= 50 V I
DQ
= 250 mA P
OUT
= 150 W f = 175 MHz
V
DD
= 50 V I
DQ
= 250 mA P
OUT
= 150 W f = 175 MHz
V
DD
= 50 V I
DQ
= 250 mA P
OUT
= 150 W f = 175 MHz all phase angles
Min.
150
14
55
10:1
Typ.
15
65
Max.
Unit
W dB
%
VSWR
DS9247 - Rev 4 page 3/16
3
SD2931-12MR
Transient thermal impedance
Transient thermal impedance
Figure 3. Transient thermal impedance
Single - repetitive pulse
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Rectangular power pulse width (s)
1.E+01 single pulse
10%
20%
30%
40%
50%
60%
70%
80%
90%
AM09280V1
DS9247 - Rev 4 page 4/16
DS9247 - Rev 4
SD2931-12MR
Transient thermal impedance
Figure 4. Transient thermal impedance model
Dissi pa ted Powe r_Wa tts
R1
R=0.023 Ohm
C
C1
C=.0020978 F
R
R2
R=.072 Ohm
C
C2
C=.0021832 F
R
R3
R=.200 Ohm
C
C3
C=.0244758 F
R
R4
R=.155 Ohm
C
C4
C=.2057373 F
AM09281V1 page 5/16
SD2931-12MR
Typical performance
4
Typical performance
1000 0
Figure 5. Capacitance vs. drain voltage f =1MHz
100 0
Cis s
Cos s
100
10
0
Figure 7.
Crs s
10 20 30 40
VD S, DRAIN-S OURCE VOLTA GE (V)
50
Gate-source voltage vs. case temperature
T
C
, CASE TEMPERATURE (°C)
Figure 6. Drain current vs. gate voltage
20
15
10
5
VDS = 10 V
Tc=+25 °C
Tc=-20 °C
Tc=+80 °C
0
2 2.5
3 3.5
4 4.5
5
VGS, GATE-SOURCE VOLTAGE (V)
5.5
6
Figure 8. Maximum thermal resistance vs. case temperature
0.6
0.56
0.52
0.48
0.44
25 35 45 55 65
T
C
, CASE TEMPERATURE (°C)
75 85
Figure 9. Safe operating area
DS9247 - Rev 4 page 6/16
SD2931-12MR
Typical performance (175 MHz)
4.1 Typical performance (175 MHz)
Figure 10. Output power vs. input power
270
240
210
180
150
120
90
60
30
0
0
Vdd= 50V
Vdd= 40V
5 10 15
P
IN
, INPUT POWER (W) f= 175MHz
Idq= 250mA
20 25
Figure 11. Output power vs. input power at different Tc
270
240
210
180
150
120
90
60
30
0
0
Tc =-20 °C
Tc =+25 °C
Tc =+80 °C
5
Vdd= 50V
Idq= 250mA f= 175MHz
10 15
P
IN
, INPUT POWER (W)
20 25
Figure 12. Power gain vs. output power
18
16
14
12
10
8
6
0
Vdd=50V
Idq=250mA f=175Mhz
50 100 150
P
OUT
, INPUT POWER (W)
200 250
80
50
40
70
60
30
20
0
Figure 13. Efficiency vs. output power
50 10 0 15 0
P
OUT
, INPUT POWER (W)
Vdd=50V
Idq=250mA f=175Mhz
20 0 25 0
27 0
24 0
21 0
18 0
15 0
12 0
90
60
30
0
24
Figure 14. Output power vs. supply voltage
28 32 36 40
V
DD
, DRAIN VOLTAGE (V)
44
P in =10W
P in =5W
P in =2.5W
Idq= 250mA f= 175MHz
48 52
20
Figure 15. Drain current vs. gate-source voltage
Tc=-20 °C
Tc=+25 °C
15
10
5
Tc=+80 °C
0
2 2.5
3 3.5
4 4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
5 5.5
6
DS9247 - Rev 4 page 7/16
SD2931-12MR
Typical performance (175 MHz)
4.1.1
Test circuit (175 MHz)
Figure 16. 175 MHz test circuit schematic (production test circuit)
V
G
+50V
DS9247 - Rev 4
Component
T1
T2
FB1
FB2, FB3
FB4
L1
PCB
R1, R3
R2
R4
R5
C1, C11
C2
C3, C8, C9
C4
C5
C6
C7
C10
C12, C15
C13, C14,C16, C17
C18
Table 6. 175 MHz test circuit part list
Description
4:1 transformer, 25 Ω flexible coax .090 OD 6” long
1:4 transformer, 25 Ω semi-rigid coax .141 OD 6” long
Toroid X 2, 0.5” OD .312” ID 850 µ 2 turns
VK200
Shield bead, 1” OD 0.5” ID 850 µ 3 turns
1/4 wave choke, 50 Ω semi-rigid coax .141 OD 12” long
0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55
470 Ω 1 W chip resistor
360 Ω 1/2 W resistor
20 kΩ 10 turn potentiometer
560 Ω 1 W resistor
470 pF ATC chip cap
43 pF ATC chip cap
Arco 404, 12-65 pF
Arco 423, 16-100 pF
120 pF ATC chip cap
0.01 µF ATC chip cap
30 pF ATC chip cap
91 pF ATC chip cap
1200 pF ATC chip cap
0.01 µF / 500 V chip cap
10 µF 63 V electrolytic capacitor page 8/16
Figure 17. 175 MHz test circuit photomaster
SD2931-12MR
Typical performance (175 MHz)
Figure 18. 175 MHz test circuit
DS9247 - Rev 4 page 9/16
SD2931-12MR
Typical performance (30 MHz)
4.2
25 0
Typical performance (30 MHz)
Figure 19. Output power vs. input power
V d d = 5 0 V
20 0
15 0
10 0
5 0
Vdd = 4 0 V
0
0 0 .1
0 .2
P in ( W )
0 .3
f = 30 M H z
ID Q = 2 50 m A
0 .4
0 .5
5 0
4 0
3 0
2 0
1 0
0
0
Figure 21. Efficiency vs. output power
7 0
6 0
4 0 8 0 1 2 0
P o u t (W ) f = 3 0 M H z
V D D = 50 V
ID Q = 2 5 0 m A
1 6 0 20 0
2 8
2 7
3 0
2 9
2 6
2 5
2 4
0
Figure 20. Power gain vs. output power
4 0 8 0 12 0
P ou t (W ) f = 30 M H z
V D D = 50 V
ID Q = 250 m A
16 0 20 0
Figure 22. Output power vs. supply voltage
2 0 0
1 8 0
1 6 0
1 4 0
1 2 0
1 0 0
8 0
6 0
4 0
2 0
0
2 4 2 8 3 2
P in = 0 .3 1 W
P in = 0 .22 W
P in = 0 .1 3 W
3 6
Vd d (V)
4 0 f = 3 0 M H z
ID Q = 25 0 m A
4 4 4 8 5 2
Figure 23. Output power vs. gate-source voltage
18 0
16 0
14 0
12 0
10 0
8 0
6 0
4 0
2 0
0
0 1 2 3
V G S (V )
T = + 25 ° C
T = - 2 0 ° C
T = + 80 ° C
V D D = 50 V
ID Q = 25 0 m A f = 30 M H z
P in = C o n s tan t
4 5 6
DS9247 - Rev 4 page 10/16
SD2931-12MR
Typical performance (30 MHz)
4.2.1
Test circuit (30 MHz)
Figure 24. 30 MHz test circuit schematic (production test circuit)
V
G +
+50V
Component
T1
T2
FB1
FB2
FB3
RFC1
PCB
R1, R3
R2
C1, C4, C6, C7, C8, C9, C11,
C12,C13
C2, C3
C5
C10
C14
Table 7. 30 MHz test circuit part list
Description
9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15” long
1:4 transformer, 50 Ω flexible coax .225 OD 15” long
Toroid 1.7” OD .30” ID 220 µ 4 turns
Surface mount EMI shield bead
Toroid 1.7” OD .300” ID 220 µ 3 turns
Toroid 0.5” OD 0.30” ID 125 µ 4 turns 12 awg wire
0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55
1 kohm 1 W chip resistor
680 ohm 3 W wirewound resistor
0.1 μF ATC chip cap
750 pF ATC chip cap
470 pF ATC chip cap
10 μF 63 V electrolytic capacitor
100 μF 63 V electrolytic capacitor
DS9247 - Rev 4 page 11/16
5
SD2931-12MR
Marking, packing and shipping specifications
Marking, packing and shipping specifications
Order code
SD2931-12MR
Table 8. Packing and shipping specifications
Packing
Plastic tray
Pieces per tray
25
Dry pack humidity
< 10%
V
GS
and G
FS code
Not mixed
Lot code
Not mixed
Figure 25. SD2931-12MR marking layout
GFS code
SD2931-11MR
Symbol
X
CZ xxx
VY
MAR
CZ y yy
Table 9. Marking specifications
Description
V
GS
and G
FS
sort
Assembly plant
Last 3 digits of diffusion lot
Diffusion plant
Country of origin
Test and finishing plant
Assembly year
Assembly week
DS9247 - Rev 4 page 12/16
6
6.1
SD2931-12MR
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
M174MR package information
Figure 26. M174MR package outline
2xøM
4xA
2x C
2x B
.100/2.54
x45°
Dim.
I
J
K
G
H
L
M
C
D
E
F
A
B
4xH
PIN 5
(THERMAL BASE)
4X
SEATING PLANED
8410504 rev. A
24.64
12.07
0.08
2.11
3.81
Min.
5.56
Table 10. M174 package mechanical data mm
Typ.
3.18
6.22
18.28
3.18
25.53
3.05
Max.
5.584
6.48
18.54
24.89
12.83
0.18
3.00
4.45
8.00
26.67
3.30
DS9247 - Rev 4 page 13/16
SD2931-12MR
Revision history
Date
20-Feb-2013
10-Sep-2013
11-Nov-2016
07-Feb-2018
Revision
1
2
3
4
Table 11. Document revision history
Changes
Initial release
Document promoted from preliminary data to full datasheet.
Formatting and minor text changes.
Updated Table 2: "Absolute maximum ratings" .
Updated marking in cover page and Figure 25. SD2931-12MR marking layout .
Minor text changes.
DS9247 - Rev 4 page 14/16
SD2931-12MR
Contents
Contents
DS9247 - Rev 4 page 15/16
SD2931-12MR
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DS9247 - Rev 4 page 16/16
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