RF2L15200CB4
Datasheet
200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor
5
4
LBB
1
3
4
5
Pin
1
2
Pin connection
Connection
Drain A
Drain B
Source (bottom side)
Gate B
Gate A
2
3
Features
Order code
RF2L15200CB4
Frequency
860 MHz
V
DD
28 V
P
OUT
200 W
Gain
17.5 dB
Efficiency
72%
• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate-source voltage range for improved class C operation
• Excellent thermal stability, low HCI drift
• In compliance with the european directive 2002/95/EC
Applications
• Broadband commercial communications
• TV broadcast
• Avioncs
• Industrial
Description
The RF2L15200CB4 is a 200 W LDMOS FET, designed for wideband communication and ISM applications with frequencies from HF to 1.5 GHz. It can be used in class
AB, B or C for all typical modulation formats.
Product status link
RF2L15200CB4
Product summary
Order code RF2L15200CB4
Marking
Package
2L15200
LBB
Packing
Base/bulk quantity
Tape and reel 13"
100/100
DS13389 - Rev 2 - April 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
RF2L15200CB4
Electrical ratings
Electrical ratings
Symbol
V
(BR)DSS
V
GS
V
DD
T
J
T
STG
Table 1. Absolute maximum ratings (T
C
= 25 °C)
Parameter
Drain-source voltage
Gate-source voltage
Maximum operating voltage
Maximum junction temperature
Storage temperature range
Table 2. Thermal data
Symbol
R thJC
(1)
1. T
C
= +85 °C , T
J
= +200 °C, DC test.
Parameter
Thermal resistance, junction-to-case
Symbol
HBM
CDM
Table 3. ESD protection
Test methodology
Human body model (according to ANSI/ESDA/JEDEC JS001-2017)
Charge device model (according to ANSI/ESDA/JEDEC JS-002-2014)
Value
65
-6 to 10
32
+200
-65 to +150
V
°C
°C
Unit
V
V
Value
0.35
Unit
°C/W
Class
1C
C3
DS13389 - Rev 2 page 2/13
2
Note:
RF2L15200CB4
Electrical characteristics
Electrical characteristics
T
C
= 25°C unless otherwise specified.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS(Q)
V
DS(on)
I
DS(on)
R
DS(on)
C
ISS
C
RSS
C
OSS
Table 4. Static
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
DS
= 500 µA
Zero gate voltage drain leakage current
V
GS
= 0 V, V
DS
= 28 V
V
GS
= 0 V, V
DS
= 50 V
Gate-source leakage current
Gate threshold voltage
V
GS
=-6/10 V, V
DS
=0 V
V
DS
= 28 V, I
DS
= 600 µA
Gate quiescent voltage
Static drain-source on-voltage
Static drain-source on-current
Drain-source on-state resistance
V
DS
= 1 V, I
DS
= 220 mA
V
GS
= 10 V, I
DS
= 820 mA
V
GS
= 10 V, I
DS
= 2.5 A
V
GS
= 10 V, V
DS
= 100 mV
V
GS
= 10 V, I
DS
= 820 mA
V
GS
= 10 V, I
DS
= 2.5 A
Common source input capacitance
Common source feedback capacitance
Common source output capacitance
V
GS
= 0 V, V
DD
= 28 V, f = 1 MHz
Symbol f
P
OUT
G
PS
η
D
VSWR
Parameter
Frequency
Output power
Power gain
Drain efficiency
Load mismatch
V
DD
= 28 V, I
DQ
= 100 mA.
1.75
2
50
200
Min.
65
Typ.
Max.
Unit
V
1
±100
2.5
4
150
365
2.5
1
μA nA
V
V mV
A
Ω
92
1.6
39 pF
Table 5. Dynamic
Test conditions f = 860 MHz, at 3dB compression point, CW test signal
At 200 W output power, all phase angles
Min.
-
-
-
-
-
Typ.
Max.
1500
200
17.5
72
10:1
Unit
MHz
W dB
%
DS13389 - Rev 2 page 3/13
3
Note:
RF2L15200CB4
Typical performances
Typical performances
21
20
19
18
17
16
0
Table 6. Output power, power gain and drain efficiency vs input power (f= 860 MHz, CW)
P
IN
(dBm)
22.9
24.0
25.0
26.0
27.0
28.1
29.2
30.2
31.4
32.5
33.6
34.7
35.3
35.8
P
OUT
(dBm)
41.9
43.3
44.6
45.8
47.1
48.4
49.6
50.7
51.8
52.4
52.8
53.0
53.0
53.0
P
OUT
(W)
15.6
21.2
28.5
38.1
50.8
69.3
91.7
118.6
150.3
174.8
189.5
197.4
199.1
199.4
5.4
6.2
7.1
8.1
8.8
I
DS
(A)
2.5
3.0
3.4
4.0
4.6
9.3
9.8
9.9
9.9
G
PS
(dB)
19.0
19.3
19.6
19.8
20.1
20.3
20.4
20.5
20.4
19.9
19.1
18.2
17.7
17.2
45.9
52.7
59.6
66.5
70.9
ƞ
D
(%)
22.1
25.7
29.7
34.2
39.4
73.0
72.3
72.0
72.2
Figure 1. Power gain and drain efficiency versus output power (f = 860 MHz, CW)
22 90
20 40
G
PS
60 80
η
D
100 120
Output power (W)
140 160 180 200
45
220
0
30
15
75
60
V
DD
= 50 V, I
DQ
=100 mA.
DS13389 - Rev 2 page 4/13
Note:
RF2L15200CB4
Typical performances
21
20
19
18
17
16
0
Table 7. Output power, power gain and drain efficiency vs input power (f= 860 MHz, pulsed CW)
P
IN
(dBm)
42.0
43.3
44.7
46.0
47.2
48.7
49.9
51.0
52.0
52.5
52.8
52.9
53.0
P
OUT
(dBm)
34.2
34.9
35.6
36.2
36.8
37.6
38.2
38.8
39.3
39.6
39.8
40.0
40.1
P
OUT
(W)
16.0
21.6
29.5
39.5
52.5
73.5
96.6
126.3
158.5
179.8
190.6
195.7
197.8
4.8
5.7
6.6
7.5
8.5
I
DS
(A)
2.6
3.1
3.6
4.2
9.1
9.6
10.1
10.3
G
PS
(dB)
18.8
19.1
19.5
19.7
20.0
20.2
20.4
20.5
20.3
19.7
18.9
17.9
17.4
38.9
46.0
52.7
60.1
66.8
ƞ
D
(%)
21.7
25.1
29.4
33.8
70.6
71.1
69.2
68.3
Figure 2. Power gain and drain efficiency versus output power (f = 860 MHz, pulsed CW)
22 90
20 40
G
PS
60
η
D
80 100 120
Output power (W)
140 160 180 200
15
220
0
45
30
75
60
V
DD
= 28 V, I
DQ
= 100 mA pulsed CW; pulse width = 100 μs, duty cycle = 10%.
DS13389 - Rev 2 page 5/13
4
Test circuits
Figure 3. Test circuit layout (f = 860 MHz)
RF2L15200CB4
Test circuits
Figure 4. Test circuit photo (f = 860 MHz)
GADG250620201154SA
DS13389 - Rev 2
GADG250620201201SA page 6/13
RF2L15200CB4
Test circuits
Table 8. Components list
Component
C1, C2, C3, C13, C14, C15, C17, C18, C21, C22, C26,
C27
C5
C6
C7
C12
C8, C9, C10, C28
C16, C19, C20, C23
R1, R2
R4, R5
L1, L2
C24, C25
PCB
Value
120 pF
Reference/suggested manufacturer
ATC800B
6.8 pF
5.6 pF
10 pF
3.3 pF
ATC800B
ATC800B
ATC800B
ATC800B
8.2 pF
10 μF
200 Ω
13 Ω
ATC800B
100V, ceramic multilayer capacitor
Metal film resistor
1206 chip resistor
Copper wire, cross section diameter 0.8 mm
470 μF Electrolytic capacitor, 63 V
0.762 mm [0.030"] thick, Ɛr= 3.48, Rogers RO4350B, 1 oz. copper
DS13389 - Rev 2 page 7/13
5
5.1
RF2L15200CB4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
LBB package information
Figure 5. LBB package outline
N Ex4
A
B
C
M
G
S
L I H
F
CH2 x 45°
R2 x 4
D
R1 x 2
CH1 x 45°
T
S R
P
Q
DM00666717_2
DS13389 - Rev 2 page 8/13
DS13389 - Rev 2
Symbol
P
Q
R
S
T
CH1
CH2
R1
R2
H
I
L
M
N
A
B
C
E
F
Min.
28.82
22.73
16.87
5.32
1.01
5.72
5.72
17.65
1.02
4.72
16.38
1.37
1.97
Table 9. LBB mechanical data
Millimeters
Typ.
4.85
16.51
1.50
2.10
6.60
2.72
1.02
1.65
0.50
5.85
5.85
17.78
1.15
0.10
28.95
22.86
17.00
5.45
1.14
RF2L15200CB4
LBB package information
Max.
29.08
22.99
17.13
5.58
1.27
5.98
5.98
17.91
1.28
4.98
16.64
1.63
2.23
page 9/13
6
RF2L15200CB4
Marking information
Marking information
PACKAGE FACE : TOP
C
E
D
A B
F G H
Figure 6. Marking composition
LEGEND
Unmarkable Surface
Marking Composition Field
A - STANDARD ST LOGO
B - ECO level
(e4)
C
D
- MARKING AREA
- ADDITIONAL
INFORMATION
(MAX CHAR ALLOWED = 7)
E - COUNTRY OF ORIGIN
(MAX CHAR ALLOWED = 3)
F - Assy Plant
(PP)
G - Assy Year
(Y)
H - Assy Week
(WW)
GADG040220211644GT
DS13389 - Rev 2 page 10/13
RF2L15200CB4
Revision history
Date
01-Jul-2020
15-Apr-2021 2
Table 10. Document revision history
Version
1
Changes
First release.
Modified gain, efficiency and marking values on cover page.
Modified Table 1. Absolute maximum ratings (T
C
= 25 °C)
,
Table 3. ESD protection
, Table 4. Static and Table 5. Dynamic
.
Modified Figure 1. Power gain and drain efficiency versus output power (f =
860 MHz, CW)
and Figure 2. Power gain and drain efficiency versus output power (f = 860 MHz, pulsed CW)
.
Modified the entire
Section 4 Test circuits
.
Added
Section 6 Marking information
.
Minor text changes.
DS13389 - Rev 2 page 11/13
RF2L15200CB4
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
3 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
4 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
5.1
LBB package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
DS13389 - Rev 2 page 12/13
RF2L15200CB4
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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© 2021 STMicroelectronics – All rights reserved
DS13389 - Rev 2 page 13/13
