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IMP23ABSU
Datasheet
High-performance MEMS microphone with extended frequency response up to
80 kHz for ultrasound applications
Product status link
IMP23ABSU
Product summary
Order code IMP23ABSU IMP23ABSUTR
Temp. range
[°C]
Package
Packing
-40 to +85
(3.5 x 2.65 x 0.98) mm
Tray Tape and reel
Product label
Features
• Single supply voltage operation 1.52 V - 3.6 V
• Omnidirectional sensitivity
• High signal-to-noise ratio
• High acoustic overload point: 130 dBSPL typ.
• Package compliant with reflow soldering
• Enhanced RF immunity
• Ultra-flat frequency response
• Ultrasound bandwidth (up to 80 kHz)
• Low latency
• Ultra-low-power: 150 µA max.
• ECOPACK, RoHS, and “Green” compliant
Applications
• Condition monitoring of industrial equipment
• Leak detection
• Electrical arcing
• Smart medical instruments
• Wearable devices
• Hearables
• Smart speakers
• Active noise-canceling headsets
Description
The IMP23ABSU is a compact, low-power microphone built with a capacitive sensing element and an IC interface.
The sensing element, capable of detecting acoustic waves, is manufactured using a specialized silicon micromachining process to produce audio sensors.
The IMP23ABSU has an acoustic overload point of 130 dBSPL with a typical 64 dB signal-to-noise ratio.
The sensitivity of the IMP23ABSU is -38 dBV ±1 dB @ 94 dBSPL, 1 kHz.
The IMP23ABSU is available in a package compliant with reflow soldering and is guaranteed to operate over an extended temperature range from -40 °C to +85 °C.
DS13376 - Rev 2 - September 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
Pin description
Figure 1. Pin connections (bottom view)
IMP23ABSU
Pin description
Pin number
1
2
3
4
5
Table 1. Pin description
Pin name
Out
GND
GND
GND
Vdd
Output
GND
GND
GND
Supply voltage
Function
DS13376 - Rev 2 page 2/15
2
2.1
IMP23ABSU
Acoustic and electrical specifications
Acoustic and electrical specifications
Acoustic and electrical characteristics
The values listed in the table below are specified for Vdd = 2.75 V, no load, Tamb = 25 °C unless otherwise specified.
Table 2. Acoustic and electrical characteristics
Test condition Symbol
Vdd
Idd
So
SNR
PSRR
AOP
Rload
Top
Parameter
Supply voltage
Current consumption
Sensitivity
Signal-to-noise ratio
Power supply rejection
Acoustic overload point
Load resistance
Operating temperature range
1. Guaranteed by design
1 kHz @ 94 dBSPL
100 mVpp sine wave, 1 kHz, Vdd > 1.6 V
Min.
Typ.
1.52
2.75
-39
120
-38
64
60
130
15
-40
Max.
3.6
150
-37
+85
Unit
V
µA dBV dB(A) dB dBSPL kΩ
°C
DS13376 - Rev 2 page 3/15
2.2
IMP23ABSU
Frequency response
Frequency response
Figure 2. Typical free-field frequency response normalized at 1 kHz
0
-2
-4
-6
-8
-10
10
10
8
6
4
2
100
Frequency (Hz)
1000 10000
Frequency (Hz)
35
100
900
1000
1100
8000
15000
Table 3. Frequency response mask
-1
0
-1
-1
0
LSL
-2
-1.5
1
0
1
4
9
USL
0
0.5
Unit dBr 1kHz dBr 1kHz dBr 1kHz dBr 1kHz dBr 1kHz dBr 1kHz dBr 1kHz
10
5
0
-5
-10
20
15
-15
20000
Figure 3. Typical ultrasonic free-field response normalized to 1 kHz
30000 40000 50000
Frequency [Hz]
60000 70000 80000
DS13376 - Rev 2 page 4/15
3
IMP23ABSU
Absolute maximum ratings
Absolute maximum ratings
Stresses above those listed as “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
Symbol
Vdd
T
STG
Table 4. Absolute maximum ratings
Ratings
Supply voltage
Storage temperature range
Maximum value
-0.5 to 4.8
-40 to +125
Unit
V
°C
This device is sensitive to mechanical shock, improper handling can cause permanent damage to the part.
This device is sensitive to electrostatic discharge (ESD), improper handling can cause permanent damage to the part.
DS13376 - Rev 2 page 5/15
4
4.1
IMP23ABSU
Application recommendations
Application recommendations
IMP23ABSU schematic hints
Figure 4. IMP23ABSU electrical connections and external component values
DS13376 - Rev 2 page 6/15
5
IMP23ABSU
Soldering information
Soldering information
T
P
T
L
Figure 5. Recommended soldering profile limits t p
RAMP-UP
CRITICAL ZONE
T
L to T
P
T
SMAX t
L
T
SMIN ts
PREHEAT
RAMP-DOWN
T25°C to PEAK
TIME
30 60 90 120 150 180 210 240 270 300 330 360 390
Table 5. Recommended soldering profile limits
Description
Average ramp rate
Preheat
Minimum temperature
Maximum temperature
Time (T
SMIN
to T
SMAX
)
Ramp-up rate
Time maintained above liquidus temperature
Liquidus temperature
Peak temperature
Time within 5 °C of actual peak temperature
Ramp-down rate
Time 25 °C (t25 °C) to peak temperature
Parameter
T
L
to T
P
T
SMIN
T
SMAX t
S
T
SMAX
to T
L t
L
T
L
T
P
Pb free
3 °C/sec max
150 °C
200 °C
60 sec to 120 sec
60 sec to 150 sec
217 °C
260 °C max
20 sec to 40 sec
6 °C/sec max
8 minutes max
DS13376 - Rev 2 page 7/15
IMP23ABSU
Reliability tests
6
Reliability tests
Test name
Electrostatic Discharge Immunity Test
(ESD)
Latch-Up
(LU)
High Temperature Operative Life
(HTOL)
Temperature Humidity Bias
(THB)
Preconditioning MSL3
(PC)
Low Temperature Storage
(LTS)
High Temperature Storage
(HTS)
Temperature Cycling
(TC)
Temperature Humidity Storage
(THS)
Table 6. Reliability specifications
To classify ESD susceptibility the device is submitted to a high voltage peak on all his pins, simulating ESD stress according to different simulation models (GUN, HBM, MM,
CDM)
Description Conditions
ESD-GUN: 25 discharges at ±8 kV, direct contact to housing of MIC
Reference specification IEC 61000-4-2
ESD-HBM 3 discharges up to ±2 kV pin-to-pin
Reference specification ANSI/ESDA/JEDEC
JS001
ESD-MM, 3 discharges up to ±200 V pin-topin
Reference specification JEDEC JESD22-
A115C
ESD-CDM, 3 discharges up to ±750 V
Reference specification ANSI/ESDA/JEDEC
JS002
To verify latch-up immunity the device is submitted to a current injection on I/O or supply overvoltage
±100 mA & 1.5 x Vdd @ 85 °C
Reference specification JEDEC JESD78
To simulate the worst-case application stress conditions, the device is stressed in dynamic configuration at operative max. absolute ratings
To investigate failure mechanisms activated by electrical field and humidity, the device is biased in static or dynamic operative conditions at controlled high temperature and relative humidity
To investigate effects of customer manufacturing soldering enhanced by package water absorption, the device is submitted to typical temperature profile after controlled moisture absorption
Ta 125 °C, Tj 125 °C, 1000 Hrs, @ Max Op
Voltage
Preconditioning (PC) before
Reference specification JESD22-A108
Ta 85°C, R.H. 85%, 1000 Hrs, @ Max Op
Voltage
Preconditioning (PC) before
Reference specification JESD22-A101
MSL3 as moisture soak conditions followed by n.3 reflow @ Tpeak 260 °C
Reference specification JEDEC J-STD-020
To investigate the failure mechanisms activated by extremely cold conditions, the device is stored in unbiased condition at the min. temperature allowed by the package materials
To investigate the failure mechanisms activated by high temperature, the device is stored in unbiased condition at the maximum temperature allowed by the package materials
To investigate failure modes related to thermo-mechanical stress, the device is submitted to cycled temperature excursions, between a hot and a cold chamber in air atmosphere
Ta = -40 °C, 1000 Hrs
Reference specification JESD22-A120
Ta = 125 °C, 1000 Hrs
Reference specification JESD22-A104
Low T = - 40 °C, High T = +125 °C, 1000 Cys
Preconditioning (PC) before
Reference specification JESD22-A105
To investigate degradations induced by wet conditions, the device is stored at controlled high temperature and relative humidity
Ta = 85°C, R.H. = 85%, 1000Hrs
Preconditioning (PC) before
Reference specification JESD22-A102
DS13376 - Rev 2 page 8/15
IMP23ABSU
Reliability tests
Test name
Random Free-Fall on PCB
(TUMBLE)
Guided Free-Fall on PCB
(GFF)
Compressed Air Test
(CAT)
Mechanical Shock
(MS)
Variable Frequency Vibration
(VB)
Description
To investigate durability to mechanical repeated drops without any preferential impact direction simulating drop effect on handheld devices
Conditions
Microphone soldered on PCB which is mounted on a specific jig
Random drop from 1 mt on steel base, 300 drops
Reference specification IEC 60068-2-32
To verify durability of the whole device to mechanical shocks, done by controlling height and impact direction simulating drop effect on handheld devices
Microphone soldered on PCB which is mounted on a specific jig
Guided drop from 1.5 mt on marble base,
2 drops x 6 directions
Reference specification IEC 60068-2-32
Test dedicated on the MEMS Microphone to check mechanical robustness of sensor membrane alone
Microphone membrane is subjected to repeated air pulses controlled on duration, rise and fall time and amplitude.
Amplitude is varied with increasing steps.
ST internal specification
To verify mechanical robustness of internal structural elements (MEMS, package components) to withstand severe shocks produced by handling, transportation or field operations
Five pulses of 10,000 g in each of six directions with duration time 0.2 ms
Reference specification MIL 883, Method
2002.5
The vibration variable frequency test is performed to determine the effect of vibration, within a specified frequency range, on the internal structural elements
Peak acceleration of 20 g, from 20 Hz to 2000
Hz in three perpendicular directions
Reference specification MIL 883, Method
2007.3-A
DS13376 - Rev 2 page 9/15
7
7.1
IMP23ABSU
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
RHLGA-5L package information
Figure 6. RHLGA metal cap 5-lead (3.5 x 2.65 x 0.98 mm) package outline and mechanical data
DS13376 - Rev 2
ITEM
L e n g t
W i d t h h
[
[ L ]
W ]
H e i g h t [ H ]
Dimensions are in millimeter unless otherwise specified
General Tolerance is +/-0.15mm unless otherwise specified
OUTER DIMENSIONS
DIMENSION [mm]
3 .
5
1 .
2 .
6 5
0 8 M A X
TOLERANCE [mm]
± 0 .
1
± 0 .
1
DM00368430_2 page 10/15
7.2
IMP23ABSU
Land pattern
Land pattern
Figure 7. Land pattern and recommended stencil opening
Land pattern
0.838
1.675
0.725
0.725
Stencil opening
0.640
1.675
0.640
0.522
0.522
1.364
0.822
0.460
0.460
1.252
2.074
0.710
φ 1.625
φ 0.5
φ 1.025
φ
1.625
φ
1.025
0.300
DS13376 - Rev 2 page 11/15
7.3
IMP23ABSU
RHLGA-5L packing information
RHLGA-5L packing information
Figure 8. Carrier tape information for RHLGA-5L package
DS13376 - Rev 2 page 12/15
Revision history
Date
31-Aug-2020
16-Sep-2020
Version
1
2
Table 7. Document revision history
Changes
Initial release
Minor textual update
IMP23ABSU
DS13376 - Rev 2 page 13/15
IMP23ABSU
Contents
Contents
DS13376 - Rev 2 page 14/15
IMP23ABSU
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS13376 - Rev 2 page 15/15
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