MP23AB01DH
High-performance MEMS audio sensor: fully differential analog bottom-port microphone
Datasheet - production data
Features
•
Single supply voltage operation
•
Fully differential output
•
Omnidirectional sensitivity
•
High signal-to-noise ratio
•
High bandwidth
•
Package compliant with reflow soldering
•
High RF immunity
•
ECOPACK ® , RoHS, and “Green” compliant
Description
The MP23AB01DH is a compact, low-power microphone built with a capacitive sensing element and an IC interface.
The sensing element, capable of detecting acoustic waves, is manufactured using a specialized silicon micromachining process to produce audio sensors.
The MP23AB01DH has sensitivity of 38 dB
±1 dB, an acoustic overload point of 135 dBSPL with minimum 65 dB signal-to-noise ratio.
The MP23AB01DH has fully differential output in order to minimize common mode noise.
The MP23AB01DH is available in a package compliant with reflow soldering and is guaranteed to operate over an extended temperature range from -40 °C to +85 °C.
Order code
Table 1: Device summary
Temp. range
(°C)
Package Packing
MP23AB01DH -40 to +85
MP23AB01DHTR -40 to +85
(3.35 x 2.5 x 0.98) mm
(3.35 x 2.5 x 0.98) mm
Tray
Tape and reel
August 2017 DocID030017 Rev 2
This is information on a product in full production.
1/12 www.st.com
Contents
Contents
MP23AB01DH
1 Pin description ................................................................................ 3
2 Acoustic and electrical specifications ........................................... 4
2.1
2.2
Acoustic and electrical characteristics ............................................... 4
Frequency response ......................................................................... 5
3 Absolute maximum ratings ............................................................. 6
4 Application recommendations ....................................................... 7
4.1
MP23AB01DH schematic hints ......................................................... 7
5 Package information ....................................................................... 8
5.1
5.2
Soldering information ........................................................................ 8
RHLGA 4-lead package information .................................................. 9
6 Reliability tests .............................................................................. 10
7 Revision history ............................................................................ 11
2/12 DocID030017 Rev 2
MP23AB01DH
1 Pin description
Figure 1: Pin connections
1 2 3
Pin description
4
Pin number
1
2
3
4
Table 2: Pin description
Pin name
Vdd
Output–
Output+
Ground
Power supply
Function
Negative output signal
Positive output signal
Ground
DocID030017 Rev 2 3/12
Acoustic and electrical specifications
2
2.1
Acoustic and electrical specifications
MP23AB01DH
Acoustic and electrical characteristics
The values listed in the table below are specified for Vdd = 2.7 V, No Load, Tamb = 25 °C unless otherwise specified.
Symbol
Table 3: Acoustic and electrical characteristics
Parameter Test condition Min.
Typ. (1)
Max. Unit
Vdd
Idd
So
Supply voltage
Current consumption
Sensitivity
SNR Signal-to-noise ratio
PSR Power supply rejection
@1 kHz
(0 dB = 1 V/Pa)
A-weighted
(20 Hz - 20 kHz)
100 mVpp sine wave @217 Hz
2.3
-39
65
2.7
-38
-100
3.6
250
-37
V
µA dBV dB(A) dB
AOP Acoustic overload point
Zout Output impedance
Cload Load capacitance
Rload Load resistance
Top Operating temperature range
30
-40
135
400
150
+85
Notes:
(1)
Typical specifications are not guaranteed.
Table 4: Typical distortion specifications at 1 kHz sine wave input
Parameter Test condition Typ. value dBSPL
Ω pF
κΩ
°C
THD+N
94 dBSPL
110 dBSPL
120 dBSPL
130 dBSPL
< 0.2%
< 0.5%
< 3%
< 5%
4/12 DocID030017 Rev 2
MP23AB01DH
2.2 Frequency response
Acoustic and electrical specifications
Figure 2: Typical free-field frequency response normalized at 1 kHz
DocID030017 Rev 2 5/12
Absolute maximum ratings
3 Absolute maximum ratings
MP23AB01DH
Stresses above those listed as “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
Table 5: Absolute maximum ratings
Symbol Ratings
Maximum value
Unit
Vdd Supply voltage
T
STG
Storage temperature range
ESD (HBM) ANSI/ESDA/JEDEC JS001
ESD (MM) EIA/JESD22-A115
ESD (CDM) JESD22-C101
ESD (1)
Per IEC61000-4-
2, 3 discharges, 150 pF, 330 Ω direct contact to housing. MIC must be at zero potential before each discharge.
-0.5 to 4.8 V
-40 to +105 °C
±2000 V
±200
±750
V
V
±8000 V
Notes:
(1)
Bypass capacitor 200 nF or 1 µF (better), is definitely recommended for ESD main clamp integrity.
6/12 DocID030017 Rev 2
MP23AB01DH
4
4.1
Application recommendations
Application recommendations
MP23AB01DH schematic hints
Figure 3: MP23AB01DH electrical connections and external component values
Vdd
C1
Typical Values
C1 = 100 nF
C2 = 1 µF
Pin 1
Vdd
Output +
Pin 3
C2
MP23AB01DH
GND
Output -
Pin 4
(Ground)
Pin 2
DocID030017 Rev 2 7/12
Package information
5
5.1
Package information
MP23AB01DH
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Soldering information
Figure 4: Recommended soldering profile limits t p
T
P
RAMP-UP CRITICAL ZONE
T
L to T
P
T
L
T
SMAX t
L
T
SMIN t s
PREHEAT
RAMP-DOWN
T25° to PEAK
TIME
30 60 90 120 150 180 210 240 270 300 330 360 390
Average ramp rate
Preheat
Table 6: Recommended soldering profile limits
Description Parameter
T
L
to T
P
Pb free
3 °C/sec max
Minimum temperature
Maximum temperature
Time (T
SMIN
to T
SMAX
)
T
SMIN
T
SMAX t
S
150 °C
200 °C
60 sec to 120 sec
Ramp-up rate
Time maintained above liquidus temperature Liquidus temperature
Peak temperature
Time within 5 °C of actual peak temperature
Ramp-down rate
Time 25 °C (t = 25 °C) to peak temperature
T
SMAX
to T
L t
L
T
L
T
P
60 sec to 150 sec
217 °C
260 °C max
20 sec to 40 sec
6 °C/sec max
8 minutes max
8/12 DocID030017 Rev 2
MP23AB01DH
5.2 RHLGA 4-lead package information
Package information
Figure 5: RHLGA metal cap 4-lead (3.35 x 2.5 x 0.98 mm) package outline and mechanical dimensions
Dimensions are in millimeter unless otherwise specified
General Tolerance is +/-0.15mm unless otherwise specified
OUTER DIMENSIONS
L e
ITEM n g t h [ L ]
W i d t h
H e i g h t
[ W ]
[ H ]
S o u n d p o r t [ A P ]
DIMENSION [mm]
3 .
3 5
2 .
5
0 .
9 8
Ø 0 .
3 5
TOLERANCE [mm]
± 0 .
1
± 0 .
1
± 0 .
1
± 0 .
0 5
8573114_2
DocID030017 Rev 2 9/12
Reliability tests MP23AB01DH
6 Reliability tests
The device passed all reliability tests on three different assembly lots under the following conditions given in the table below.
Test name
Table 7: Tests and summary of results
Description Conditions
HTOL: High Temperature
Operating Life
The device is stressed in dynamic configuration, approaching the operative max. absolute ratings in terms of junction temperature, load current, internal power dissipation.
Vdd(max) = 3.6 V;
Tamb = 125 °C
JESD22a108
HTS: High Temperature Storage
PC (JL3): Preconditioning (solder simulation)
The device is stored in an unbiased condition at the maximum temperature allowed by the package materials, sometimes higher than the maximum operative temperature.
The device is submitted to a typical temperature profile used for surface mounting, after controlled moisture absorption
Ta = 125 °C
JESD22a103
TC: Temperature Cycling
ESD (HBM): Electrostatic
Discharge (Human Body Model)
ESD (MM): Electrostatic
Discharge (Machine Model )
The device is submitted to cycled temperature excursions, between a hot and a cold chamber in air atmosphere
The device is submitted to a high voltage peak on all his pins simulating
ESD stress according to different simulation models.
Ta Cycling: -40 °C ±125 °C
JESD22a104
Voltage ±2000 V
JEDEC / JESD22-A114E
Voltage ±200 V
JEDEC/JESD-A115-A
ESD (CDM): Electrostatic
Discharge (Charged Device
Model)
Voltage ±750 V
ANSI / ESD STM 5.3.1 ESDA
LU (CI): Latch-up (Overvoltage and Current Injection)
The device is submitted to a direct current forced/sunk into the input/output pins. Removing the direct current, no change in the supply current must be observed.
THB: Temperature Humidity Bias
The device is biased in static configuration minimizing its internal power dissipation, and stored at controlled conditions for ambient temperature and relative humidity.
Current injection ±200 mA
Overvoltage 1.5 x Vmax
EIA/JESD78
Vdd(nom) = 2.7 V
T = 85 °C / RH = 85%
JESD22a108
LTS: Low Temperature Storage
The device is stored in an unbiased condition at the min. temperature allowed by the package materials, sometimes lower than the min. op. temp
Ta = -40 °C
JESD22a119
MS: Mechanical Shock
The device is submitted to 10000 g / 0.1 ms
5 shocks for each axis.
10000 g / 0.1 ms
5 shocks for each axis, under bias
MIL STD 883MIL
10/12 DocID030017 Rev 2
MP23AB01DH
7
Revision history
Revision history
Date Revision
Table 8: Document revision history
Changes
17-Nov-2016
31-Aug-2017
1
2
Initial release
Updated Figure 3: "MP23AB01DH electrical connections and external component values"
DocID030017 Rev 2 11/12
MP23AB01DH
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12/12 DocID030017 Rev 2
