STMicroelectronics STD11N65M2 Datasheet
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STD11N65M2, STP11N65M2, STU11N65M2
Datasheet
N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2
Power MOSFET in DPAK, TO-220 and IPAK packages
TAB
DPAK 1
3
TAB
TAB
TO-220
1
2
3
IPAK
1
2
3
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Features
Order code V
DS
R
DS(on)
max.
I
D
STD11N65M2
STP11N65M2 650 V 0.68 Ω
STU11N65M2
• Extremely low gate charge
• Excellent output capacitance (C
OSS
) profile
• 100% avalanche tested
• Zener-protected
7 A
Applications
• Switching applications
P
TOT
85 W
Package
DPAK
TO-220
IPAK
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Product status link
STD11N65M2
STP11N65M2
STU11N65M2
DS10348 - Rev 6 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STD11N65M2, STP11N65M2, STU11N65M2
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
I
GS
D
Parameter
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
I
DM
P
TOT
T stg
T j
Drain current (pulsed)
Total power dissipation at T case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width limited by T jmax
.
2. I
SD
≤ 7 A, di/dt ≤ 400 A/μs, V
DS
(peak) ≤ V
(BR)DSS
, V
DS
= 400 V
3. V
DS
≤ 520 V.
Table 2. Thermal data
Symbol Parameter
R thj-case
R thj-amb
R thj-pcb
Thermal resistance junction-case
Thermal resistance junction-ambient
Thermal resistance junction-pcb
1. When mounted on a 1-inch² FR-4, 2 Oz copper board.
DPAK
50
Table 3. Avalanche characteristics
Symbol
I
AR
E
AS
Single pulse avalanche energy
Parameter
Avalanche current, repetitive or not repetitive
1. Pulse width limited by T jmax
.
2. starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Value
±25
7
4.4
28
85
15
50
-55 to 150
Value
TO-220
1.47
62.5
IPAK
Unit
100 °C/W
Value
1.5
110
°C
Unit
A mJ
A
W
V/ns
Unit
V
A
DS10348 - Rev 6 page 2/27
2
STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics
Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Table 4. Static
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source onresistance
V
GS
= 0 V, V
DS
= 650 V
V
GS
= 0 V, V
DS
= 650 V, T case
= 125 °C
V
V
V
DS
DS
GS
1. Defined by design, not subject to production test.
= 0 V, V
GS
= V
GS
, I
D
= 10 V, I
D
= ±25 V
= 250 µA
= 3.5 A
Min.
650
2
Typ.
3
0.60
Max.
Unit
V
1
100
±10
4
0.68
µA
µA
V
Ω
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Test conditions
V
DS
= 100 V, f = 1 MHz, V
GS
= 0 V
Reverse transfer capacitance
Equivalent output capacitance V
DS
= 0 to 520 V, V
GS
= 0 V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
Total gate charge
Gate-source charge
V
DD
= 520 V, I
D
= 7 A, V
GS
= 0 to 10 V
(see
)
Gate-drain charge
Min.
-
-
-
-
-
-
-
-
Typ.
410
20
0.9
43
6.4
12.5
3.2
5.8
Max.
-
-
-
-
-
-
-
-
Unit pF pF
Ω nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS
increases from 0 to 80% V
DSS
.
Symbol Parameter t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 325 V, I
D
= 3.5 A R
G
= 4.7 Ω,
V
GS
and
)
Min.
-
-
-
-
Typ.
9.5
7.5
26
15
Max.
-
-
-
-
Unit ns
DS10348 - Rev 6 page 3/27
STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics
Table 7. Source-drain diode
Symbol Parameter
I
SD
I
SDM
Source-drain current
Source-drain current (pulsed)
V
SD
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
Test conditions
V
T j
GS
SD
SD
= 0 V, I
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
SD
= 7 A
= 7 A, di/dt = 100 A/µs, V
(see
)
= 7 A, di/dt = 100 A/µs, V
DD
DD
= 60 V
= 60 V,
-
-
-
-
-
-
-
Min.
-
-
318
2.5
15.5
437
3.2
15
Typ.
Max.
7
28
1.6
Unit
A
A
V ns
µC
A ns
µC
A
DS10348 - Rev 6 page 4/27
STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for DPAK and IPAK
I
D
(A)
10 1
Operation in this area is limited by R
DS(on)
GIPG140815MQF1DSOA
10 μs
100 μs
10 0
1 ms
10 ms
10 -1
10 -2
10 -1 10 0
T j
T c
≤ 150 °C
= 25 °C single pulse
10 1 10 2 V
DS
(V)
Figure 3. Safe operating area for TO-220
I
D
(A)
10 1
Operation in this area is limited by R
DS(on)
GIPG140815MQF1PSOA
10 μs
100 μs
10 0 1 ms
10 ms
10 -1
10 -2
10 -1 10 0
T j
T c
≤ 150 °C
= 25 °C single pulse
10 1 10 2 V
DS
(V)
4
2
0
0
8
6
I
D
(A)
12
Figure 5. Output characteristics
GIPG110515MQF1LOCH
V
GS
= 8,9,10 V
V
GS
= 7 V
10
V
GS
= 6 V
4 8 12
V
GS
= 5 V
16 V
DS
(V)
Figure 2. Thermal impedance for DPAK and IPAK
K
GC20460
10 0
10 -1
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Thermal impedance for TO-220
4
2
0
0
8
6
Figure 6. Transfer characteristics
I
D
(A)
12
V
DS
= 19 V
GIPG110515MQF1LTCH
10
2 4 6 8 V
GS
(V)
DS10348 - Rev 6 page 5/27
Figure 7. Gate charge vs gate-source voltage
V
GS
(V)
12
10
V
DS
GIPG110515MQF1LQVG V
DS
(V)
600
V
DD
= 520 V
I
D
= 7 A
500
4
2
0
0
8
6
2 4 6 8
400
300
10 12
200
100
Q
0 g
(nC)
C
(pF)
Figure 9. Capacitance variations
GIPG140815MQF1PCVR
10 3
C
ISS
10 2
C
OSS
10 1
10 0 f = 1 MHz
C
RSS
10 -1
10 -1 10 0 10 1 10 2
V
DS
(V)
Figure 11. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
2.2
GIPG110515MQF1LRON
V
GS
= 10 V
1.8
1.4
1.0
0.6
0.2
-75 -25 25 75 125 T j
(°C)
STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics (curves)
Figure 8. Static drain-source on-resistance
R
DS(on)
(Ω)
GIPG140815MQF1PRID
V
GS
= 10 V
0.624
0.608
0.592
0.576
0 2 4 6 I
D
(A)
Figure 10. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
1.1
GIPG110515MQF1LVTH
I
D
= 250 µA
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T j
(°C)
Figure 12. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
1.08
GIPG110515MQF1LBDV
I
D
= 1 mA
1.04
1.00
0.96
0.92
0.88
-75 -25 25 75 125 T j
(°C)
DS10348 - Rev 6 page 6/27
Figure 13. Output capacitance stored energy
E
OSS
(μJ)
GIPG110515MQF1LEOS
3
2
1
0
0 100 200 300 400 500 600 V
DS
(V)
STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics (curves)
Figure 14. Source- drain diode forward characteristics
V
SD
(V)
GIPG140815MQF1PSDF
T j
= -50 °C
1.0
T j
= 25 °C
0.8
T j
= 150 °C
0.6
0.4
0 2 4 6 I
SD
(A)
DS10348 - Rev 6 page 7/27
STD11N65M2, STP11N65M2, STU11N65M2
Test circuits
3
Test circuits
Figure 15. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 17. Test circuit for inductive load switching and diode recovery times
Figure 16. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
I
G
= CONST
2.7 kΩ
47 kΩ
1 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 18. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 19. Unclamped inductive waveform
V (BR)DSS
V D
I DM
I D
V DD V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 20. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS10348 - Rev 6 page 8/27
4
STD11N65M2, STP11N65M2, STU11N65M2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
DS10348 - Rev 6 page 9/27
4.1
STD11N65M2, STP11N65M2, STU11N65M2
DPAK (TO-252) type A package information
DPAK (TO-252) type A package information
Figure 21. DPAK (TO-252) type A package outline
DS10348 - Rev 6
0068772_A_26 page 10/27
DS10348 - Rev 6
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
(L1)
STD11N65M2, STP11N65M2, STU11N65M2
DPAK (TO-252) type A package information
Table 8. DPAK (TO-252) type A mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
4.60
2.159
4.445
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
4.70
2.286
4.572
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
4.80
2.413
4.699
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 11/27
4.2
STD11N65M2, STP11N65M2, STU11N65M2
DPAK (TO-252) type C package information
DPAK (TO-252) type C package information
Figure 22. DPAK (TO-252) type C package outline
DS10348 - Rev 6
0068772_C_26 page 12/27
DS10348 - Rev 6
Dim.
L
L1
L2
L3
L4
L6
θ1
θ2
V2 c2
D
D1
E
E1 e
H
A
A1
A2 b b4 c
STD11N65M2, STP11N65M2, STU11N65M2
DPAK (TO-252) type C package information
Table 9. DPAK (TO-252) type C mechanical data
0.72
5.13
0.47
0.47
6.00
Min.
2.20
0.90
0.00
5.25
6.50
4.70
2.186
9.80
1.40
mm
Typ.
2.30
1.01
5.33
6.10
6.60
2.286
10.10
1.50
2.90 REF
0.90
0.60
5°
5°
0°
0.51 BSC
0.80
1.80 BSC
7°
7°
6.70
2.386
10.40
1.70
1.25
0.85
5.46
0.60
0.60
6.20
Max.
2.38
1.10
0.10
1.00
9°
9°
8° page 13/27
4.3
STD11N65M2, STP11N65M2, STU11N65M2
DPAK (TO-252) type E package information
DPAK (TO-252) type E package information
Figure 23. DPAK (TO-252) type E package outline
DS10348 - Rev 6
0068772_type-E_rev.26
page 14/27
DS10348 - Rev 6
STD11N65M2, STP11N65M2, STU11N65M2
DPAK (TO-252) type E package information
Dim.
D
D1
E
E1 e e1
H
L
L1
L2
L4
A
A2 b b4 c c2
Table 10. DPAK (TO-252) type E mechanical data
Min.
2.18
mm
Typ.
5.97
5.21
6.35
4.32
0.65
4.95
0.46
0.46
2.286
4.572
9.94
1.50
0.89
2.74
Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm)
10.34
1.78
1.27
1.02
Max.
2.39
0.13
0.884
5.46
0.61
0.60
6.22
6.73
FP_0068772_26 page 15/27
4.4
STD11N65M2, STP11N65M2, STU11N65M2
DPAK (TO-252) packing information
DPAK (TO-252) packing information
Figure 25. DPAK (TO-252) tape outline
T
Top cover tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
F
E
W
User direction of feed
R
Bending radius
AM08852v1
DS10348 - Rev 6 page 16/27
DS10348 - Rev 6
A
D
B
STD11N65M2, STP11N65M2, STU11N65M2
DPAK (TO-252) packing information
Figure 26. DPAK (TO-252) reel outline
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
AM06038v1
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
Table 11. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
16.4
50 1.85
7.6
2.75
4.1
8.1
2.1
0.35
16.3
Base qty.
Bulk qty.
mm
Max.
330
13.2
18.4
22.4
2500
2500 page 17/27
4.5
STD11N65M2, STP11N65M2, STU11N65M2
TO-220 type A package information
TO-220 type A package information
Figure 27. TO-220 type A package outline
DS10348 - Rev 6
0015988_typeA_Rev_22 page 18/27
DS10348 - Rev 6
Dim.
E e e1
F
H1
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
STD11N65M2, STP11N65M2, STU11N65M2
TO-220 type A package information
Table 12. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
3.85
2.95
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
page 19/27
4.6
STD11N65M2, STP11N65M2, STU11N65M2
IPAK (TO-251) type A package information
IPAK (TO-251) type A package information
Figure 28. IPAK (TO-251) type A package outline
DS10348 - Rev 6
0068771_IK_typeA_rev14 page 20/27
DS10348 - Rev 6
Dim.
D
E e c c2 e1
H
L
L1
L2
V1
A
A1 b b2 b4
B5
STD11N65M2, STP11N65M2, STU11N65M2
IPAK (TO-251) type A package information
Table 13. IPAK (TO-251) type A package mechanical data mm
Typ.
Min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
0.30
2.28
16.10
0.80
10°
0.60
0.60
6.20
6.60
4.60
Max.
2.40
1.10
0.90
0.95
5.40
9.40
1.20
1.00
page 21/27
4.7
STD11N65M2, STP11N65M2, STU11N65M2
IPAK (TO-251) type C package information
IPAK (TO-251) type C package information
Figure 29. IPAK (TO-251) type C package outline
DS10348 - Rev 6
0068771_IK_typeC_rev14 page 22/27
DS10348 - Rev 6
Dim.
c2
D
D1
E
E1 e e1
A
A1 b b2 b4 c
L2
θ1
θ2
H
L
L1
STD11N65M2, STP11N65M2, STU11N65M2
IPAK (TO-251) type C package information
Table 14. IPAK (TO-251) type C package mechanical data
Min.
2.20
0.90
0.66
mm
Typ.
2.30
1.00
5.20
6.50
4.60
2.20
4.40
5.23
0.46
0.46
6.00
16.18
9.00
0.80
0.90
3°
1°
5.33
6.10
5.37
6.60
4.78
2.25
4.50
16.48
9.30
1.00
1.08
5°
3°
16.78
9.60
1.20
1.25
7°
5°
5.55
6.70
4.95
2.30
4.60
0.90
5.43
0.59
0.59
6.20
Max.
2.35
1.10
0.79
page 23/27
5
STD11N65M2, STP11N65M2, STU11N65M2
Ordering information
Ordering information
Order code
STD11N65M2
STP11N65M2
STU11N65M2
Table 15. Ordering information
Marking
11N65M2
Package
DPAK
TO-220
IPAK
Packing
Tape and reel
Tube
DS10348 - Rev 6 page 24/27
STD11N65M2, STP11N65M2, STU11N65M2
Revision history
Table 16. Document revision history
Date
16-May-2014
Revision Changes
1 First release.
14-Aug-2015
17-Aug-2015
2
3
Text and formatting chamges throughout document.
On cover page:
- updated Title , Features and Description
In section Electrical characteristics :
- updated and renamed table Static (was On /off states)
Updated section Electrical characteristics (curves)
Updated and renamed section Package information (was Package mechanical data)
Datasheet promoted from preliminary data to production data.
In section Electrical ratings :
- updated and renamed table Absolute maximum ratings
In section Electrical characteristics :
- updated table Source-drain diode
In section Electrical characteristics (curves)
- updated figure Thermal impedance for DPAK and IPAK
Updated and renamed section IPAK (TO-251) Type C package information (was IPAK (TO-251)
Type A package information)
07-Sep-2015 4
16-Oct-2018
18-Jun-2019
5
6
Minor text and formatting changes throughout document.
Updated
.
Minor text changes.
Updated
Minor text changes.
DS10348 - Rev 6 page 25/27
STD11N65M2, STP11N65M2, STU11N65M2
Contents
Contents
DS10348 - Rev 6 page 26/27
STD11N65M2, STP11N65M2, STU11N65M2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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DS10348 - Rev 6 page 27/27
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