STMicroelectronics STD2NK90Z-1 Datasheet
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STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Datasheet
N-channel 900 V, 5 Ω typ., 2.1 A SuperMESH™ Power MOSFETs in IPAK, DPAK and TO-220 packages
TAB
IPAK 1
2
3
TAB
G(1)
TO-220
1
2
3
D(2, TAB)
S(3)
Product status link
STD2NK90Z-1
STD2NK90ZT4
STP2NK90Z
TAB
DPAK
2
1
3
AM01475V1
Features
Order code V
DS
STD2NK90Z-1
STD2NK90ZT4 900 V
STP2NK90Z
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
R
DS(on)
max.
6.5 Ω
I
D
2.1 A
Package
IPAK
DPAK
TO-220
Applications
• Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
DS4030 - Rev 5 - June 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DS
V
GS
I
D
I
D
I
DM
P
TOT
ESD dv/dt
T j
T stg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
= 25 °C
= 100 °C
Gate-source human body model (C = 100 pF, R =1.5 kΩ)
Peak diode recovery voltage slope
Operating junction temperature range
Storage temperature range
Parameter
1. Pulse width limited by safe operating area.
2. I
SD
≤ 2.1 A, di/dt ≤ 200 A/µs, V
DD
= 80% V
(BR)DSS
.
Table 2. Thermal data
Symbol Parameter
R thj-case
R thj-pcb
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-pcb
Thermal resistance junction-ambient
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
Table 3. Avalanche characteristics
Symbol
I
AS
E
AS
Single-pulse avalanche current
Single pulse avalanche energy
1. Pulse width limited by T jmax
.
2. Starting T j
= 25°C, I
D
= I
AR
, V
DD
= 50 V.
Parameter
Value
900
±30
2.1
1.3
8.4
70
2
4.5
-55 to 150
Value
DPAK IPAK TO-220
1.78
50
100 62.5
Unit
°C/W
Value
2.1
150
Unit
A mJ
A
A
A
Unit
V
V
W kV
V/ns
°C
DS4030 - Rev 5 page 2/24
2
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Electrical characteristics
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
V
GS
= 0 V, I
D
Test conditions
= 1 mA
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 900 V
V
GS
= 0 V, V
DS
= 900 V, T
C
= 125 °C
V
R
I
GSS
GS(th)
DS(on)
Gate-body leakage current
Gate threshold voltage
Static drain-source on resistance
V
V
V
DS
DS
GS
= 0 V, V
GS
= V
GS
, I
D
= 10 V, I
1. Defined by design, not subject to production test.
D
= ±20 V
= 50 µA
= 1.05 A
Min.
900
3
Typ.
Max.
3.75
5
1
50
±10
4.5
6.5
µA
V
Ω
Unit
V
µA
µA
Table 5. Dynamic
Symbol Parameter Test conditions Min.
Typ.
Max.
Unit
C iss
C oss
Input capacitance
Output capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
-
485
50 pF
C rss
C oss eq.
Reverse transfer capacitance
Equivalent output capacitance
V
GS
= 0 V, V
DS
= 0 V to 720 V -
10
24 pF
Q
Q
Q g gs gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 720 V, I
D
= 2 A,
V
GS
= 0 to 10 V
(see Figure 14. Test circuit for gate charge behavior
)
-
19.5
3.4
10.8
27 nC
1. C oss eq.
80% V
is defined as a constant equivalent capacitance giving the same charging time as C oss
DSS
.
when V
DS increases from 0 to
Symbol t d(on) t r t d(off) t r
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
V
GS
= 450 V, I
= 10 V
D
= 1 A, R
G
= 4.7 Ω,
)
Min.
-
Typ.
21
11
43
40
Max.
-
Unit ns
DS4030 - Rev 5 page 3/24
DS4030 - Rev 5
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
I
SD
SDM
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Test conditions
V
SD
I
I t
Q
RRM t
Q rr rr rr rr
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 2.1 A, V
GS
= 0 V
I
SD
= 2 A, di/dt = 100 A/µs
V
DD
= 50 V
(see Figure 15. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 2 A, di/dt = 100 A/µs
V
DD
= 50 V, T j
= 150 °C
(see Figure 15. Test circuit for inductive load switching and diode recovery times
)
1. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
2. Pulse width is limited by safe operating area.
Symbol
V
(BR)GSO
Parameter
Gate-source breakdown voltage
Table 8. Gate-source Zener diode
Test conditions
I
GS
= ±1 mA, I
D
= 0 A
Min.
-
-
-
-
-
-
-
-
-
515
1.9
7.5
415
1.5
7.2
Typ.
Max.
2.1
8.4
1.6
Unit
A
A ns
μC
A
V ns
μC
Min.
30
Typ.
-
Max.
-
Unit
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
page 4/24
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Static drain-source on resistance
V
GS
=10V
Figure 6. Gate charge vs gate-source voltage
DS4030 - Rev 5 page 5/24
Figure 7. Capacitance variations
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Electrical characteristics (curves)
Figure 8. Normalized gate threshold voltage vs temperature
Figure 9. Normalized on resistance vs temperature Figure 10. Source-drain diode forward characteristics
Figure 11. Normalized V
(BR)DSS
vs temperature Figure 12. Maximum avalanche energy vs temperature
DS4030 - Rev 5 page 6/24
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V (BR)DSS
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS4030 - Rev 5 page 7/24
4
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS4030 - Rev 5 page 8/24
4.1
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
IPAK (TO-251) type A package information
IPAK (TO-251) type A package information
Figure 19. IPAK (TO-251) type A package outline
DS4030 - Rev 5
0068771_IK_typeA_rev14 page 9/24
DS4030 - Rev 5
Dim.
D
E e c c2 e1
H
L
L1
L2
V1
A
A1 b b2 b4
B5
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
IPAK (TO-251) type A package information
Table 9. IPAK (TO-251) type A package mechanical data mm
Typ.
Min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
0.30
2.28
16.10
0.80
10°
0.60
0.60
6.20
6.60
4.60
Max.
2.40
1.10
0.90
0.95
5.40
9.40
1.20
1.00
page 10/24
4.2
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
DPAK (TO-252) type A2 package information
DPAK (TO-252) type A2 package information
Figure 20. DPAK (TO-252) type A2 package outline
DS4030 - Rev 5
0068772_type-A2_rev25 page 11/24
DS4030 - Rev 5
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
L1
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
DPAK (TO-252) type A2 package information
Table 10. DPAK (TO-252) type A2 mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
5.10
2.159
4.445
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
5.20
2.286
4.572
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
5.30
2.413
4.699
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 12/24
4.3
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
DPAK (TO-252) type C2 package information
DPAK (TO-252) type C2 package information
Figure 21. DPAK (TO-252) type C2 package outline
DS4030 - Rev 5
0068772_C2_25 page 13/24
DS4030 - Rev 5
Dim.
L
L1
L2
L3
L4
L6
θ1
θ2
V2 c2
D
D1
E
E1 e
H
A
A1
A2 b b4 c
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
DPAK (TO-252) type C2 package information
Table 11. DPAK (TO-252) type C2 mechanical data
0.72
5.13
0.47
0.47
6.00
Min.
2.20
0.90
0.00
5.10
6.50
5.20
2.186
9.80
1.40
mm
Typ.
2.30
1.01
5.33
6.10
6.60
2.286
10.10
1.50
2.90 REF
0.90
0.60
5°
5°
0°
0.51 BSC
0.80
1.80 BSC
7°
7°
1.00
9°
9°
8°
0.85
5.46
0.60
0.60
6.20
Max.
2.38
1.10
0.10
5.60
6.70
5.50
2.386
10.40
1.70
1.25
page 14/24
4.4
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
DPAK (TO-252) type E package information
DPAK (TO-252) type E package information
Figure 22. DPAK (TO-252) type E package outline
DS4030 - Rev 5
0068772_type-E_rev.25
page 15/24
DS4030 - Rev 5
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
DPAK (TO-252) type E package information
Dim.
D
D1
E
E1 e e1
H
L
L1
L2
L4
A
A2 b b4 c c2
Table 12. DPAK (TO-252) type E mechanical data
Min.
2.18
mm
Typ.
5.97
5.21
6.35
4.32
0.65
4.95
0.46
0.46
2.286
4.572
9.94
1.50
0.89
2.74
Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm)
10.34
1.78
1.27
1.02
Max.
2.39
0.13
0.884
5.46
0.61
0.60
6.22
6.73
FP_0068772_25 page 16/24
4.5
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
DPAK (TO-252) packing information
DPAK (TO-252) packing information
Figure 24. DPAK (TO-252) tape outline
T
Top cover tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
F
E
W
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
User direction of feed
R
Bending radius
AM08852v1
DS4030 - Rev 5 page 17/24
DS4030 - Rev 5
Dim.
D1
E
F
K0
P0
A0
B0
B1
D
P1
P2
R
T
W
A
D
B
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
DPAK (TO-252) packing information
Figure 25. DPAK (TO-252) reel outline
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
AM06038v1
2.55
3.9
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
Table 13. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
C
D
A
B
G
N
T
Min.
1.5
12.8
20.2
16.4
50 1.85
7.6
2.75
4.1
8.1
2.1
0.35
16.3
Base qty.
Bulk qty.
mm
Max.
330
13.2
18.4
22.4
2500
2500 page 18/24
4.6
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
TO-220 type A package information
TO-220 type A package information
Figure 26. TO-220 type A package outline
DS4030 - Rev 5
0015988_typeA_Rev_21 page 19/24
DS4030 - Rev 5
Dim.
E e e1
F
H1
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
TO-220 type A package information
Table 14. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
3.85
2.95
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
page 20/24
5
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Ordering information
Ordering information
Order code
STD2NK90Z-1
STD2NK90ZT4
STP2NK90Z
Table 15. Order codes
Marking
D2NK90Z
P2NK90Z
Package
IPAK
DPAK
TO-220
Packing
Tube
Tape and reel
Tube
DS4030 - Rev 5 page 21/24
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Revision history
Date
06-Oct-2004
08-Sep-2005
05-Mar-2006
27-Jul-2006
28-Jun-2018
Version
1
2
3
4
5
Table 16. Document revision history
Changes
First version
Complete version
Inserted Ecopack indication
New template, no content change
Removed maturity status indication from cover page. The document status is production data.
Updated title in cover page, Section 1 Electrical ratings ,
Section 2 Electrical characteristics
and Section 4 Package information
.
Minor text changes.
DS4030 - Rev 5 page 22/24
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
Contents
Contents
DS4030 - Rev 5 page 23/24
STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
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© 2018 STMicroelectronics – All rights reserved
DS4030 - Rev 5 page 24/24
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