STD3NK50Z-1, STD3NK50ZT4
Datasheet
N-channel 500 V, 2.8 Ω typ., 2.3 A SuperMESH™ Power MOSFETs in IPAK and DPAK packages
TAB
IPAK 1
2
3
G(1)
D(2, TAB)
S(3)
Product status link
STD3NK50Z-1
STD3NK50ZT4
TAB
DPAK
2
1
3
Features
Order codes V
DSS
STD3NK50Z-1
500 V
STD3NK50ZT4
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
R
DS(on)
max.
3.3 Ω
Applications
• Switching applications
AM01475V1
P
TOT
45 W
Package
IPAK
DPAK
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
DS3956 - Rev 3 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STD3NK50Z-1, STD3NK50ZT4
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT dv/dt
(2)
ESD
T j
T stg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Parameter
= 25 °C
= 100 °C
Peak diode recovery voltage slope
Gate-source human body model (C = 100 pF, R = 1.5 kΩ)
Operating junction temperature range
Storage temperature range
1. Pulse width limited by safe operating area.
2. I
SD
≤ 2 A, di/dt ≤ 200 A/µs, V
DD
≤ V
(BR)DSS
.
Table 2. Thermal data
Symbol Parameter
R thj-case
R thj-amb
R thj-pcb
(1)
Thermal resistance junction- case
Thermal resistance junction-ambient
Thermal resistance junction-pcb
1. When mounted on an 1-inch² FR-4, 2oz Cu board.
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by T j
max)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
500
±30
2.3
1.45
9.2
45
4.5
2
-55 to 150
IPAK
Value
DPAK
2.78
100
50
Unit
°C/W
°C/W
°C/W
Value
2.3
120
Unit
A mJ
A
A
A
Unit
V
V
W
V/ns kV
°C
DS3956 - Rev 3 page 2/21
2
STD3NK50Z-1, STD3NK50ZT4
Electrical characteristics
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
V
GS
Test conditions
= 0 V, I
D
= 1 mA
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source on resistance
V
GS
= 0 V, V
DS
= 500 V
V
GS
= 0 V, V
DS
= 500 V,
T
C
= 125 °C
(1)
V
V
DS
V
DS
GS
1. Defined by design, not subject to production test.
= 0 V, V
= V
GS
GS
, I
D
= 10 V, I
D
= ±20 V
= 50 µA
= 1.15 A
Min.
500
3
Typ.
3.75
2.8
Max.
1
50
±10
4.5
3.3
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
t d(on) t r t d(off)
Q
Q t
Q f g gs gd
Parameter
Input capacitance
Test conditions
Output capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
Reverse transfer capacitance
Equivalent output capacitance V
GS
= 0 V, V
DS
= 0 V to 400 V
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 250 V, I
D
= 1.15 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13. Test circuit for resistive load switching times
and
Figure 18. Switching time waveform )
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400 V, I
D
= 2.3 A,
V
GS
= 0 to 10 V
(see Figure 14. Test circuit for gate charge behavior
)
Min.
-
-
-
-
Typ.
280
42
8
27.5
8
13
24
14
11
2.5
5.6
Max.
15
Unit pF ns nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to
80% V
DSS
.
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
Table 6. Source-drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Test conditions
I
SD
= 2.3 A, V
GS
= 0 V
Min.
-
-
-
Typ.
Max.
2.3
9.2
1.6
Unit
A
V
µA nA
V
Ω
Unit
V
µA
DS3956 - Rev 3 page 3/21
DS3956 - Rev 3
STD3NK50Z-1, STD3NK50ZT4
Electrical characteristics
Symbol
I
I
Q rr
RRM t t rr
Q rr rr
RRM
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
SD
= 2.3 A, di/dt = 100 A/µs
V
DD
= 40 V
(see Figure 15. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 2.3 A, di/dt = 100 A/µs
V
DD
= 40 V, T j
= 150 °C
(see Figure 15. Test circuit for inductive load switching and diode recovery times
)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
-
-
-
-
Min.
-
-
Symbol
V
(BR)GSO
Parameter
Gate-source breakdown voltage
Table 7. Gate-source Zener diode
Test conditions Min.
I
GS
= ±1 mA, I
D
= 0 A ±30
Typ.
250
745
6
300
960
6.2
Max.
A ns nC
A
Unit ns nC
Typ.
-
Max.
-
Unit
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
page 4/21
STD3NK50Z-1, STD3NK50ZT4
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Capacitance variations Figure 6. Gate charge vs gate-source voltage
DS3956 - Rev 3 page 5/21
Figure 7. Normalized gate threshold voltage vs temperature
STD3NK50Z-1, STD3NK50ZT4
Electrical characteristics (curves)
Figure 8. Static drain-source on resistance
Figure 9. Source-drain diode forward characteristic Figure 10. Maximum avalanche energy vs temperature
Figure 11. Normalized V
(BR)DSS
vs temperature Figure 12. Normalized on resistance vs temperature
DS3956 - Rev 3 page 6/21
STD3NK50Z-1, STD3NK50ZT4
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V (BR)DSS
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS3956 - Rev 3 page 7/21
4
STD3NK50Z-1, STD3NK50ZT4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS3956 - Rev 3 page 8/21
4.1
STD3NK50Z-1, STD3NK50ZT4
IPAK (TO-251) type A package information
IPAK (TO-251) type A package information
Figure 19. IPAK (TO-251) type A package outline
DS3956 - Rev 3
0068771_IK_typeA_rev14 page 9/21
DS3956 - Rev 3
Dim.
D
E e c c2 e1
H
L
L1
L2
V1
A
A1 b b2 b4
B5
STD3NK50Z-1, STD3NK50ZT4
IPAK (TO-251) type A package information
Table 8. IPAK (TO-251) type A package mechanical data mm
Typ.
Min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
0.30
2.28
16.10
0.80
10°
0.60
0.60
6.20
6.60
4.60
Max.
2.40
1.10
0.90
0.95
5.40
9.40
1.20
1.00
page 10/21
4.2
STD3NK50Z-1, STD3NK50ZT4
IPAK (TO-251) type C package information
IPAK (TO-251) type C package information
Figure 20. IPAK (TO-251) type C package outline
DS3956 - Rev 3
0068771_IK_typeC_rev14 page 11/21
DS3956 - Rev 3
Dim.
c2
D
D1
E
E1 e e1
A
A1 b b2 b4 c
L2
θ1
θ2
H
L
L1
STD3NK50Z-1, STD3NK50ZT4
IPAK (TO-251) type C package information
Table 9. IPAK (TO-251) type C package mechanical data
Min.
2.20
0.90
0.66
mm
Typ.
2.30
1.00
5.20
6.50
4.60
2.20
4.40
5.23
0.46
0.46
6.00
16.18
9.00
0.80
0.90
3°
1°
5.33
6.10
5.37
6.60
4.78
2.25
4.50
16.48
9.30
1.00
1.08
5°
3°
16.78
9.60
1.20
1.25
7°
5°
5.55
6.70
4.95
2.30
4.60
0.90
5.43
0.59
0.59
6.20
Max.
2.35
1.10
0.79
page 12/21
4.3
STD3NK50Z-1, STD3NK50ZT4
DPAK (TO-252) type A package information
DPAK (TO-252) type A package information
Figure 21. DPAK (TO-252) type A package outline
DS3956 - Rev 3
0068772_A_25 page 13/21
DS3956 - Rev 3
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
(L1)
STD3NK50Z-1, STD3NK50ZT4
DPAK (TO-252) type A package information
Table 10. DPAK (TO-252) type A mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
4.60
2.159
4.445
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
4.70
2.286
4.572
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
4.80
2.413
4.699
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 14/21
4.4
STD3NK50Z-1, STD3NK50ZT4
DPAK (TO-252) type C package information
DPAK (TO-252) type C package information
Figure 22. DPAK (TO-252) type C package outline
DS3956 - Rev 3
0068772_C_25 page 15/21
DS3956 - Rev 3
Dim.
L
L1
L2
L3
L4
L6
θ1
θ2
V2 c2
D
D1
E
E1 e
H
A
A1
A2 b b4 c
STD3NK50Z-1, STD3NK50ZT4
DPAK (TO-252) type C package information
Table 11. DPAK (TO-252) type C mechanical data
0.72
5.13
0.47
0.47
6.00
Min.
2.20
0.90
0.00
5.25
6.50
4.70
2.186
9.80
1.40
mm
Typ.
2.30
1.01
5.33
6.10
6.60
2.286
10.10
1.50
2.90 REF
0.90
0.60
5°
5°
0°
0.51 BSC
0.80
1.80 BSC
7°
7°
6.70
2.386
10.40
1.70
1.25
0.85
5.46
0.60
0.60
6.20
Max.
2.38
1.10
0.10
1.00
9°
9°
8° page 16/21
STD3NK50Z-1, STD3NK50ZT4
DPAK (TO-252) type C package information
Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25_C
DS3956 - Rev 3 page 17/21
5
STD3NK50Z-1, STD3NK50ZT4
Ordering information
Ordering information
Order code
STD3NK50Z-1
STD3NK50ZT4
Table 12. Order codes
Marking
D3NK50Z
Package
IPAK
DPAK
Packing
Tube
Tape and reel
DS3956 - Rev 3 page 18/21
STD3NK50Z-1, STD3NK50ZT4
Revision history
Date
09-Jul-2004
17-Jan-2005
03-Aug-2018
Version
1
2
3
Table 13. Document revision history
Changes
First release.
Complete version
Removed maturity status indication from cover page. The document status is production data.
The part number STQ3NK50ZR-AP has been moved to a separate datasheet.
Updated Section 1 Electrical ratings ,
Section 2 Electrical characteristics
and
Section 4 Package information
.
Added
Section 5 Ordering information
.
Minor text changes.
DS3956 - Rev 3 page 19/21
STD3NK50Z-1, STD3NK50ZT4
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.3
DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.4
DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
DS3956 - Rev 3 page 20/21
STD3NK50Z-1, STD3NK50ZT4
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS3956 - Rev 3 page 21/21
