STMicroelectronics ST24180 Datasheet
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ST24180
Datasheet
180 W, 32 V, 2.3 to 2.5 GHz RF power LDMOS transistor
1
Pin
1
2
3
3
2
B2
Pin connection
Connection
Gate
Source (bottom side)
Drain
Features
Order code
ST24180
Frequency
2350 MHz
V
DD
32 V
P
OUT
180 W
Gain
15.3 dB
Efficiency
48%
• High efficiency and linear gain operations
• Integrated ESD protection
• Internal input matching for ease of use
• Large positive and negative gate/source voltage range for improved class C operation
• In compliance with the European Directive 2002/95/EC
Applications
• RF energy
• Industrial, scientific and medical (ISM)
Description
The ST24180 is a 180 W, internally-matched LDMOS FET designed for multiple uses, especially for RF energy applications such as cooking, heating and medical with frequencies from 2400 to 2500 MHz. It is qualified for operations requiring up to
32 V.
Product status link
ST24180
Product summary
Order code ST24180
Marking
Package
ST24180
B2
Packing
Base / Bulk
Tape and Reel 13"
120 / 120
DS12777 - Rev 2 - October 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
ST24180
Electrical ratings
Electrical ratings
Symbol
V
(BR)DSS
V
GS
V
DD
T
STG
T
J
Table 1. Absolute maximum ratings (+25 °C)
Parameter
Drain-source voltage
Gate-source voltage
Drain supply voltage
Storage temperature range
Maximum junction temperature
Symbol
R thj-case
Table 2. Thermal data
Parameter
Junction-case thermal resistance
T
CASE
= +85 °C , T
J
= +200 °C, DC test
Value
65
-6 to +10
32
-65 to +150
+200
Value
0.35
Symbol
HBM
Table 3. ESD protection
Parameter
Human body model (according to JESD22-A114)
Class
2
Unit
°C/W
V
°C
°C
Unit
V
V
DS12777 - Rev 2 page 2/11
2
ST24180
Electrical characteristics
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
DS(on)
Table 4. Static
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 100 µA
Zero-gate voltage drain current V
GS
= 0 V, V
DS
= 28 V
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= 10 V
V
DS
= 28 V, I
D
= 600 μA
Static drain-source on-voltage V
GS
= 10 V, I
D
= 1.55 A
Symbol
P
OUT
Gain
Parameter
Output power
Power gain
Efficiency Drain efficiency
VSWR Load mismatch
Min.
65
1.5
Typ.
Max.
1
1
2.5
0.22
Unit
V
μA
μA
V
V
Table 5. Dynamic
Test conditions
V
DD
= 32 V, I
DQ
= 0.8 A, f = 2350 MHz,
PW = 10 μs, DC = 10% (see
Figure 1. Power gain and drain efficiency vs output power (at 2350
and Figure 3. Test circuit (f =
)
P
OUT
= 180 W, all phases
Min.
-
-
Typ.
180
15.3
Max.
-
-
Unit
W dB
48 %
10:1
DS12777 - Rev 2 page 3/11
2.1
ST24180
Electrical characteristics (curves)
Electrical characteristics (curves)
Figure 1. Power gain and drain efficiency vs output power (at 2350 MHz)
P
OUT
(W)
Note: V
DD
= 32 V, I
DQ
= 800 mA, pulse width = 10 μs, duty cycle = 10%
GADG121020201149
DS12777 - Rev 2 page 4/11
ST24180
Electrical characteristics (curves)
Figure 2. Power gain and drain efficiency vs output power (2400 - 2500 MHz)
Note: V
DD
= 28 V, I
DQ
= 800 mA, pulse width = 10 μs, duty cycle = 10%
DS12777 - Rev 2 page 5/11
3
Test circuits
Figure 3. Test circuit (f = 2350 MHz)
ST24180
Test circuits
DS12777 - Rev 2 page 6/11
4
4.1
ST24180
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
B2 package information
Figure 4. B2 package outline
DS12777 - Rev 2
00418521_2 page 7/11
Symbol
I
L
M
G
H
CH1
R
C
D
E
F
A
B
Min
12.57
9.65
20.44
19.31
9.27
3.23
1.44
19.68
4.70
0.07
0.89
Table 6. B2 mechanical data
1.57
19.81
4.83
0.10
1.02
2.72
0.51
Millimetres
Typ
12.7
9.78
20.57
19.44
9.40
3.61
ST24180
B2 package information
Max
12.83
9.91
20.70
19.57
9.53
3.99
1.70
19.94
4.96
0.15
1.15
DS12777 - Rev 2 page 8/11
Revision history
Date
01-Oct-2018
16-Oct-2020 2
Table 7. Document revision history
Version
1
Changes
Initial release
Updated Section Product status / summary
,
Section 4.1 B2 package information .
ST24180
DS12777 - Rev 2 page 9/11
ST24180
Contents
Contents
DS12777 - Rev 2 page 10/11
ST24180
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Purchasers’ products.
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© 2020 STMicroelectronics – All rights reserved
DS12777 - Rev 2 page 11/11
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