STGB20M65DF2
Datasheet
Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT
G(1)
TAB
2
1
3
D²PAK
C(2, TAB)
E(3)
Features
• High short-circuit withstand time
• V
CE(sat)
= 1.55 V (typ.) @ I
C
= 20 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and very fast recovery antiparallel diode
Applications
• Motor control
• UPS
• PFC
• General-purpose inverters
NG1E3C2T
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V
CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Product status link
STGB20M65DF2
Product summary
Order code
Marking
Package
Packing
STGB20M65DF2
G20M65DF2
D²PAK
Tape and reel
DS11370 - Rev 3 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STGB20M65DF2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
I
CES
C
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current I
CP
(1)
V
I
GE
F
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current I
FP
(1)
P
TOT
T
STG
T
J
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
1. Pulse width limited by maximum junction temperature.
Symbol
R thJC
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
650
40
20
80
±20
40
20
80
166
-55 to 150
-55 to 175
A
A
V
A
W
°C
°C
Unit
V
A
A
A
Value
0.9
2.08
62.5
Unit
°C/W
°C/W
°C/W
DS11370 - Rev 3 page 2/18
2
STGB20M65DF2
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol
V
(BR)CES
V
CE(sat)
V
F
V
GE(th)
I
CES
I
GES
Parameter
Collector-emitter breakdown voltage
Table 3. Static characteristics
Test conditions
V
GE
= 0 V, I
C
= 250 μA
Collector-emitter saturation voltage
Forward on-voltage
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
V
GE
= 15 V, I
C
= 20 A
V
GE
T
J
= 15 V, I
= 125 °C
C
= 20 A,
V
GE
T
J
= 15 V, I
= 175 °C
C
= 20 A,
I
F
= 20 A
I
F
= 20 A, T
J
= 125 °C
I
F
= 20 A, T
J
= 175 °C
V
CE
= V
GE
, I
C
= 500 µA
V
GE
= 0 V, V
CE
= 650 V
V
CE
= 0 V, V
GE
= ± 20 V
Min.
650
5
2.1
1.85
1.65
1.55
6
Typ.
Max.
Unit
V
1.55
1.95
2.0
V
V
7
25
250
V
µA nA
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Gate-collector charge
Table 4. Dynamic characteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Test conditions
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
V
CC
= 520 V, I
C
= 20 A,
V
GE
= 0 to 15 V
(see
Figure 29. Gate charge test circuit
)
Min.
-
-
-
-
-
-
Typ.
1688
95
35
63
15
26
Max.
-
-
-
-
-
-
Unit pF nC
DS11370 - Rev 3 page 3/18
DS11370 - Rev 3
STGB20M65DF2
Electrical characteristics
Symbol
E ts t d(on) t r
(di/dt) on t d(off) t f
E on
(1)
E off
(2)
E ts t d(on) t r
(di/dt) on t d(off) t f
E on
(1)
E off
(2)
t sc
Table 5. IGBT switching characteristics (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Test conditions
V
CE
= 400 V, I
C
= 20 A,
V
GE
= 15 V, R
G
= 12 Ω
(see
Figure 28. Test circuit for inductive load switching
)
V
CE
= 400 V, I
C
= 20 A,
V
GE
= 15 V, R
G
= 12 Ω,
T
J
= 175 °C
(see
Figure 28. Test circuit for inductive load switching
)
Min.
Short-circuit withstand time
V
CC
T
= 400 V, V
GE
Jstart
= 150 °C
= 13 V,
V
CC
T
= 400 V, V
GE
Jstart
= 150 °C
= 15 V,
10
6
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
145
0.3
0.85
1.15
0.56
0.7
28.4
11.2
1393
107
Typ.
26
10.8
1409
108
65
0.14
ns mJ mJ mJ mJ mJ ns ns
A/µs ns
Unit ns ns
A/µs ns ns mJ
µs
-
Symbol t rr
Q rr
I rrm dI rr
/dt
E rr t rr
Q rr
I rrm dI rr
/dt
E rr
Table 6. Diode switching characteristics (inductive load)
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Test conditions
I
F
= 20 A, V
R
= 400 V,
V
GE
= 15 V, di/dt = 1000 A/µs
(see
Figure 28. Test circuit for inductive load switching
)
I
F
= 20 A, V
R
= 400 V,
V
GE
= 15 V, T
J
= 175 °C, di/dt = 1000 A/µs
(see
Figure 28. Test circuit for inductive load switching
)
Min.
-
-
-
-
-
-
-
-
-
-
769
81
281
2010
19.6
370
Typ.
166
690
13.2
215
Max.
A/µs
µJ ns nC
A
A/µs
Unit ns nC
A
µJ page 4/18
STGB20M65DF2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
P
TOT
(W)
IGBT06111520M65BPDT
V
GE
≥ 15 V, T J ≤ 175 °C
160
120
80
40
0
-50 0 50 100 150 T
C
(°C)
Figure 3. Output characteristics (T
J
= 25 °C)
I
C
(A)
IGBT29101520M65FOC25
13 V
60
V
GE
= 15 V 11 V
40
9 V
20
0
0 1 2 3 4
7 V
5 V
CE
(V)
Figure 5. V
CE
(sat) vs junction temperature
V
CE(SAT)
(V)
3.0
V
GE
= 15 V
IGBT29101520M65FVCET
I
C
=40 A
2.6
2.2
1.8
1.4
1
-50 0 50 100
I
C
=20 A
I
C
=10 A
150 T
J
(°C)
Figure 2. Collector current vs case temperature
I
C
(A)
IGBT06111520M65BCCT
V
GE
≥ 15 V, T
J
≤ 175 °C
40
30
20
10
0
-50 0 50 100 150 T
C
(°C)
Figure 4. Output characteristics (T
J
= 175 °C)
I
C
(A)
IGBT29101520M65FOC175
V
GE
= 15 V
60
13 V
40
11 V
20
0
0 1 2 3 4
9 V
5
7 V
V
CE
(V)
Figure 6. V
CE
(sat) vs collector current
V
CE(SAT)
(V)
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0
V
GE
= 15 V
T j
= 175 °C
10 20
IGBT29101520M65FVCEC
30
T j
T j
= 25 °C
= - 40 °C
40 I
C
(A)
DS11370 - Rev 3 page 5/18
STGB20M65DF2
Electrical characteristics (curves)
Figure 7. Collector current vs switching frequency
I
C
(A)
IGBT06111520M65BCCS
Rectangular current shape
(duty cycle =0.5, V
V
GE
CC
= 400 V, R
G
= 12 Ω
= 0/15 V, T j
= 175 °C
40
T
C
= 80 °C
30
20
10
0
10 0
T
C
= 100 °C
10 1 10 2 f (kHz)
40
30
20
10
0
6
I
C
(A)
60
Figure 9. Transfer characteristics
IGBT29101520M65FTCH
V
CE
= 6 V
50
T
J
= 25 °C
7 8 9
T
J
= 175 °C
10 11 V
GE
(V)
Figure 8. Forward bias safe operating area
I
C
(A)
10 1
10 0
10 0 single pulse, T
T
J
C
≤ 175 °C, V
= 25°C,
GE
= 15 V
10 1
IGBT06111520M65BFSOA
10 2 t p
= 1 µs t p
= 10 µs t p
= 100 µs t p
= 1 ms
V
CE
(V)
1.4
1.0
0.6
0.2
0
Figure 10. Diode V
F
vs forward current
V
F
(V)
IGBT30101520M65FDVF
2.2
T j
= 25 °C
T j
= -40 °C
1.8
10
T j
= 175 °C
20 30 I
F
(A)
Figure 11. Normalized V
GE(th)
vs junction temperature
V
GE(th)
(Norm.)
IGBT29101520M65FNVGE
V
CE
= V
GE
, I
C
= 500 μΑ
1.1
1.0
0.9
0.8
0.7
-50 0 50 100 150 T
J
(°C)
Figure 12. Normalized V
(BR)CES
vs junction temperature
V
(BR)CES
(Norm.)
IGBT29101520M65FNVBR
I
C
= 250 µA
1.04
1.0
0.96
0.92
0.88
-50 0 50 100 150 T
J
(°C)
DS11370 - Rev 3 page 6/18
STGB20M65DF2
Electrical characteristics (curves)
C
(pF)
Figure 13. Capacitance variations
IGBT29101520M65FCVR
C ies
10 3
C oes
10 2
C res
10 1 f = 1 MHz
10 0
10 -1 10 0 10 1 10 2
V
CE
(V)
Figure 15. Switching energy vs collector current
E
(mJ) V
CC
= 400 V, R
V
GE
= 15 V, T
J
G
= 12 Ω,
= 175 °C
2.0
IGBT29101520M65FSLC
1.6
E tot
1.2
0.8
E off
0.4
0.0
0 10 20
E on
30 40 I
C
(A)
Figure 17. Switching energy vs temperature
E
(mJ)
IGBT29101520M65FSLT
V
CC
=400 V, I
C
= 20 A, R g
= 12 Ω, V
GE
= 15 V
1.0
E tot
0.8
E off
0.6
0.4
E on 0.2
0
0 50 100 150 T
J
(°C)
Figure 14. Gate charge vs gate-emitter voltage
V
GE
(V)
IGBT29101520M65FGCGE
V
CC
= 520 V, I
C
= 20 A, I
G
=1mA
16
12
8
4
0
0 10 20 30 40 50 60 70 Q g
(nC)
Figure 16. Switching energy vs gate resistance
E
(mJ)
IGBT29101520M65FSLG
V
CC
= 400 V, I
C
= 20 A, V
GE
= 15 V, T j
= 175 °C
2.4
E tot
2.0
1.6
1.2
0.8
0.4
0
0 40
E off
E on
80 120 R
G
(Ω)
Figure 18. Switching energy vs collector emitter voltage
E
(mJ)
1.4
I
C
= 20 A, R g
= 12 Ω, V
IGBT29101520M65FSLV
GE
= 15 V, T j
= 175 °C
1.2
1.0
0.8
0.6
0.4
0.2
0
150
E tot
250
E off
350
E on
450 V
CE
(V)
DS11370 - Rev 3 page 7/18
STGB20M65DF2
Electrical characteristics (curves)
Figure 19. Short-circuit time and current vs V
GE t sc
(µs)
20
T j
≤ 150 °C
V
CC
≤ 400 V
IGBT29101520M65FSCV I
SC
(A)
130 t
SC
15 100
10 70
I
SC
5 40
0
9 10 11 12 13 14 15 V
10
GE
(V)
Figure 20. Switching times vs collector current t
(ns) V
CC
= 400 V, V
GE
IGBT30101520M65FSTC
= 15 V, R
G
= 12 Ω, T j
= 175°C
10
2
10
1 t d(on) t d(off) t f t r
10
0
0 10 20 30 40 I
C
(A)
Figure 21. Switching times vs gate resistance t
(ns) V
CC
= 400 V, V
GE
= 15 V, I
C
IGBT29101520M65FSTR
= 20 A, T j
= 175 °C t d(off) t f
10
2 t d(on)
10
1 t r
Figure 22. Reverse recovery current vs diode current slope
I rrm
(A)
IGBT29101520M65FRRC
V
CC
= 400 V, V
GE
= 15 V, I
F
= 20 A, T
J
= 175 °C
35
25
10
0
0 40 80 120 R
G
(Ω)
15
5
200 800 1400 2000 di/dt (A/µs)
Figure 23. Reverse recovery time vs diode current slope t rr
(ns)
IGBT20101520M65FRRT
V
CC
= 400 V, V
GE
= 15 V, I
F
= 20 A, T
J
= 175 °C
350
300
250
200
150
200 800 1400 2000 di/dt (A/µs)
Figure 24. Reverse recovery charge vs diode current slope
Q rr
(µC)
IGBT29101520M65FRRQ
V
CC
= 400 V, V
GE
= 15 V, I
F
= 20 A, T
J
= 175 °C
2.1
2.05
2
1.95
200 800 1400 2000 di/dt (A/µs)
DS11370 - Rev 3 page 8/18
DS11370 - Rev 3
Figure 25. Reverse recovery energy vs diode current slope
E rr
(mJ)
IGBT29101520M65FRRE
V
CC
= 400 V, V
GE
= 15 V, I
F
= 20 A, T j
= 175 °C
0.25
0.20
0.15
0.10
0.05
200 800 1400 2000 di/dt (A/µs)
Figure 26. Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
10 -1
0.2
0.1
0.02
10 -2
10 -5
0.01
Single pulse
10 -4 10 -3
0.05
Zth=k Rthj-c
δ=tp/t
10 -2 tp t
10 -1 t p
(s)
Figure 27. Thermal impedance for diode
STGB20M65DF2
Electrical characteristics (curves) page 9/18
STGB20M65DF2
Test circuits
3
Test circuits
Figure 28. Test circuit for inductive load switching
G
C
A A
E
B
L=100 µH
B
G
C
E
D.U.T
+
-
R
G
V
CC
AM01504v1
Figure 29. Gate charge test circuit k k k k k k
AM01505v1
Figure 31. Diode reverse recovery waveform
V
CE
V
G
Figure 30. Switching waveform
90%
10%
I
C
Td(on)
Ton
Tr(Ion)
Tr(Voff)
Tcross
90%
10%
Td(off)
Toff
Tf
90%
10%
AM01506v1
25
DS11370 - Rev 3 page 10/18
4
STGB20M65DF2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS11370 - Rev 3 page 11/18
4.1
STGB20M65DF2
D²PAK (TO-263) type A2 package information
D²PAK (TO-263) type A2 package information
Figure 32. D²PAK (TO-263) type A2 package outline
DS11370 - Rev 3
0079457_A2_25 page 12/18
DS11370 - Rev 3
STGB20M65DF2
D²PAK (TO-263) type A2 package information
Dim.
e1
H
J1
L
L1
L2
R
V2
D
D1
D2
E
E1
E2 e
A
A1 b b2 c c2
Table 7. D²PAK (TO-263) type A2 package mechanical data mm
Typ.
1.14
0.45
1.23
8.95
7.50
Min.
4.40
0.03
0.70
1.10
10.00
8.70
7.30
7.75
1.30
8.90
7.50
2.54
4.88
15.00
2.49
2.29
1.27
1.30
0.40
0°
5.28
15.85
2.69
2.79
1.40
1.75
8°
1.70
0.60
1.36
9.35
8.00
Max.
4.60
0.23
0.93
1.50
10.40
9.10
7.70
Figure 33. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint page 13/18
4.2
D²PAK packing information
Figure 34. D²PAK tape outline
STGB20M65DF2
D²PAK packing information
DS11370 - Rev 3 page 14/18
DS11370 - Rev 3
A
STGB20M65DF2
D²PAK packing information
D
B
Full radius
Figure 35. D²PAK reel outline
T
40mm min. access hole at slot location
Tape slot in core for tape start
2.5mm min.width
C
N
G measured at hub
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
D
D1
Min.
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
Tape
Table 8. D²PAK tape and reel mechanical data
Reel mm
Dim.
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
C
D
A
B
G
N
T
Base quantity
Bulk quantity
Min.
1.5
12.8
20.2
24.4
100
0.35
24.3
mm
AM06038v1
Max.
330
13.2
26.4
30.4
1000
1000 page 15/18
STGB20M65DF2
Revision history
Date
05-Nov-2015
14-Apr-2016
08-Oct-2018
2
3
Table 9. Document revision history
Revision
1
Changes
First release.
Updated Figure 13: "Normalized V(BR)CES vs. junction temperature" .
Minor text changes.
Updated Table 3. Static characteristics .
Minor text changes
DS11370 - Rev 3 page 16/18
STGB20M65DF2
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1
D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
DS11370 - Rev 3 page 17/18
STGB20M65DF2
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© 2018 STMicroelectronics – All rights reserved
DS11370 - Rev 3 page 18/18
