STB11NM60, STP11NM60FP
Datasheet
N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in I²PAK and
TO-220FP packages
TAB
I 2 PAK
1 2
3
G(1)
D(2, TAB)
S(3)
TO-220FP
1
2
3
Features
Order codes
V
DSS
(@ T
Jmax
)
R
DS(on)
max.
STB11NM60-1
650 V 0.45 Ω
STP11NM60FP
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
I
D
11 A
Package
I²PAK
TO-220FP
AM01475v1_noZen
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Product status link
STB11NM60
STP11NM60FP
Product summary
Order code STB11NM60-1
Marking
Package
B11NM60 Obsolete Product(s) - Obsolete Product(s)
Packing Tube
Order code
Marking
Package
Packing
STP11NM60FP
P11NM60FP
TO-220FP
Tube
DS12770 - Rev 1 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STB11NM60, STP11NM60FP
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
V
DS
V
GS
I
D
I
D
I
DM
(2)
P
TOT dv/dt
(3)
Gate-source voltage
Gate- source voltage
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
= 25 °C
= 100 °C
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T
C
= 25 °C)
Storage temperature range T stg
T j
Operating junction temperature range
1. Limited by maximum maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I
SD
≤ 11 A, di/dt ≤ 400 A/μs, V
DD
≤ V
(BR)DSS
, T j
≤ T
JMAX
.
I²PAK
11
160
Value
TO-220FP
600
±30
7
(1)
11
(1)
44
(1)
35
15
2.5
-65 to 150
Unit
V
V
A
A
W
V/ns kV
°C
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
I²PAK
0.78
Value
TO-220FP
3.57
62.5
Unit
°C/W
Table 3. Avalanche characteristics
Obsolete Product(s) - Obsolete Product(s)
I
AR
Parameter Value
Avalanche current, repetitive or non-repetitive (pulse width limited by T jmax
) 5.5
E
AS
Single pulse avalanche energy (starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V) 350
Unit
A mJ
DS12770 - Rev 1 page 2/15
STB11NM60, STP11NM60FP
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Table 4. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, V
DS
= 600 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C
(1)
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= ±30 V
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 5.5 A
1. Defined by design, not subject to production test.
Min.
600
3
Typ.
4
0.4
Max.
1
10
±100
5
0.45
Unit
V
µA
µA nA
V
Ω
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 25 V, f = 1 MHz, V
GS
= 0 V
V
DS
= 0 V to 480 V, V
GS
= 0 V f = 1 MHz open drain
V
DD
= 480 V, I
D
= 11 A,
V
GS
= 0 to 10 V
(see
Figure 14. Test circuit for gate charge behavior
)
-
-
-
Min.
-
-
-
-
-
Typ.
1000
230
25
100
1.6
30
10
15
-
-
-
Max.
-
-
-
-
nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V to 80% V
DSS
DS
increases from 0
Obsolete Product(s) - Obsolete Product(s)
Table 6. Switching times
Ω nC nC
Unit pF pF pF pF
Symbol t d(on) t r t r(Voff) t f t c
Parameter
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Table 5. Dynamic
Test conditions
V
DD
= 300 V, I
D
= 5.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform
)
V
DD
= 480 V, I
D
= 11 A,
R
G
= 4.7 Ω, V
GS
= 10 V (see
Figure 15. Test circuit for inductive load switching and diode recovery times and Figure 18. Switching time waveform
)
Min.
-
-
-
-
-
Typ.
20
20
6
11
19
Max.
-
-
-
-
-
Unit ns ns ns ns ns
DS12770 - Rev 1 page 3/15
STB11NM60, STP11NM60FP
Electrical characteristics
Table 7. Source drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
I
I t
Q t
Q rr rr rr
RRM rr
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width is limited by safe operating area
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%
Test conditions
V
GS
= 0 V, I
SD
= 11 A
I
SD
= 11 A, di/dt = 100 A/µs,
V
DD
= 100 V
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 11 A, di/dt = 100 A/µs,
V
DD
= 100 V, T j
= 150 °C
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
Min.
-
-
-
-
-
-
-
-
19.5
570
5.7
20
Typ.
Max.
11
44
1.5
390
3.8
Unit
A
A
V ns
μC
A ns
μC
A
Obsolete Product(s) - Obsolete Product(s)
DS12770 - Rev 1 page 4/15
STB11NM60, STP11NM60FP
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for I²PAK Figure 2. Thermal impedance for I²PAK
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
GC20521 K
δ =0.5
0.2
10 -1
0.1
10 -2
0.05
0.02
0.01
Single pulse
10 -3
10 -4 10 -3 10 -2 10 -1
Z th
= K*R thJ-c
δ =t p
/ Ƭ t p
Ƭ
10 -0 t p
(s)
Figure 6. Transfer characteristics
DS12770 - Rev 1 page 5/15
Figure 7. Normalized gate threshold voltage vs temperature
STB11NM60, STP11NM60FP
Electrical characteristics (curves)
Figure 8. Static drain-source on-resistance
Figure 9. Normalized on-resistance vs temperature Figure 10. Gate charge vs gate-source voltage
Figure 11. Capacitance variations Figure 12. Source-drain diode forward characteristics
Obsolete Product(s) - Obsolete Product(s)
DS12770 - Rev 1 page 6/15
STB11NM60, STP11NM60FP
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS12770 - Rev 1 page 7/15
4
STB11NM60, STP11NM60FP
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
DS12770 - Rev 1 page 8/15
4.1
I²PAK package information
Figure 19. I²PAK package outline
STB11NM60, STP11NM60FP
I²PAK package information
Obsolete Product(s) - Obsolete Product(s)
0004982_Rev_H
DS12770 - Rev 1 page 9/15
Dim.
e1
E
L
L1
L2
D e
A
A1 b b1 c c2
STB11NM60, STP11NM60FP
I²PAK package information
1.14
0.49
1.23
8.95
2.40
Min.
4.40
2.40
0.61
4.95
10
13
3.50
1.27
Table 8. I²PAK package mechanical data
-
-
-
mm
Typ.
-
-
-
-
-
-
-
-
-
1.70
0.70
1.32
9.35
2.70
Max.
4.60
2.72
0.88
5.15
10.40
14
3.93
1.40
Obsolete Product(s) - Obsolete Product(s)
DS12770 - Rev 1 page 10/15
4.2
STB11NM60, STP11NM60FP
TO-220FP package information
TO-220FP package information
Figure 20. TO-220FP package outline
Obsolete Product(s) - Obsolete Product(s)
7012510_Rev_12_B page 11/15 DS12770 - Rev 1
Dim.
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
D
E
A
B
F
F1
STB11NM60, STP11NM60FP
TO-220FP package information
Table 9. TO-220FP package mechanical data mm
Typ.
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
Obsolete Product(s) - Obsolete Product(s)
DS12770 - Rev 1 page 12/15
STB11NM60, STP11NM60FP
Revision history
Date
03-Oct-2018
Table 10. Document revision history
Version
1
Changes
First release. Part numbers previously included in datasheet DocID10135.
Obsolete Product(s) - Obsolete Product(s)
DS12770 - Rev 1 page 13/15
STB11NM60, STP11NM60FP
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
I²PAK package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Obsolete Product(s) - Obsolete Product(s)
DS12770 - Rev 1 page 14/15
STB11NM60, STP11NM60FP
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
Obsolete Product(s) - Obsolete Product(s)
DS12770 - Rev 1 page 15/15
