STB85NF55T4, STP85NF55
Datasheet
Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET™ II
Power MOSFETs in D²PAK and TO-220 packages
TAB
G(1)
1
3
D(2, TAB)
S(3)
TAB
Features
Type
STB85NF55T4
STP85NF55
V
DS
55 V
R
DS(on) max.
8.0 mΩ
I
D
80 A
TO-220
1
2
3
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
Applications
• Switching applications
AM01475v1_noZen
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique
STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Product status link
STB85NF55T4
STP85NF55
Product summary
Order code STB85NF55T4
Marking
Package
B85NF55
D²PAK
Packing
Order code
Marking
Package
Packing
Tape and reel
STP85NF55
P85NF55
TO-220
Tube
DS2569 - Rev 12 - January 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DS
V
GS
Drain-source voltage
Gate-source voltage
Parameter
I
D
(1)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed) I
DM
(2)
P
TOT
Total power dissipation at T
C
= 25 °C
Derating factor
E
AS
(3) dv/dt (4)
T stg
T j
Single-pulse avalanche energy
Peak diode recovery voltage slope
Storage temperature range
Operating junction temperature range
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting T
J
= 25 °C, I
D
= 40 A, V
DD
= 37.5 V
4. I
SD
≤ 80 A, di/dt ≤ 300 A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ T
JMAX
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
STB85NF55T4, STP85NF55
Electrical ratings
Value
55
±20
80
80
320
300
2.0
980
10
-55 to 175
A
A
A
Unit
V
V
W
W/°C mJ
V/ns
°C
Value
0.5
62.5
Unit
°C/W
°C/W
DS2569 - Rev 12 page 2/18
2
STB85NF55T4, STP85NF55
Electrical characteristics
Electrical characteristics
T
CASE
= 25 °C unless otherwise specified
Table 3. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, V
DS
= 55 V
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 55 V
T
C
= 125 °C (1)
Gate body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 40 A
1. Defined by design, not subject to production test.
Min.
55
2
Typ.
3
6.2
Max.
1
10
±100
4
8.0
Unit
V
µA
µA nA
V mΩ
Symbol g fs
(1)
C iss
C oss
C rss
Q g
Q gs
Q gd
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
1. Pulsed: pulse duration=300 μs, duty cycle 1.5%
Table 4. Dynamic
Test conditions
V
DS
= 15 V, I
D
= 40 A
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 30 V, I
D
= 80 A,
V
GS
= 0 to 10 V
(see
Figure 14. Test circuit for gate charge behavior
)
Min.
-
-
-
-
-
-
Typ.
120
3700
900
310
120
30
45
Max.
150
Unit
S pF pF pF nC nC nC
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 5. Switching times
Test conditions
V
DD
= 30 V, I
D
= 40 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform
)
Min.
-
-
-
-
Typ.
25
100
70
35
Max.
-
-
-
-
Unit ns ns ns ns
DS2569 - Rev 12 page 3/18
STB85NF55T4, STP85NF55
Electrical characteristics
Symbol
V
SD
(1)
t rr
Q rr
I
RRM
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 6. Source-drain diode
Test conditions
I
SD
= 80 A, V
GS
= 0 V
I
SD
= 80 A, di/dt = 100 A/µs,
V
DD
= 25 V, T
J
= 150 °C
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
-
-
-
-
Typ.
Max.
1.5
75
210
Unit
V ns nC
5.5
A
DS2569 - Rev 12 page 4/18
STB85NF55T4, STP85NF55
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GC93850
100
10
1
0.1
0.1
1 10 100 V DS (V)
160
80
0
0
Figure 3. Output characteristics
GC93620
I D
(A)
320
240
4 8 12 16 V
DS
(V)
30
20
10
G
FS
(S)
Figure 5. Trasconductance
GC93640
40
0 4 8 12 16 I
D
(A)
K
Figure 2. Thermal impedance
GC93840
10 -1
10
-2
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Transfer characteristics
GC93630
I D
(A)
256
192
128
64
0
0 2 4 6 8 V
GS
(V)
Figure 6. Static drain-source on-resistance
GC93650
R
DS(on)
(m W )
6.4
6.3
6.2
6.1
6.0
0 20 40 60 80 I
D
(A)
DS2569 - Rev 12 page 5/18
STB85NF55T4, STP85NF55
Electrical characteristics (curves)
Figure 7. Gate charge vs gate-source voltage
GC93660 V
GS
(V)
16
12
8
4
0
0 30 60 90 120 Q g (nC)
Figure 9. Normalized gate threshold voltage vs temperature
GC93680
V GS(th)
(norm)
1.2
1.0
0.8
0.6
0.4
-50 0 50 100 T
J
(°C)
Figure 11. Source-drain diode forward characteristics
GC93700
V SD
(V)
1.2
0.9
0.6
0.3
0 20 40 60 80 I
SD
(A)
Figure 8. Capacitance variations
GC93670
C
(pF)
8000
6000
4000
2000
0 10 20 30 40 V DS (V)
Figure 10. Normalized on-resistance vs temperature
GC93690
R DS(on)
(norm)
1.8
1.4
1.0
0.6
0.2
-50 0 50 100 T
J
(°C)
Figure 12. Normalized V
(BR)DSS
vs temperature
GC93710
V (BR)DSS
(norm)
1.10
1.05
1.00
0.95
0.90
-50 0 50 100 T J (°C)
DS2569 - Rev 12 page 6/18
STB85NF55T4, STP85NF55
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V (BR)DSS
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS2569 - Rev 12 page 7/18
4
STB85NF55T4, STP85NF55
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS2569 - Rev 12 page 8/18
4.1
STB85NF55T4, STP85NF55
D²PAK (TO-263) type A package information
D²PAK (TO-263) type A package information
Figure 19. D²PAK (TO-263) type A package outline
DS2569 - Rev 12
0079457_25 page 9/18
DS2569 - Rev 12
Dim.
e1
H
J1
L
L1
L2
R
V2
D
D1
D2
E
E1
E2 e
A
A1 b b2 c c2
STB85NF55T4, STP85NF55
D²PAK (TO-263) type A package information
Table 7. D²PAK (TO-263) type A package mechanical data mm
Typ.
1.14
0.45
1.23
8.95
7.50
Min.
4.40
0.03
0.70
1.10
10.00
8.30
6.85
7.75
1.30
8.50
7.05
2.54
4.88
15.00
2.49
2.29
1.27
1.30
0.40
0°
5.28
15.85
2.69
2.79
1.40
1.75
8°
1.70
0.60
1.36
9.35
8.00
Max.
4.60
0.23
0.93
1.50
10.40
8.70
7.25
page 10/18
DS2569 - Rev 12
STB85NF55T4, STP85NF55
D²PAK (TO-263) type A package information
Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint page 11/18
4.2
D²PAK packing information
Figure 21. D²PAK tape outline
STB85NF55T4, STP85NF55
D²PAK packing information
DS2569 - Rev 12 page 12/18
DS2569 - Rev 12
A
D
B
Figure 22. D²PAK reel outline
STB85NF55T4, STP85NF55
D²PAK packing information
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
D
D1
Min.
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
Tape
Table 8. D²PAK tape and reel mechanical data
Reel mm
Dim.
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
C
D
A
B
G
N
T
Base quantity
Bulk quantity
Min.
1.5
12.8
20.2
24.4
100
0.35
24.3
mm
AM06038v1
Max.
330
13.2
26.4
30.4
1000
1000 page 13/18
4.3
STB85NF55T4, STP85NF55
TO-220 type A package information
TO-220 type A package information
Figure 23. TO-220 type A package outline
DS2569 - Rev 12
0015988_typeA_Rev_22 page 14/18
DS2569 - Rev 12
Dim.
E e e1
F
H1
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
STB85NF55T4, STP85NF55
TO-220 type A package information
Table 9. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
3.85
2.95
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
page 15/18
STB85NF55T4, STP85NF55
Revision history
Date
21-Jun-2004
01-Oct-2009
10-Jul-2013
17-Jul-2013
16-Jan-2019
10
11
12
Table 10. Document revision history
Version
8
9
Changes
Updated SOA and application.
Added new device in I²PAK
– Minor text changes
– Updated: Section 4: Package mechanical data and Section 5: Packaging mechanical data
– Minor text changes
– Modified: order code for D2PAK
Modified Table 6. Source-drain diode
.
Updated Section 4.1 D²PAK (TO-263) type A package information
and
Section 4.3 TO-220 type A package information
.
Minor text changes.
DS2569 - Rev 12 page 16/18
STB85NF55T4, STP85NF55
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
DS2569 - Rev 12 page 17/18
STB85NF55T4, STP85NF55
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS2569 - Rev 12 page 18/18
