IRF630
Datasheet
N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO
‑
220 package
G(1)
TAB
TO-220
1
2
3
D(2, TAB)
S(3)
AM01475v1_noZen
Features
Order code
IRF630
V
DS
200 V
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Gate charge minimized
R
DS(on)
max.
0.40 Ω
I
D
9 A
Applications
• Switching applications
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated
DC-DC converters.
Product status link
IRF630
Product summary
Order code
Marking
Package
Packing
IRF630
IRF630
TO-220
Tube
DS0668 - Rev 10 - December 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
IRF630
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DDS
V
DGR
V
GS
I
D
I
DM
(1)
P
TOT
E
AS
(2) dv/dt (3)
T stg
T
J
Parameter
Drain-source voltage (V
GS
= 0 V)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Single pulse avalanche energy
Drain-body diode dynamic dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. Starting T
J
= 25 °C, I
D
= 4.5 A
3. I
SD
= 9 A, di/dt = 520 A/μs, V
DD
= 50 V, T
J
< T
Jmax
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
6.5
36
120
110
5.8
Value
200
200
±20
9
-65 to 175
A
A
W mJ
V/ns
Unit
V
V
V
A
°C
Value
1.26
62.5
Unit
°C/W
°C/W
DS0668 - Rev 10 page 2/13
2
IRF630
Electrical characteristics
Electrical characteristics
T
CASE
= 25 °C unless otherwise specified
Table 3. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, V
DS
= 200 V
Zero gate voltage drain current
Gate body leakage current
V
GS
= 0 V, V
DS
= 200 V,
T
C
= 125 °C
(1)
V
DS
= 0 V, V
GS
= 20 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 4.5 A
1. Defined by design, not subject to production test.
Min.
200
Typ.
Max.
1
Unit
V
µA
2 3
0.29
100
±100
4
0.40
µA nA
V
Ω
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 4. Dynamic
V
V
DS
GS
Test conditions
= 25 V, f = 1 MHz,
= 0 V
V
DD
= 160 V, I
D
= 9 A
V
GS
= 0 to 10 V
(see
Figure 13. Test circuit for gate charge behavior
)
-
-
-
Min.
-
-
-
Typ.
370
77
14
11.6
2.2
5.5
-
-
-
Max.
-
-
-
Unit pF pF pF nC nC nC
Symbol t d(on)
Parameter
Turn-on delay time t r
Rise time
Table 5. Switching times
Test conditions
V
DD
= 100 V, I
D
= 4.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 12. Test circuit for resistive load switching times and
Figure 17. Switching time waveform
)
Min.
-
-
Typ.
5.6
Max.
-
Unit ns
2.6
ns
DS0668 - Rev 10 page 3/13
IRF630
Electrical characteristics
Symbol
V
SD
(1)
t rr
Q rr
I
RRM
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 6. Source-drain diode
Test conditions
I
SD
= 9 A, V
GS
= 0 V
I
SD
= 9 A, di/dt = 100 A/µs,
V
DD
= 50 V
(see
Figure 17. Switching time waveform
)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
-
-
-
-
Typ.
118.5
393
6.6
Max.
1.5
Unit
V ns nC
A
DS0668 - Rev 10 page 4/13
IRF630
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG221120181106SOA t p
=10 µs
10 1
Operation in this area is limited by R
DS(on) t p
=100 µs
10 0 t p
=1 ms
10 -1
T
C
= 25 °C,
T J ≤ 175 °C, single pulse
10 -2
10 -1 10 0 10 1 10 2 t p
=10 ms
V
DS
(V)
I
D
(A)
20
Figure 3. Output characteristics
GADG221120181107OCH
V
GS
= 8, 9, 10 V
V
GS
= 7 V
16
V
GS
= 6 V
12
8 V
GS
= 5 V
4
0
0 5 10 15
V
GS
= 4 V
20 V
DS
(V)
Figure 5. Gate charge vs gate-source voltage
V
GS
(V)
12
V
DS
= 160 V, I
D
= 9 A
GADG221120181107QVG
10
8
6
4
2
0
0 2 4 6 8 10 12 Q g
(nC)
Figure 2. Thermal impedance
K
δ = 0.5
GADG221120181106ZTH
10 -1
δ = 0.2
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
10 -2
Single pulse
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Transfer characteristics
4
3
2
I
D
(A)
7
V
DS
= 10 V
6
5
1
0
0 1 2
T
J
GADG221120181221TCH
= 25 °C
T
J
= 150 °C
3 4
T
J
= -55 °C
5 V
GS
(V)
Figure 6. Static drain-source on-resistance
R
DS(on)
(mΩ)
GADG221120181108RID
325
V
GS
= 10 V
300
275
250
0 1 2 3 4 5 6 7 8 9 I
D
(A)
DS0668 - Rev 10 page 5/13
IRF630
Electrical characteristics (curves)
C
(pF)
Figure 7. Capacitance variations
GADG221120181107CVR
10 3
C
ISS
10 2
10 1
10 0
0 50 100 150
C
OSS
C
RSS
V
DS
(V)
Figure 9. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
2.6
V
GS
= 10 V, I
D
= 4.5 A
GADG221120181109RON
2.2
1.8
1.4
1.0
0.6
0.2
-75 -25 25 75 125 175 T j
(°C)
Figure 8. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
1.1
GADG221120181109VTH
I
D
= 250 µA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-75 -25 25 75 125 175 T j
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
1.12
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
0.88
-75 -25 25
GADG221120181109BDV
I
D
= 1 mA
75 125 175 T j
(°C)
Figure 11. Source-drain diode forward characteristics
V
SD
(V)
GADG221120181110SDF
0.9
T
J
= -55 °C
0.8
T
J
= 25 °C
0.7
0.6
0.5
0.4
0 2 4 6
T
J
= 175 °C
8 I
SD
(A)
DS0668 - Rev 10 page 6/13
IRF630
Test circuits
3
Test circuits
Figure 12. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 14. Test circuit for inductive load switching and diode recovery times
Figure 13. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 15. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 16. Unclamped inductive waveform
V (BR)DSS
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 17. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS0668 - Rev 10 page 7/13
4
IRF630
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS0668 - Rev 10 page 8/13
4.1
TO-220 type A package information
Figure 18. TO-220 type A package outline
IRF630
TO-220 type A package information
DS0668 - Rev 10
0015988_typeA_Rev_22 page 9/13
DS0668 - Rev 10
Dim.
E e e1
F
H1
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
IRF630
TO-220 type A package information
Table 7. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
3.85
2.95
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
page 10/13
IRF630
Revision history
Date
09-Sep-2004
03-Aug-2006
12-Dec-2018 10
Table 8. Document revision history
Version
8
9
Changes
Complete version
New template, no content change
Part number IRF630FP has been moved to a separate datasheet and the document has been updated accordingly.
Minor text changes
DS0668 - Rev 10 page 11/13
IRF630
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
DS0668 - Rev 10 page 12/13
IRF630
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS0668 - Rev 10 page 13/13
