STF33N60DM6
Datasheet
N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a TO
‑
220FP package
G(1)
TO-220FP
D(2)
1
2
3
S(3)
AM15572v1_no_tab
Features
Order code
STF33N60DM6
V
DS
600 V
R
DS(on)
max.
128 mΩ
• Fast-recovery body diode
• Lower R
DS(on)
per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
I
D
25 A
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q rr
), recovery time (t rr
) and excellent improvement in R
DS(on)
per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STF33N60DM6
Product summary
Order code STF33N60DM6
Marking
Package
Packing
33N60DM6
TO-220FP
Tube
DS12937 - Rev 2 - July 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STF33N60DM6
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
I
GS
D
Parameter
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
I
DM
(1)
P
TOT
dv/dt (2) di/dt (2) dv/dt (3)
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Peak diode recovery current slope
MOSFET dv/dt ruggedness
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
Storage temperature range T stg
T j
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. I
SD
≤ 25 A, V
DS(peak)
< V
(BR)DSS
, V
DD
= 400 V
3. V
DS
≤ 480 V
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Thermal resistance junction-case
Parameter
Thermal resistance junction-ambient
Value
±25
25
16
80
35
100
1000
100
2.5
-55 to 150
Value
3.6
62.5
Unit
°C/W
°C/W
Unit
V
A
A
A
W
V/ns
A/µs
V/ns kV
°C
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax
)
Single pulse avalanche energy (starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
4
360
Unit
A mJ
DS12937 - Rev 2 page 2/12
2
STF33N60DM6
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4. On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 600 V
Zero gate voltage drain current
Gate-body leakage current
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C
(1)
V
DS
= 0 V, V
GS
= ±25 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 12.5 A
1. Defined by design, not subject to production test.
Min.
600
Typ.
Max.
1
Unit
V
µA
3.25
4
115
100
±5
4.75
128
µA
µA
V mΩ
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
G
Q g
Q
Q gs gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DS
GS
Test conditions
= 100 V, f = 1 MHz,
= 0 V
V
DS
= 0 to 480 V, V
GS
= 0 V f = 1 MHz, I
D
= 0 A
V
DD
= 480 V, I
D
= 25 A,
V
GS
= 0 to 10 V
(see
Figure 14. Test circuit for gate charge behavior
)
Min.
-
-
-
-
-
-
-
-
Typ.
1500
115
3
225
1.8
35
10
15
Max.
-
-
-
-
-
-
-
-
Unit pF pF pF pF
Ω nC nC nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss to 80% V
DSS
.
when V
DS
increases from 0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 300 V, I
D
= 12.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform
)
Min.
-
-
-
-
Typ.
14
9
7
35
Max.
-
-
-
-
Unit ns ns ns ns
DS12937 - Rev 2 page 3/12
STF33N60DM6
Electrical characteristics
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 7. Source drain diode
Test conditions
V
GS
= 0 V, I
SD
= 25 A
I
SD
= 25 A, di/dt = 100 A/µs,
V
DD
= 60 V
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 25 A, di/dt = 100 A/µs,
V
DD
= 60 V, T j
= 150 °C
(see
Figure 15. Test circuit for inductive load switching and diode recovery times
)
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
-
-
-
Min.
-
-
-
-
-
9
210
1.68
16
Typ.
Max.
25
80
1.6
105
0.47
Unit
A
A
V ns
µC
A ns
µC
A
DS12937 - Rev 2 page 4/12
STF33N60DM6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG250220191140SOA t p
=1 µs
10 1 t p
=10 µs
10 0
10 -1
10 -2
10 -1
Operation in this area is limited by R
DS(on)
10 0
T
J
T
C
≤150 °C
=25 °C
V
GS
=10 V single pulse
10 1 10 2 t p
=100 µs t p
=1 ms t
V
DS p
=10 ms
(V)
50
40
30
I
D
(A)
70
60
20
10
0
0
Figure 3. Output characteristics
GADG191220180852OCH
V
GS
= 10 V
V
GS
= 9 V
V
GS
= 8 V
4 8 12
V
GS
= 7 V
V
GS
= 6 V
16 V
DS
(V)
Figure 5. Gate charge vs gate-source voltage
V DS
(V)
600
500
400
300
Q gs
GADG191220180853QVG V GS
(V)
V
DD
= 480 V, I
D
= 25 A
12
V
DS
Q g
10
Q gd
8
6
200
100
0
0
4
2
5 10 15 20 25 30 35 Q
0 g
(nC)
Figure 2. Normalized thermal impedance
GC20521 K
δ =0.5
0.2
10 -1
0.1
10 -2
0.05
0.02
0.01
Single pulse
10 -3
10 -4 10 -3 10 -2 10 -1
Z th
= K*R thJ-c
δ =t p
/ Ƭ t p
Ƭ
10 -0 t p
(s)
50
40
30
I
D
(A)
70
60
20
10
0
4
Figure 4. Transfer characteristics
5
V
DS
= 20 V
6 7
GADG191220180853TCH
8 9 V
GS
(V)
C
(pF)
Figure 6. Capacitance variations
GADG191220180854CVR
10 4
10 3
C
ISS
10 2
10 1
10 0
10 -1 f = 1 MHz
10 0 10 1 10 2
C
OSS
C
RSS
V
DS
(V)
DS12937 - Rev 2 page 5/12
Figure 7. Static drain-source on-resistance
R
DS(on)
(mΩ)
GADG191220180855RID
127
123
119
115
111
107
0 5
V
GS
= 10 V
10 15 20 25 I
D
(A)
Figure 9. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
GADG191220180856VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75 -25
I
D
= 250 µA
25 75 125 T j
(°C)
Figure 11. Output capacitance stored energy
E
OSS
(μJ)
14
GADG191220180857EOS
12
10
8
6
4
2
0
0 100 200 300 400 500 600 V
DS
(V)
STF33N60DM6
Electrical characteristics (curves)
Figure 8. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GADG191220180856RON
2.5
2.0
1.5
1.0
0.5
0.0
-75 -25
V
GS
= 10 V
25 75 125 T j
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
GADG191220180856BDV
1.10
I
D
= 1 mA 1.05
1.00
0.95
0.90
0.85
-75 -25 25 75 125 T j
(°C)
Figure 12. Source-drain diode forward characteristics
V
SD
(V)
1.1
GADG191220180856SDF
T
J
= -50 °C
1.0
0.9
T
J
= 25 °C
0.8
T
J
= 150 °C
0.7
0.6
0.5
0 5 10 15 20 25 I
SD
(A)
DS12937 - Rev 2 page 6/12
STF33N60DM6
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF V
DD
D.U.T.
Figure 14. Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
100 Ω D.U.T.
V
G
AM01469v10
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
A A fast diode
B
B
G
+
_
R
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS12937 - Rev 2 page 7/12
4
4.1
STF33N60DM6
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-220FP package information
Figure 19. TO-220FP package outline
DS12937 - Rev 2
7012510_Rev_13_B page 8/12
DS12937 - Rev 2
Dim.
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
D
E
A
B
F
F1
Table 8. TO-220FP package mechanical data mm
Typ.
Min.
4.40
2.50
2.50
0.45
0.75
1.15
1.15
4.95
2.40
10.00
16.00
28.60
9.80
2.90
15.90
9.00
3.00
STF33N60DM6
TO-220FP package information
Max.
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
10.40
30.60
10.60
3.60
16.40
9.30
3.20
page 9/12
STF33N60DM6
Revision history
Date
25-Feb-2019
01-Jul-2020
Table 9. Document revision history
Version
1
2
Changes
First release.
Updated Table 1. Absolute maximum ratings
and
Table 7. Source drain diode .
DS12937 - Rev 2 page 10/12
STF33N60DM6
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS12937 - Rev 2 page 11/12
STF33N60DM6
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DS12937 - Rev 2 page 12/12
