STMicroelectronics 1.2W audio power amplifier Datasheet
Annonce
Annonce
TS4972
1.2W Audio Power Amplifier with Standby Mode Active High
■
Operating from V
CC
= 2.5V to 5.5V
■
Rail-to-rail output
■ 1.2W output power @ Vcc=5V, THD=1%,
F=1kHz, with 8 Ω load
■
Ultra low consumption in standby mode
(10nA)
■ 75dB PSRR @ 217Hz from 2.5 to 5V
■
Low pop & click
■ Ultra low distortion (0.05%)
■
Unity gain stable
■
Flip-chip package 8 x 300
µ m bumps
Description
The TS4972 is an Audio Power Amplifier capable of delivering 1.6W of continuous RMS ouput power into a 4 Ω load @ 5V.
This Audio Amplifier is exhibiting 0.1% distortion level (THD) from a 5V supply for a Pout = 250mW
RMS. An external standby mode control reduces the supply current to less than 10nA. An internal shutdown protection is provided.
The TS4972 has been designed for high quality audio applications such as mobile phones and to minimize the number of external components.
The unity-gain stable amplifier can be configured by external gain setting resistors.
Applications
■
Mobile phones (cellular / cordless)
■ PDAs
■
Laptop/notebook computers
■ Portable audio devices
Pin Connections (top view)
TS4972JT - FLIP CHIP
6 5 7
Vin
+
Vcc Stdby
8 Vout1 Vout2 4
Vin
1
Gnd Bypass
2 3
TYPICAL APPLICATION SCHEMATIC
Audio
Input
Cin
Rin
1
7
Vin-
-
Cfeed
Rfeed
VCC
6
VCC
Vin+
+
Vout 1 8
Cs
RL
8 Ohms
V CC
Rstb
3 B ypass
5 S tandby
Bias
-
A V = -1
+
Vout 2 4
Cb 2
GND
TS4972
Part Number Temperature Range
TS4972IJT
TS4972EIJT
1
-40, +85°C
1) Lead free Flip-Chip part number
Package
Flip-Chip
Packing
Tape & Reel
Marking
4972
October 2004 Revision 2 1/30
TS4972 Absolute Maximum Ratings
1 Absolute Maximum Ratings
Table 1: Key parameters and their absolute maximum ratings
Symbol Parameter
VCC
V i
T oper
T stg
T j
R thja
Pd
Supply voltage
Input Voltage
2
1
Operating Free Air Temperature Range
Storage Temperature
Maximum Junction Temperature
Thermal Resistance Junction to Ambient
Power Dissipation
ESD Human Body Model
ESD Machine Model
Latch-up Latch-up Immunity
Lead Temperature (soldering, 10sec)
3
1) All voltages values are measured with respect to the ground pin.
2) The magnitude of input signal must never exceed V
CC
+ 0.3V / G
ND
- 0.3V
3) Device is protected in case of over temperature by a thermal shutdown active @ 150°C.
4) Exceeding the power derating curves during a long period, involves abnormal operating condition.
Value
6
G
ND
to V
CC
-40 to + 85
-65 to +150
150
200
Internally Limited
4
2
200
Class A
250
Table 2: Operating Conditions
Symbol Parameter
VCC Supply Voltage
V
ICM
Common Mode Input Voltage Range
VSTB
Standby Voltage Input :
Device ON
Device OFF
RL
R thja
Load Resistor
Thermal Resistance Junction to Ambient
1
1) With Heat Sink Surface = 125mm
2
Value
2.5 to 5.5
G
ND
to V
CC
- 1.2V
V
G
CC
ND
≤ V
STB
- 0.5V
≤
V
≤ 0.5V
STB
≤
V
CC
4 - 32
90
Unit
V
V
°C
°C
°C
°C/W kV
V
°C
Unit
V
V
V
Ω
°C/W
Obsolete Product(s) - Obsolete Product(s)
2/30
Electrical Characteristics TS4972
2 Electrical Characteristics
Table 3: V
CC
= +5V, GND = 0V, T amb
= 25°C (unless otherwise specified)
Symbol
I
I
CC
STANDBY
Voo
Po
THD + N
PSRR
Φ
M
GM
GBP
Parameter
Supply Current
No input signal, no load
Standby Current
1
No input signal, Vstdby = Vcc, RL = 8
Ω
Output Offset Voltage
No input signal, RL = 8 Ω
Output Power
THD = 1% Max, f = 1kHz, RL = 8
Ω
Total Harmonic Distortion + Noise
Po = 250mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8 Ω
Power Supply Rejection Ratio
2 f = 217Hz, RL = 8
Ω,
RFeed = 22K
Ω,
Vripple = 200mV rms
Phase Margin at Unity Gain
R
L
= 8
Ω
, C
L
= 500pF
Gain Margin
R
L
= 8 Ω , C
L
= 500pF
Gain Bandwidth Product
R
L
= 8
Ω
Min.
Typ.
6
10
5
1.2
0.1
75
70
20
2
1) Standby mode is actived when Vstdby is tied to Vcc
2) Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is an added sinus signal to Vcc @ f = 217Hz
Max.
8
1000
20
Unit mA nA mV
W
% dB
Degrees dB
MHz
Obsolete Product(s) - Obsolete Product(s)
3/30
TS4972 Electrical Characteristics
Table 4: V
CC
= +3.3V, GND = 0V, T amb
= 25°C (unless otherwise specified)
3)
Symbol
I
I
CC
STANDBY
Voo
Po
THD + N
PSRR
Φ
M
GM
GBP
Parameter
Supply Current
No input signal, no load
Standby Current
1
No input signal, Vstdby = Vcc, RL = 8 Ω
Output Offset Voltage
No input signal, RL = 8 Ω
Output Power
THD = 1% Max, f = 1kHz, RL = 8 Ω
Total Harmonic Distortion + Noise
Po = 250mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8 Ω
Power Supply Rejection Ratio
2 f = 217Hz, RL = 8
Ω,
RFeed = 22K
Ω,
Vripple = 200mV rms
Phase Margin at Unity Gain
R
L
= 8 Ω , C
L
= 500pF
Gain Margin
R
L
= 8
Ω
, C
L
= 500pF
Gain Bandwidth Product
R
L
= 8 Ω
Min.
Typ.
5.5
10
5
500
0.1
75
70
20
2
1) Standby mode is actived when Vstdby is tied to Vcc
2) Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is an added sinus signal to Vcc @ f = 217Hz
3. All electrical values are made by correlation between 2.6V and 5V measurements
Max.
8
1000
20
Unit mA nA mV mW
% dB
Degrees dB
MHz
Obsolete Product(s) - Obsolete Product(s)
4/30
Electrical Characteristics TS4972
Table 5: V
CC
= 2.6V, GND = 0V, T amb
= 25°C (unless otherwise specified)
Symbol
I
I
CC
STANDBY
Voo
Po
THD + N
PSRR
Φ
M
GM
GBP
Parameter
Supply Current
No input signal, no load
Standby Current
1
No input signal, Vstdby = Vcc, RL = 8
Ω
Output Offset Voltage
No input signal, RL = 8 Ω
Output Power
THD = 1% Max, f = 1kHz, RL = 8
Ω
Total Harmonic Distortion + Noise
Po = 200mW rms, Gv = 2, 20Hz < f < 20kHz, RL = 8 Ω
Power Supply Rejection Ratio
2 f = 217Hz, RL = 8
Ω,
RFeed = 22K
Ω,
Vripple = 200mV rms
Phase Margin at Unity Gain
R
L
= 8 Ω , C
L
= 500pF
Gain Margin
R
L
= 8 Ω , C
L
= 500pF
Gain Bandwidth Product
R
L
= 8 Ω
Min.
Typ.
5.5
10
5
300
0.1
75
70
20
2
1) Standby mode is actived when Vstdby is tied to Vcc
2) Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is an added sinus signal to Vcc @ f = 217Hz
Table 6: Components description
Max.
8
1000
20
Unit mA nA mV mW
% dB
Degrees dB
MHz
Components
Rin
Cin
Rfeed
Cs
Cb
Cfeed
Rstb
Gv
Functional Description
Inverting input resistor which sets the closed loop gain in conjunction with Rfeed. This resistor also forms a high pass filter with Cin (fc = 1 / (2 x Pi x Rin x Cin))
Input coupling capacitor which blocks the DC voltage at the amplifier input terminal
Feed back resistor which sets the closed loop gain in conjunction with Rin
Supply Bypass capacitor which provides power supply filtering
Bypass pin capacitor which provides half supply filtering
Low pass filter capacitor allowing to cut the high frequency
(low pass filter cut-off frequency 1 / (2 x Pi x Rfeed x Cfeed))
Pull-up resistor which fixes the right supply level on the standby pin
Closed loop gain in BTL configuration = 2 x (Rfeed / Rin)
Remarks: Obsolete Product(s) - Obsolete Product(s)
1. All measurements, except PSRR measurements, are made with a supply bypass capacitor Cs =
100µF.
2. External resistors are not needed for having better stability when supply @ Vcc down to 3V. By the way, the quiescent current remains the same.
3. The standby response time is about 1µs.
5/30
TS4972
Figure 1: Open Loop Frequency Response
60
40
20
Phase
0
-20
-40
0.3
1 10
Gain
100
Frequency (kHz)
Vcc = 5V
RL = 8 Ω
Tamb = 25
1000
°
C
10000
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
-220
Figure 2: Open Loop Frequency Response
80
60
40
20
0
-20
-40
0.3
Phase
1
Gain
10 100
Frequency (kHz)
Vcc = 33V
RL = 8 Ω
Tamb = 25 ° C
1000 10000
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
-220
-240
Figure 3: Open Loop Frequency Response
80
60
40
20
0
-20
Phase
Gain
10 100
Frequency (kHz)
1000
Vcc = 2.6V
RL = 8
Ω
Tamb = 25 ° C
10000
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
-220
-240
Electrical Characteristics
Figure 4: Open Loop Frequency Response
60
40
20
Phase
0
-20
-40
0.3
1
Gain
10 100
Vcc = 5V
ZL = 8
Ω
+ 560pF
Tamb = 25 ° C
10000
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
-220
Frequency (kHz)
1000
Figure 5: Open Loop Frequency Response
80
60
40
20
0
-20
-40
0.3
Phase
1
Gain
10 100
Frequency (kHz)
Vcc = 3.3V
ZL = 8
1000
Ω
+ 560pF
Tamb = 25 ° C
10000
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
-220
-240
Figure 6: Open Loop Frequency Response
80
60
40
20
0
-20
-40
0.3
Phase
1
Gain
10 100
Frequency (kHz)
Vcc = 2.6V
ZL = 8
1000
Ω + 560pF
Tamb = 25 ° C
10000
0
-20
-40
-60
-80
-100
-120
-140
-160
-180
-200
-220
-240
6/30
Electrical Characteristics
Figure 7: Open Loop Frequency Response
100
80
60
40
20
Gain
Phase
0
-20
Vcc = 5V
CL = 560pF
Tamb = 25 ° C
-40
0.3
1 10 100
Frequency (kHz)
1000 10000
-80
-100
-120
-140
-160
-180
-200
-220
Figure 8: Open Loop Frequency Response
100
80
60
Phase
Gain
40
20
0
-20
-40
0.3
Vcc = 2.6V
CL = 560pF
Tamb = 25
°
C
1 10 100
Frequency (kHz)
1000 10000
-80
-100
-120
-140
-160
-180
-200
-220
-240
Figure 9: Open Loop Frequency Response
100
80
60
40
20
Gain
Phase
Vcc = 3.3V
CL = 560pF
Tamb = 25 ° C
-40
0.3
1 10 100
Frequency (kHz)
1000 10000
-80
-100
-120
-140
-160
-180
-200
-220
-240
TS4972
Figure 10: Power Supply Rejection Ratio
(PSRR) vs Power supply
-30
-40
-50
Vripple = 200mVrms
Rfeed = 22
Ω
Input = floating
RL = 8 Ω
Tamb = 25
°
C
-60
Vcc = 5V, 3.3V & 2.6V
Cb = 1
µ
F & 0.1
µ
F
-70
-80
10 100 1000
Frequency (Hz)
10000 100000
Figure 11: Power Supply Rejection Ratio
(PSRR) vs Bypass Capacitor
-10
-20
-30
-40
-50
-60
-70
Cb=100 µ F
-80
10 100
Cb=1
µ
F
Cb=10 µ F
Vcc = 5, 3.3 & 2.6V
Rfeed = 22k
Rin = 22k, Cin = 1 µ F
Rg = 100 Ω , RL = 8 Ω
Tamb = 25 ° C
Cb=47 µ F
1000
Frequency (Hz)
10000 100000
Figure 12: Power Supply Rejection Ratio
(PSRR) vs Feedback Resistor
-10
-20
-30
-40
Vcc = 5, 3.3 & 2.6V
Cb = 1 µ F & 0.1
µ F
Vripple = 200mVrms
Input = floating
RL = 8 Ω
Tamb = 25 ° C
Rfeed=110k
Rfeed=47k Ω
Ω
-50
-60
-70
-80
10 100
Rfeed=22k Ω
1000
Frequency (Hz)
Rfeed=10k
Ω
10000 100000
7/30
TS4972
Figure 13: Power Supply Rejection Ratio
(PSRR) vs Feedback Capacitor
Electrical Characteristics
Figure 16: Power Dissipation vs Pout
-10
-20
-30
-40
Vcc = 5, 3.3 & 2.6V
Cb = 1
µ
F & 0.1
µ
F
Rfeed = 22k Ω
Vripple = 200mVrms
Input = floating
RL = 8 Ω
Tamb = 25 ° C
-50
-60
-70
-80
10 100
Cfeed=0
Cfeed=150pF
Cfeed=330pF
Cfeed=680pF
1000
Frequency (Hz)
10000 100000
Figure 14: Power Supply Rejection Ratio
(PSRR) vs Input Capacitor
-10
-20
-30
Cin=1 µ F
Cin=330nF
Cin=220nF
Vcc = 5, 3.3 & 2.6V
Rfeed = 22k Ω , Rin = 22k
Cb = 1
µ
F
Rg = 100 Ω , RL = 8 Ω
Tamb = 25 ° C
-40
-50
-60
10
Cin=100nF
Cin=22nF
100 1000
Frequency (Hz)
10000 100000
Figure 15: Pout @ THD + N = 1% vs Supply
Voltage vs RL
0.8
0.6
0.4
1.4
1.2
Vcc=5V
F=1kHz
THD+N<1%
1.0
0.2
0.0
0.0
0.2
0.4
RL=4
RL=8
Ω
Ω
RL=16 Ω
0.6
0.8
1.0
Output Power (W)
1.2
1.4
1.6
Figure 17: Power Dissipation vs Pout
0.40
0.35
0.30
Vcc=2.6V
F=1kHz
THD+N<1%
0.25
0.20
0.15
0.10
0.05
0.00
0.0
RL=16 Ω
0.1
RL=8 Ω
0.2
Output Power (W)
0.3
RL=4
Ω
0.4
Figure 18: Pout @ THD + N = 10% vs Supply
Voltage vs RL
1.6
1.4
1.2
1.0
Gv = 2 & 10
Cb = 1
µ
F
F = 1kHz
BW < 125kHz
Tamb = 25 ° C
4
Ω
6 Ω
8
Ω
2.0
1.8
1.6
1.4
1.2
Gv = 2 & 10
Cb = 1 µ F
F = 1kHz
BW < 125kHz
Tamb = 25 ° C
4 Ω
6 Ω
8 Ω
0.8
16
Ω
1.0
16 Ω
0.8
0.6
Obsolete Product(s) - Obsolete Product(s)
0.2
32 Ω
0.4
0.2
32
Ω
0.0
2.5
0.0
2.5
3.0
3.5
4.0
Power Supply (V)
4.5
5.0
3.0
3.5
4.0
Power Supply (V)
4.5
5.0
8/30
Electrical Characteristics
Figure 19: Power Dissipation vs Pout
0.2
0.1
0.0
0.0
0.6
0.5
Vcc=3.3V
F=1kHz
THD+N<1%
0.4
0.3
RL=4
RL=8
Ω
0.1
RL=16 Ω
0.2
0.3
0.4
0.5
Output Power (W)
0.6
Ω
0.7
Figure 20: Power Derating Curves
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
No Heat sink
Heat sink surface = 125mm
2
(See demoboard)
25 50 75 100
Ambiant Temperature ( C)
125 150
Figure 21: THD + N vs Output Power
10
1
RL = 4
Ω
Vcc = 5V
Gv = 2
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25
°
C 20kHz
0.1
20Hz
0.1
Output Power (W)
1kHz
1
TS4972
Figure 22: THD + N vs Output Power
10
1
RL = 4 Ω , Vcc = 3.3V
Gv = 2
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
20kHz
0.1
0.01
1E-3
20Hz
0.01
0.1
Output Power (W)
1kHz
Figure 23: THD + N vs Output Power
10
1
RL = 4 Ω , Vcc = 2.6V
Gv = 2
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
20kHz
0.1
0.01
1E-3
20Hz 1kHz
0.01
Output Power (W)
0.1
Figure 24: THD + N vs Output Power
10
1
RL = 4 Ω , Vcc = 5V
Gv = 10
Cb = Cin = 1 µ F
BW < 125kHz, Tamb = 25
°
C
20kHz
1
0.1
20Hz
0.01
0.1
Output Power (W)
1kHz
1
9/30
TS4972
Figure 25: THD + N vs Output Power
10
1
RL = 4 Ω , Vcc = 3.3V
Gv = 10
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
20kHz
20Hz
0.1
0.01
1E-3 0.01
0.1
Output Power (W)
1kHz
Figure 26: THD + N vs Output Power
10
1
RL = 4 Ω , Vcc = 2.6V
Gv = 10
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
20Hz
1
0.1
20kHz
0.01
1E-3
1kHz
0.01
Output Power (W)
0.1
Figure 27: THD + N vs Output Power
10
1
RL = 8 Ω
Vcc = 5V
Gv = 2
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
20kHz
0.1
20Hz
0.1
Output Power (W)
1kHz
1
Electrical Characteristics
Figure 28: THD + N vs Output Power
10
1
RL = 8 Ω , Vcc = 3.3V
Gv = 2
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
20Hz 20kHz
0.1
0.01
1E-3
1kHz
0.01
0.1
Output Power (W)
Figure 29: THD + N vs Output Power
10
1
RL = 8 Ω , Vcc = 2.6V
Gv = 2
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
1
0.1
20Hz 20kHz
1kHz
0.01
1E-3 0.01
Output Power (W)
0.1
Figure 30: THD + N vs Output Power
10
1
RL = 8 Ω
Vcc = 5V
Gv = 10
Cb = Cin = 1 µ F
BW < 125kHz
Tamb = 25
°
C
20kHz
0.1
20Hz
0.01
0.1
Output Power (W)
1kHz
1
10/30
Electrical Characteristics
Figure 31: THD + N vs Output Power
10
1
RL = 8
Ω
, Vcc = 3.3V
Gv = 10
Cb = Cin = 1 µ F
BW < 125kHz
Tamb = 25
°
C
20Hz
0.1
0.01
1E-3
20kHz
1kHz
0.01
0.1
Output Power (W)
Figure 32: THD + N vs Output Power
10
1
RL = 8 Ω , Vcc = 2.6V
Gv = 10
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
20Hz
0.1
0.01
1E-3
20kHz
1kHz
0.01
Output Power (W)
0.1
Figure 33: THD + N vs Output Power
10
1
RL = 8 Ω
Vcc = 5V
Gv = 2
Cb = 0.1
µ
F, Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
20Hz
0.1
1
20kHz
0.1
Output Power (W)
1kHz
1
TS4972
Figure 34: THD + N vs Output Power
10
1
RL = 8 Ω , Vcc = 3.3V
Gv = 2
Cb = 0.1
µ
F, Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
20Hz 20kHz
0.1
0.01
1E-3
1kHz
0.01
0.1
Output Power (W)
Figure 35: THD + N vs Output Power
10
1
RL = 8 Ω , Vcc = 2.6V
Gv = 2
Cb = 0.1
µ
F, Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
1
0.1
20Hz 20kHz
1kHz
0.01
1E-3 0.01
Output Power (W)
0.1
Figure 36: THD + N vs Output Power
10
RL = 8
Ω
, Vcc = 5V, Gv = 10
Cb = 0.1
µ
F, Cin = 1
µ
F
BW < 125kHz, Tamb = 25 ° C
1
20Hz
0.1
20kHz
0.01
0.1
Output Power (W)
1kHz
1
11/30
TS4972
Figure 37: THD + N vs Output Power
10
RL = 8 Ω , Vcc = 3.3V, Gv = 10
Cb = 0.1
µ
F, Cin = 1
µ
F
BW < 125kHz, Tamb = 25
°
C
1
20kHz
0.1
20Hz
0.01
1E-3
1kHz
0.01
0.1
Output Power (W)
Figure 38: THD + N vs Output Power
10
RL = 8
Ω
, Vcc = 2.6V, Gv = 10
Cb = 0.1
µ F, Cin = 1 µ F
BW < 125kHz, Tamb = 25 ° C
1
20kHz
0.1
1kHz
0.01
1E-3 0.01
Output Power (W)
20Hz
0.1
Figure 39: THD + N vs Output Power
10
1
RL = 16 Ω , Vcc = 5V
Gv = 2
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
1
0.1
20Hz 20kHz
0.01
1kHz
0.01
0.1
Output Power (W)
1
Electrical Characteristics
Figure 40: THD + N vs Output Power
10
1
RL = 16 Ω , Vcc = 3.3V
Gv = 2
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
0.1
20Hz 20kHz
0.01
1E-3
1kHz
0.01
Output Power (W)
0.1
Figure 41: THD + N vs Output Power
10
1
RL = 16 Ω
Vcc = 2.6V
Gv = 2
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
0.1
20Hz
20kHz
0.01
1E-3
1kHz
0.01
Output Power (W)
0.1
Figure 42: THD + N vs Output Power
10
1
RL = 16
Ω
, Vcc = 5V
Gv = 10
Cb = Cin = 1 µ F
BW < 125kHz
Tamb = 25
°
C
20kHz
0.1
20Hz
1kHz
0.01
0.1
Output Power (W)
1
12/30
Electrical Characteristics
Figure 43: THD + N vs Output Power
10
1
RL = 16 Ω
Vcc = 3.3V
Gv = 10
Cb = Cin = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
0.1
20Hz
20kHz
1kHz
0.01
1E-3 0.01
Output Power (W)
0.1
Figure 44: THD + N vs Output Power
10
1
RL = 16
Ω
Vcc = 2.6V
Gv = 10
Cb = Cin = 1 µ F
BW < 125kHz
Tamb = 25
°
C
20Hz
0.1
0.01
1E-3
20kHz
1kHz
0.01
Output Power (W)
0.1
Figure 45: THD + N vs Frequency
1
RL = 4 Ω , Vcc = 5V
Gv = 2
Cb = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
0.1
Pout = 1.3W
Pout = 650mW
1000
Frequency (Hz)
10000
TS4972
Figure 46: THD + N vs Frequency
1
RL = 4 Ω , Vcc = 3.3V
Gv = 2
Cb = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
0.1
Pout = 560mW
0.01
20 100
Pout = 280mW
1000
Frequency (Hz)
10000
Figure 47: THD + N vs Frequency
1
RL = 4
Ω
, Vcc = 2.6V
Gv = 2
Cb = 1 µ F
BW < 125kHz
Tamb = 25
°
C
0.1
Pout = 240 & 120mW
0.01
20 100 1000
Frequency (Hz)
Figure 48: THD + N vs Frequency
10000
1
Pout = 1.3W
0.1
0.01
20
RL = 4 Ω , Vcc = 5V
Gv = 10
Cb = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
100 1000
Frequency (Hz)
Pout = 650mW
10000
13/30
TS4972
Figure 49: THD + N vs Frequency
1
Pout = 560mW
RL = 4 Ω , Vcc = 3.3V
Gv = 10
Cb = 1 µ F
BW < 125kHz
Tamb = 25 ° C
0.1
0.01
20 100 1000
Frequency (Hz)
Figure 50: THD + N vs Frequency
Pout = 280mW
10000
1
RL = 4 Ω , Vcc = 2.6V
Gv = 10
Cb = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
0.1
0.01
20
Pout = 240 & 120mW
100 1000
Frequency (Hz)
10000
Figure 51: THD + N vs Frequency
1
Cb = 0.1
µ
F
RL = 8 Ω
Vcc = 5V
Gv = 2
Pout = 920mW
BW < 125kHz
Tamb = 25
°
C
0.1
Electrical Characteristics
Figure 52: THD + N vs Frequency
1
Cb = 0.1
µ F
RL = 8 Ω , Vcc = 5V
Gv = 10
Pout = 920mW
BW < 125kHz
Tamb = 25
°
C
0.1
0.01
20
Cb = 1
µ
F
100 1000
Frequency (Hz)
10000
Figure 53: THD + N vs Frequency
1
Cb = 0.1
µ
F
RL = 8
Ω
, Vcc = 3.3V
Gv = 2
Pout = 420mW
BW < 125kHz
Tamb = 25
°
C
0.1
0.01
20
Cb = 1 µ F
100 1000
Frequency (Hz)
Figure 54: THD + N vs Frequency
1
Cb = 0.1
µ F
10000
RL = 8
Ω
Vcc = 5V
Gv = 2
Pout = 460mW
BW < 125kHz
Tamb = 25
°
C
0.1
Cb = 1 µ F
1000
Frequency (Hz)
10000
Cb = 1 µ F
100 1000
Frequency (Hz)
10000
14/30
Electrical Characteristics
Figure 55: THD + N vs Frequency
1
Cb = 0.1
µ F
RL = 8 Ω , Vcc = 5V
Gv = 10
Pout = 460mW
BW < 125kHz
Tamb = 25 ° C
0.1
0.01
20
Cb = 1
µ
F
100 1000
Frequency (Hz)
10000
Figure 56: THD + N vs Frequency
1
Cb = 0.1
µ F
RL = 8
Ω
, Vcc = 3.3V
Gv = 2
Pout = 210mW
BW < 125kHz
Tamb = 25
°
C
0.1
0.01
20
Cb = 1 µ F
100 1000
Frequency (Hz)
Figure 57: THD + N vs Frequency
10000
1
Cb = 0.1
µ
F
RL = 8 Ω , Vcc = 3.3V
Gv = 10
Pout = 420mW
BW < 125kHz
Tamb = 25
°
C
0.1
Cb = 1
µ
F
1000
Frequency (Hz)
10000
TS4972
Figure 58: THD + N vs Frequency
1
Cb = 0.1
µ
F
RL = 8
Ω
, Vcc = 2.6V
Gv = 2
Pout = 220mW
BW < 125kHz
Tamb = 25
°
C
0.1
0.01
20
Cb = 1 µ F
100 1000
Frequency (Hz)
Figure 59: THD + N vs Frequency
10000
1 Cb = 0.1
µ F
RL = 8 Ω , Vcc = 2.6V
Gv = 10
Pout = 220mW
BW < 125kHz
Tamb = 25 ° C
0.1
0.01
20
Cb = 1
µ
F
100 1000
Frequency (Hz)
Figure 60: THD + N vs Frequency
10000
1 Cb = 0.1
µ F
RL = 8
Ω
, Vcc = 3.3V
Gv = 10
Pout = 210mW
BW < 125kHz
Tamb = 25
°
C
0.1
0.01
20
Cb = 1
µ
F
100 1000
Frequency (Hz)
10000
15/30
TS4972
Figure 61: THD + N vs Frequency
1
Cb = 0.1
µ F
RL = 8
Ω
, Vcc = 2.6V
Gv = 10
Pout = 110mW
BW < 125kHz
Tamb = 25
°
C
0.1
0.01
20
Cb = 1 µ F
100 1000
Frequency (Hz)
Figure 62: THD + N vs Frequency
10000
1
Cb = 0.1µF
RL = 8 Ω , Vcc = 2.6V
Gv = 10
Pout = 110mW
BW < 125kHz
Tamb = 25°C
0.1
0.01
20
Cb = 1µF
100 1000
Frequency (Hz)
Figure 63: THD + N vs Frequency
0.1
10000
Pout = 315mW
0.01
Pout = 630mW
1000
Frequency (Hz)
RL = 16
Ω
, Vcc = 5V
Gv = 2, Cb = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
10000
Electrical Characteristics
Figure 64: THD + N vs Frequency
0.1
Pout = 140mW
0.01
1E-3
20
Pout = 280mW
100 1000
RL = 16
Ω
, Vcc = 3.3V
Gv = 2, Cb = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
10000
Frequency (Hz)
Figure 65: THD + N vs Frequency
0.1
Pout = 80mW
0.01
1E-3
20
Pout = 160mW
100
RL = 16
Ω
, Vcc = 2.6V
Gv = 2, Cb = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
1000
Frequency (Hz)
10000
Figure 66: THD + N vs Frequency
0.1
RL = 16
Ω
, Vcc = 5V
Gv = 10, Cb = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
Pout = 315mW
Pout = 630mW
100 1000
Frequency (Hz)
10000
16/30
Electrical Characteristics TS4972
Figure 67: THD + N vs Frequency
1
RL = 16 Ω , Vcc = 3.3V
Gv = 10, Cb = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
0.1
Pout = 140mW
Pout = 280mW
0.01
20 100 1000
Frequency (Hz)
Figure 68: THD + N vs Frequency
10000
Figure 70: Signal to Noise Ratio vs Power
Supply with Weighted Filter Type A
110
100
RL=16
Ω
RL=8
Ω
RL=4
Ω
90
80
70
60
2.5
3.0
3.5
Vcc (V)
4.0
Gv = 2
Cb = Cin = 1µF
THD+N < 0.4%
Tamb = 25°C
4.5
5.0
Figure 71: Frequency Response Gain vs Cin,
& Cfeed
1
RL = 16 Ω , Vcc = 2.6V
Gv = 10, Cb = 1
µ
F
BW < 125kHz
Tamb = 25 ° C
0.1
0.01
20
Pout = 160mW
100
Pout = 80mW
1000
Frequency (Hz)
10000
10
-5
-10
5
0
-15
-20
-25
10
Cfeed = 330pF
Cfeed = 680pF
Cin = 470nF Cfeed = 2.2nF
Cin = 22nF
Cin = 82nF
100
Frequency (Hz)
Rin = Rfeed = 22k
Ω
Tamb = 25 ° C
1000 10000
Figure 72: Signal to Noise Ratio vs Power
Supply with Unweighted Filter (20Hz to 20kHz)
Figure 69: Signal to Noise Ratio vs Power
Supply with Unweighted Filter (20Hz to 20kHz)
100 90
90
80
RL=16 Ω RL=8 Ω RL=4 Ω
80
RL=8
Ω
70
70 Obsolete Product(s) - Obsolete Product(s)
60
Gv = 2
Cb = Cin = 1µF
60
RL=16
Ω
RL=4
Ω
Gv = 10
Cb = Cin = 1µF
THD+N < 0.4% THD+N < 0.7%
Tamb = 25°C Tamb = 25°C
50
2.5
3.0
3.5
4.0
4.5
5.0
50
2.5
3.0
3.5
4.0
4.5
5.0
Vcc (V)
Vcc (V)
17/30
TS4972
Figure 73: Signal to Noise Ratio vs Power
Supply with Weighted Filter Type A
100
90
RL=8
Ω
80
RL=16
Ω
RL=4
Ω
70
60
2.5
3.0
3.5
Vcc (V)
4.0
Gv = 10
Cb = Cin = 1µF
THD+N < 0.7%
Tamb = 25°C
4.5
5.0
Figure 74: Current Consumption vs Power
Supply Voltage
4
3
2
1
0
0
7
6
Vstandby = 0V
Tamb = 25°C
5
1 2
Vcc (V)
3 4 5
Figure 75: Current Consumption vs Standby
Voltage @ Vcc = 5V
7
6
5
4
3
Vcc = 5V
Tamb = 25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Vstandby (V)
Electrical Characteristics
Figure 76: Current Consumption vs Standby
Voltage @ Vcc = 2.6V
4
3
2
6
5
1
0
0.0
Vcc = 2.6V
Tamb = 25°C
0.5
1.0
1.5
Vstandby (V)
2.0
2.5
Figure 77: Clipping Voltage vs Power Supply
Voltage and Load Resistor
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.5
Tamb = 25 ° C RL = 4
RL = 8
Ω
Ω
RL = 16 Ω
3.0
3.5
4.0
Power supply Voltage (V)
4.5
5.0
Figure 78: Current Consumption vs Standby
Voltage @ Vcc = 3.3V
6
5
4
3
2
1
0
0.0
0.5
Vcc = 3.3V
Tamb = 25°C
1.0
1.5
2.0
Vstandby (V)
2.5
3.0
18/30
Electrical Characteristics
Figure 79: Clipping Voltage vs Power Supply
Voltage and Load Resistor
0.6
0.5
Tamb = 25 ° C
0.4
0.3
0.2
0.1
0.0
2.5
3.0
RL = 4
Ω
RL = 8
Ω
3.5
4.0
RL = 16 Ω
4.5
Power supply Voltage (V)
5.0
TS4972
Obsolete Product(s) - Obsolete Product(s)
19/30
TS4972 Application Information
Figure 80: Demoboard Schematic
VCC
GND
S1
Vcc
S2
GND
VCC
C1
R2
R1
C2
VCC
P1
Neg. Input
P2
Pos. Input
R3
C3
R4
C4
R8
1k
S5
Positive Input mode
VCC
R7
100k
S8
Standby
C11
+
R5
C5
R6
1
7
Vin-
-
Vin+
+
3
5
C8
Bypass
100n
Standby
Bias
6
VC
C
2
G
ND
100µ
C7
100n
Vout 1
U1
8
-
AV = -1
+
Vout 2 4
TS4972
+
C9
470µ
+
C10
470µ
Figure 81: Flip-Chip 300µm Demoboard Components Side
S6
S3
OUT1
S4
GND
S7
GND
OUT2
Obsolete Product(s) - Obsolete Product(s)
20/30
Application Information TS4972
Figure 82: Flip-Chip 300µm Demoboard Top
Solder Layer
The output power is:
Pout
=
( 2 Vout
RMS
R
L
)
2
( W )
For the same power supply voltage, the output power in BTL configuration is four times higher than the output power in single ended configuration.
■ Gain In Typical Application Schematic
(cf. page 1)
In flat region (no effect of Cin), the output voltage of the first stage is:
Figure 83: Flip-Chip 300µm Demoboard
Bottom Solder Layer
R in
For the second stage : Vout2 = -Vout1 (V)
The differential output voltage is:
Vout2
–
Vout1 = 2Vin
R in
The differential gain named gain (Gv) for more convenient usage is:
Gv =
Vout2
–
Vout1
Vin R in
Remark : Vout2 is in phase with Vin and Vout1 is
180 phased with Vin. It means that the positive terminal of the loudspeaker should be connected to Vout2 and the negative to Vout1.
■
Low and high frequency response
In low frequency region, the effect of Cin starts.
Cin with Rin forms a high pass filter with a -3dB cut off frequency.
F
C L
= -------------------------------- H z
2
π
Rin Cin
)
In high frequency region, you can limit the bandwidth by adding a capacitor (Cfeed) in
■
BTL Configuration Principle parallel on Rfeed. Its form a low pass filter with
The TS4972 is a monolithic power amplifier with a
BTL output type. BTL (Bridge Tied Load) means that each end of the load is connected Obsolete Product(s) - Obsolete Product(s) have : a -3dB cut off frequency.
F
CH
=
■
Power dissipation and efficiency
)
Single ended output 1 = Vout1 = Vout (V)
Hypothesis :
Single ended output 2 = Vout2 = -Vout (V)
• Voltage and current in the load are
And Vout1 - Vout2 = 2Vout (V) sinusoidal (Vout and Iout)
• Supply voltage is a pure DC source (Vcc)
21/30
TS4972 Application Information
Regarding the load we have: and
V
O U T
= V
PEAK
sin ω t (V)
Cs has especially an influence on the THD+N in high frequency (above 7kHz) and indirectly on the power supply disturbances.
With 100µF, you can expect similar THD+N performances like shown in the datasheet.
and
I
O UT
=
V
O U T
R
L
P
O U T
=
V
P E A K
2
---------------------- (W)
2R
L
If Cs is lower than 100µF, in high frequency increases, THD+N and disturbances on the power supply rail are less filtered.
To the contrary, if Cs is higher than 100µF, those disturbances on the power supply rail are more filtered.
Then, the average current delivered by the supply voltage is:
I
CC
AVG
= 2
V
P E A K
π
R
L
Cb has an influence on THD+N in lower frequency, but its function is critical on the final result of PSRR with input grounded in lower frequency.
The power delivered by the supply voltage is
Psupply = Vcc Icc
AVG
(W)
Then, the power dissipated by the amplifier is
Pdiss = Psupply - Pout (W)
If Cb is lower than 1µF, THD+N increase in lower frequency (see THD+N vs frequency curves) and the PSRR worsens up
If Cb is higher than 1µF, the benefit on THD+N in lower frequency is small but the benefit on PSRR is substantial (see PSRR vs. Cb curve : fig.12).
P di s s
= ---------------------- P
π
R
L
O U T
–
P
O U T
(W) and the maximum value is obtained when:
---------------------- = 0
P
O U T
Note that Cin has a non-negligible effect on PSRR in lower frequency. Lower is its value, higher is the
PSRR (see fig. 13).
■
Pop and Click performance
Pop and Click performance is intimately linked with the size of the input capacitor Cin and the bias voltage bypass capacitor Cb.
and its value is:
Pdiss max =
2 Vcc
2
π 2
R
L
( W )
Remark : This maximum value is only depending on power supply voltage and load values.
Size of Cin is due to the lower cut-off frequency and PSRR value requested. Size of Cb is due to
THD+N and PSRR requested always in lower frequency.
The efficiency is the ratio between the output power and the power supply
Moreover, Cb determines the speed that the amplifier turns ON. The slower the speed is, the softer the turn ON noise is.
η
=
P
O UT
------------------------ =
Psupp ly
π
V
PEAK
-----------------------
4V
CC
The charge time of Cb is directly proportional to the internal generator resistance 50k
Ω
.
The maximum theoretical value is reached when
Vpeak = Vcc, so
π
----- = 78.5%
4
Then, the charge time constant for Cb is
τ b = 50k
Ω
xCb (s) Obsolete Product(s) - Obsolete Product(s) input (pin 2 & 3) and if we want to minimize, in
■
Decoupling of the circuit amplitude and duration, the output spike on Vout1
(pin 5), Cin must be charged faster than Cb. The
Two capacitors are needed to bypass properly the
TS4972, a power supply bypass capacitor Cs and charge time constant of Cin is
τ
in = (Rin+Rfeed)xCin (s) a bias voltage bypass capacitor Cb.
22/30
Application Information TS4972
Thus we have the relation
τ in <<
τ b (s)
The respect of this relation permits to minimize the pop and click noise.
Remark : Minimize Cin and Cb has a benefit on pop and click phenomena but also on cost and size of the application.
Example : your target for the -3dB cut off frequency is 100 Hz. With Rin=Rfeed=22 k
Ω
,
Cin=72nF (in fact 82nF or 100nF).
With Cb=1µF, if you choose the one of the latest two values of Cin, the pop and click phenomena at power supply ON or standby function ON/OFF will be very small
50 k
Ω x1µF >> 44k
Ω x100nF (50ms >> 4.4ms).
Increasing Cin value increases the pop and click phenomena to an unpleasant sound at power supply ON and standby function ON/OFF.
Why Cs is not important in pop and click consideration ?
Given :
• Load impedance : 8 Ω
• Output power @ 1% THD+N : 0.5W
• Input impedance : 10k
Ω
min.
• Input voltage peak to peak : 1Vpp
• Bandwidth frequency : 20Hz to 20kHz (0, -
3dB)
• Ambient temperature max = 50°C
• SO8 package
First of all, we must calculate the minimum power supply voltage to obtain 0.5W into 8
Ω
. With curves in fig. 15, we can read 3.5V. Thus, the power supply voltage value min. will be 3.5V.
Following the maximum power dissipation equation
Pdiss max =
2 Vcc
2
π 2
R
L
( W )
Hypothesis :
• Cs = 100µF
• Supply voltage = 5V
• Supply voltage internal resistor = 0.1
Ω
• Supply current of the amplifier Icc = 6mA with 3.5V we have Pdissmax=0.31W.
Refer to power derating curves (fig. 20), with
0.31W the maximum ambient temperature will be
100°C. This last value could be higher if you follow the example layout shown on the demoboard
(better dissipation).
The gain of the amplifier in flat region will be:
At power ON of the supply, the supply capacitor is charged through the internal power supply resistor. So, to reach 5V you need about five to ten times the charging time constant of Cs ( τ s =
0.1xCs (s)).
Then, this time equal 50µs to 100µs <<
τ b in the majority of application.
G
V
=
V
O UT PP
--------------------- =
V
IN PP
2 2R
L
P
O UT
------------------------------------ = 5.65
V
IN PP
We have Rin > 10k
Ω
. Let's take Rin = 10k
Ω
, then
Rfeed = 28.25k
Ω
. We could use for Rfeed = 30k
Ω in normalized value and the gain will be Gv = 6.
In lower frequency we want 20 Hz (-3dB cut off frequency). Then:
At power OFF of the supply, Cs is discharged by a constant current Icc. The discharge time from 5V to 0V of Cs is:
C
IN
=
2
π
R inF
CL t
Di s c hC s
=
5Cs
-------------- = 83 ms
Icc
So, we could use for Cin a 1µF capacitor value which gives 16Hz.
Now, we must consider the discharge time of Cb.
a 100k
Ω
resistor. So the discharge time is about
τ b
Disch
≈ 3xCbx100k Ω (s).
In Higher frequency we want 20kHz (-3dB cut off Obsolete Product(s) - Obsolete Product(s)
TS4972 is 2MHz typical and doesn't change when the amplifier delivers power into the load.
In the majority of application, Cb=1µF, then
The first amplifier has a gain of:
τ b
Disch
≈
300ms >> t dischCs
.
Power amplifier design examples Rfeed
----------------- = 3
Rin
23/30
TS4972 Application Information
R7
R8
C5
C6
R1
R4
R6
C7
C9
C10 and the theoretical value of the -3dB cut-off higher frequency is 2MHz/3 = 660kHz.
We can keep this value or limit the bandwidth by adding a capacitor Cfeed, in parallel on Rfeed.
Then:
C
F EED
=
2
π
R
1
--------------------------------------- = 265pF
F EE D
F
C H
So, we could use for Cfeed a 220pF capacitor value that gives 24kHz.
Now, we can calculate the value of Cb with the formula
τ b = 50k
Ω xCb >>
τ in = (Rin+Rfeed)xCin which permits to reduce the pop and click effects.
Then Cb >> 0.8µF.
We can choose for Cb a normalized value of
2.2µF that gives good results in THD+N and
PSRR.
In the following tables, you could find three another examples with values required for the demoboard.
Application n°1 : 20Hz to 20kHz bandwidth and 6dB gain BTL power amplifier
Components:
Designator Part Type
22k / 0.125W
22k / 0.125W
Short Cicuit
100k / 0.125W
Short Circuit
470nF
100µF
100nF
Short Circuit
Short Circuit
S8
P1
10.16mm pitch
3 pts connector 2.54mm pitch
SMB Plug
Application n°2 : 20Hz to 20kHz bandwidth and 20dB gain BTL power amplifier
Components:
Designator Part Type
R7
R8
C5
C6
R1
R4
R6
C7
C9
C10
C12
S1, S2, S6, S7
S8
P1
110k / 0.125W
22k / 0.125W
Short Cicuit
100k / 0.125W
Short Cicuit
470nF
100µF
100nF
Short Circuit
Short Circuit
1µF
2mm insulated Plug
10.16mm pitch
3 pts connector 2.54mm pitch
SMB Plug
R7
R8
C2
C5
R1
R2
R4
R6
C6
C7
C9
Application n°3 : 50Hz to 10kHz bandwidth and 10dB gain BTL power amplifier
Components:
Designator Part Type
33k / 0.125W
Short Circuit
22k / 0.125W
Short Cicuit
100k / 0.125W
Short Cicuit
470pF
150nF
100µF
100nF
Short Circuit
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Application Information TS4972
Designator Part Type
C10
C12
S1, S2, S6, S7
S8
P1
Short Circuit
1µF
2mm insulated Plug
10.16mm pitch
3 pts connector 2.54mm pitch
SMB Plug
Application n°4 : Differential inputs BTL power amplifier
In this configuration, we need to place these components : R1, R4, R5, R6, R7, C4, C5, C12.
We have also : R4 = R5, R1 = R6, C4 = C5.
The differential gain of the amplifier is:
G
VDI F F
= 2
R1
R4
Note : Due to the VICM range (see Operating
Condition), GVDIFF must have a minimum value shown in figure 84.
Figure 84: Minimum Differential Gain vs
Power Supply Voltage
For Vcc=5V, a 20Hz to 20kHz bandwidth and
20dB gain BTL power amplifier you could follow the bill of material below.
Components:
Designator Part Type
R6
R7
R8
C4
R1
R4
R5
C5
C6
C7
C9
C10
C12
S1, S2, S6, S7
S8
P1, P2
110k / 0.125W
22k / 0.125W
22k / 0.125W
110k / 0.125W
100k / 0.125W
Short circuit
470nF
470nF
100µF
100nF
Short Circuit
Short Circuit
1µF
2mm insulated Plug
10.16mm pitch
3 pts connector 2.54mm pitch
SMB Plug
40
35
30
25
20
15
10
2.5
3.0
3.5
4.0
4.5
Power Supply Voltage (V)
5.0
5.5
Obsolete Product(s) - Obsolete Product(s)
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TS4972 Application Information
■
Note on how to use the PSRR curves
(page 7)
We have finished a design and we have chosen the components values :
• Rin=Rfeed=22k Ω
• Cin=100nF
• Cb=1µF
Now, on fig. 13, we can see the PSRR (input grounded) vs frequency curves. At 217Hz we have a PSRR value of -36dB.
In reality we want a value about -70dB. So, we need a gain of 34dB !
Now, on fig. 12 we can see the effect of Cb on the
PSRR (input grounded) vs. frequency. With
Cb=100µF, we can reach the -70dB value.
The process to obtain the final curve (Cb=100µF,
Cin=100nF, Rin=Rfeed=22k
Ω
) is a simple transfer point by point on each frequency of the curve on fig. 13 to the curve on fig. 12.
The measurement result is shown on the next figure.
Figure 85: PSRR changes with Cb
-30
-40
Cin=100nF
Cb=1
µ
F
-50
-60
Cin=100nF
Cb=100 µ F
Vcc = 5, 3.3 & 2.6V
Rfeed = 22k, Rin = 22k
Rg = 100 Ω , RL = 8 Ω
Tamb = 25
°
C
-70
10 100 1000
Frequency (Hz)
10000 100000
How we measure the PSRR ?
Figure 86: PSRR measurement schematic
■
Vripple
Vcc
Cin
Rin
1 Vin-
-
7 Vin+
+
Rfeed
6
Rg
100 Ohms
3 Bypass
5 Standby
Bias
Cb 2
Principle of operation
Vout 1 8
RL
Vs-
-
AV = -1
+
Vout 2 4
Vs+
TS4972
• We fixed the DC voltage supply (Vcc)
• We fixed the AC sinusoidal ripple voltage
(Vripple)
• No bypass capacitor Cs is used
The PSRR value for each frequency is:
PSRR dB
)
= 20 x Log
10
R ms V ri ppl e
---------------------------------------------
+
- Vs)
Remark : The measure of the Rms voltage is not a
Rms selective measure but a full range (2 Hz to
125 kHz) Rms measure. It means that we measure the effective Rms signal + the noise.
■
Note on PSRR measurement
What is the PSRR?
Obsolete Product(s) - Obsolete Product(s)
It's a kind of SVR in a determined frequency range. The PSRR of a device, is the ratio between a power supply disturbance and the result on the output. We can say that the PSRR is the ability of a device to minimize the impact of power supply disturbances to the output.
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Mechanical Data
Figure 87: TS4972 Footprint Recommendation (Non Solder Mask Defined)
500
µ m 500
µ m
Φ
=250
µ m
75µm min.
100
µ m max.
Track
Φ
=400
µ m
150
µ m min.
TS4972
Solder mask opening
Pad in Cu 35
µ m with Flash NiAu (6
µ m, 0.15
µ m)
Figure 88: Top View Of The Daisy Chain Mechanical Data ( all drawings dimensions are in millimeters
Remarks:
Daisy chain sample is featuring pins connection two by two. The schematic above is illustrating the way connecting pins each other. This sample is used for testing continuity on board. PCB needs to be
Order Codes
Part Number
TSDC03IJT
Temperature Range
-40, +85
°
C
Package
J
•
Marking
DC3
27/30
TS4972
Figure 89: Tape & reel specification (top view)
Mechanical Data ize
Y e s
Di
70
µm
+ ize
Y e s
Di
70
µm
+
Obsolete Product(s) - Obsolete Product(s)
28/30
Package Mechanical Data
5.1 Flip-Chip - 8 BUMPS
0.5
0.5
1.6
TS4972
■
Die size : (2.26mm
±
10%) x (1.6mm
±
10%)
■ Die height (including bumps) : 650 µ m ± 50
■
■
Bumps diameter : 315
Silicon thickness : 400
µ m m
± 15
25
µ m m
■ Pitch: 500 µ m ± 10 µ m
Figure 90: Pin Out (top view) Figure 91: Marking (top view)
■
Balls are underneath
Obsolete Product(s) - Obsolete Product(s)
29/30
TS4972
Revision History
Date
January 2003
October 2004
Revision
1
2
Package Mechanical Data
Description of Changes
First Release
Update Mechanical Data for Flip-Chip package
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
Obsolete Product(s) - Obsolete Product(s)
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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