STMicroelectronics TS4995 Datasheet
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TS4995
1.2 W fully differential audio power amplifier with selectable standby and 6 dB fixed gain
Features
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Differential inputs
90 dB PSRR @ 217 Hz with grounded inputs
Operates from V
CC
= 2.5 V to 5.5 V
1.2 W rail-to-rail output power @ V
CC
=5 V,
THD+N=1%, F=1 kHz, with an 8
Ω
load
6 dB integrated fixed gain
Ultra-low consumption in standby mode
(10 nA)
Selectable standby mode (active low or active high)
Ultra-fast startup time: 10 ms typ. at V
CC
=3.3 V
Available in 9-bump flip chip (300 mm bump diameter)
Ultra-low pop and click
Applications
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Mobile phones (cellular / cordless)
PDAs
Laptop / notebook computers
Portable audio devices
Description
The TS4995 is an audio power amplifier capable of delivering 1.2 W of continuous RMS output power into an 8
Ω
load at 5 V. Thanks to its differential inputs, it exhibits outstanding noise immunity.
An external standby mode control reduces the supply current to less than 10 nA. A STBY MODE pin allows the standby pin to be active high or
low. An internal thermal shutdown protection is also provided, making the device capable of sustaining short-circuits.
TS4995 - Flip chip 9
Pin connections (top view)
The TS4995 features an internal fixed gain at 6dB which reduces the number of external components on the application board.
The device is equipped with common mode feedback circuitry allowing outputs to be always biased at V
CC mode voltage.
/2 regardless of the input common
The TS4995 is specifically designed for high quality audio applications such as mobile phones and requires few external components.
March 2008 Rev 3 1/26
www.st.com
26
Contents
Contents
TS4995
Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3
Typical application schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Differential configuration principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Common mode feedback loop limitations . . . . . . . . . . . . . . . . . . . . . . . . . 17
Low frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Power dissipation and efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Single-ended input configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/26
TS4995
1
Absolute maximum ratings and operating conditions
Absolute maximum ratings and operating conditions
Table 1.
Absolute maximum ratings (AMR)
Symbol Parameter
V
CC
V in
T oper
T stg
T j
R thja
P diss
Supply voltage
Input voltage
(2)
(1)
Operating free air temperature range
Storage temperature
ESD
Maximum junction temperature
Thermal resistance junction to ambient
(3)
Power dissipation
MM: machine model
(4)
HBM: human body model
(5)
Latch-up Latch-up immunity
Lead temperature (soldering, 10sec)
Value
6
GND to V
CC
-40 to + 85
-65 to +150
150
200
Internally limited
200
1.5
200
260
1.
All voltage values are measured with respect to the ground pin.
2.
The magnitude of input signal must never exceed V
CC
+ 0.3 V / GND - 0.3 V.
3.
The device is protected in case of over temperature by a thermal shutdown activated at 150° C.
4.
Machine model: a 200 pF cap is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5
Ω
), done for all couples of pin combinations with other pins floating.
5.
Human body model: 100 pF discharged through a 1.5 k
Ω resistor between two pins of the device, done for all couples of pin combinations with other pins floating.
Unit
V
V
°C
°C
°C
°C/W
W
V kV mA
°C
Table 2.
Symbol
Operating conditions
Parameter Value Unit
V
V
V
CC
SM
STBY
T
SD
R
L
R thja
Supply voltage
Standby mode voltage input:
Standby Active LOW
Standby Active HIGH
Standby voltage input:
Device ON (V
SM
=GND) or Device OFF (V
SM
=V
CC
)
Device OFF (V
SM
=GND) or Device ON (V
SM
=V
CC
)
Thermal shutdown temperature
Load resistor
Thermal resistance junction to ambient
2.5 to 5.5
V
V
SM
SM
=GND
=V
CC
1.5
≤
GND
≤
STBY
STBY
≤
V
CC
0.4
(1)
150
≥
4
100
1.
The minimum current consumption (
I
STBY temperature range.
) is guaranteed when V
STB Y
= GND or V
CC
(the supply rails) for the whole
V
V
V
°C
Ω
°C/W
3/26
Typical application schematics
2 Typical application schematics
Table 3.
External component descriptions
Component Functional description
C s
C b
C in
Supply bypass capacitor that provides power supply filtering.
Bypass capacitor that provides half supply filtering.
Optional input capacitor that forms a high pass filter together with R in
.
(F cl
= 1 / (2 x
π
x R in
x C in
)
Figure 1.
Typical application
VCC
TS4995
Vin-
P1
P2
Vin+
TS4995
Optional
Cin1
330nF
Cin2
3
Vin-
1
Vin+
330nF
1uF
Cbypass1
8
BYP ASS
BIAS
STDBY
STBY
STDBY MODE
+
Cs1
1uF
TS4995 FlipChip
Vo7
Vo+ 5
8 Ohms
VCC
4/26
TS4995 Electrical characteristics
Table 4.
Symbol
V
CC
= +5V, GND = 0V, T amb
= 25°C (unless otherwise specified)
Parameter Test conditions Min.
Typ. Max.
Unit
I
I
CC
STBY
Supply current
Standby current
No input signal, no load
No input signal, V
STBY
= V
SM
No input signal, V
STBY
= V
SM
= GND, R
= V
CC
, R
L
L
= 8
Ω
= 8
Ω
4
10
7
1000 mA nA
V oo
Differential output offset voltage
No input signal, R
L
= 8
Ω
0.1
10 mV
V
IC
P o
Input common mode voltage
Output power
THD + N
Total harmonic distortion + noise
THD = 1% Max, F= 1kHz, R
P o
= 850mW rms, 20Hz F
L
≤
= 8
Ω
20kHz, R
L
= 8
Ω
PSRR
IG
Power supply rejection ratio with inputs grounded
(1)
CMRR Common mode rejection ratio
F = 217Hz, R = 8
Ω,
C in
= 4.7µF, C b
=1µF
V ripple
= 200mV
PP
F = 217Hz, R
L
= 8
Ω,
C in
= 4.7µF, C b
=1µF
V ic
= 200mV
PP
SNR
GBP
V
N
Signal-to-noise ratio
Gain bandwidth product
Output voltage noise
A-weighted filter
R
L
= 8
Ω,
THD +N < 0.7%, 20Hz F 20kHz
R
L
= 8
Ω
20Hz F
≤
L
= 8
Ω
Unweighted
A-weighted
Unweighted, standby
A-weighted, standby
0
0.8
75
(2)
1.2
0.5
90
60
100
2
11
7
3.5
1.5
4.5
dB dB dB
MHz
µV
V
W
%
RMS
Z in
t
WU
Input impedance
Gain mismatch
Wake-up time
(3)
C b
=1µF
15
5.5
20
6
15
1.
Dynamic measurements - 20*log(rms(V out
)/rms (V ripple
)). V ripple
is the super-imposed sinus signal relative to V
CC
.
2.
Guaranteed by design and evaluation.
3.
Transition time from standby mode to fully operational amplifier.
25 k
Ω
6.5
dB ms
5/26
Electrical characteristics TS4995
Table 5.
V
CC
= +3.3V (all electrical values are guaranteed with correlation measurements at
2.6V and 5V), GND = 0V, T amb
= 25°C (unless otherwise specified)
Parameter Test conditions Min.
Typ. Max.
Unit Symbol
I
I
CC
STBY
Supply current
Standby current
No input signal, no load
No input signal, V
STBY
= V
SM
No input signal, V
STBY
= V
SM
= GND, R
= V
CC
, R
L
L
= 8
Ω
= 8
Ω
3
10
7
1000 mA nA
V oo
Differential output offset voltage
No input signal, R
L
= 8
Ω
0.1
10 mV
V
IC
P o
Input common mode voltage
Output power
THD + N
Total harmonic distortion + noise
THD = 1% max, F= 1kHz, R
P o
= 300mW rms, 20Hz F
L
≤
= 8
Ω
20kHz, R
L
= 8
Ω
PSRR
IG
Power supply rejection ratio with inputs grounded
(1)
CMRR Common mode rejection ratio
F = 217Hz, R = 8
Ω,
C in
= 4.7µF, C b
=1µF
V ripple
= 200mV
PP
F = 217Hz, R
L
= 8
Ω,
C in
= 4.7µF, C b
=1µF
V ic
= 200mV
PP
SNR
GBP
V
N
Signal-to-noise ratio
Gain bandwidth product
Output voltage noise
A-weighted filter
R
L
= 8
Ω,
THD +N < 0.7%, 20Hz F 20kHz
R
L
= 8
Ω
20Hz F
≤
L
= 8
Ω
Unweighted
A weighted
Unweighted, standby
A weighted, standby
0.4
300
75
(2)
500
0.5
90
60
100
2
11
7
3.5
1.5
2.3
mW dB dB dB
MHz
µV
V
%
RMS
Z in
t
WU
Input impedance
Gain mismatch
Wake-up time
(3)
C b
=1µF
15
5.5
20
6
10
1.
Dynamic measurements - 20*log(rms(V out
)/rms (V ripple
)). V ripple
is the super-imposed sinus signal relative to V
CC
.
2.
Guaranteed by design and evaluation.
3.
Transition time from standby mode to fully operational amplifier.
25 k
Ω
6.5
dB ms
6/26
TS4995 Electrical characteristics
Table 6.
Symbol
V
CC
= +2.6V, GND = 0V, T amb
= 25°C (unless otherwise specified)
Parameter Test conditions Min.
Typ. Max.
Unit
I
I
CC
STBY
Supply current
Standby current
No input signal, no load
No input signal, V
STBY
= V
No input signal, V
STBY
= V
SM
= GND, R
L
= 8
Ω
SM
= V
CC
, R
L
= 8
Ω
V oo
Differential output offset voltage
No input signal, R
L
= 8
Ω
V
IC
P o
Input common mode voltage
Output power
THD + N
Total harmonic distortion + noise
THD = 1% max, F= 1kHz, R
L
= 8
Ω
Po = 225mW rms, 20Hz F
≤
L
= 8
Ω
PSRR
IG
CMRR
SNR
GBP
V
N
Power supply rejection ratio with inputs grounded
(1)
Common mode rejection ratio
F = 217Hz, R = 8
Ω,
C in
= 4.7
μ
F, C b
=1µF
V ripple
= 200mV
PP
F = 217Hz, R
L
= 8
Ω,
C in
= 4.7
μ
F, C b
=1µF
V ic
= 200mV
PP
Signal-to-noise ratio
Gain bandwidth product
Output voltage noise
A-weighted filter
R
L
= 8
Ω,
THD +N < 0.7%, 20Hz
≤
F
≤
20kHz
R
L
= 8
Ω
20Hz F
≤
L
= 8
Ω
Unweighted
A weighted
Unweighted, standby
A weighted, standby
0.6
200
75
(2)
3
10
0.1
300
0.5
90
60
100
2
11
7
3.5
1.5
7
1000
10
1.5
mA mV
V mW
MHz
µV nA
% dB dB dB
RMS
Z
in t
WU
Input impedance
Gain mismatch
Wake-up time
(3)
C b
=1µF
15
5.5
20
6
10
25
6.5
1.
Dynamic measurements - 20*log(rms(V out
)/rms (V ripple
)). V ripple
is the super-imposed sinus signal relative to V
CC
.
2.
Guaranteed by design and evaluation.
3.
Transition time from standby mode to fully operational amplifier.
k
Ω dB ms
7/26
Electrical characteristics
Figure 2.
THD+N vs. output power
10
1
RL = 8
Ω
G = 6dB
F = 20Hz
Cb = 1
μ
F
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
0.1
Figure 3.
THD+N vs. output power
10
1
RL = 8
Ω
G = 6dB
F = 20Hz
Cb = 0
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
0.1
TS4995
0.01
1E-3 0.01
0.1
Output power (W)
Figure 4.
THD+N vs. output power
10
1
RL = 16
Ω
G = 6dB
F = 20Hz
Cb = 1
μ
F
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
0.1
1
0.01
1E-3 0.01
0.1
Output power (W)
Figure 5.
THD+N vs. output power
10
1
RL = 16
Ω
G = 6dB
F = 20Hz
Cb = 0
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
0.1
1
0.01
1E-3 0.01
0.1
Output power (W)
Figure 6.
THD+N vs. output power
10
RL = 4
Ω
G = 6dB
F = 1kHz
Cb = 1
μ
F
BW < 125kHz
Tamb = 25
°
C
1
Vcc=5V
Vcc=3.3V
Vcc=2.6V
1
0.01
1E-3 0.01
0.1
Output power (W)
Figure 7.
THD+N vs. output power
10
RL = 4
Ω
G = 6dB
F = 1kHz
Cb = 0
BW < 125kHz
Tamb = 25
°
C
1
Vcc=5V
Vcc=3.3V
Vcc=2.6V
1
0.1
1E-3 0.01
0.1
Output power (W)
1
0.1
1E-3 0.01
0.1
Output power (W)
1
8/26
TS4995
Figure 8.
THD+N vs. output power
10
1
RL = 8
Ω
G = 6dB
F = 1kHz
Cb = 1
μ
F
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
0.1
Electrical characteristics
Figure 9.
THD+N vs. output power
10
1
RL = 8
Ω
G = 6dB
F = 1kHz
Cb = 0
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
0.1
0.01
1E-3 0.01
0.1
Output power (W)
Figure 10.
THD+N vs. output power
10
1
RL = 16
Ω
G = 6dB
F = 1kHz
Cb = 1
μ
F
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
0.1
1
0.01
1E-3 0.01
0.1
Output power (W)
Figure 11.
THD+N vs. output power
10
1
RL = 16
Ω
G = 6dB
F = 1kHz
Cb = 0
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
0.1
1
0.01
1E-3 0.01
0.1
Output power (W)
Figure 12.
THD+N vs. output power
10
RL = 4
Ω
G = 6dB
F = 20kHz
Cb = 1
μ
F
BW < 125kHz
Tamb = 25
°
C
1
Vcc=5V
Vcc=3.3V
Vcc=2.6V
1
0.01
1E-3 0.01
0.1
Output power (W)
Figure 13.
THD+N vs. output power
10
RL = 4
Ω
G = 6dB
F = 20kHz
Cb = 0
BW < 125kHz
Tamb = 25
°
C
1
Vcc=5V
Vcc=3.3V
Vcc=2.6V
1
0.1
1E-3 0.01
0.1
Output power (W)
1
0.1
1E-3 0.01
0.1
Output power (W)
1
9/26
Electrical characteristics
Figure 14.
THD+N vs. output power
10
1
RL = 8
Ω
G = 6dB
F = 20kHz
Cb = 1
μ
F
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
Figure 15.
THD+N vs. output power
10
1
RL = 8
Ω
G = 6dB
F = 20kHz
Cb = 0
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
TS4995
0.1
1E-3 0.01
0.1
Output power (W)
Figure 16.
THD+N vs. output power
10
1
RL = 16
Ω
G = 6dB
F = 20kHz
Cb = 1
μ
F
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
0.1
1
0.1
1E-3 0.01
0.1
Output power (W)
Figure 17.
THD+N vs. output power
10
1
RL = 16
Ω
G = 6dB
F = 20kHz
Cb = 0
BW < 125kHz
Tamb = 25
°
C
Vcc=5V
Vcc=3.3V
Vcc=2.6V
0.1
1
0.01
1E-3 0.01
0.1
Output power (W)
Figure 18.
THD+N vs. frequency
10
1
RL = 4
Ω
G = 6dB
Cb = 1
μ
F
BW < 125kHz
Tamb = 25
°
C
Vcc=5V, Po=1000mW
Vcc=2.6V, Po=280mW
1
0.01
1E-3 0.01
0.1
Output power (W)
Figure 19.
THD+N vs. frequency
10
1
RL = 4
Ω
G = 6dB
Cb = 0
BW < 125kHz
Tamb = 25
°
C
Vcc=5V, Po=1000mW
Vcc=2.6V, Po=280mW
1
0.1
0.1
Vcc=3.3V, Po=500mW Vcc=3.3V, Po=500mW
0.01
0.01
100 1000
Frequency (Hz)
10000 100 1000
Frequency (Hz)
10000
10/26
TS4995
Figure 20.
THD+N vs. frequency
10
1
RL = 8
Ω
G = 6dB
Cb = 1
μ
F
BW < 125kHz
Tamb = 25C Vcc=2.6V, Po=225mW
Vcc=5V, Po=850mW
0.1
Vcc=3.3V, Po=300mW
0.01
100 1000
Frequency (Hz)
10000
Figure 22.
THD+N vs. frequency
10
1
RL = 16
Ω
G = 6dB
Cb = 1
μ
F
BW < 125kHz
Tamb = 25C
Vcc=5V, Po=500mW
0.1
Vcc=2.6V, Po=125mW
Electrical characteristics
Figure 21.
THD+N vs. frequency
10
1
RL = 8
Ω
G = 6dB
Cb = 0
BW < 125kHz
Tamb = 25C
Vcc=2.6V, Po=225mW
Vcc=5V, Po=850mW
0.1
Vcc=3.3V, Po=300mW
0.01
100 1000
Frequency (Hz)
Figure 23.
THD+N vs. frequency
10
1
RL = 16
Ω
G = 6dB
Cb = 0
BW < 125kHz
Tamb = 25C
Vcc=5V, Po=500mW
Vcc=2.6V, Po=125mW
0.1
10000
0.01
Vcc=3.3V, Po=225mW
100 1000
Frequency (Hz)
10000
0.01
Vcc=3.3V, Po=225mW
100 1000
Frequency (Hz)
10000
Figure 24.
Output power vs. power supply voltage
10
1
RL = 16
Ω
G = 6dB
Cb = 1
μ
F
BW < 125kHz
Tamb = 25C
Vcc=5V, Po=500mW
Vcc=2.6V, Po=125mW
0.1
0.01
Vcc=3.3V, Po=225mW
100 1000
Frequency (Hz)
10000
Figure 25.
Output power vs. power supply voltage
2,4
2,2
2,0
1,8
1,6
1,4
1,2
1,0
0,8
0,6
0,4
0,2
0,0
2,5
Cb = 1
μ
F
F = 1kHz
BW < 125 kHz
Tamb = 25
°
C
3,0 3,5
4
Ω
4,0
Vcc (V)
4,5
8
Ω
16
Ω
5,0
32
Ω
5,5
11/26
Electrical characteristics TS4995
Figure 26.
Output power vs. power supply voltage
2,0
1,8
1,6
1,4
1,2
1,0
0,8
0,6
0,4
0,2
0,0
2,5
Cb = 1
μ
F
F = 1kHz
BW < 125 kHz
Tamb = 25
°
C
3,0 3,5
4
Ω
8
4,0
Vcc (V)
4,5
Ω
16
Ω
5,0
32
Ω
5,5
Figure 27.
Power derating curves
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
No Heat sink
Heat sink surface
≈
100mm
2
25 50 75
Ambiant Temperature (
°
C)
100 125
Figure 28.
Output power vs. load resistance Figure 29.
Power dissipation vs. output power
2000
1800
1600
1400
1200
Vcc=5.5V
Vcc=5V
Vcc=4.5V
Vcc=4V
THD+N = 1%
F = 1kHz
Cb = 1
μ
F
BW < 125kHz
Tamb = 25
°
C
1000
800
600
Vcc=3.3V
Vcc=2.6V
400
200
0
4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
Load Resistance (
Ω
)
0.8
0.6
0.4
1.4
1.2
Vcc=5V
F=1kHz
THD+N<1%
1.0
0.2
0.0
0.0
0.2
RL=4
RL=8
Ω
Ω
0.4
RL=16
Ω
0.6
0.8
1.0
Output Power (W)
1.2
1.4
1.6
Figure 30.
Power dissipation vs. output power Figure 31.
Power dissipation vs. output power
0.6
0.5
Vcc=3.3V
F=1kHz
THD+N<1%
0.4
0.3
0.2
0.1
0.0
0.0
RL=4
Ω
RL=8
Ω
0.1
RL=16
Ω
0.2
0.3
0.4
0.5
Output Power (W)
0.6
0.7
0.40
0.35
Vcc=2.6V
F=1kHz
THD+N<1%
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0
RL=16
Ω
0.1
RL=8
Ω
0.2
Output Power (W)
0.3
RL=4
Ω
0.4
12/26
TS4995
Figure 32.
PSSR vs. frequency
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
20
Vcc = 2.6V
Vripple = 200mVpp
RL
≥
8
Ω
G = 6dB, Cin = 4.7
μ
F
Inputs grounded
Tamb = 25
°
C
Cb=1
100
μ
F, 0.47
μ
F, 0.1
μ
F
Cb=0
1000
Frequency (Hz)
Figure 34.
PSSR vs. frequency
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
20
Vcc = 3.3V
Vripple = 200mVpp
RL
≥
8
Ω
G = 6dB, Cin = 4.7
μ
F
Inputs grounded
Tamb = 25
°
C
Cb=1
μ
F, 0.47
100
μ
F, 0.1
μ
F
Cb=0
1000
Frequency (Hz)
Figure 36.
PSSR vs. frequency
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
20
Vcc = 5V
Vripple = 200mVpp
RL
≥
8
Ω
G = 6dB, Cin = 4.7
μ
F
Inputs grounded
Tamb = 25
°
C
Cb=1
μ
F, 0.47
100
μ
F, 0.1
μ
F
Cb=0
1000
Frequency (Hz)
Electrical characteristics
10000
Figure 33.
PSSR vs. frequency
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
20
Vcc = 2.6V
Vripple = 200mVpp
RL
≥
8
Ω
G = 6dB
Inputs floating
Tamb = 25
°
C
100
Cb=0
Cb=1
μ
1000
Frequency (Hz)
F, 0.47
μ
F, 0.1
μ
F
10000
10000
Figure 35.
PSSR vs. frequency
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
20
Vcc = 3.3V
Vripple = 200mVpp
RL
≥
8
Ω
G = 6dB
Inputs floating
Tamb = 25
°
C
100
Cb=0
Cb=1
1000
Frequency (Hz)
μ
F, 0.47
μ
F, 0.1
μ
F
10000
10000
Figure 37.
PSSR vs. frequency
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
20
Vcc = 5V
Vripple = 200mVpp
RL
≥
8
Ω
G = 6dB
Inputs floating
Tamb = 25
°
C
100
Cb=0
Cb=1, 0.47, 0.1
1000
Frequency (Hz)
μ
F
10000
13/26
Electrical characteristics TS4995
Figure 38.
PSSR vs. common mode input voltage
20
0
-20
Vcc = 5V
Vripple = 200mVpp
F = 217Hz
G = 6dB
RL
≥
8
Ω
Tamb = 25°C
-40
Cb=0
-60
Cb=0.1
μ
F
Cb=0.47
μ
F
Cb=1
μ
F
-80
-100
0 1 2 3
Common Mode Input Voltage (V)
4 5
Figure 39.
PSSR vs. common mode input voltage
20
0
-20
Vcc = 3.3V
Vripple = 200mVpp
F = 217Hz
G = 6dB
RL
≥
8
Ω
Tamb = 25°C
-40
Cb=0
-60
Cb=0.1
μ
F
Cb=0.47
μ
F
Cb=1
μ
F
-80
-100
0.0
0.6
1.2
1.8
2.4
Common Mode Input Voltage (V)
3.0
Figure 40.
PSSR vs. common mode input voltage
20
0
-20
Vcc = 2.6V
Vripple = 200mVpp
F = 217Hz
G = 6dB
RL
≥
8
Ω
Tamb = 25°C
-40
Cb=0
-60
-80
-100
0.0
0.5
1.0
1.5
Cb=0.1
Cb=0.47
Cb=1
2.0
Common Mode Input Voltage (V)
μ
μ
F
F
μ
F
2.5
Figure 41.
CMRR vs. frequency
0
-10
-20
-30
Vcc = 5V
G = 6dB
Vic = 200mVpp
RL
≥
8
Ω
Cin = 470
μ
F
Tamb = 25
°
C
-40
-50
-60
-70
-80
100
Cb=1
μ
F
Cb=0.47
μ
F
Cb=0.1
Cb=0
μ
F
1000
Frequency (dB)
10000
Figure 42.
CMRR vs. frequency
-60
-70
-80
0
-10
-20
-30
Vcc = 3.3V
G = 6dB
Vic = 200mVpp
RL
≥
8
Ω
Cin = 470
μ
F
Tamb = 25
°
C
-40
-50
100
Cb=1
μ
F
Cb=0.47
μ
F
Cb=0.1
Cb=0
μ
F
1000
Frequency (dB)
10000
Figure 43.
CMRR vs. frequency
-60
-70
-80
0
-10
-20
-30
Vcc = 2.6V
G = 6dB
Vic = 200mVpp
RL
≥
8
Ω
Cin = 470
μ
F
Tamb = 25
°
C
-40
-50
100
Cb=1
μ
F
Cb=0.47
μ
F
Cb=0.1
Cb=0
μ
F
1000
Frequency (dB)
10000
14/26
TS4995 Electrical characteristics
Figure 44.
CMRR vs. common mode input voltage
-10
-20
-30
20
10
0
Vic = 200mVpp
F = 217Hz
Cb = 1
μ
F
RL
≥
8
Ω
Tamb = 25°C
Vcc=2.6V
Vcc=5V
-40
-50
-60
-70
-80
Vcc=3.3V
-90
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Common Mode Input Voltage (V)
Figure 45.
CMRR vs. common mode input voltage
-10
-20
-30
20
10
0
Vic = 200mVpp
F = 217Hz
Cb = 0
RL
≥
8
Ω
Tamb = 25°C
Vcc=2.6V
Vcc=5V
-40
-50
-60
-70
-80
Vcc=3.3V
-90
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Common Mode Input Voltage (V)
Figure 46.
Current consumption vs. power supply voltage
Figure 47.
Differential DC output voltage vs. common mode input voltage
2.5
2.0
1.5
1.0
0.5
0.0
0
5.0
4.5
4.0
No loads
Tamb = 25
°
C
3.5
3.0
1 2 3 4
Power Supply Voltage (V)
5 6
0.1
G = 6dB
Tamb = 25
°
C
Vcc=2.6V
0.01
1E-3
1E-4
1E-5
0 1 2 3
Vcc=3.3V
Common Mode Input Voltage (V)
Vcc=5V
4 5
Figure 48.
Current consumption vs. standby voltage
Figure 49.
Current consumption vs. standby voltage
4.0
3.5
3.0
2.5
2.0
Standby mode=0V
Standby mode=5V
1.5
1.0
Vcc = 5V
0.5
No load
Tamb = 25
°
C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Standby Voltage (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.4
Standby mode=0V
Standby mode=3.3V
0.8
1.2
1.6
2.0
Standby Voltage (V)
2.4
Vcc = 3.3V
No load
Tamb = 25
°
C
2.8
3.2
15/26
Electrical characteristics TS4995
Figure 50.
Current consumption vs. standby voltage
Figure 51.
Frequency response
4.0
3.5
3.0
2.5
Standby mode=0V
2.0
1.5
Standby mode=2.6V
1.0
Vcc = 2.6V
0.5
No load
Tamb = 25
°
C
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Standby Voltage (V)
6
5
4
3
8
7
2
1
0
20
Cin=4.7
μ
F
Cin=330nF
100 1000
Frequency (Hz)
Vcc = 5V
Gain = 6dB
ZL = 8
Ω
+ 500pF
Tamb = 25
°
C
10000
20k
Figure 52.
Frequency response
8
7
6
5
4
3
2
1
0
20
Cin=4.7
μ
F
Cin=330nF
100 1000
Frequency (Hz)
Vcc = 3.3V
Gain = 6dB
ZL = 8
Ω
+ 500pF
Tamb = 25
°
C
10000 20k
Figure 53.
Frequency response
8
7
6
5
4
3
2
1
0
20
Cin=4.7
μ
F
Cin=330nF
100 1000
Frequency (Hz)
Vcc = 2.6V
Gain = 6dB
ZL = 8
Ω
+ 500pF
Tamb = 25
°
C
10000 20k
Figure 54.
SNR vs. power supply voltage with unweighted filter
Figure 55.
SNR vs. power supply voltage with
A-weighted filter
120
118
116
114
112
110
108
106
104
102
100
2.5
F = 1kHz
G = 6dB
Cb = 1
μ
F
THD + N < 0.7%
Tamb = 25°C
3.0
RL=16
Ω
RL=8
3.5
4.0
4.5
Power Supply Voltage (V)
Ω
5.0
5.5
120
118
116
114
112
110
108
106
104
102
100
2.5
F = 1kHz
G = 6dB
Cb = 1
μ
F
THD + N < 0.7%
Tamb = 25°C
3.0
RL=16
Ω
RL=8
3.5
4.0
4.5
Power Supply Voltage (V)
Ω
5.0
5.5
16/26
TS4995 Application information
4.2
4.3
Note:
The TS4995 is a monolithic full-differential input/ output power amplifier with fixed +6 dB gain. The TS4995 also includes a common mode feedback loop that controls the output bias value to average it at V
CC
/2 for any DC common mode input voltage. This allows maximum output voltage swing, and therefore, to maximize the output power. Moreover, as the load is connected differentially instead of single-ended, output power is four times higher for the same power supply voltage.
The advantages of a full-differential amplifier are:
●
●
●
●
●
V ery high PSRR (power supply rejection ratio)
High common mode noise rejection
Virtually no pop and click without additional circuitry, giving a faster start-up time compared to conventional single-ended input amplifiers
Easier interfacing with differential output audio DAC
No input coupling capacitors required due to common mode feedback loop
In theory, the filtering of the internal bias by an external bypass capacitor is not necessary.
However, to reach maximum performance in all tolerance situations, it is recommended to keep this option.
Common mode feedback loop limitations
As explained previously, the common mode feedback loop allows the output DC bias voltage to be averaged at V
CC
/2 for any DC common mode bias input voltage.
Due to the V
IC
limitation of the input stage (see
feedback loop can fulfil its role only within the defined range.
Low frequency response
The input coupling capacitors block the DC part of the input signal at the amplifier inputs. C in and R in
form a first-order high pass filter with -3 dB cut-off frequency.
F
CL
=
2
× π
1
×
R in
×
C in
( Hz )
The input impedance for the TS4995 is typically 20k
Ω
and there is tolerance around this value.
, you can easily establish the C in
value required for a -3 dB cut-off frequency.
17/26
Application information
Figure 56.
-3 dB lower cut-off frequency vs. input capacitance
100
10
0.1
Typical Input
Impedance
Maximum Input
Impedance
0.5
Input Capacitor Cin (
μ
F)
All gain setting
Tamb=25
°
C
Minimum Input
Impedance
1
4.4 Power dissipation and efficiency
Assumptions:
●
●
Load voltage and current are sinusoidal (V out
and I out
)
Supply voltage is a pure DC source (V
CC
)
The output voltage is:
V out
= V peak
sin
ω t (V) and
I out
=
V out
-------------
(A)
R
L and
P out
=
V
2
---------------------
(W)
2R
L
Therefore, the average current delivered by the supply voltage is:
Equation 1
Icc AVG = 2
V
---------------- (A)
π
R
L
The power delivered by the supply voltage is:
Equation 2
P supply
= V
CC
I ccAVG
(W)
18/26
TS4995
TS4995
Note:
Application information
Therefore, the power dissipated by each amplifier is:
P diss
= P supply
- P out
(W)
P diss
=
2 2V
----------------------
P
π
R
L out
– P out and the maximum value is obtained when:
Pdiss
-------------------- = 0
∂
P out and its value is:
Equation 3
Pdiss max
=
2 Vcc
2
π
2
R
L
( W )
This maximum value is only dependent on the power supply voltage and load values.
The efficiency is the ratio between the output power and the power supply:
Equation 4
η
=
P
------------------ =
P supply
π
V
--------------------
4V
CC
The maximum theoretical value is reached when V peak
= V
CC
, so:
η
=
π
4
The maximum die temperature allowable for the TS4995 is 125° C. However, in case of overheating, a thermal shutdown set to 150° C, puts the TS4995 in standby until the temperature of the die is reduced by about 5° C.
To calculate the maximum ambient temperature T amb
allowable, you need to know:
●
●
The power supply voltage, V
The load resistor value, R
L
CC
●
The package type, R thja
Example: V
CC
=5 V, R
L
=8
Ω,
R thja-flipchip
= 100° C/W (100 mm
2
copper heatsink).
Using the power dissipation formula given above in
P dissmax
= 633mW
T amb
is calculated as follows:
Equation 5
T amb
= 125
°
C – R thja
×
P dissmax
Therefore, the maximum allowable value for T amb
is:
T amb
= 125-100x0.633=61.7° C
19/26
Application information
4.5
TS4995
Decoupling of the circuit
Two capacitors are needed to correctly bypass the TS4995: a power supply bypass capacitor C
S
and a bias voltage bypass capacitor C b
.
The C
S
capacitor has particular influence on the THD+N at high frequencies (above 7 kHz) and an indirect influence on power supply disturbances. With a value for C
S of 1 µF, one can expect THD+N performance similar to that shown in the datasheet.
In the high frequency region, if C
S
is lower than 1 µF, then THD+N increases and disturbances on the power supply rail are less filtered.
On the other hand, if C
S
is greater than 1 µF, then those disturbances on the power supply rail are more filtered.
The C b
capacitor has an influence on the THD+N at lower frequencies, but also impacts
PSRR performance (with grounded input and in the lower frequency region).
4.6 Wake-up t
WU
When the standby is released to put the device ON, the bypass capacitor C b
is not charged immediately. Because C b
is directly linked to the bias of the amplifier, the bias will not work properly until the C b
voltage is correct. The time to reach this voltage is called the wake-up time or t
WU
, with C b
=1 µF. During the wake-up phase, the TS4995 gain is close to zero. After the wake-up time, the gain is released and set to its nominal value.
If C b
has a value different from 1 µF, then refer to the graph in
corresponding wake-up time.
Figure 57.
Startup time vs. bypass capacitor
15
Tamb=25
°
C
Vcc=5V
10
5
Vcc=2.6V
Vcc=3.3V
0
0.0
0.4
0.8
1.2
1.6
Bypass Capacitor Cb (
μ
F)
2.0
20/26
TS4995 Application information
Note:
When the standby command is set, the time required to put the two output stages in high impedance and the internal circuitry in shutdown mode is a few microseconds.
In shutdown mode, the Bypass pin and V in
+, V in
- pins are shorted to ground by internal switches. This allows a quick discharge of C b
and C in
.
4.9
Due to its fully differential structure, the pop performance of the TS4995 is close to perfect.
However, due to mismatching between internal resistors R in
, R feed
, and external input capacitors C in
, some noise might remain at startup. To eliminate the effect of mismatched components, the TS4995 includes pop reduction circuitry. With this circuitry, the TS4995 is close to zero pop for all possible common applications.
In addition, when the TS4995 is in standby mode, due to the high impedance output stage in this configuration, no pop is heard.
Single-ended input configuration
It is possible to use the TS4995 in a single-ended input configuration. However, input
coupling capacitors are needed in this configuration. The schematic diagram in
shows an example of this configuration.
21/26
Application information
Figure 58.
Typical single-ended input application
VCC
Cs1
1uF
TS4995 FlipChip
TS4995
Ve
P1
Cin1
3
Vin-
330nF
Cin2
1
Vin+
330nF
1uF
Cbypass1
8
BYP ASS
BIAS
STDBY
STBY
STDBY MODE
+
TS4995
Vo7
Vo+ 5
8 Ohms
VCC
22/26
TS4995 Package information
T o meet environmental requirements, STMicroelectronics offers these devices in
ECOPACK
®
packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an STMicroelectronics trademark. ECOPACK specifications are available at: www.st.com
.
Figure 59.
9-bump flip-chip package mechanical drawing
– Die size: 1.63mm x 1.63mm ± 30µm
– Die height (including bumps): 600µm
– Bumps diameter: 315µm ±50µm
– Bump diameter before reflow: 300µm ±10µm
– Bumps height: 250µm ±40µm
– Die height: 350µm ±20µm
– Pitch: 500µm ±50µm
– Coplanarity: 60µm max
Figure 60.
Tape and reel schematics
23/26
Package information
Figure 61.
Pin out (top view) Figure 62.
Marking (top view)
TS4995
– Balls are underneath
24/26
TS4995 Ordering information
Table 7.
Order code
Order code
Temperature range
TS4995EIJT -40° C to +85° C
Package
Lead free flip chip 9
Packing
Tape & reel
Marking
95
Table 8.
Date
1-Jun-2006
25-Oct-2006
25-Mar-2008
Document revision history
Revision
1
2
3
Changes
Final datasheet.
Additional information for 4
Ω
load.
Modified
Figure 60: Tape and reel schematics
orientation.
25/26
TS4995
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