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STGWA80H65DFB
Product summary
Order code STGWA80H65DFB
Marking
Package
Packing
GWA80H65DFB
TO-247 long leads
Tube
STGWA80H65DFB
Datasheet
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
Features
• Maximum junction temperature: T
J
= 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: V
CE(sat)
= 1.6 V (typ.) @ I
C
= 80 A
• Tight parameter distribution
• Safe paralleling
• Positive V
CE(sat)
temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V
CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
DS11933 - Rev 2 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STGWA80H65DFB
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
I
V
I
CES
CP
V
I
C
(2)
GE
F
I
FP
(2)
P
TOT
T
STG
T
J
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current (t p
≤ 1 μs, T
J
< 175 °C)
Gate-emitter voltage
Transient gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current (t p
≤ 1 μs, T
J
< 175 °C)
Total power dissipation at T
Storage temperature range
C
= 25 °C
Operating junction temperature range
1. Current level is limited by bond wires
2. Defined by design, not subject to production test.
Symbol
R thJC
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
650
120 (1)
80
300
±20
±30
120 (1)
80
300
470
- 55 to 150
- 55 to 175
A
W
°C
A
V
V
A
Unit
V
A
Value
0.32
0.66
50
Unit
°C/W
DS11933 - Rev 2 page 2/16
2
STGWA80H65DFB
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol
V
(BR)CES
V
CE(sat)
V
F
V
GE(th)
I
CES
I
GES
Parameter
Collector-emitter breakdown voltage
Table 3. Static characteristics
Test conditions
V
GE
= 0 V, I
C
= 2 mA
Collector-emitter saturation voltage
Forward on-voltage
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
V
GE
= 15 V, I
C
= 80 A
V
GE
= 15 V, I
C
= 80 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 80 A, T
J
= 175 °C
I
F
= 80 A
I
F
= 80 A, T
J
= 125 °C
I
F
= 80 A, T
J
= 175 °C
V
CE
= V
GE
, I
C
= 1 mA
V
GE
= 0 V, V
CE
= 650 V
V
CE
= 0 V, V
GE
= ±20 V
Min.
Typ.
Max.
Unit
650 V
5
1.6
1.5
6
1.6
1.8
1.9
1.9
2
2.3
V
V
7
100
±250
V
µA nA
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Table 4. Dynamic characteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
V
CC
= 520 V, I
C
= 80 A, V
GE
= 15 V (see
Figure 28. Gate charge test circuit
)
-
-
-
-
Min.
Typ.
Max.
Unit
-
10524
385
-
pF
215
414
78
170
-
-
-
nC
DS11933 - Rev 2 page 3/16
DS11933 - Rev 2
STGWA80H65DFB
Electrical characteristics
Table 5. IGBT switching characteristics (inductive load)
E on
(1)
E off
(2)
E ts t d(on) t r
(di/dt) on t d(off)
Symbol t d(on) t r
(di/dt) on t d(off) t f t f
E on
(1)
E off
(2)
E ts
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching energy
Turn-off switching energy
Total switching energy
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Test conditions
V
CE
= 400 V, I
C
= 80 A, V
GE
= 15 V,
R
G
= 10 Ω (see Figure 27. Test circuit for inductive load switching )
V
CE
= 400 V, I
C
= 80 A, V
GE
= 15 V,
R
G
= 10 Ω, T
J
= 175 °C (see
Figure 27. Test circuit for inductive load switching )
Min.
Typ.
Max.
Unit
84 ns
52 -
1270 A/µs
280
31
2.1
-
-
ns mJ 1.5
3.6
77
51
-
-
-
ns
1270
328
30
4.4
-
-
-
A/µs ns
2.1
6.5
-
mJ
Symbol t rr
Q rr
I rrm dI rr
/dt
E rr t rr
Q rr
I rrm dI rr
/dt
E rr
Table 6. Diode switching characteristics (inductive load)
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Test conditions
I
F
= 80 A, V
R
= 400 V, V
GE
= 15 V di/ dt = 100 A/µs (see
Figure 27. Test circuit for inductive load switching
)
I
F
= 80 A, V
R
= 400 V, V
GE
= 15 V,
T
J
= 175 °C di/dt = 100 A/µs (see
Figure 27. Test circuit for inductive load switching )
-
-
-
-
Min.
Typ.
Max.
Unit
85 ns
-
1105
26
-
nC
A
-
-
722
267
149
4920
66
546
1172
-
-
-
-
-
-
A/µs
A/µs
µJ
µJ ns nC
A page 4/16
STGWA80H65DFB
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
P
TOT
(W)
GIPD160920130948FSR
V
GE
= 15 V, T
J
= 175 °C
400
300
200
100
0
0 50 100 150 T
C
(°C)
Figure 3. Output characteristics (T
J
= 25 °C)
I
C
(A)
160
140
120
100
80
60
40
20
0
0
V
GE
= 15 V
1 2
IGBT060715EWFRWOC25
13 V
11 V
9 V
3 4
7 V
V
CE
(V)
Figure 5. V
CE(sat)
vs junction temperature
V
CE(sat)
(V)
IGBT060715EWFRWVCET
V
GE
= 15 V
2.6
I
C
= 160 A
2.2
I
C
= 80 A
1.8
1.4
1.0
-50 0
I
C
= 40 A
50 100 150 T
J
(°C)
Figure 2. Collector current vs case temperature
I
C
(A)
120
GIPD160920130941FSR
V
GE
=15 V,T
J
=175 °C
100
80
60
40
20
0
0 25 50 75 100 125 150 T
C
(°C)
Figure 4. Output characteristics (T
J
= 175 °C)
I
C
(A)
160
140
120
100
80
60
40
20
0
0 1
V
GE
= 15 V
IGBT060715EWFRWOC175
13 V
11 V
9 V
2 3 4
7 V
V
CE
(V)
Figure 6. V
CE(sat)
vs collector current
V
CE(sat)
(V)
2.4
V
GE
IGBT060715EWFRWVCEC
= 15 V
T
J
= 175 °C T
J
= 25 °C
2.0
1.6
T
J
= -40 °C
1.2
0.8
0.4
0.0
0 40 80 120 160 I
C
(A)
DS11933 - Rev 2 page 5/16
STGWA80H65DFB
Electrical characteristics (curves)
Figure 7. Collector current vs switching frequency
Ic [A]
160
140
120
100
Tc=100 °C
Tc=80°C
80
60
40
1 rectangular current shape,
(duty cycle=0.5, V
CC
V
GE
= 0/15 V, T
J
=175°C)
10
Ω ,
GIPD260520141426FSR f [kHz]
Figure 8. Forward bias safe operating area
I
C
(A)
IGBT171120161002FSOA t p
= 1µs
10 2 t p
= 10µs t p
= 100µs 10 1
10 0
10 0 single pulse, T
C
= 25°C
T
J
< 175 °C, V
GE
= 15 V
10 1 10 2
V
CE
(V)
Figure 9. Transfer characteristics
120
80
40
0
5
I
C
(A)
200
160
IGBT060715EWFRWTCH
V
CE
= 4 V
6
T
J
= 175 °C
7 8
T
J
= 25 °C
9 V
GE
(V)
Figure 10. Diode V
F
vs forward current
GIPD160920131135FSR
V F
(V)
2.4
-40°C
2.0
25°C
1.6
T J = 175°C
1.2
0.8
20 40 60 80 100 120 140 I F (A)
Figure 11. Normalized V
GE(th)
vs junction temperature
V
GE(th)
(norm)
1.1
GIPD160920131151FSR
I
C
= 1mA
1.0
0.9
0.8
0.7
0.6
-50 0 50 100 150 T
J
(°C)
Figure 12. Normalized V
(BR)CES
vs junction temperature
V
BR(CES)
(norm)
GIPD160920131144FSR
I
C
= 2 mA
1.1
1.0
0.9
-50 0 50 100 150 T
J
(°C)
DS11933 - Rev 2 page 6/16
STGWA80H65DFB
Electrical characteristics (curves)
C
(pF)
Figure 13. Capacitance variations
GIPD160920131200FSR
10000
C
IES
1000
100
10
0.1
1
C
OES
C
RES
10 100 V
CE
(V)
Figure 15. Switching energy vs collector current
GIPD160920131436FSR
E
(µJ)
V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, T
J
= 175°C
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0 20 40 60 80
E ON
E
OFF
100 120 140 I C (A)
Figure 17. Switching energy vs temperature
GIPD160920131504FSR
E
(µJ)
4500
V CC = 400V, V GE = 15V
I C = 80A, R = 10Ω
E ON
4000
3500
3000
2500
2000
1500
1000
0 25
E
OFF
50 75 100 125 150 175 T J (°C)
Figure 14. Gate charge vs gate-emitter voltage
V
GE
(V)
16
GIPD160920131156FSR
V
I
C
CC
= 80 A
= 520 V
12
8
4
0
0 100 200 300 400 Q g
(nC)
Figure 16. Switching energy vs gate resistance
GIPD160920131208FSR
E
(µJ)
V
CC
= 400V, V
GE
= 15V
I
C
= 80A, T
J
= 175°C
5000
4200
E ON
3400
2600
E
OFF 1800
1000
2 6 10 14 18 R G (Ω)
Figure 18. Switching energy vs collector emitter voltage
GIPD160920131524FSR
E
(µJ)
6000
T J = 175°C, V = 15V
I C = 80A, R g = 10Ω
E
ON
5000
4000
3000
2000
E
OFF
1000
150 200 250 300 350 400 450 V CE (V)
DS11933 - Rev 2 page 7/16
STGWA80H65DFB
Electrical characteristics (curves)
Figure 19. Switching times vs collector current
GIPD160920131533FSR t
(ns) t doff
100 t don t r
10 t f
T J = 175°C, V GE = 15V
1
40
V CC = 400V, R
60 80 g = 10Ω
100 120 140 I C (A)
Figure 20. Switching times vs gate resistance t
(ns)
100
T
J
= 175°C, V
GE
= 15V
V
CC
= 400V, I
C
= 80A
GIPD160920131539FSR t doff t don t r t f
10
4 8 12 16 20 R g (Ω)
Figure 21. Reverse recovery current vs diode current slope
GIPD160920131550FSR
I rm
(A)
120
V
F
= 400V, I
F
= 80A
T
J
= 175°C
80
40
T J = 25°C
0
0 500 1000 1500 2000 2500 di/dt(A/µs)
Figure 22. Reverse recovery time vs diode current slope
GIPD160920131557FSR t rr
(ns)
350
V F = 400V, I F = 80A
300
250
200
150
100
50
0
0
T
J
= 175°C
T
J
= 25°C
500 1000 1500 2000 2500 di/dt(A/µs)
Figure 23. Reverse recovery charge vs diode current slope
GIPD160920131602FSR
Q rr
(nC)
7000
V F = 400V, I F = 80A
6000 T J = 175°C
5000
4000
3000
2000
1000
0
0
T
J
= 25°C
500 1000 1500 2000 2500 di/dt(A/µs)
Figure 24. Reverse recovery energy vs diode current slope
GIPD160920131610FSR
E rr
(µJ)
1200 r
T J = 175°C
1000
800
V
F
= 400V, I
F
= 80A
600
400
200
0
0
T
J
= 25°C
500 1000 1500 2000 2500 di/dt(A/µs)
DS11933 - Rev 2 page 8/16
DS11933 - Rev 2
K
Figure 25. Thermal impedance for IGBT
ZthTO2T_A
δ = 0.5
10 -1
δ = 0.2
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
Single pulse
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 26. Thermal impedance for diode
STGWA80H65DFB
Electrical characteristics (curves) page 9/16
STGWA80H65DFB
Test circuits
3
Test circuits
Figure 27. Test circuit for inductive load switching
G
C
A A
E
B
L=100 µH
B
G
C
E
D.U.T
+
-
R
G
3.3
µF
1000
µF
V
CC
AM01504v1
Figure 29. Switching waveform
V
CE
V
G
I
C t d(on) t on t r(Ion)
90%
10% t r(Voff) t cross t d(off) t off t f
90%
10%
90%
10%
AM01506v1
Figure 28. Gate charge test circuit k k k k k k
AM01505v1
Figure 30. Diode reverse recovery waveform
25
DS11933 - Rev 2 page 10/16
4
STGWA80H65DFB
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
DS11933 - Rev 2 page 11/16
4.1
STGWA80H65DFB
TO-247 long leads package information
TO-247 long leads package information
Figure 31. TO-247 long leads package outline
DS11933 - Rev 2
8463846_2_F page 12/16
DS11933 - Rev 2
Dim.
c
D
E
E2
E3 e
L
L1
P
Q
S
A
A1
A2 b b2 b3
0.59
20.90
15.70
4.90
2.40
5.34
19.80
3.50
5.60
6.05
21.00
15.80
5.00
2.50
5.44
19.92
3.60
6.15
STGWA80H65DFB
TO-247 long leads package information
Table 7. TO-247 long leads package mechanical data
Min.
4.90
2.31
1.90
1.16
mm
Typ.
5.00
2.41
2.00
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
Max.
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
page 13/16
Revision history
Date
17-Nov-2016
25-Jun-2019
Revision
1
2
Table 8. Document revision history
Changes
First release.
Part number previously included in datasheet DocID024366.
Modified Table 1. Absolute maximum ratings
.
Minor text changes.
STGWA80H65DFB
DS11933 - Rev 2 page 14/16
STGWA80H65DFB
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
DS11933 - Rev 2 page 15/16
STGWA80H65DFB
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS11933 - Rev 2 page 16/16
