STB6N62K3
Datasheet
N-channel 620 V, 0.95 Ω typ., 5.5 A MDmesh™ K3
Power MOSFET in D²PAK package
G(1)
TAB
2
1
3
D²PAK
D(2, TAB)
S(3)
AM01475V1
Features
Order code
STB6N62K3
V
DS
620 V
R
DS(on) max.
1.2 Ω
• 100% avalanche tested
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Improved diode reverse recovery characteristics
• Zener-protected
I
D
5.5 A
P
TOT
90 W
Applications
• Switching applications
Description
This MDmesh™ K3 Power MOSFET is the result of improvements applied to
STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Product status link
STB6N62K3
Product summary
Order code STB6N62K3
Marking 6N62K3
D 2 Package
Packing
PAK
Obsolete Product(s) - Obsolete Product(s)
DS12558 - Rev 1 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STB6N62K3
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
I
AR
(2)
E
AS
(3)
ESD
Drain-source voltage
Gate- source voltage
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
= 25 °C
= 100 °C
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy dv/dt
(4)
T stg
T j
Gate-source human body model (R = 1.5 kΩ, C = 100 pF)
Peak diode recovery voltage slope
Storage temperature range
Operating junction temperature range
1. Pulse width limited by safe operating area.
2. Pulse width limited by Tj max.
3. Starting Tj = 25 °C, I
D
= I
AR
, V
DD
= 50 V.
4. I
SD
≤ 5.5 A, di/dt ≤ 400 A/µs, V
DD
= 80% V
(BR)DSS.
Table 2. Thermal data
Symbol
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case
Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Parameter Value
1.39
30
Obsolete Product(s) - Obsolete Product(s)
22
90
5.5
140
2.5
12
Value
620
± 30
5.5
3
-55 to 150
A
W
A mJ kV
V/ns
Unit
V
V
A
A
°C
Unit
°C/W
°C/W
DS12558 - Rev 1 page 2/15
STB6N62K3
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 3. On /off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
I
D
Test conditions
= 1 mA, V
GS
= 0 V
I
I
DSS
GSS
Zero gate voltage drain current
Gate body leakage current
V
GS
= 0 V, V
DS
= 620 V
V
GS
= 0 V, V
DS
= 620 V
T
C
= 125 °C (1)
V
GS
= ±20 V,
V
DS
= 0 V
V
DS
= V
GS
, I
D
= 50 µA V
R
GS(th)
DS(on)
Gate threshold voltage
Static drain-source on resistance
V
GS
1. Defined by design, not subject to production test.
= 10 V, I
D
= 2.8 A
Min.
620
3
Typ.
3.75
0.95
Max.
0.8
50
± 9
4.5
1.2
Table 4. Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit Symbol
C iss
C oss
C rss
C o(er)
(1)
C o(tr)
(2)
Input capacitance
Output capacitance
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0 V
Reverse transfer capacitance
Equivalent output capacitance energy related
Equivalent output capacitance time related
V
GS
= 0 V,
V
DS
= 0 to 480 V
-
-
875
100
17
28
63
-
pF pF
Intrinsic gate resistance f = 1 MHz open drain 3.5
R
G
Total gate charge 34 Q g
V
DD
= 496 V, I
D
= 5.5 A,
Q
Gate-source charge
V
GS
= 0 to 10 V
4 Q gs
Obsolete Product(s) - Obsolete Product(s)
gd
Gate-drain charge 22 nC
1. C o(er)
is a constant capacitance value that gives the same stored energy as C oss
while V
DS
is rising from 0 to 80% V
DSS
.
2. C o(tr)
is a constant capacitance value that gives the same charging time as C oss
while V
DS
is rising from 0 to 80% V
DSS
.
Ω
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 5. Switching times
Test conditions
V
DD
= 310 V, I
D
= 2.75 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 14. Test circuit for resistive load switching times
and
Figure 19. Switching time waveform )
Min.
-
Typ.
22
12
49
20
Max.
-
Unit ns
Unit
V
µA
µA
µA
V
Ω
DS12558 - Rev 1 page 3/15
STB6N62K3
Electrical characteristics
Table 6. Source drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
I
I t
Q
RRM t
Q rr rr rr rr
(2)
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
SD
= 5.5 A, V
GS
= 0 V
I
SD
= 5.5 A, di/dt = 100 A/µs
V
DD
= 60 V (see
Figure
16. Test circuit for inductive load switching and diode recovery times )
I
SD
= 5.5 A, di/dt = 100 A/µs
V
DD
= 60 V, T j
= 150 °C
(see Figure 16. Test circuit for inductive load switching and diode recovery times
)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Min.
-
-
-
-
Symbol
V
(BR)GSO
Parameter
Gate-source breakdown voltage
Table 7. Gate-source Zener diode
Test conditions Min.
I
D
= 0 A, I
GS
= ±1 mA ±30
290
1.9
13.5
335
2.4
14.5
Typ.
Max.
5.5
27
1.5
Unit
A
A ns
μC
V ns
μC
A
Typ.
-
Max.
Unit
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
Obsolete Product(s) - Obsolete Product(s)
DS12558 - Rev 1 page 4/15
STB6N62K3
Electrical characteristics curves
2.1
Electrical characteristics curves
I D
(A)
Figure 1. Safe operating area
Tj=150°C
Tc=25°C
Single pulse
AM09051v1
10 1
10 0
DS(on)
in this area is
by max R
10µs
100µs
1ms
10ms
10 -1
10 -1 10 0 10 1 10 2 V
DS
(V)
Figure 2. Thermal impedance
Figure 3. Output characteristics
2.0
1.5
1.0
0.5
0
0
I D
(A)
3.5
3.0
2.5
1
V GS =10V
2
AM09054v1
6V
4V
V
DS
(V)
Figure 4. Transfer characteristics
AM09055v1
3
2
1
0
0
I D
(A)
8
7
6
5
4
2
V
DS
=15V
4 6 8 10 V
GS
(V)
Obsolete Product(s) - Obsolete Product(s)
V GS
(V)
AM09057v1
V DS ( V)
Figure 6. Static drain-source on resistance
R DS(on)
( W )
12
V
DD
=496V
I
D
=5.5A
V
GS
=10V
AM09056v1
V
DS
500
1.15
1.10
10
400
8 1.05
300
1.00
6
200
4 0.95
100
2 0.90
0
0
0
Q g
(nC)
0.85
0 10 20 30 1 2 3 4 5 6 I
D
(A)
DS12558 - Rev 1 page 5/15
STB6N62K3
Electrical characteristics curves
Figure 7. Capacitance variations
C
(pF)
AM09058v1
1000
Ciss
100
10
Coss
Crss
1
0.1
1 10 100 V
DS
(V)
Figure 9. Normalized gate threshold voltage vs temperature
AM09061v1
V GS(th)
(norm)
1.10
I
D
=50µA
1.00
0.90
0.80
0.70
-75 -25 25 75 125 T
J
(°C)
Figure 11. Normalized B
VDSS
vs temperature
AM09060v1
(norm)
I D =1mA
1.05
1.00
0.95
0.90
-75 -25 25 75 125 T J (°C)
Figure 8. Output capacitance stored energy
AM09059v1
E oss
(µJ)
5
4
3
2
1
0
0 100 200 300 400 500 V
DS
(V)
Figure 10. Normalized on resistance vs temperature
R DS(on)
(norm)
AM09062v1
2.5
I D =2.8A
V
GS
=10V
2.0
1.5
1.0
0.5
0.0
-75 -25 25 75 125 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
AM09063v1
V SD
(V)
T J =-50°C
1.0
T J =25°C
0.8
0.6
0.4
0.2
0
0
T J =150°C
1 2 3 4 5 6 I SD (A)
DS12558 - Rev 1 page 6/15
Figure 13. Maximum avalanche energy vs temperature
AM09064v1 E
AS
(mJ)
160
140
I
D
=5.5 A
V DD =50 V
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 T
J
(°C)
STB6N62K3
Electrical characteristics curves
Obsolete Product(s) - Obsolete Product(s)
DS12558 - Rev 1 page 7/15
STB6N62K3
Test circuits
3
Test circuits
Figure 14. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 15. Test circuit for gate charge behavior
V
GS pulse width
2200
μF
+
1 kΩ
12 V
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 17. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
V
DD
I D
V
D
I DM
V
(BR)DSS
V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
Figure 19. Switching time waveform
0 t d(on) t on t r
90%
10%
V
GS
V
DS
90% t d(off) t off t f
90%
10%
0 10%
AM01473v1
DS12558 - Rev 1 page 8/15
4
STB6N62K3
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
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DS12558 - Rev 1 page 9/15
4.1
STB6N62K3
D²PAK (TO-263) type A package information
D²PAK (TO-263) type A package information
Figure 20. D²PAK (TO-263) type A package outline
Obsolete Product(s) - Obsolete Product(s)
0079457_25
DS12558 - Rev 1 page 10/15
Dim.
e1
H
J1
L
L1
L2
R
V2
D
D1
D2
E
E1
E2 e
A
A1 b b2 c c2
STB6N62K3
D²PAK (TO-263) type A package information
Table 8. D²PAK (TO-263) type A package mechanical data mm
Typ.
1.14
0.45
1.23
8.95
7.50
Min.
4.40
0.03
0.70
1.10
10.00
8.30
6.85
7.75
1.30
8.50
7.05
2.54
4.88
15.00
2.49
2.29
1.27
1.30
0.40
0°
5.28
15.85
2.69
2.79
1.40
1.75
8°
1.70
0.60
1.36
9.35
8.00
Max.
4.60
0.23
0.93
1.50
10.40
8.70
7.25
Obsolete Product(s) - Obsolete Product(s)
DS12558 - Rev 1 page 11/15
STB6N62K3
D²PAK (TO-263) type A package information
Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
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DS12558 - Rev 1 page 12/15
Revision history
Date
09-May-2018
Revision
1
Table 9. Document revision history
Changes
First release. Part number previously included in datasheet DocID022605.
STB6N62K3
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DS12558 - Rev 1 page 13/15
STB6N62K3
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1
D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
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DS12558 - Rev 1 page 14/15
STB6N62K3
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
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