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STB30NF20L
Automotive-grade Nchannel 200 V, 0.066 Ω typ., 30 A,
STripFET™ Power MOSFET in D²PAK package
Datasheet - production data
G(1)
TAB
Figure 1: Internal schematic diagram
D(2, TAB)
Features
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STB30NF20L 200 V 0.075 Ω
AEC-Q101 qualified
Gate charge minimized
100% avalanche tested
Excellent FoM (figure of merit)
Very low intrinsic capacitance
30 A 150 W
Applications
Switching applications
Description
This N-channel enhancement mode Power
MOSFET benefits from the latest refinement of
STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
S(3)
2
1
3
D²PAK
Order code
STB30NF20L
AM01475v1_noZen
Table 1: Device summary
Marking Package
30NF20L D²PAK
Packaging
Tape and reel
March 2017 DocID022753 Rev 3
This is information on a product in full production.
1/15 www.st.com
Contents
Contents
STB30NF20L
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
Electrical characteristics (curves) ...................................................... 6
4 Package information ....................................................................... 9
D²PAK package information .............................................................. 9
D²PAK packing information ............................................................. 12
5 Revision history ............................................................................ 14
2/15 DocID022753 Rev 3
STB30NF20L
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
P
TOT
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
SD
≤ 30 A, di/dt ≤ 200 A/µs, V
DD
= 80% V
(BR)DSS
Symbol
Table 3: Thermal data
Parameter
R thJC
R thJA
Thermal resistance junction-case
Thermal resistance junction-ambient
Symbol
I
AR
E
AS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by T jmax
.)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Electrical ratings
Value
200
±20
30
19
120
150
10
- 55 to 175
Unit
V
V
A
A
A
W
V/ns
°C
Value
1
62.5
Unit
°C/W
°C/W
Value
30
140
Unit
A mJ
DocID022753 Rev 3 3/15
Electrical characteristics
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: On/off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0 V
V
GS
= 0 V, V
DS
= 200 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 200 V,
T
C
I
GSS
Gate source leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on-resistance
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 5 V, I
D
= 15 A
STB30NF20L
Min. Typ. Max. Unit
200 V
1 µA
10 µA
±100 µA
2 3 V
0.066 0.075
Ω
1
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz, V
GS
= 0 V
V
DD
= 160 V, I
D
= 30 A,
V
GS
= 0 to 10 V
(see Figure 14: "Test circuit for gate charge behavior" )
Min. Typ. Max. Unit
-
-
1990
297
-
- pF pF
-
-
-
-
42
65
7
21
-
-
-
- pF nC nC nC
4/15 DocID022753 Rev 3
STB30NF20L
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 7: Switching times
Test conditions
V
DD
= 100 V, I
D
= 15 A,
R
G
= 4.7 Ω, V
GS
= 10 V
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
14
12
68
14
-
-
-
- ns ns ns ns
Symbol
I
SD
Source-drain current
I
Source-drain current
(pulsed)
V
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
I
RRM t
Q rr rr
RRM
Parameter
Reverse recovery current
Reverse recovery time
Table 8: Source-drain diode
Test conditions
Reverse recovery charge
Reverse recovery current
I
V
SD
SD
= 1.5 V
= 30 A, V
GS
= 0 V
I
SD
= 30 A, di/dt = 100 A/µs
V
DD
= 100 V
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
I
SD
= 30 A, di/dt = 100 A/µs
V
DD
= 100 V, T j
= 150 °C
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Min. Typ. Max. Unit
- 30 A
- 120 A
-
-
-
140
0.75
1.5 V ns
µC
-
-
-
-
13
170
1.1
14
A ns
µC
A
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID022753 Rev 3 5/15
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STB30NF20L
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Normalized V
BR(DSS)
vs temperature Figure 7: Static drain-source on-resistance
W
6/15 DocID022753 Rev 3
STB30NF20L
Figure 8: Gate charge vs gate-source voltage
Electrical characteristics
Figure 9: Capacitance variations
Figure 10: Normalized gate threshold voltage vs temperature
Figure 11: Normalized on-resistance vs temperature
Figure 12: Source-drain diode forward characteristics
DocID022753 Rev 3 7/15
Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load switching times
STB30NF20L
Figure 14: Test circuit for gate charge behavior
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
8/15 DocID022753 Rev 3
STB30NF20L
4
4.1
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
D²PAK package information
Figure 19: D²PAK (TO-263) type A package outline
DocID022753 Rev 3 9/15
Package information
Dim.
D2
E
E1
E2 e e1
H c c2
D
D1
A
A1 b b2
J1
L
L1
L2
R
V2
STB30NF20L
Table 9: D²PAK (TO-263) type A package mechanical data mm
Min. Typ.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
1.10
10.00
8.50
6.85
8.70
7.05
2.54
4.88
15.00
2.49
2.29
1.27
1.30
7.75
1.30
0.40
0°
5.28
15.85
2.69
2.79
1.40
1.75
8°
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
8.00
1.50
10.40
8.90
7.25
10/15 DocID022753 Rev 3
STB30NF20L Package information
Figure 20: D²PAK (TO-263) type A recommended footprint (dimensions are in mm)
DocID022753 Rev 3 11/15
Package information
4.2 D²PAK packing information
Figure 21: D 2 PAK type A tape outline
STB30NF20L
12/15 DocID022753 Rev 3
STB30NF20L
Figure 22: D 2 PAK type A reel outline
Package information
Dim.
K0
P0
P1
P2
R
T
W
A0
B0
D
D1
E
F
Min.
4.8
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
Table 10: D²PAK type A tape and reel mechanical data
Tape Reel mm
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
Dim.
Min.
A
B
C
D
G
N
T
Base quantity
Bulk quantity
1.5
12.8
20.2
24.4
100
0.35
24.3 mm
Max.
330
13.2
26.4
30.4
1000
1000
DocID022753 Rev 3 13/15
Revision history
5
STB30NF20L
Revision history
Date Revision
Table 11: Document revision history
Changes
01-Feb-2012
07-Mar-2012
02-Mar-2017
1
2
3
First release
P
TOT
in cover page and in Table 2 has been updated. Figure 2, Figure
6, Figure 10 and Figure 11 have been updated.
Updated title and features on cover page.
Updated Table 2: "Absolute maximum ratings" ,
and Figure 3: "Thermal impedance" .
Minor text changes
14/15 DocID022753 Rev 3
STB30NF20L
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
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Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics
– All rights reserved
DocID022753 Rev 3 15/15
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