SCTWA50N120-4
Datasheet
Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247-4 package
Gate(4)
Driver source(3)
Features
Order code
SCTWA50N120-4
V
DS
1200 V
R
DS(on)
max.
69 mΩ
• Very fast and robust intrinsic body diode
• Low capacitances
• Source sensing pin for increased efficiency
• Very high operating junction temperature capability (T
J
= 200 °C)
I
D
65 A
HiP247-4
1
2
3
4
Drain(1, TAB)
Applications
• High voltage DC-DC converters
• Battery charges
• Power supply for servers
• Solar inverters
• Motor control
Power source(2)
ND1TPS2DS3G4
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Product status link
SCTWA50N120-4
Product summary
Order code SCTWA50N120-4
Marking
Package
Packing
SCTWA50N120
HiP247-4
Tube
DS13585 - Rev 1 - December 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTWA50N120-4
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DS
V
GS
Drain-source voltage
Gate-source voltage
Parameter
I
D
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed) I
DM
(1)
P
TOT
T stg
T
J
Total power dissipation at T
Storage temperature range
C
= 25 °C
Operating junction temperature range
1. Pulse width limited by safe operating area.
Symbol
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Value
1200
-10 to 25
65
50
130
318
-55 to 200
Unit
V
V
A
A
W
°C
°C
Value
0.55
40
Unit
°C/W
°C/W
DS13585 - Rev 1 page 2/11
2
SCTWA50N120-4
Electrical characteristics
Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Symbol
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
Table 3. On/off states
Test conditions
V
DS
= 1200 V, V
GS
= 0 V
V
DS
= 0 V, V
GS
= -10 to 22 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 20 V, I
D
= 40 A
V
GS
= 20 V, I
D
= 40 A, T
J
= 150 °C
V
GS
= 20 V, I
D
= 40 A, T
J
= 200 °C
Min.
Typ.
Max.
Unit
5 µA
1.8
3.0
52
±100 nA
5.0
V
69
59
70 mΩ
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
R g
Table 4. Dynamic, based on HiP247 package option
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Test conditions
V
DS
= 400 V, f = 1 MHz, V
GS
= 0 V
V
DD
= 800 V, I
D
= 40 A, V
GS
= 0 to 20 V f = 1 MHz open drain
-
-
-
Min.
Typ.
Max.
Unit
1900 pF
170 pF
-
-
30
122
19
35
1.9
-
-
-
-
nC
Ω pF nC nC
Symbol
E on
E off
E on
E off
Table 5. Switching energy (inductive load), based on HiP247 package option
Parameter
Turn-on switching energy
Turn-off switching energy
Turn-on switching energy
Turn-off switching energy
Test conditions
V
DD
= 800 V, I
D
= 40 A,
R
G
= 2.2 Ω, V
GS
= -5 to 20 V
V
DD
= 800 V, I
D
= 40 A,
R
G
= 2.2 Ω, V
GS
= -5 to 20 V,
T
J
= 150 °C
Min.
Typ.
Max.
Unit
530 µJ
-
310
670
-
-
µJ
µJ
334 µJ
Symbol
V
SD t rr
Q rr
I
RRM
Table 6. Reverse SiC diode characteristics, based on HiP247 package option
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
= 20 A, V
GS
= 0 V
I
F
= 40 A, di/dt = 2000 A/μs, V
DD
= 800 V
Min Typ.
Max Unit
-
3.5
55
V ns
-
230
14
-
nC
A
DS13585 - Rev 1 page 3/11
V
GS
=20 V
V
GS
=7, 8, 9, 10 V
SCTWA50N120-4
Electrical characteristics (curves), based on HiP247 package option
2.1
Electrical characteristics (curves), based on HiP247 package option
Figure 1. Safe operating area
I
D
(A)
GIPG100520161113SOA
Operation in this area is limited by R
DS(on)
10 2
10 1
10 0
T
J
≤ 200 °C
T
C
= 25 °C single pulse
10 -1
10 -1 10 0 10 1 10 2 10 3 t p
=100 µs t p
=1 ms t p
=10 ms
V
DS
(V)
K
Figure 2. Thermal impedance
GIPG100520161114ZTH
0.8
0.6
0.4
0.2
single pulse
0.0
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p
(s)
Figure 3. Output characteristics (T
J
= 25 °C)
I
D
(A)
120
GIPG100520161115OCH_25°C
V
GS
=18, 20 V
V
GS
=16 V
100
80
60
40
V
GS
=14 V
20
0
0 2 4 6
V
GS
=12 V
V
GS
=10 V
8 10 12 V
DS
(V)
Figure 5. Output characteristics (T
J
= 200 °C)
I
D
(A)
120
GIPG100520161225OCH_200°C
V
GS
=14, 16, 18, 20 V
100
80
60
40
V
GS
=12 V
V
GS
=10 V
20
0
0 2 4 6 8 10 12 V
DS
(V)
Figure 4. Output characteristics (T
J
= 150 °C)
I
D
(A)
120
GIPG100520161116OCH_150°C
V
GS
=14, 16, 18, 20 V
100
80
60
40
V
GS
=12 V
V
GS
=10 V
20
0
0 2 4 6 8 10 12 V
DS
(V)
Figure 6. Transfer characteristics
GIPG290320171115TCH
DS13585 - Rev 1 page 4/11
P tot
(W)
300
Figure 7. Total power dissipation
GIPG100520161230PD
T
J
≤ 200 ℃
250
200
150
100
50
0
-75 -25 25 75 125 175 T
C
(°C)
C
(pF)
Figure 9. Capacitance variations
GIPG100520161238CVR
C
ISS
10 3
10 2 f = 1 MHz
10 1
10 -1 10 0 10 1 10 2
C
OSS
C
RSS
V
DS
(V)
Figure 11. Switching energy vs junction temperature
E
(µJ)
1000
V
DD
I
D
R
G
= 800 V
= 40 A
V
GS
= 2.2 Ω
= -5 to 20 V
800
GIPG100520161246SWET
E tot
E on
600
400
200
0
0 50 100 150
E off
T (°C)
SCTWA50N120-4
Electrical characteristics (curves), based on HiP247 package option
Figure 8. Gate charge vs gate-source voltage
V
GS
(V)
GIPG100520161238QVG
20
V
DD
I
D
= 800 V
= 40 A
16
12
8
4
0
0 20 40 60 80 100 120 Q g
(nC)
1200
800
400
0
0
Figure 10. Switching energy vs drain current
E
(µJ)
2400
GIPG100520161241SWEC
E tot
2000
V
DD
R
G
V
GS
= 800 V
= 2.2 Ω
= -5 to 20 V
E on
1600
20 40 60 80
E off
I
D
(A)
Figure 12. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
GIPG100520161250BDV
T
J
(°C)
DS13585 - Rev 1 page 5/11
Figure 13. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
GIPG100520161251VTH
SCTWA50N120-4
Electrical characteristics (curves), based on HiP247 package option
Figure 14. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GIPG300320170836RON
T
J
(°C)
T
J
(°C)
Figure 15. Reverse conduction characteristics
(T
J
= -50 °C)
GIPG100520161253BCD I
D
(A)
-4
V
GS
= -2 V
V
GS
= 0 V
V
GS
= 5 V
-8
V
GS
= 10 V
-12
V
GS
= -5 V
-16
-20
-5 -4 -3 -2 -1
V
GS
= 20 V
V
DS
(V)
Figure 16. Reverse conduction characteristics (T
J
= 25 °C)
I
D
(A)
V
GS
= -2 V
GIPG100520161256BCD_25C
V
GS
= 0 V
-4
V
GS
= 5 V
-8
V
GS
= 10 V
V
GS
= -5 V
-12
-16
-20
-5 -4 -3
Figure 17. Reverse conduction characteristics (T
J
= 150 °C)
GIPG100520161302BCD_150C I
D
(A)
V
GS
= -2 V
V
GS
= 0 V
-4
V
GS
= 5 V
-8
V
GS
= 10 V
-12
-16
-20
-5
V
GS
= -5 V
-4 -3 -2 -1
V
GS
= 20 V
V
DS
(V)
-2 -1
V
GS
= 20 V
V
DS
(V)
DS13585 - Rev 1 page 6/11
3
3.1
SCTWA50N120-4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
HiP247-4 package information
Figure 18. HiP247-4 package outline
DS13585 - Rev 1
8405626_2 page 7/11
DS13585 - Rev 1
Dim.
L
P
E3 e e1
D2
D3
E
E1
E2
S
T
U
P1
P2
Q b2 c c1
D
D1
A
A1
A2 b b1
2.40
5.60
9.80
6.00
Min.
2.40
2.44
4.98
19.80
3.50
1.05
24.97
15.70
13.10
4.90
0
0.59
0.58
20.90
16.25
4.90
2.31
1.90
1.16
1.15
Table 7. HiP247-4 mechanical data mm
Typ.
5.00
2.41
2.00
1.20
13.30
5.00
2.50
2.54
5.08
19.92
3.60
0.60
21.00
16.55
1.20
25.12
15.80
2.50
6.15
SCTWA50N120-4
HiP247-4 package information
Max.
2.60
2.64
5.18
20.10
3.70
1.35
25.27
15.90
13.50
5.10
7.40
2.60
6.00
0.20
0.66
0.62
21.10
16.85
5.10
2.51
2.10
1.29
1.25
10.20
6.40
page 8/11
Revision history
Date
10-Dec-2020
Version
1
Table 8. Document revision history
Changes
First release.
SCTWA50N120-4
DS13585 - Rev 1 page 9/11
SCTWA50N120-4
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves), based on HiP247 package option . . . . . . . . . . . . . . . . . . . 4
3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3.1
HiP247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
DS13585 - Rev 1 page 10/11
SCTWA50N120-4
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DS13585 - Rev 1 page 11/11
