SCT10N120
Datasheet
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ
(typ., T
J
= 150 °C) in an HiP247™ package
G(1)
HiP247™
D(2, TAB)
1
2
3
S(3)
AM01475v1_noZen
Features
• Very tight variation of on-resistance vs. temperature
• Very high operating junction temperature capability (T
J
= 200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
Applications
• Solar inverters, UPS
• Motor drives
• High voltage DC-DC converters
• Switch mode power supplies
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Product status link
SCT10N120
Product summary
Order code SCT10N120
Marking
Package
Packing
SCT10N120
HiP247™
Tube
The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”.
DS10954 - Rev 3 - March 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
SCT10N120
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
1. Pulse width limited by safe operating area.
Parameter
= 25 °C
= 100 °C
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
1200
-10 to 25
12
10
24
150
-55 to 200
A
W
°C
°C
Unit
V
V
A
A
Value
1.17
40
Unit
°C/W
°C/W
DS10954 - Rev 3 page 2/13
2
SCT10N120
Electrical characteristics
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
V
GS
Table 3. On/off states
= 0 V, I
Test conditions
D
= 1 mA
I
DSS
Zero gate voltage drain current
V
DS
= 1200 V, V
GS
= 0 V
V
DS
= 1200 V, V
GS
= 0 V, T
J
= 200 °C
(1)
V
I
GSS
GS(th)
Gate-body leakage current
Gate threshold voltage
V
V
DS
DS
= 0 V, V
= V
GS
, I
GS
D
= -10 to 22 V
= 250 µA
R
DS(on)
Static drain-source on-resistance
V
GS
= 20 V, I
D
= 6 A
V
GS
= 20 V, I
D
= 6 A,
T
J
= 150 °C
V
GS
= 20 V, I
D
= 6 A,
T
J
= 200 °C
1. Defined by design, not subject to production test.
Min.
1200
1.8
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
R g
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Table 4. Dynamic
Test conditions
V
DS
= 400 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 800 V, I
D
= 6 A,
V
GS
= 0 to 20 V f = 1 MHz, I
D
= 0 A -
-
-
-
Min.
-
-
-
Typ.
Max.
3.5
500
520
580
22
3
10
8
Typ.
290
30
9
-
-
-
-
Max.
-
-
-
10
100
100
690 nC nC nC
Ω
Unit pF pF pF nA
V mΩ mΩ
Unit
V
µA
µA mΩ
Symbol
E on
E off
E on
E off
Table 5. Switching energy (inductive load)
Parameter
Turn-on switching energy
Turn-off switching energy
Turn-on switching energy
Turn-off switching energy
Test conditions
V
DD
= 800 V, I
D
= 6 A
R
G
= 10 Ω, V
GS
= -5 to 20 V
V
DD
= 800 V, I
D
= 6 A
R
G
= 10 Ω, V
GS
= -5 to 20 V
T
J
= 150 °C
Min.
-
-
-
-
Typ.
90
30
104
33
Max.
-
-
-
-
Unit
µJ
µJ
µJ
µJ
DS10954 - Rev 3 page 3/13
SCT10N120
Electrical characteristics
Symbol t d(on) t f t d(off) t r
Parameter
Turn-on delay time
Fall time
Turn-off delay time
Rise time
Table 6. Switching times
Test conditions
V
DD
= 800 V, I
D
= 6 A,
R
G
= 10 Ω, V
GS
= -5 to 20 V
Min.
-
-
-
-
Typ.
7
17
14
12
Max.
-
-
-
-
Unit ns ns ns ns
Symbol
V
SD t rr
Q rr
I
RRM
Table 7. Reverse SiC diode characteristics
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
= 6 A, V
GS
= 0 V
I
SD
= 6 A, di/dt = 2000 A/µs
V
DD
= 800 V, T
J
= 150 °C
Min
-
-
-
-
Typ.
4.3
16
107
12
Max
-
-
-
-
Unit
V ns nC
A
DS10954 - Rev 3 page 4/13
SCT10N120
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1. Safe operating area
I
D
(A)
GIPG230520161114SOA
Operation in this area is limited by R
DS(on)
10 1
10 0
T j
≤ 200 °C
T c
= 25°C single pulse
10 -1
10 -1 10 0 10 1 10 2 10 3 t p
=100 µs t p
=1 ms t p
=10 ms
V
DS
(V)
Figure 3. Output characteristics (T
J
= 25 °C)
I
D
(A)
GIPG230520161115OCH_25
V
GS
= 20 V V
GS
=16 V
10
8
V
GS
=14 V
6
4
2
0
0 2 4 6
V
GS
=12 V
V
GS
=10 V
8 10 12
V
GS
=6 V
V
DS
(V)
Figure 5. Output characteristics (T
J
= 200 °C)
I
D
(A)
10
V
GS
=14,16, 20 V
GIPG230520161116OCH_200
V
GS
=12 V
8
6
4
2
0
0 2 4
V
GS
=10 V
6
V
GS
=6 V
8 10 12 V
DS
(V)
K
Figure 2. Thermal impedance
GIPG230520161115ZTH
0.8
0.6
0.4
0.2
0
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Output characteristics (T
J
= 150 °C)
I
D
(A)
10
V
GS
=16, 20 V
GIPG230520161116OCH_150
V
GS
=14 V
8
V
GS
=12 V
6
4
V
GS
=10 V
2
0
0 2 4 6
V
GS
=6 V
8 10 12 V
DS
(V)
4
2
0
0
8
6
I
D
(A)
10
Figure 6. Transfer characteristics
GIPG230520161117TCH
V
DS
= 12 V
4
T
J
= 150 °C
8 12
T
J
= 25 °C
16 V
GS
(V)
DS10954 - Rev 3 page 5/13
SCT10N120
Electrical characteristics curves
P
TOT
(W)
150
120
90
60
30
0
-25
Figure 7. Power dissipation
GIPG230520161119PD
25 75 125 175 T
C
(°C)
C
(pF)
Figure 9. Capacitance variations
GIPG230520161122CVR
C
ISS
10 2
10 1 f = 1 MHz
C
OSS
C
RSS
10 0
10 -1 10 0 10 1 10 2
V
DS
(V)
Figure 11. Switching energy vs. junction temperature
E
(µJ)
GIPG230520161131SWET
E tot
120
E on
80
40
0
0 50
V
DD
I
D
= 800 V
= 6 A
R
G
V
GS
= 10 Ω
= -5 to 20 V
E off
100 150 T
J
(°C)
12
8
4
0
0
Figure 8. Gate charge vs gate-source voltage
V
GS
(V)
GIPG230520161121QVG
20
V
DD
= 800 V
I
D
= 6 A
16
4 8 12 16 20 Q g
(nC)
Figure 10. Switching energy vs. drain current
E
(µJ)
GIPG230520161127SWEC
320
V
DD
R
G
V
GS
= 800 V
= 10 Ω
= -5 to 20 V
E tot
E on
240
160
E off
80
0
0 4 8 12 I
D
(A)
Figure 12. Normalized V
(BR)DSS
vs. temperature
V
(BR)DSS
(norm.)
GIPG230520161133BDV
1.04
I
D
= 1 mA
1.02
1.00
0.98
0.96
0.94
-75 -25 25 75 125 175 T j
(°C)
DS10954 - Rev 3 page 6/13
SCT10N120
Electrical characteristics curves
Figure 13. Normalized gate threshold voltage vs.
temperature
V
GS(th)
(norm.)
GIPG230520161149VTH
1.4
I
D
= 250 µA
1.2
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175 T j
(°C)
Figure 15. Body diode characteristics (T
J
= -50 °C)
-8 -6 -4 -2 V
I
DS
D
(V)
(A)
-2
V
GS
= -5 V
-4
V
GS
= -2 V
-6
V
GS
= 0 V
-8
-10
GIPG230520161143BDC_-50
-12
Figure 17. Body diode characteristics (T
J
= 150 °C)
-8 -6 -4 -2 V
I
DS
D
(V)
(A)
-2
V
GS
= -5 V
-4
V
GS
= -2 V
-6
-8
-10
V
GS
= 0 V
GIPG230520161151BDC_150
-12
Figure 14. Normalized on-resistance vs. temperature
R
DS(on)
(norm.)
GIPG230520161134RON
1.2
V
GS
= 20 V
1.1
1.0
0.9
0.8
0.7
25 75 125 175 T j
(°C)
Figure 16. Body diode characteristics (T
J
= 25 °C)
-8 -6 -4 -2 V
I
DS
D
(V)
(A)
-2
V
GS
= -5 V
-4
-6
V
GS
= -2 V
-8
-10
V
GS
= 0 V
GIPG230520161146BCD_25
-12
Figure 18. 3 rd quadrant characteristics (T
J
= -50 °C)
-4 -3 -2 -1 V
DS
(V)
I
D
(A)
-2
V
GS
= 15 V
V
GS
=10 V
-4
-6
V
GS
=0 V
-8
V
GS
=5 V
-10
GIPG230520161155QC_-50
-12
DS10954 - Rev 3 page 7/13
Figure 19. 3 rd quadrant characteristics (T
J
= 25 °C)
-4 -3 -2 -1 V
DS
I
D
(V)
(A)
-2
-4
V
GS
=10 V
V
GS
= 15 V
V
GS
=0 V
-6
-8
V
GS
=5 V
-10
GIPG230520161223QC_25
-12
SCT10N120
Electrical characteristics curves
Figure 20. 3 rd quadrant characteristics (T
J
= 150 °C)
-4 -3 -2 -1 V
DS
I
D
(V)
(A)
-2
-4
V
GS
= 15 V
V
GS
=10 V
V
GS
=0 V
-6
-8
V
GS
=5 V
-10
GIPG230520161225QC_150
-12
DS10954 - Rev 3 page 8/13
SCT10N120
Test circuits
3
Test circuits
Figure 21. Switching test waveforms for transition times Figure 22. Clamped inductive switching waveform
GIPD101020141511FSR
VDS
VDS On t On t d (On) tf
90%
10%
VGS On
VDS Off
VGS
VGS Off
10% t Off t d (Off) tr
90%
10%
90%
GIPD101020141502FSR
DS10954 - Rev 3 page 9/13
4
4.1
SCT10N120
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
HiP247 package information
Figure 23. HiP247™ package outline
DS10954 - Rev 3
Dim.
A
A1 b b1 b2 c
D
Table 8. HiP247™ package mechanical data mm
Typ.
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
8396756_2
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
page 10/13
Dim.
E e
L
L1
L2
ØP
ØR
S
Min.
15.45
5.30
14.20
3.70
3.55
4.50
5.30
mm
Typ.
5.45
18.50
5.50
SCT10N120
HiP247 package information
Max.
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DS10954 - Rev 3 page 11/13
SCT10N120
Revision history
Table 9. Document revision history
Date
23-Feb-2016
23-May-2016
21-Mar-2018
Revision
1
2
3
Changes
First release
Modified: title, features and Figure 1: "Internal schematic diagram" in cover page
Modified: Table 2: "Absolute maximum ratings" and Table 3:
"Thermal data"
Modified: Table 4: "On/off states" , Table 5: "Dynamic" , Table 6:
"Switching energy (inductive load)" , Table 7: "Switching times" and
Table 8: "Reverse SiC diode characteristics"
Added: Section 4.1: "Electrical characteristics (curves)"
Minor text changes
Removed maturity status indication from cover page. The document status is production data.
Updated Section 2.1 Electrical characteristics curves .
Minor text changes.
DS10954 - Rev 3 page 12/13
SCT10N120
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DS10954 - Rev 3 page 13/13
