SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A,
59 mΩ (typ., T
J
=150 °C) in an HiP247™ package
Datasheet - production data
Features
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (T
J
= 200 °C)
Very fast and robust intrinsic body diode
Low capacitance
Applications
Solar inverters, UPS
Motor drives
High voltage DC-DC converters
Switch mode power supplies
Figure 1: Internal schematic diagram
G(1)
Order code
D(2, TAB)
SCT50N120
S(3)
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability.
These features render the device perfectly suitable for high-efficiency and high power density applications.
AM01475v1_noZen
Table 1: Device summary
Marking
SCT50N120
Package
HiP247™
Packaging
Tube
April 2017 DocID027989 Rev 4
This is information on a product in full production.
1/11 www.st.com
Contents
Contents
SCT50N120
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 5
3 Package information ....................................................................... 8
3.1
HiP247™ package information .......................................................... 8
4 Revision history ............................................................................ 10
2/11 DocID027989 Rev 4
SCT50N120
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Electrical ratings
Value
1200
-10 to 25
65
50
130
318
-55 to 200
Unit
V
V
A
A
A
W
°C
°C
Value
0.55
40
Unit
°C/W
°C/W
DocID027989 Rev 4 3/11
Electrical characteristics
2
4/11
SCT50N120
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Symbol Parameter
Table 4: On/off states
Test conditions
I
DSS
Zero gate voltage drain current
V
DS
= 1200 V, V
GS
= 0 V
V
DS
= 1200 V, V
GS
= 0 V,
T
J
= 200 °C
Min. Typ. Max. Unit
1 100 µA
10 µA
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source on-resistance
V
DS
= 0 V, V
GS
= -10 to 22 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 20 V, I
D
= 40 A
V
GS
= 20 V, I
D
= 40 A,
T
J
= 150 °C
V
GS
= 20 V, I
D
= 40 A,
T
J
= 200 °C
1.8 3.0
52
59
70
±100 nA
V
69 mΩ mΩ mΩ
Symbol
C iss
C oss
C
Q
Q
Q
R rss g gs gd g
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Symbol
Table 5: Dynamic
Test conditions
V
DS
= 400 V, f = 1 MHz,
V
GS
= 0 V
V
DD
= 800 V, I
D
= 40 A,
V
GS
= 0 to 20 V f=1 MHz open drain
Min. Typ. Max. Unit
-
-
1900
170
-
- pF pF
-
-
-
-
-
30
122
19
35
1.9
-
-
-
-
- pF nC nC nC
Ω
Table 6: Switching energy (inductive load)
Parameter Test conditions Min. Typ. Max. Unit
E on
E off
E on
E off
Turn-on switching energy V
DD
= 800 V, I
D
= 40 A
Turn-off switching energy R
G
= 2.2 Ω, V
GS
= -5 to 20 V
Turn-on switching energy V
DD
= 800 V, I
D
= 40 A
R
G
= 2.2 Ω, V
GS
= -5 to 20 V
Turn-off switching energy
T
J
= 150 °C
-
-
-
-
530
310
670
334
-
-
-
-
µJ
µJ
µJ
µJ
Symbol
V
SD t rr
Q rr
I
RRM
Table 7: Reverse SiC diode characteristics
Parameter Test conditions Min Typ. Max Unit
I
F
= 20 A, V
GS
= 0 V - Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
F
V
= 40 A, di/dt = 2000/ns
DD
= 800 V
-
-
-
-
3.5
55
230
14
-
-
V ns nC
A
DocID027989 Rev 4
SCT50N120
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Electrical characteristics
Figure 3: Thermal impedance
Figure 4: Output characteristics (T
J
= 25 °C) Figure 5: Output characteristics (T
J
= 150 °C)
Figure 6: Output characteristics (T
J
= 200 °C) Figure 7: Transfer characteristics
DocID027989 Rev 4 5/11
Electrical characteristics
Figure 8: Power dissipation
SCT50N120
Figure 9: Gate charge vs gate-source voltage
Figure 10: Capacitance variations Figure 11: Switching energy vs. drain current
Figure 12: Switching energy vs. junction temperature
Figure 13: Normalized V
(BR)DSS
vs. temperature
6/11 DocID027989 Rev 4
SCT50N120
Figure 14: Normalized gate threshold voltage vs. temperature
Electrical characteristics
Figure 15: Normalized on-resistance vs. temperature
Figure 16: Reverse conduction characteristics
(T
J
= -50 °C)
Figure 17: Reverse conduction characteristics
(T
J
= 25 °C)
Figure 18: Reverse conduction characteristics (T
J
= 150 °C)
DocID027989 Rev 4 7/11
Package information
3
3.1
Package information
SCT50N120
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
HiP247™ package information
Figure 19: H iP247™ package outline
8/11 DocID027989 Rev 4
SCT50N120
Dim. e
L
L1
L2
ØP
ØR
S b2 c
D
E
A
A1 b b1
Table 8: HiP247™ package mechanical data mm
Min. Typ.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
5.45
18.50
5.50
Package information
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DocID027989 Rev 4 9/11
Revision history
4
SCT50N120
Revision history
Date Revision
Table 9: Document revision history
Changes
17-Jun-2015
12-May-2016
23-Jun-2016
03-Apr-2017
1
2
3
4
First release
Modified title.
Modified: Table 2: "Absolute maximum ratings", Table 4: "On/off states", Table 5: "Dynamic", Table 6: "Switching energy (inductive load)", and Table 7: "Reverse SiC diode characteristics".
Added: Section 4.1: "Electrical characteristics (curves)".
Minor text changes.
Document status promoted from preliminary to production data.
Modified Table 7: "Reverse SiC diode characteristics"
Modified Figure 7: "Transfer characteristics" ,
Figure 15: "Normalized on-resistance vs. temperature" , Figure 16: "Reverse conduction characteristics (T
J
= -50 °C)" , Figure 17: "Reverse conduction characteristics (T
J
= 25 °C)" and Figure 18: "Reverse conduction characteristics (T
J
= 150 °C)"
Updated Section 3: "Package information"
Minor text changes.
10/11 DocID027989 Rev 4
SCT50N120
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