STGD19N40LZ
TAB
DPAK
Automotive-grade 390 V internally clamped IGBT
E
SCIS
180 mJ
Datasheet
-
production data
1
3
Features
• AEC-Q101 qualified
• 180 mJ of avalanche energy @ T
C
= 150 °C,
L = 3 mH
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
•
Pencil coil electronic ignition driver
G (1)
RG
RGE
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in
Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
E (3)
SC30180
Order code
STGD19N40LZ
Table 1. Device summary
Marking Packages
GD19N40LZ DPAK
Packing
Tape and reel
October 2016
This is information on a product in full production.
DocID024506 Rev 6 www.st.com
1/17
3
4
1
2
Contents
Contents
5
STGD19N40LZ
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . .11
4.2
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 DocID024506 Rev 6
STGD19N40LZ Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter Value
E
V
CES
V
ECS
I
C
(1)
I
CP
(2)
V
P
GE
TOT
SCIS
(3)
I
SCIS
Collector-emitter voltage (v
GE
= 0)
Emitter collector voltage (V
GE
= 0)
Collector current (continuous) at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
C
= 25 °C
Single pulse energy T
C
= 25 °C, L = 3 mH, V
CC
= 50 V
Single pulse energy T
C
=150 °C, L = 3 mH, V
CC
= 50 V
Avalanche current T
C
= 25 °C, L = 3 mH, V
CC
= 50 V
Avalanche current T
C
= 150 °C, L = 3 mH, V
CC
= 50 V
Human body model, R = 1.5 k Ω , C = 100 pF
Machine model, R = 0, C = 100 pF ESD
Charged device model
T
STG
T
J
Storage temperature
Operating junction temperature
1.
Calculated according to the iterative formula
I
C
( T
C
) =
R thj – c
× V
T
) ( max
–
)
(
T
T
C j max
)
, I
C
( T
C
) )
V
CES(clamped)
20
25
40
V
GE(clamped)
125
300
180
13.1
10.2
8
800
2
– 55 to 175
2.
Pulse width limited by max. junction temperature allowed
3.
For E
SCIS
test circuit refer to
Figure 16
. (Inductive load switching), with A and B not connected.
Unit
A
A
V
V
V
W mJ mJ
A
A kV
V kV
°C
Symbol
R thj-case
R thj-amb
Table 3. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient device in free air
Value
1.2
100
Unit
°C/W
°C/W
DocID024506 Rev 6 3/17
17
Electrical characteristics STGD19N40LZ
T
J
= 25 °C unless otherwise specified.
Symbol
V
CES(clamped)
Collector emitter clamped voltage
(V
GE
= 0)
V
(BR)ECS
Emitter collector break-down voltage (V
GE
= 0)
V
GE(clamped)
Gate emitter clamped voltage
I
I
CES
GES
R
R
GE
G
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage current
(V
CE
= 0)
Gate emitter resistance
Gate resistance
V
GE(th)
V
CE(sat)
Table 4. Static electrical characteristics
Parameter
Gate threshold voltage
Collector emitter saturation voltage
Test conditions
V
GE
= 4.5 V, I
C
= 10 A
V
GE
= 4.5 V, I
C
= 10 A,
T
J
= - 40 °C to 175 °C
V
GE
= 3.8 V, I
C
= 6 A
V
GE
T
= 3.8 V, I
C
= 6 A,
J
= - 40 °C to 175 °C
Min.
Typ.
Max. Unit
I
C
= 2 mA
I
C
= 2 mA, T
J
= - 40 °C to 175 °C 365
I
C
= 75 mA
I
C
= 75 mA, T
J
= - 40 °C to 175 °C 20
I
G
= ±2 mA
T
J
= - 40 °C to 175 °C
V
CE
= 15 V, T
J
= 175 °C
V
CE
= 200 V, T
J
= 175 °C
12
V
GE
= ±10 V
V
GE
T
J
= ±10 V,
= - 40 °C to 175 °C
450
0 < V
GE
< V
GE
(clamped)
V
GE
=V
CE
, I
C
= 1 mA,
V
GE
=V
CE
, I
C
= 1 mA
12
T
J
= - 40 °C 1.75
1.55
V
GE
=V
CE
, I
C
= 1 mA, T
J
= 175 °C 1.05
390
28
625
16
1.6
2.3
2.0
1.4
1.5
1.35
425
16
20
V
V
V
V
100 µA
830 µA
22
2.9
2.6
2.0
V
µA
µA k Ω k
Ω
V
V
V
V
1.85
V
V
1.65
V
4/17 DocID024506 Rev 6
STGD19N40LZ Electrical characteristics
Symbol
C ies
C oes
C res
Q g
Table 5. Dynamic electrical characteristics
Parameter Test conditions Min.
Typ. Max.
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-
-
730
85
4 -
-
pF pF pF
Gate charge
V
CE
= 280 V, I
C
= 10 A,
V
GE
= 5 V
17 nC
Symbol t t d(off) t f dv/dt t t d(on) t r d(on) t r d(off) t f dv/dt
Parameter
Resistive load
Turn-on delay time
Rise time
Resistive load
Turn-on delay time
Rise time
Inductive load
Turn-off delay time
Fall time
Turn-off voltage slope
Inductive load
Turn-off delay time
Fall time
Turn-off voltage slope
Table 6. Switching on/off
Test conditions
V
CC
= 14 V,
R
L
= 1 Ω , V
GE
= 5 V
R
G
= 1 k
Ω
V
CC
= 14 V,
R
L
R
G
= 1 Ω , V
GE
= 1 k
Ω, T
J
= 5 V,
= 150 °C
V
CC
= 300 V, L = 1 mH
I
C
= 10 A, V
GE
= 5 V,
R
G
= 1 k Ω
V
CC
= 300 V, L = 1 mH
I
C
= 10 A, V
GE
= 5 V,
R
G
= 1 k Ω, T
J
= 150 °C
Min.
Typ.
Max.
Unit
-
-
-
0.65
3.5
0.65
3.8
13.5
5.5
105
14.2
8
97
-
µs
µs
µs
µs
-
µs
µs
V/µs
-
µs
µs
V/µs
DocID024506 Rev 6 5/17
17
Electrical characteristics STGD19N40LZ
2.1 Electrical characteristics (curves)
Figure 2. Collector-emitter on voltage vs. temperature (I
C
= 6 A)
Vce (sat)
(V)
I
C
= 6 A
AM17126v1
Figure 3. Collector-emitter on voltage vs. temperature (I
C
= 10 A)
Vce (sat)
(V)
AM17127v1
1.4
1.7
Vge = 3.8 V
Ic = 10 A
1.3
Vge = 3.8 V
Vge = 4.5 V
1.2
Vge = 5 V
1.1
-75 -25 25 75 125 Tc (°C)
Figure 4. Collector-emitter on voltage vs. temperature (V
GE
= 4.5 V)
AM17128v1 V
CE
(sat)
(V)
V
GE
= 4.5 V
1.9
I
C
= 15 A
1.7
1.5
I
C
= 10 A
1.3
I
C
= 6 A
1.1
-75 -25 25 75 125 T
C
(°C)
Figure 6. Output characteristics (T
J
= 25 °C)
I
C
(A) AM17130v1
60 V
GE
= 6 V
50
40
30
20
10
0
0 2 4
V
GE
= 5.5
V
GE
= 5 V
V
GE
= 4.5
V
GE
= 4 V
V
GE
= 3.5
6 8 V
CE
(V)
1.6
1.5
Vge = 4.5 V
1.4
-75
Vge = 5 V
-25 25 75 125 Tc (°C)
Figure 5. Self clamped inductive switch
I
SCIS
(A)
50
AM17129v1
V
CC
V
GE
= 24 V
= 5 V
40
30
20
T
C
= 150°C
T
C
= 25°C
10
0
0 1 2 3 4 5 L (mH)
Figure 7. Output characteristics (T
I
C
(A)
J
= -175 °C)
AM17131v1
V
GE
= 6 V
50
V
GE
= 5.5
40
V
GE
= 5 V
30
V
GE
= 4.5
20
V
GE
= 4 V
10
V
GE
= 3.5
0
0 2 4 6 8 V
CE
(V)
6/17 DocID024506 Rev 6
STGD19N40LZ Electrical characteristics
Figure 8. Output characteristics (T
J
= -40 °C)
I
C
(A) AM17132v1
40
30
20
10
0
0
70
60
50
2 4
V
GE
= 6 V
V
GE
= 5.5 V
V
GE
= 5 V
V
GE
= 4.5 V
V
GE
= 4 V
V
GE
= 3.5 V
6 8 V
CE
(V)
Figure 10. Collector cut-off current vs. temperature
Ices
(μA)
10
V
GE
= 0 V
CE
= 350 V
AM17134v1
50
40
30
20
Figure 9. Transfer characteristics
I
C
(A)
AM17133v1
70 V
CE
= 6 V
T
J
= -40°C
60
T
J
= -25°C
T
J
= 175°C
10
0
0 1 2 3 4 5 V
GE
(V)
Figure 11. Normalized collector emitter voltage
Vces
(norm) vs. temperature (I
C
= 2 mA)
AM17135v1
Ic = 2 mA
Vge = 0 V
1.005
1
1
0.995
0.1
V
CE
= 200 V
0.99
0.01
-75 -25 25 75 125 Tc (°C)
Figure 12. Normalized gate threshold voltage vs. temperature
V
GE(th)
(norm)
AM17136v1
V
CE
= V
GE
I
C
= 1 mA
1.1
1
0.9
0.8
0.7
0.6
-75 -25 25 75 125 Tc (°C)
0.985
-75 -25 25 75 125 Tc (°C)
Figure 13. Normalized collector emitter on voltage vs. temperature (I
C
= 10 A)
V
CE(sat)
(norm)
AM17137v1
1.05
1.04
V
GE
= 4.5 V
I
C
= 10 A
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
-75 -25 25 75 125 Tc (°C)
DocID024506 Rev 6 7/17
17
Electrical characteristics
Figure 14. Thermal impedance
STGD19N40LZ
Figure 15. Transconductance vs. temperature
GFS
(S)
AM17170v1
13
I
V
C
CE
= 6 A
= 5 V
12
11
10
9
8
-75 -25 25 75 125 T
C
(°C)
8/17 DocID024506 Rev 6
STGD19N40LZ Test circuits
Figure 16. Inductive load switching and E
SCIS test circuit
Figure 17. Resistive load switching
L
Figure 18. Gate charge test circuit
AM01504v1
V
CE
Figure 19. Switching waveform
AM01504v2
V
G
I
C
Td(on)
Ton
Tr(Ion)
90%
10%
Tr(Voff)
Tcross
Td(off)
Toff
Tf
90%
10%
90%
10%
AM01505v1 AM01506v1
DocID024506 Rev 6 9/17
17
Package information STGD19N40LZ
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
10/17 DocID024506 Rev 6
STGD19N40LZ
4.1 DPAK (TO-252) type A2 package information
Package information
Figure 20. DPAK (TO-252) type A2 package outline
DocID024506 Rev 6
BW\SH$BUHY
11/17
17
Package information
Dim.
E1 e e1
H
L
L1
L2
L4
R
V2 b4 c c2
D
D1
E
A
A1
A2 b
STGD19N40LZ
Table 7. DPAK (TO-252) type A2 mechanical data mm
Typ.
Min.
5.20
0.45
0.48
6.00
4.95
6.40
2.20
0.90
0.03
0.64
5.10
2.16
4.40
9.35
1.00
2.60
0.65
0.60
5.10
5.20
2.28
2.80
0.80
0.20
0°
Max.
5.40
0.60
0.60
6.20
5.25
6.60
2.40
1.10
0.23
0.90
5.30
2.40
4.60
10.10
1.50
3.00
0.95
1.00
8°
12/17 DocID024506 Rev 6
STGD19N40LZ Package information
Figure 21. DPAK (TO-252) recommended footprint
(a)
)3BB a.
All dimensions are in millimeters
DocID024506 Rev 6 13/17
17
Package information STGD19N40LZ
T
Figure 22. Tape outline for DPAK (TO-252)
Top cover tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
F
E
W
User direction of feed
R
Bending radius
AM08852v1
14/17 DocID024506 Rev 6
STGD19N40LZ
A
Package information
Figure 23. Reel outline for DPAK (TO-252)
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
T
N
Dim.
R
T
W
K0
P0
P1
P2
D
D1
E
F
A0
B0
B1
Full radius Tape slot in core for tape start 25 mm min.
width
G measured at hub
AM08851v2
2.55
3.9
7.9
1.9
1.5
1.5
1.65
7.4
40
0.25
15.7
Min.
6.8
10.4
Table 8. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm mm
Dim.
Max.
7
10.6
12.1
1.6
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
16.4
50 1.85
7.6
2.75
4.1
8.1
2.1
0.35
16.3
Base qty.
Bulk qty.
Max.
330
13.2
18.4
22.4
2500
2500
DocID024506 Rev 6 15/17
17
Revision history STGD19N40LZ
Date
22-Apr-2013
20-May-2013
17-Apr-2014
04-Jun-2014
30-Jul-2015
05-Oct-2016
Revision
Table 9. Document revision history
Changes
1
2
3
4
5
6
Initial release.
Added Figure 15.
Modified title and features
Modified V
CES(clamped)
, V
(BR)ECS
and I
GES
test conditions
Modified Figure 5 and 9
Updated Section 4: Package information
Minor text changes
Updated features in cover page.
Text and formatting changes throughout document.
Updated Section 4: Package information
Updated Figure 9: Transfer characteristics
.
Minor text changes.
16/17 DocID024506 Rev 6
STGD19N40LZ
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics – All rights reserved
DocID024506 Rev 6 17/17
17
