STGW25S120DF3,
STGWA25S120DF3
Trench gate field-stop IGBT, S series
1200 V, 25 A low drop
Datasheet - production data
Features
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.6 V (typ.) @ IC = 25 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
72
72ORQJOHDGV
• Industrial drives
Figure 1. Internal schematic diagram
& RU7$%
• UPS
• Solar
• Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the S series of
1200 V IGBTs which is tailored to maximize
efficiency of low frequency industrial systems.
Furthermore, a positive VCE(sat) temperature
coefficient and tight parameter distribution result
in safer paralleling operation.
* ( Table 1. Device summary
Order code
Marking
Package
Packing
STGW25S120DF3
G25S120DF3
TO-247
Tube
STGWA25S120DF3
G25S120DF3
TO-247 long leads
Tube
December 2014
This is information on a product in full production.
DocID026374 Rev 2
1/18
www.st.com
Contents
STGW25S120DF3, STGWA25S120DF3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
2/18
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1
TO-247, STGW25S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2
TO-247 long leads, STGWA25S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID026374 Rev 2
STGW25S120DF3, STGWA25S120DF3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
1200
V
IC
Continuous collector current at TC = 25 °C
50
A
IC
Continuous collector current at TC = 100 °C
25
A
ICP(1)
Pulsed collector current
100
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
50
A
IF
Continuous forward current at TC = 100 °C
25
A
IFP(1)
Pulsed forward current
100
A
PTOT
Total dissipation at TC = 25 °C
375
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
Value
Unit
TJ
1. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.4
°C/W
RthJC
Thermal resistance junction-case diode
0.96
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID026374 Rev 2
3/18
18
Electrical characteristics
2
STGW25S120DF3, STGWA25S120DF3
Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
Unit
V
1.6
VGE = 15 V, IC = 25 A,
Collector-emitter saturation
TJ = 125 °C
voltage
VGE = 15 V, IC = 25 A
TJ = 175 °C
Forward on-voltage
Max.
1200
VGE = 15 V, IC = 25 A
VCE(sat)
Typ.
2.1
1.8
V
1.9
IF = 25 A
2.95
IF = 25 A TJ = 125 °C
2.25
V
IF = 25 A TJ = 175 °C
1.9
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
5
6
4.1
V
7
V
VCE = 1200 V
25
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/18
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 960 V, IC =25 A,
VGE = 15 V, see Figure 30
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID026374 Rev 2
Min.
Typ.
Max.
Unit
-
1600
-
pF
-
125
-
pF
-
61
-
pF
-
80
-
nC
-
11
-
nC
-
44
-
nC
STGW25S120DF3, STGWA25S120DF3
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Min.
Typ.
Max.
Unit
Turn-on delay time
-
31
-
ns
Current rise time
-
11.8
-
ns
-
1661
-
A/µs
-
147
-
ns
-
269
-
ns
Turn-on current slope
VCE = 600 V, IC = 25 A,
VGE = 15 V, RG= 15 Ω
see Figure 29
Turn-off delay time
Current fall time
Turn-on switching losses
-
0.83
-
mJ
(2)
Turn-off switching losses
-
2.37
-
mJ
Total switching losses
-
3.2
-
mJ
Turn-on delay time
-
28
-
ns
Current rise time
-
15
-
ns
Turn-on current slope
-
1360
-
A/µs
-
156
-
ns
-
437
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
VCE = 600 V, IC = 25 A,
RG= 15 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 29
Turn-off delay time
Current fall time
(1)
Turn-on switching losses
-
1.52
-
mJ
(2)
Turn-off switching losses
-
3.36
-
mJ
Ets
Total switching losses
-
4.88
-
mJ
tsc
Short-circuit withstand time
-
µs
Eon
Eoff
1.
Test conditions
(1)
Eon
Eoff
Parameter
VCC ≤ 600V, VGE= 15V, TJstart
≤ 150°C, VP < 1200V
10
Energy losses include reverse recovery of the diode.
2. Turn-off losses also include the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
265
-
ns
-
1200
-
nC
-
19
-
A
-
1090
-
A/µs
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dlrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
0.22
-
mJ
trr
Reverse recovery time
-
584
-
ns
Qrr
Reverse recovery charge
-
5000
-
nC
Irrm
Reverse recovery current
-
30
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
270
-
A/µs
Err
Reverse recovery energy
-
0.75
-
mJ
IF = 25 A, VR = 600 V,
VGE = 15 V,
di/dt = 1000 A/µs,
(see Figure 29)
IF = 25 A, VR = 600 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 1000 A/µs,
(see Figure 29)
DocID026374 Rev 2
5/18
18
Electrical characteristics
2.1
STGW25S120DF3, STGWA25S120DF3
Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
*,3*/0
3727
:
*,3*/0
,& $
9*(97 -&
7& &
9*(97 -&
Figure 4. Output characteristics (TJ = 25 °C)
Figure 5. Output characteristics (TJ = 175 °C)
*,3*/0
,& $
*,3*/0
,& $
9*( 9
9
9*( 9
9
9
7& &
9
9
9
9
9
9&( 9
Figure 6. VCE(sat) vs. junction temperature
*,3*/0
9&( 6$7
9
9&( 9
Figure 7. VCE(sat) vs. collector current
*,3*/0
9&( 6$7
9
7- &
,& $
9*( 9
9*( 9
7- &
,& $
7- &
,& $
6/18
7- &
DocID026374 Rev 2
,& $
STGW25S120DF3, STGWA25S120DF3
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
*,3*/0
,&
$
7& &
Figure 9. Forward bias safe operating area
*,3*/0
,&
$
V
V
7& &
V
5HFWDQJXODUFXUUHQWVKDSH
GXW\F\FOH 9&& 9
5* ȍ9*( 97- &
7F &
I N+]
Figure 10. Transfer characteristics
,&
$
*,3*/0
9&( 9
PV
6LQJOHSXOVH
9&( 9
Figure 11. Diode VF vs. forward current
*,3*/0
9) 9
7- &
7- &
7- &
Figure 12. Normalized VGE(th) vs. junction
temperature
*,3*/0
9*( 7+
9*( 9
QRUP
,) $
Figure 13. Normalized VBR(CES) vs. junction
temperature
*,3*/0
9 %5 &(6
QRUP
,& P$
,& P$9&( 9*(
7- &
7- &
7- &
DocID026374 Rev 2
7- &
7/18
18
Electrical characteristics
STGW25S120DF3, STGWA25S120DF3
Figure 14. Capacitance variations
Figure 15. Gate charge vs. gate-emitter voltage
*,3*/0
&
S)
*,3*/0
9*(
9
9&& 9 ,& $, * P$
I 0+]
&LHV
&RHV
&UHV
Figure 16. Switching loss vs. collector current
(
P-
9&( 9
5* ȍ9&&
4J Q&
Figure 17. Switching loss vs. gate resistance
*,3*/0
(
P-
&
97- 9
9*( *,3*/0
,& $9&&
&
97- 9
9*( (RII
(RII
(RQ
(RQ
,& $
Figure 18. Switching loss vs. temperature
,& $9&&
ȍ
95* 9*( 9
5* ȍ
Figure 19. Switching loss vs. collector emitter
voltage
*,3*/0
(
P
*,3*/0
(
P-
(RII
(RII
(RQ
(RQ
,& $9*(
8/18
7- &
DocID026374 Rev 2
ȍ
9 5* 7M &
9&( 9
STGW25S120DF3, STGWA25S120DF3
Electrical characteristics
Figure 20. Short-circuit time and current vs VGE Figure 21. Switching times vs. collector current
*,3*/0
W6&
>V@
*,3*/0
W
QV
,VF
>$@
WI
9&& 97- &
WG RII
,6&
W 6&
9
WG RQ
9*(
Figure 22. Switching times vs. gate resistance
WU
9&& 99*( 95* ȍ7M &
,& $
Figure 23. Reverse recovery current vs. diode
current slope
,UUP
$
*,3*/0
W
QV
WI
*,3*/0
9&& 99*( 9,) &
$
7- WG RII
WG RQ
WU
9&& 99*( 9,) $
&
7- Figure 24. Reverse recovery time vs. diode
current slope
WUU
QV
5* ȍ
*,3*/0
GLGW $V
Figure 25. Reverse recovery charge vs. diode
current slope
4UU
&
9&& 99*( 9,) &
$
7- *,3*/0
9&& 99*( 9 ,) $7M &
GLGW $V
DocID026374 Rev 2
GLGW $V
9/18
18
Electrical characteristics
STGW25S120DF3, STGWA25S120DF3
Figure 26. Reverse recovery energy vs. diode
current slope
*,3*/0
(UU
P-
9&& 99*( 9,) &
$
7- 10/18
GLGW>$V@
DocID026374 Rev 2
STGW25S120DF3, STGWA25S120DF3
Electrical characteristics
Figure 27. Thermal impedance for IGBT
=WK727B$
.
į 6LQJOHSXOVH
WS V
Figure 28. Thermal impedance for diode
.
*&
į 6LQJOHSXOVH
DocID026374 Rev 2
WS V
11/18
18
Test circuits
3
STGW25S120DF3, STGWA25S120DF3
Test circuits
Figure 29. Test circuit for inductive load
switching
Figure 30. Gate charge test circuit
AM01504v1
Figure 31. Switching waveform
AM01505v1
Figure 32. Diode reverse recovery waveform
90%
VG
IF
trr
90%
VCE
Qrr
di/dt
10%
ts
tf
10%
Tr(Voff)
Tcross
10% IRRM
90%
IC
Tr(Ion)
Ton
IRRM
10%
Td(off)
Td(on)
t
VRRM
Tf
Toff
dv/dt
AM01506v1
12/18
DocID026374 Rev 2
AM01507v1
STGW25S120DF3, STGWA25S120DF3
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
4.1
TO-247, STGW25S120DF3
Figure 33. TO-247 outline
0075325_H
DocID026374 Rev 2
13/18
18
Package information
STGW25S120DF3, STGWA25S120DF3
Table 8. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
14/18
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID026374 Rev 2
5.70
STGW25S120DF3, STGWA25S120DF3
4.2
Package information
TO-247 long leads, STGWA25S120DF3
Figure 34. TO-247 long lead outline
8463846_A_F
DocID026374 Rev 2
15/18
18
Package information
STGW25S120DF3, STGWA25S120DF3
Table 9. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
16/18
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
DocID026374 Rev 2
6.25
STGW25S120DF3, STGWA25S120DF3
5
Revision history
Revision history
Table 10. Document revision history
Date
Revision
16-May-2014
1
Initial release.
2
Updated Section 1: Electrical ratings and Section 2: Electrical
characteristics.
Inserted Section 2.1: Electrical characteristics (curves).
Updated Section 4: Package information.
18-Dec-2014
Changes
DocID026374 Rev 2
17/18
18
STGW25S120DF3, STGWA25S120DF3
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