STB6N60M2,
STD6N60M2
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2
Power MOSFETs in D2PAK and DPAK packages
Datasheet - production data
Features
Order code
TAB
STB6N60M2
TAB
1
3
2
D PAK
STD6N60M2
3
1
VDS @
TJmax
RDS(on)
max
ID
650 V
1.2 Ω
4.5 A
• Extremely low gate charge
DPAK
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
Figure 1. Internal schematic diagram
, TAB
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
AM15572v1
Table 1. Device summary
Order code
Marking
Package
D2PAK
STB6N60M2
6N60M2
STD6N60M2
May 2016
This is information on a product in full production.
Packing
Tape and reel
DPAK
DocID024772 Rev 3
1/21
www.st.com
Contents
STB6N60M2, STD6N60M2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
.............................................. 9
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
D²PAK(TO-263) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
DPAK(TO-252) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Value
Unit
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
4.5
A
ID
Drain current (continuous) at TC = 100 °C
2.9
A
IDM (1)
Drain current (pulsed)
18
A
PTOT
W
VGS
Parameter
Total dissipation at TC = 25 °C
60
dv/dt
(2)
Peak diode recovery voltage slope
15
dv/dt
(3)
MOSFET dv/dt ruggedness
50
Tstg
Tj
V/ns
Storage temperature range
-55 to 150
°C
Operating junction temperature range
1. Pulse width limited by safe operating area
2. ISD ≤ 4.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
3. VDS ≤ 480 V
Table 3. Thermal data
Value
Symbol
Rthj-case
Rthj-pcb
Parameter
Thermal resistance junction-case max
Thermal resistance junction-pcb
Unit
D2PAK
max(1)
DPAK
2.08
30
°C/W
50
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
1
A
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID= IAR; VDD= 50 V)
86
mJ
DocID024772 Rev 3
3/21
21
Electrical characteristics
2
STB6N60M2, STD6N60M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
IDSS
VDS = 600 V
Zero gate voltage
drain current (VGS = 0) VDS = 600 V, TC=125 °C(1)
IGSS
Gate-body leakage
current (VDS = 0)
Min.
Typ.
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
Unit
600
V
1
µA
100
µA
±10
µA
3
4
V
1.06
1.2
Ω
Min.
Typ.
Max.
Unit
-
232
-
pF
-
14
-
pF
-
0.7
-
pF
VGS = ± 25 V
VGS(th)
Max.
2
VGS = 10 V, ID = 2.25 A
1. Defined by design, not subject to production test
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
71
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.5
-
Ω
Qg
Total gate charge
-
8.2
-
nC
Qgs
Gate-source charge
-
1.7
-
nC
Qgd
Gate-drain charge
VDD = 480 V, ID = 4.5 A,
VGS = 10 V
(see Figure 16)
-
4.2
-
nC
VDS = 100 V, f = 1 MHz,
VGS = 0
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/21
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 300 V, ID = 1.65 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15 and Figure 20)
Fall time
DocID024772 Rev 3
Min.
Typ.
Max.
Unit
-
9.5
-
ns
-
7.4
-
ns
-
24
-
ns
-
22.5
-
ns
STB6N60M2, STD6N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
4.5
A
ISDM
(1)
Source-drain current (pulsed)
-
18
A
VSD
(2)
Forward on voltage
-
1.6
V
ISD
trr
ISD = 4.5 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 17)
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 17)
-
274
ns
-
1.47
µC
-
10.7
A
-
376
ns
-
1.96
µC
-
10.5
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID024772 Rev 3
5/21
21
Electrical characteristics
2.1
STB6N60M2, STD6N60M2
Electrical characteristics (curves)
Figure 2. Safe operating area for D2PAK
Figure 3. Thermal impedance for D2PAK
AM15885v1
ID
(A)
10
)
Op
Lim era
ite tion
d
by in t
m his
ax ar
RD ea
S(
is
on
10µs
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
10
1
0.1
100
VDS(V)
Figure 4. Safe operating area for DPAK
Figure 5. Thermal impedance for DPAK
AM15875v1
ID
(A)
10
)
Op
Lim era
ite tion
d
by in t
m his
ax ar
RD ea
S(
is
on
10µs
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
10
1
0.1
100
VDS(V)
Figure 6. Output characteristics
Figure 7. Transfer characteristics
AM15876v1
ID
(A)
8
VGS= 8, 9, 10 V
VGS= 7 V
7
AM15877v1
ID
(A)
8
VDS= 20 V
7
6
6
VGS= 6 V
5
5
4
4
3
3
VGS= 5 V
2
2
1
1
VGS= 4 V
0
0
6/21
5
10
15
0
20
VDS(V)
DocID024772 Rev 3
0
2
4
6
8
10 VGS(V)
STB6N60M2, STD6N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
AM15878v1
VDS
VGS
(V)
12
VDD = 480V
ID = 4.5 A
VDS
10
Figure 9. Static drain-source on-resistance
(V)
RDS(on)
(Ω)
500
1.120
400
1.100
300
1.080
200
1.060
100
1.040
AM15879v1
VGS=10V
8
6
4
2
0
0
4
2
6
8
0
Qg(nC)
Figure 10. Capacitance variations
0
1
2
4
3
ID(A)
Figure 11. Normalized VDS vs temperature
AM15880v1
C
(pF)
1.020
AM15881v1
VDS
(norm)
ID =1 mA
1.11
1000
1.09
Ciss
1.07
1.05
100
1.03
10
Coss
1.01
Crss
0.97
0.99
1
0.95
0.1
0.1
100
10
1
VDS(V)
Figure 12. Normalized gate threshold voltage vs
temperature
AM15882v1
VGS(th)
(norm)
0.93
-50 -25
0
25
50
75
100
TJ(°C)
Figure 13. Normalized on-resistance vs
temperature
AM15883v1
RDS(on)
(norm)
VGS=10 V
2.3
1.1
ID=250 µA
2.1
1.9
1.0
1.7
1.5
0.9
1.3
1.1
0.8
0.9
0.7
-50 -25
0.7
0.5
-50 -25
0
25
50
75
100
TJ(°C)
DocID024772 Rev 3
0
25
50
75
100
TJ(°C)
7/21
21
Electrical characteristics
STB6N60M2, STD6N60M2
Figure 14. Source-drain diode forward
characteristics
AM15884v1
VSD
(V)
1.4
1.2
TJ=-50°C
1
0.8
0.6
TJ=150°C
TJ=25°C
0.4
0.2
0
0
8/21
1
2
3
4
ISD(A)
DocID024772 Rev 3
STB6N60M2, STD6N60M2
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
2200
μF
VD
VGS
RG
100Ω
Vi=20V=VGMAX
VDD
D.U.T.
VG
2.7kΩ
D.U.T.
47kΩ
PW
1kΩ
PW
AM01469v1
AM01468v1
Figure 17. est circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
L
A
A
A
VD
D
G
D.U.T.
FAST
DIODE
B
B
2200
μF
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
3.3
μF
VDD
ID
VDD
G
Vi
RG
D.U.T.
S
Pw
AM01471v1
AM01470v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
ton
9 %5 '66
tdon
9'
toff
tr
tdoff
tf
90%
90%
,'0
10%
,'
9''
10%
0
9''
VDS
90%
VGS
$0Y
0
DocID024772 Rev 3
10%
AM01473v1
9/21
21
Package information
4
STB6N60M2, STD6N60M2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
4.1
Package information
D²PAK(TO-263) package information
Figure 21. D²PAK (TO-263) type A package outline
B$BUHY
DocID024772 Rev 3
11/21
21
Package information
STB6N60M2, STD6N60M2
Table 9. D²PAK (TO-263) type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
12/21
Max.
0.4
0°
8°
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Package information
Figure 22. D²PAK footprint(a)
)RRWSULQW
a. All dimension are in millimeters
DocID024772 Rev 3
13/21
21
Package information
4.2
STB6N60M2, STD6N60M2
DPAK(TO-252) package information
Figure 23. DPAK (TO-252) type C outline
B&B
14/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
Package information
Table 10. DPAK (TO-252) type C package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.30
2.38
A1
0.90
1.01
1.10
A2
0.00
0.10
b
0.72
0.85
b4
5.13
c
0.47
0.60
c2
0.47
0.60
D
6.00
D1
5.25
E
5.33
5.46
6.10
6.20
6.50
6.60
6.70
e
2.186
2.286
2.386
E1
4.70
H
9.80
10.10
10.40
L
1.40
1.50
1.70
L1
L2
2.90 REF
0.90
1.25
L3
L4
0.51 BSC
0.60
0.80
L6
1.00
1.80 BSC
Θ1
5°
7°
9°
Θ2
5°
7°
9°
V2
0°
8°
DocID024772 Rev 3
15/21
21
Package information
STB6N60M2, STD6N60M2
Figure 24. DPAK (TO-252) footprint (b)
)35HY
b. All dimensions are in millimeters
16/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
5
Packing information
Packing information
Table 11. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID024772 Rev 3
Min.
Max.
330
13.2
26.4
30.4
17/21
21
Packing information
STB6N60M2, STD6N60M2
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
18/21
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
DocID024772 Rev 3
18.4
22.4
STB6N60M2, STD6N60M2
Packing information
Figure 25. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
W
K0
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 26. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
DocID024772 Rev 3
19/21
21
Revision history
6
STB6N60M2, STD6N60M2
Revision history
Table 13. Document revision history
Date
Revision
Changes
11-Jun-2013
1
First release.
09-Jul-2013
2
– Minor text changes
– Modified: Rthj-case value for D2PAK in table 3
Updated title, features and description.
Updated Table 6: Dynamic and Table 8: Source drain diode.
30-May-2016
3
Updated Section 4: Package information and Section 5: Packing
information.
Minor text changes.
20/21
DocID024772 Rev 3
STB6N60M2, STD6N60M2
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics – All rights reserved
DocID024772 Rev 3
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