STB13N60M2, STD13N60M2
Datasheet
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ M2 Power MOSFETs in D²PAK and DPAK packages
TAB
2
D 2 PAK
1
3
TAB
DPAK
1
2
3
G(1)
D(2, TAB)
S(3)
NG1D2TS3Z
Features
Order code V
DS
@T
JMAX.
R
DS(on)
max.
STB13N60M2
650 V 0.38 Ω
STD13N60M2
• Extremely low gate charge
• Excellent output capacitance (C
OSS
) profile
• 100% avalanche tested
• Zener-protected
I
D
11 A
Package
D²PAK
DPAK
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Product status link
STB13N60M2
STD13N60M2
Product summary
Order code STB13N60M2
Marking
Package
Packing
Order code
13N60M2
D²PAK
Tape and reel
STD13N60M2
Marking
Package
Packing
13N60M2
DPAK
Tape and reel
DS9632 - Rev 5 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STB13N60M2, STD13N60M2
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
V
GS
I
D
I
D
I
DM
(1)
P
TOT dv/dt
(2)
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total power dissipation at T
C
C
C
= 25 °C
= 100 °C
= 25 °C dv/dt
(3)
T stg
T j
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width limited by safe operating area.
2. I
SD
≤ 11 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
= 400 V
3. V
DS
≤ 480 V.
Table 2. Thermal data
Symbol Parameter
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case
Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
D²PAK
Value
DPAK
1.14
30 50
Value
± 25
11
7
44
110
15
50
- 55 to 150
Table 3. Avalanche characteristics
Symbol Parameter
I
AR
E
AS
Avalanche current, repetetive or not repetetive (pulse width limited by T
Single pulse avalanche energy (starting T j
= 25 °C, I
D jmax.
= I
AR
; V
DD
= 50 V)
)
°C
Unit
°C/W
Value Unit
2.8
A
125 mJ
Unit
V
A
A
A
W
V/ns
DS9632 - Rev 5 page 2/23
2
STB13N60M2, STD13N60M2
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4. On/off-states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero-gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source onresistance
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V, T
C
= 125 °C
(1)
V
V
V
DS
DS
GS
1. Defined by design, not subject to production test.
= 0 V, V
GS
= V
GS
, I
D
= 10 V, I
D
= ±25 V
= 250 µA
= 5.5 A
Min.
600
Typ.
2 3
0.35
1
100
±10
4
0.38
Max.
Unit
V
µA
µA
µA
V
Ω
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Test conditions
V
DS
= 100 V, f = 1 MHz, V
GS
Equivalent output capacitance V
DS
= 0 to 480 V, V
GS
= 0 V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
Total gate charge
Gate-source charge
Gate-drain charge
= 0 V
V
DD
= 480 V, I
D
= 11 A, V
GS
= 0 to 10 V
(see
Figure 16. Test circuit for gate charge behavior
)
Min.
-
-
-
-
-
-
-
-
Typ.
580
32
1.1
120
6.6
17
2.5
9
Max.
-
-
-
-
-
-
-
-
Unit pF pF pF pF
Ω nC nC nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V to 80% V
DSS.
DS
increases from 0
Symbol Parameter t d(on) t r t d(off) t f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
V
GS
= 300 V, I
D
= 5.5 A, R
G
= 4.7 Ω,
= 10 V (see Figure 15. Test circuit for resistive load switching times and
Figure 20. Switching time waveform
)
Min.
-
-
-
-
Typ.
11
10
41
9.5
Max.
-
-
-
-
Unit ns ns ns ns
DS9632 - Rev 5 page 3/23
STB13N60M2, STD13N60M2
Electrical characteristics
Table 7. Source-drain diode
Symbol Parameter
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
Test conditions
V
(see
T
GS
SD
SD j
= 0 V, I
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
SD
= 11 A
= 11 A, di/dt = 100 A/µs, V
DD
= 11 A, di/dt = 100 A/µs, V
DD
= 60 V,
= 150 °C (see Figure 17. Test circuit for inductive load switching and diode recovery times
)
= 60 V
Figure 17. Test circuit for inductive load switching and diode recovery times )
-
-
-
-
-
-
Min.
-
-
-
297
2.8
18.5
394
3.8
19
Typ.
Max.
11
44
1.6
ns
µC
A ns
µC
A
Unit
A
A
V
DS9632 - Rev 5 page 4/23
STB13N60M2, STD13N60M2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for D 2 PAK
AM15710v1
I
D
(A)
10
1
0.1
0.1
R DS(on)
in this area is
by max.
1
10 µs
100 µs
1 ms
10
Tj=150 °C
Tc=25 °C
Single pulse
100 V
DS
(V)
10 ms
Figure 3. Safe operating area for DPAK
AM15711v1
I
D
(A)
10
1
0.1
0.1
10 µs
DS(on)
in this area is
by max. R
1
100 µs
1 ms
10
Tj=150 °C
Tc=25 °C
Single pulse
10 ms
100 V
DS
(V)
8
4
0
0
Figure 5. Output characteristics
AM15712v1
I D
(A)
20
V GS =7, 8, 9, 10V
6V
16
12
5V
4 8 12 16
4V
V DS (V)
Figure 2. Thermal impedance for D 2 PAK
Figure 4. Thermal impedance for DPAK
K
GC20460
10 0
10 -1
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 6. Transfer characteristics
AM15713v1
I D (A)
20
V DS =18 V
16
12
8
4
0
0 2 4 6 8 V
GS
(V)
DS9632 - Rev 5 page 5/23
Figure 7. Normalized V
(BR)DSS
vs. temperature
AM15714v1
V (BR)DSS
(norm)
1.1
I D =1 mA
1.06
1.02
0.98
0.94
0.9
-50 0 50 100 T
J
(°C)
Figure 9. Gate charge vs. gate-source voltage
V GS
(V)
10
V DS
V DD = 480 V
I D =11 A
AM15716v1
V DS
(V)
500
8 400
6 300
4
2
0
0 4 8 12
200
100
16
0
Q g (nC)
Figure 11. Normalized gate threshold voltage vs.
temperature
V GS(th)
(norm)
AM15718v1
1.1
I
D
=250µA
1.0
0.9
0.8
0.7
0.6
-50 0 50 100 T J (°C)
STB13N60M2, STD13N60M2
Electrical characteristics (curves)
Figure 8. Static drain-source on-resistance
R
(Ω)
AM15715v1
V
GS
=10 V
0.370
0.360
0.350
0.340
0.330
0 2 4 6 8 10 I D (A)
Figure 10. Capacitance variations
AM15717v1
C
(pF)
1000
Ciss
100
Coss
10
1
0.1
0.1
1 10
Crss
100 V DS (V)
Figure 12. Normalized on-resistance vs. temperature
R
DS(on)
(norm)
AM15719v1
2.1
I
D
= 5.5 A
V
GS
= 10 V
1.7
1.3
0.9
0.5
-50 0 50 100 T J (°C)
DS9632 - Rev 5 page 6/23
Figure 13. Source-drain diode forward characteristics
AM15720v1
V
SD
(V)
T J =-50 °C
1
0.9
T J =25 °C
0.8
0.7
T
J
=150 °C
0.6
0.5
0 2 4 6 8 10 I SD
STB13N60M2, STD13N60M2
Electrical characteristics (curves)
Figure 14. Output capacitance stored energy
AM15721v1
Eoss (µJ)
4
3
2
1
0
0 100 200 300 400 500 V DS (V)
DS9632 - Rev 5 page 7/23
STB13N60M2, STD13N60M2
Test circuits
3
Test circuits
Figure 15. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 17. Test circuit for inductive load switching and diode recovery times
Figure 16. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 18. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 19. Unclamped inductive waveform
V (BR)DSS
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 20. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS9632 - Rev 5 page 8/23
4
STB13N60M2, STD13N60M2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS9632 - Rev 5 page 9/23
4.1
STB13N60M2, STD13N60M2
D²PAK (TO-263) type A package information
D²PAK (TO-263) type A package information
Figure 21. D²PAK (TO-263) type A package outline
DS9632 - Rev 5
0079457_25 page 10/23
DS9632 - Rev 5
Dim.
e1
H
J1
L
L1
L2
R
V2
D
D1
D2
E
E1
E2 e
A
A1 b b2 c c2
STB13N60M2, STD13N60M2
D²PAK (TO-263) type A package information
Table 8. D²PAK (TO-263) type A package mechanical data mm
Typ.
1.14
0.45
1.23
8.95
7.50
Min.
4.40
0.03
0.70
1.10
10.00
8.30
6.85
7.75
1.30
8.50
7.05
2.54
4.88
15.00
2.49
2.29
1.27
1.30
0.40
0°
5.28
15.85
2.69
2.79
1.40
1.75
8°
1.70
0.60
1.36
9.35
8.00
Max.
4.60
0.23
0.93
1.50
10.40
8.70
7.25
page 11/23
DS9632 - Rev 5
STB13N60M2, STD13N60M2
D²PAK (TO-263) type A package information
Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint page 12/23
4.2
STB13N60M2, STD13N60M2
DPAK (TO-252) type A2 package information
DPAK (TO-252) type A2 package information
Figure 23. DPAK (TO-252) type A2 package outline
DS9632 - Rev 5
0068772_type-A2_rev26 page 13/23
DS9632 - Rev 5
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
L1
STB13N60M2, STD13N60M2
DPAK (TO-252) type A2 package information
Table 9. DPAK (TO-252) type A2 mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
5.10
2.159
4.445
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
5.20
2.286
4.572
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
5.30
2.413
4.699
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 14/23
4.3
STB13N60M2, STD13N60M2
DPAK (TO-252) type C2 package information
DPAK (TO-252) type C2 package information
Figure 24. DPAK (TO-252) type C2 package outline
DS9632 - Rev 5
0068772_type-C2_rev26 page 15/23
DS9632 - Rev 5
Dim.
L
L1
L2
L3
L4
L6
θ1
θ2
V2 c2
D
D1
E
E1 e
H
A
A1
A2 b b4 c
STB13N60M2, STD13N60M2
DPAK (TO-252) type C2 package information
Table 10. DPAK (TO-252) type C2 mechanical data
0.72
5.13
0.47
0.47
6.00
Min.
2.20
0.90
0.00
5.10
6.50
5.20
2.186
9.80
1.40
mm
Typ.
2.30
1.01
5.33
6.10
6.60
2.286
10.10
1.50
2.90 REF
0.90
0.60
5°
5°
0°
0.51 BSC
0.80
1.80 BSC
7°
7°
1.00
9°
9°
8°
0.85
5.46
0.60
0.60
6.20
Max.
2.38
1.10
0.10
5.60
6.70
5.50
2.386
10.40
1.70
1.25
page 16/23
STB13N60M2, STD13N60M2
DPAK (TO-252) type C2 package information
Figure 25. DPAK (TO-252) recommended footprint (dimensions are in mm)
DS9632 - Rev 5 page 17/23
4.4
D²PAK and DPAK packing information
Figure 26. Tape outline
STB13N60M2, STD13N60M2
D²PAK and DPAK packing information
DS9632 - Rev 5 page 18/23
DS9632 - Rev 5
A
STB13N60M2, STD13N60M2
D²PAK and DPAK packing information
D
B
Full radius
Figure 27. Reel outline
T
40mm min. access hole at slot location
Tape slot in core for tape start
2.5mm min.width
C
N
G measured at hub
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
D
D1
Min.
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
Tape
Table 11. D²PAK tape and reel mechanical data
Reel mm
Dim.
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
C
D
A
B
G
N
T
Base quantity
Bulk quantity
Min.
1.5
12.8
20.2
24.4
100
0.35
24.3
mm
AM06038v1
Max.
330
13.2
26.4
30.4
1000
1000 page 19/23
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
STB13N60M2, STD13N60M2
D²PAK and DPAK packing information
Tape
Table 12. DPAK tape and reel mechanical data
Reel mm
Min.
6.8
10.4
1.5
1.5
1.65
7.4
2.55
3.9
7.9
1.9
40
0.25
15.7
1.85
7.6
2.75
4.1
8.1
2.1
Max.
7
10.6
12.1
1.6
0.35
16.3
Dim.
N
T
D
G
A
B
C
Base qty.
Bulk qty.
Min.
1.5
12.8
20.2
16.4
50 mm
Max.
330
13.2
18.4
22.4
2500
2500
DS9632 - Rev 5 page 20/23
STB13N60M2, STD13N60M2
Revision history
Table 13. Document revision history
Date
22-Apr-2013
Revision Changes
1 First release.
28-Jun-2013
03-Mar-2014
2
3
– Document status promoted from preliminary data to production data
- Minor text changes
– Updated: Table 10 and Table 25
- Minor text changes
12-Sep-2016
12-Feb-2019
4
5
Updated the title, features and the description.
Updated D²PAK (TO-263) type A package information, Section 4.2 DPAK (TO-252) type A2 package information , Section 4.3 DPAK (TO-252) type C2 package information and Section 4.4 D²PAK and
DPAK packing information.
Updated Section 4 Package information
.
Minor text changes.
DS9632 - Rev 5 page 21/23
STB13N60M2, STD13N60M2
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1
D²PAK package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3
DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.4
D²PAK and DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
DS9632 - Rev 5 page 22/23
STB13N60M2, STD13N60M2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
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ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS9632 - Rev 5 page 23/23
