STGD10NC60SD
STGF10NC60SD
10 A, 600 V fast IGBT
Features
■
■
■
Optimized performance for medium operating frequencies up to 5 kHz in hard switching
Low on-voltage drop (V
CE(sat)
)
Very soft ultra fast antiparallel diode
Application
■ Motor drive
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
TA
B
1
3
DPAK
1
2
3
TO-220FP
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order codes
STGD10NC60SDT4
STGF10NC60SD
Marking
GD10NC60SD
GF10NC60SD
Package
DPAK
TO-220FP
Packaging
Tape and reel
Tube
June 2010 Doc ID 15847 Rev 2 1/16 www.st.com
16
5
6
3
4
1
2
Contents
Contents
STGD10NC60SD, STGF10NC60SD
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 15847 Rev 2
STGD10NC60SD, STGF10NC60SD Electrical ratings
Table 2.
Absolute maximum ratings
Symbol Parameter
V
CES
I
C
(1)
I
C
(1)
I
CL
(2)
I
CP
(3)
I
F
Collector-emitter voltage (V
Turn-off latching current
GE
= 0)
Continuous collector current at T
Continuous collector current at T
C
C
= 25°C
= 100°C
I
FSM
Pulsed collector current
Diode RMS forward current at T
C
=25 °C
Surge non repetitive forward current t p
= 10 ms sinusoidal
V
GE
P
V
TOT
ISO
T j
Gate-emitter voltage
Total dissipation at T
C
= 25 °C
Isolation withstand voltage (RMS) from all three leads to external heat sink (t = 1 sec; T
C
= 25 °C)
Operating junction temperature
1.
Calculated according to the iterative formula:
Value
DPAK
600
TO-220FP
18
10
10
5
14
25
10
Unit
A
A
V
A
A
A
20
± 20
60 25
2500
-55 to 150
A
V
W
V
°C
I
C
( T
C
) =
T
----------------------------------------------------------------------------------------------------------
R thj – c
V
) ( max )
(
T
T j max )
I
C
( T
C
) )
2.
V clamp
= 80%,(V
CES
), T j
=150 °C, R
G
= 10
Ω
, V
GE
= 15 V.
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Table 3.
Symbol
Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
DPAK
2.08
Value
4.5
TO-220FP
5
100 62.5
Unit
°C/W
°C/W
°C/W
Doc ID 15847 Rev 2 3/16
Electrical characteristics STGD10NC60SD, STGF10NC60SD
(T
J
=25°C unless otherwise specified)
Table 4.
Symbol
Static
Parameter Test conditions Min.
Typ.
Max. Unit
V
(BR)CES
Collector-emitter breakdown voltage (V
GE
= 0)
I
C
= 1 mA
V
V
CE(sat)
GE(th)
Collector-emitter saturation voltage
Gate threshold voltage
V
GE
= 15 V, I
C
= 5 A
V
GE
= 15 V, I
C
= 5 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 250 µA
I
I
CES
GES g fs
Collector cut-off current
(V
GE
=0)
V
CE
= 600 V
V
CE
=600 V, T
J
=125 °C
Gate-emitter leakage
(V
CE
=0)
V
GE
= ±20 V
Forward transconductance V
CE
= 15 V
,
I
C
= 5 A
600
3.75
1.45
1.45
3.5
1.65
5.75
150
1
±100
V
V
V
V
µA mA nA
S
Table 5.
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
V
CE
V
GE
Test conditions
= 25 V, f = 1 MHz, V
GE
= 480 V, I
= 15 V
Figure 18
C
= 5 A,
= 0
Min.
Typ.
Max.
Unit
-
-
365
44
8
18
8
3.5
-
pF pF pF nC nC nC
4/16 Doc ID 15847 Rev 2
STGD10NC60SD, STGF10NC60SD Electrical characteristics
Table 6.
Symbol t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope t r
(V off
) t d
( off
) t f t r
(V off
) t d
( off
) t f
Switching on/off (inductive load)
Parameter Test conditions t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390 V, I
C
= 5 A
R
G
= 10 Ω , V
GE
= 15 V,
Figure 19
V
CC
= 390 V, I
C
= 5 A
R
G
= 10 Ω , V
GE
= 15 V,
T
J
= 125°C
Figure 19
V cc
= 390 V, I
C
= 5 A,
R
G
= 10 Ω , V
GE
= 15 V,
Figure 19
V cc
= 390 V, I
C
= 5 A,
R
G
= 10 Ω , V
GE
= 15 V,
T
J
= 125°C
Figure 19
Min.
Typ.
Max. Unit
-
19
4
1330
ns ns
A/µs
-
-
-
18
4.5
1000
100
160
205
165
250
310
-
-
ns ns
A/µs ns ns ns ns ns ns
Table 7.
Switching energy (inductive load)
Symbol Parameter Test conditions Min.
Typ.
Max.
Unit
E on
(1)
E off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
R
G
= 480 V, I
C
= 10 Ω , V
GE
Figure 17
= 5 A
= 15 V, -
60
340
400
-
Eon
E off
(2)
E
(1) ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 480 V, I
C
= 5 A
R
G
= 10
Ω
, V
GE
= 15 V,
T
J
= 125°C
Figure 17
-
90
540
630
-
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17
. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature.
2.
Turn-off losses included also include also the tail of the collector current.
µJ
µJ
µJ
µJ
µJ
µJ
Table 8.
Symbol
V
F t rr
Q rr
I rrm t rr
Q rr
I rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
=5 A
I
F
=5 A, T
J
=125 °C
I
F
=5 A, V
R
=40 V, di/dt=100 A/µs
Figure 20
I
F
=5 A, V
R
=40 V,
T
J
=125 °C, di/dt=100 A/µs
Figure 20
Min.
Typ.
Max.
Unit
2.45
-
-
-
2
1.65
22
14
1.3
34
35
2.1
V
V ns nC
A ns nC
A
Doc ID 15847 Rev 2 5/16
Electrical characteristics STGD10NC60SD, STGF10NC60SD
2.1 Electrical characteristics (curves)
Figure 2.
Output characteristics Figure 3.
Transfer characteristics
V
GE
= 11 V
AM07262v1
V
CE
= 10 V
AM0726 3 v1
I
C
3 0
25
V
GE
= 15 V
20
15
10
5
0
0 2
V
GE
= 10 V
V
GE
= 9 V
V
GE
= 8 V
6
V
GE
= 7 V
8 V
CE
10
I
C
3 0
25
20
15
10
5
0
0
Figure 4.
Collector-emitter on voltage vs collector current
AM07264v1 V
CE(
3 t)
(V)
T
J
= 150 ºC
2.5
T
J
= 25 ºC
Figure 5.
Collector-emitter on voltage vs temperature
AM0 8 265v1
V
CE(
2 t)
(V) I
C
= 10 A
1.
8
V
GE
= 15 V
1.6
2
T
J
= -50 ºC
1.5
1.4
I
C
= 5 A
V
GE
= 15 V
1 1.2
I
C
= 2.5 A
0.5
0 4 8 12 16
I
C
1
-50 0 50 100
T
J
(ºC)
Figure 6.
Normalized breakdown voltage vs temperature
AM07266v1 1.15
(norm)
Figure 7.
Normalized gate threshold vs temperature
V
GE(th)
(norm)
AM07267V1
1.1
1.1
I
C
= 1 mA
1
1.05
0.9
1
0.
8
0.95
0.7
V
I
C
GE
= V
CE
= 250 µ A
0.9
-50 0
4
50 100
T
J
0.6
-50
2
0
4 6
50
8 10 V
GE
100
T
J
(°C)
6/16 Doc ID 15847 Rev 2
STGD10NC60SD, STGF10NC60SD Electrical characteristics
Figure 8.
Capacitance variations
C (pF) f = 1 MHz
V
GE
= 0
600
AM07269v1
Figure 9.
Gate charge vs gate-emitter voltage
AM0726 8 v1
V
GE
16
V
CC
= 4 8 0 V
I
C
= 5 A
12
C ie s
400
8
200
0
0
C re s
10
C oe s
20 3 0 40
V
CE
Figure 10.
Switching losses vs temperature
AM07270v1
4
0
0 4 8 12 16
Q
G
(nC)
Figure 11.
Switching losses vs gate resistance
AM07271v1
500
400
3 00
200
100
E
OFF
E
ON
V
CC
I
C
= 4 8 0 V, V
= 5 A, R
G
GE
= 15 V
=10 Ω
0
25 50 75 100
T
J
(°C)
Figure 12.
Switching losses vs collector current
AM07272v1
E ( µ J)
V
CC
R
G
= 4 8 0 V, V
GE
=10 Ω , T
J
= 15 V
= 125 °C
500
E
OFF
400
3 00
200
100
E
ON
0
1 2 3 4
I
C
(A)
500
400
3 00
200
E
OFF
V
CC
I
C
= 4 8 0 V, V
GE
= 5 A, T
J
= 15 V
= 125 ° C
E
ON
100
0
0 40 8 0 120 160 200
R
G
(
Ω
)
Figure 13.
Diode forward on voltage
)
&-
!
MAXIMUMVALUES
4 #
MAXIMUMVALUES
TYPICALVALUES
6
&-
6
Doc ID 15847 Rev 2 7/16
Electrical characteristics
Figure 14. Thermal impedance for DPAK
+
K
STGD10NC60SD, STGF10NC60SD
Figure 15. Thermal impedance for TO-220FP
+
K
3INGLEPULSE
?
YM
K "
" P 7
YM/ªH
Y
U
[
Y
U
[
T
P
S
Figure 16.
Turn-off SOA
I
C
(A)
10
1
AM0727 3 V1
0.1
0.01
0.1
1 10 100 V
CE
(V)
3INGLEPULSE
?
YM
" P 7
YM/ªH
K " Y
U
[
Y
U
[
T
P
S
8/16 Doc ID 15847 Rev 2
STGD10NC60SD, STGF10NC60SD
3 Test circuits
Figure 17.
Test circuit for inductive load switching
Figure 18.
Gate charge test circuit
Test circuits
Figure 19. Switching waveforms Figure 20.
Diode recovery time waveform
Doc ID 15847 Rev 2 9/16
Package mechanical data
4 Package mechanical data
STGD10NC60SD, STGF10NC60SD
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/16 Doc ID 15847 Rev 2
STGD10NC60SD, STGF10NC60SD
DIM.
H
L
L1
E
E1 e e1
L2
L4
R
V2 c c2
D
D1
A
A1
A2 b b 4 min.
2.20
0.
9 0
0.0
3
0.64
5.20
0.45
0.4
8
6.00
6.40
TO-252 (DPAK) mechanical data
mm.
typ
5.10
4.70
2.2
8
4.40
9 .
3 5
1
0.60
0 o
2.
8 0
0.
8 0
0.20
Package mechanical data max.
2.40
1.10
0.2
3
0.
9 0
5.40
0.60
0.60
6.20
6.60
4.60
10.10
1
8 o
Doc ID 15847 Rev 2
006 8 772_G
11/16
Package mechanical data
L5
L6
L7
Dia
G1
H
L2
L3
L4
F
F1
F2
G
D
E
A
B
Table 9.
Dim.
TO-220FP mechanical data
Min.
0.75
1.15
1.15
4.95
4.4
2.5
2.5
0.45
2.4
10
28.6
9.8
2.9
15.9
9
3 mm
Typ.
16
STGD10NC60SD, STGF10NC60SD
Max.
1
1.70
1.70
5.2
4.6
2.7
2.75
0.7
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
12/16 Doc ID 15847 Rev 2
STGD10NC60SD, STGF10NC60SD
Figure 21.
TO-220FP drawing
Package mechanical data
L7
E
A
B
H
Di a
L6
L2
L 3
L5
D
F1 F2
F
G1
G
L4
7012510_Rev_K
Doc ID 15847 Rev 2 13/16
Packaging mechanical data
5 Packaging mechanical data
STGD10NC60SD, STGF10NC60SD
DPAK FOOTPRINT
14/16
All dimensions are in millimeters
TAPE MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
D1
E
F
K0
A0
B0
B1
D
P0
P1
6.8
7 0.267 0.275
10.4
10.6
0.409 0.417
1.5
1.5
12.1
1.6
0.476
0.059 0.063
0.059
1.65
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
3.9
7.9
4.1
8.1
0.153 0.161
0.311
0.319
P2
R
W
1.9
40
2.1
0.075 0.082
1.574
15.7
16.3
0.618
0.641
TAPE AND REEL SHIPMENT
G
N
T
C
D
A
B
REEL MECHANICAL DATA
DIM.
mm inch
MIN.
MAX.
MIN.
MAX.
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0.795
16.4
18.4
0.645
0.724
50 1.968
22.4
0.881
BASE QTY
2500
BULK QTY
2500
Doc ID 15847 Rev 2
STGD10NC60SD, STGF10NC60SD Revision history
Table 10.
Document revision history
Date Revision
06-Jul-2009
14-Jun-2010
1
2
Changes
Initial release
Inserted
Section 2.1: Electrical characteristics (curves)
.
Doc ID 15847 Rev 2 15/16
STGD10NC60SD, STGF10NC60SD
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16/16 Doc ID 15847 Rev 2
