STGF20NB60S
PowerMESH™ IGBT, S series
600 V, 13 A low drop
Datasheet - production data
Features
Low on-voltage drop (V
CE(sat)
)
High current capability
Applications
Light dimmer
Static relays
Motor control
1
2
3
TO-220FP
Figure 1: Internal schematic diagram
Order code
STGF20NB60S
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the
Po werMESH™ IGBTs, with outstanding performance. The suffix “S” represents a series optimized to achieve minimum on-voltage drop for low frequency applications.
Table 1: Device summary
Marking
GF20NB60S
Package
TO-220FP
Packing
Tube
December 2015 DocID9910 Rev 4
This is information on a product in full production.
1/14 www.st.com
Contents
Contents
STGF20NB60S
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1
TO-220FP package information ...................................................... 11
5 Revision history ............................................................................ 13
2/14 DocID9910 Rev 4
STGF20NB60S
1 Electrical ratings
Symbol
V
CES
V
ECS
V
GE
I
C
I CL
I
CM
(1)
P
TOT
V
ISO
T
STG
T
J
Table 2: Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Emitter-collector voltage (V
GE
= 0 V)
Gate-emitter voltage
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Turn-off latching current
Pulsed collector current
Total dissipation at T
C
= 25 °C
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, T
C
= 25 °C)
Storage temperature range
Operating junction temperature
Notes:
(1)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Electrical ratings
Value
600
-20
±20
24
13
70
70
40
2.5
-55 to 150
Value
3.1
62.5
Unit
V
V
V
A
A
A
W kV
°C
Unit
°C/W
DocID9910 Rev 4 3/14
Electrical characteristics
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 4: Static characteristics
Test conditions
V
(BR)CES
V
(BR)ECS
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
V
GE
= 0 V, I
C
= 250 µA
V
GE
= 0 V, I
C
= 10 mA
I
I
CES
GES
V
GE
= 0 V, V
CE
= 600 V
Collector cut-off current
V
GE
= 0 V, V
CE
= 600 V,
T
C
= 125 °C
Gate-emitter leakage current
V
CE
= 0 V, V
GE
= ±20 V
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 250 µA
V
CE(sat)
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 20 A
V
GE
= 15 V, I
C
= 20 A,
T
J
= 150 °C
Symbol Parameter
Table 5: Dynamic characteristics
Test conditions g
fs
(1)
Forward transconductance V
CE
= 10 V, I
C
= 8 A
C ies
C oes
C res
Input capacitance
Output capacitance
Reverse transfer capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
Q g
Q ge
Total gate charge
Gate-emitter charge
V
CC
= 480 V, I
C
= 20 A,
V
GE
= 15 V (see Figure 17:
"Gate charge test circuit" )
Q gc
Gate-collector charge
STGF20NB60S
Min. Typ. Max. Unit
600
V
-20
10
µA
100
2.5
±100 nA
5
1.25 1.7
V
V
1.2
Min. Typ. Max. Unit
-
-
-
20
1820
167
-
-
-
S pF
- 27 -
-
-
-
83 115
10 -
27 - nC
Notes:
(1) Pulse duration= 300 μs, duty cycle 1.5 %
Symbol
Table 6: Inductive load switching on characteristics
Parameter Test conditions Min. Typ. Max. Unit t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope
V
CC
= 480 V, I
C
= 20 A,
V
GE
= 15 V, R
G
= 100 Ω
(see Figure 16: "Test circuit for inductive load switching" )
V
CC
= 480 V, I
C
= 20 A,
V
GE
= 15 V, R
G
= 100 Ω,
T j
= 125 °C (see Figure 16:
"Test circuit for inductive load switching" )
-
-
-
-
-
-
92
70
340
80
73
320
-
-
-
-
-
- A/µs ns ns
A/µs ns ns
4/14 DocID9910 Rev 4
STGF20NB60S
Symbol
Electrical characteristics
Table 7: Inductive load switching off characteristics
Parameter Test conditions Min. Typ. Max. Unit t c
Cross-over time t r
(V off
) Off voltage rise time t d(off)
Turn-off delay time t f t c
Current fall time
Cross-over time t r
(V off
) Off voltage rise time t d(off)
Turn-off delay time t f
Current fall time
V
CC
= 480 V, I
C
= 20 A,
V
GE
= 15 V, R
G
= 100 Ω
(see Figure 16: "Test circuit for inductive load switching" )
V
CC
= 480 V, I
C
= 20 A,
V
GE
= 15 V, R
G
= 100 Ω,
T j
= 125 °C (see Figure 16:
"Test circuit for inductive load switching" )
-
-
-
-
-
-
-
-
1.6
0.8
1.1
0.8
2.4
1.1
2.4
1.2
-
-
-
-
-
-
-
- ns ns
Symbol
E
on
(1)
Turn-on switching loss
E
off
(2)
Turn-off switching loss
E
E ts
on
E
off
E
(1)
(2)
ts
Table 8: Inductive load switching loss characteristics
Parameter
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
V
V
CC
GE
Test conditions
= 480 V, I
= 15 V, R
C
G
= 20 A,
= 100 Ω
(see Figure 18: "Switching waveform" )
V
CC
= 480 V, I
C
= 20 A,
V
GE
= 15 V, R
G
= 100
Ω,
T j
= 125 °C (see Figure 18:
"Switching waveform" )
Min.
-
-
-
-
-
-
Typ.
0.84
7.4
8.24
0.86
11.5
12.36
Max. Unit
-
-
-
-
-
- mJ mJ
Notes:
(1)
E on
is the turn-on loss when a external diode is used in the test circuit in Figure 16: "Test circuit for inductive load switching" .
(2)
Turn-off loss includes the tail of the collector current.
DocID9910 Rev 4 5/14
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Output Characteristics
STGF20NB60S
Figure 3: Transfer Characteristics
Figure 4: Transconductance
Figure 5: Normalized collector-emitter on voltage vs temperature
Figure 6: Collector-Emitter on voltage vs collector current
Figure 7: Normalized gate threshold vs temperature
6/14 DocID9910 Rev 4
STGF20NB60S
Figure 8: Normalized breakdown voltage vs temperature
Electrical characteristics
Figure 9: Gate charge vs gate-emitter voltage
Figure 10: Capacitance variations Figure 11: Switching loss vs gate resistance
Figure 12: Switching loss vs temperature Figure 13: Switching loss vs collector current
DocID9910 Rev 4 7/14
Electrical characteristics
Figure 14: Thermal impedance
STGF20NB60S
Figure 15: Turn-off SOA
8/14 DocID9910 Rev 4
STGF20NB60S
3
Test circuits
Test circuits
Figure 16: Test circuit for inductive load switching
G
C
A
E
B
A
L=100 µF
B
G
C
D.U.T
E
3.3
µF
+ R
G
-
1000
µF
V
CC
AM01504v 1
Figure 17: Gate charge test circuit
12 V 47 kΩ
100 nF
1 kΩ
V
CC
P
W
V i
≤ V
GMAX
2200
µF
I
G
=CONST
2.7 kΩ
47 kΩ
1 kΩ
100 Ω D.U.T.
V
G
AM01505v1
Figure 18: Switching waveform
DocID9910 Rev 4 9/14
Package information
4 Package information
STGF20NB60S
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
10/14 DocID9910 Rev 4
STGF20NB60S
4.1 TO-220FP package information
Figure 19: TO-220FP package outline
Package information
DocID9910 Rev 4
7012510_Rev_K_B
11/14
Package information
Dim.
G1
H
L2
L3
L4
L5
L6
L7
Dia
F
F1
F2
G
A
B
D
E
Table 9: TO-220FP package mechanical data mm
Min. Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
STGF20NB60S
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
12/14 DocID9910 Rev 4
STGF20NB60S
5
Revision history
Revision history
Date Revision
Table 10: Document revision history
Changes
17-Dec-2004
05-Aug-2005
02-Dec-2015
2
3
4
New template, no content change
Some values changed in table 6
Text and formatting changes throughout document
On cover page:
- updated Title, Features and Description
Added Electrical ratings section heading
In section Electrical ratings:
- updated tables Absolute Maximum ratings and Thermal Data
In section Electrical characteristics:
- updated table Static characteristics
Added section Package information
Updated TO-220FP package information
DocID9910 Rev 4 13/14
STGF20NB60S
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© 2015 STMicroelectronics
– All rights reserved
14/14 DocID9910 Rev 4
