STD70NS04ZL
N-channel clamped 9.5 m
Ω
, 70 A DPAK fully protected SAFeFET™ Power MOSFET
Features
Type V
DSS
R
DS(on) max
I
D
■
■
■
STD70NS04ZL Clamped < 10.5 m Ω 70 A
Low capacitance and gate charge
100% avalanche tested
175 °C maximum junction temperature
Applications
■ Switching applications
– ABS, solenoid drivers
– Motor control
– DC-DC converters
Description
This fully clamped Power MOSFET is produced by using the latest advanced company’s Mesh
OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
1
3
DPAK
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order codes
STD70NS04ZL
Marking
70NS04ZL
Package
DPAK
Packaging
Tape and reel
October 2009 Doc ID 16344 Rev 1 1/13 www.st.com
13
5
6
3
4
1
2
Contents
Contents
STD70NS04ZL
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 16344 Rev 1
STD70NS04ZL Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
DG
V
GS
I
D
I
D
I
DG
I
GS
I
DM
(2)
P
TOT
Drain-source voltage (V drain-gate voltage
Gate-source voltage
GS
= 0)
Drain current (continuous) at T
Drain current (continuous) at T
Drain gate current (continuous)
C
C
= 25 °C
=100 °C
Gate-source current (continuous)
Drain current (pulsed)
V
ESD(G-S)
V
ESD(G-D)
V
ESD(D-S)
T
J
T stg
Total dissipation at T
C
= 25 °C
Derating factor
Gate-source ESD (HBM-C=100 pF, R=1.5 k
Gate-drain ESD (HBM-C=100 pF, R=1.5 k Ω )
Storage temperature
Ω )
Drain-source ESD (HBM-C=100 pF, R=1.5 k
Ω
)
Operating junction temperature
1.
Voltage is limited by zener diodes
2.
Pulse width limited by safe operating area
Table 3.
Symbol
Thermal data
Parameter
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case max
Thermal resistance junction-pcb max
1.
When mounted on 1 inch² 2 oz. FR4 Cu.
Table 4.
Symbol
Avalanche data
Parameter
I
AS
E
AS
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy (starting
Tj=25 °C, I
D
=I
AS
, V
DD
=21 V)
(see Figure 17, Figure 18)
280
110
0.73
± 8
± 8
± 8
Value
33
(1)
33
(1)
±20
(1)
70
50
± 50
± 50
-55 to 175
Unit
A
W
W/°C kV kV kV
A
A mA mA
V
V
V
°C
Value
1.36
50
Value
30
650
Unit
°C/W
°C/W
Unit
A mJ
Doc ID 16344 Rev 1 3/13
Electrical characteristics STD70NS04ZL
(T
CASE
=25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter Test conditions Min.
Typ.
Max.
Unit
V
(BR)DG
Clamped voltage
I
D
= 1 mA, V
GS
= 0
-40 < Tj < 175 °C
33 41 V
V
DSR(CL)
Drain-source clamping voltage (DC)
I
GD(CL)
= -2 mA, I
D
= 1 A 40 V
I
I
DSS
GSS
(1)
Zero gate voltage drain current (V
GS current (V
DS
= 0)
= 0)
Gate-body leakage
V
DS
= 16 V
V
DS
= 16 V, T j
= 150 °C
V
DS
= 16 V, T j
= 175 °C
V
GS
= ±10 V
V
GS
= ±10 V,T j
= 175 °C
V
GS
= ±15 V,T j
= 175 °C
1
50
100
2
50
150
µA
µA
µA
µA
µA
µA
V
GSS
Gate-source breakdown voltage
I
GS
= ±100 µA 15 V
V
GS(th)
R
DS(on)
Gate threshold voltage
Static drain-source on resistance
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 5 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A
1 3 V
9.5
12.5
m Ω
7.5
10.5
1.
Gate Oxide, without zener diodes, tested at wafer sorting (I
Figure 17
)
for electrical schematics
GSS
< ± 100nA @ ± 20V Tj=25°) (see m
Ω
Table 6.
Dynamic
Symbol g fs
C
C
C
(1) iss oss rss
Parameter Test conditions
Forward transconductance V
DS
=15 V, I
D
= 30 A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25 V, f=1 MHz, V
GS
=0 t r(Voff) t f t c
Off voltage rise time
Fall time
Cross-over time
V
CLAMP
= 32 V, I
D
V
GS
=10 V, R
G
=60 A,
=4.7 Ω
(see Figure 16)
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
V
GS
=32 V, I
D
=5 V
= 60 A
(see Figure 15)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Min.
Typ.
Max.
Unit
50 S
-
-
-
1800
625
220
70
95
185
32
12
17
-
-
pF pF pF ns ns ns nC nC nC
4/13 Doc ID 16344 Rev 1
STD70NS04ZL Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
I
SD
SDM
(1)
Source-drain current
Source-drain current
(pulsed)
V
SD
(2) t rr
Q rr
I
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
SD
SD
V
=60 A, di/dt = 100 A/µs,
DD
= 25 V, Tj=150 °C
(see Figure 16)
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
=60 A, V
GS
=0
Min.
Typ.
Max.
Unit
-
-
-
40
40
2.3
70
280
1.5
A
A
V ns nC
A
Doc ID 16344 Rev 1 5/13
Electrical characteristics STD70NS04ZL
Figure 2.
Safe operating area
I
D
(A)
AM054 8 0v1
Figure 3.
Thermal impedance
100
10
1
0.1
a tion in thi s a re a
i s
D
S
(on) a x R
Oper
Limited
Tj=175°C
Tc=25°C
S inlge p u l s e
1 10
100 µs
1m s
10m s
Figure 4.
Output characteristics
I
D
(A)
V
G S
=10V
250
V
D S
(V)
AM054 8 1v1
Figure 5.
Transfer characteristics
I
D
(A)
V
D S
=10 V
250
AM054 8 2v1
200 200
6V
150
100
5V
150
100
50
4V
50
0
0 1 2 3 4 V
D S
(V)
0
0 2 4 6 8 V
G S
(V)
Figure 6.
Normalized B
VDSS
vs temperature Figure 7.
Static drain-source on resistance
AM054 83 v1 AM054 8 4v1
BV
D SS
(norm)
R
D S (on)
(m
Ω
)
1.05
10.5
V
G S
=5V
1.00
9.5
T
C
=25°C
0.95
8 .5
I
D
= 1 mA
0.90
0.
8 5
-75 -25 25 75 125 T
J
(°C)
7.5
6.5
0 10 20 3 0 40
V
G S
=10V
50 60 I
D
(A)
6/13 Doc ID 16344 Rev 1
STD70NS04ZL Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM054 8 5v1
V
G S
(V)
C
(pF)
V
DD
= 3 2V
3 500
10
I
D
=60A
3 000
8
2500
6
4
2000
1500
1000
2
0
0 10 20 3 0 40 50 Q g
(nC)
500
0
0 5 10 15 20
AM054 8 6v1
Ci ss
Co ss
25 3 0
Cr ss
V
D S
(V)
Figure 10. Normalized gate threshold voltage vs temperature
AM054 8 7v1
V
G S (th)
(norm)
1.15
Figure 11. Normalized on resistance vs temperature
AM054 88 v1
R
D S (on)
(norm)
1.
8
1.6
1.05
1.4
0.95
1.2
0.
8 5
1.0
0.75
0.
8
0.65
0.6
0.55
-50 -25 0 25 50 75 100125 150 T
J
(°C)
0.4
-50 -25 0 25 50 75 100 125150 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
V
S D
(V)
T
J
=-55°C
1.0
AM054 8 9v1
0.9
T
J
=25°C
0.
8
0.7
0.6
0.5
0.4
0
T
J
=175°C
10 20 3 0 40 50 60 I
S D
(A)
Doc ID 16344 Rev 1 7/13
Test circuits
3 Test circuits
STD70NS04ZL
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
µ
F
3 .
3
µ
F
V
DD
V i
=20V=V
GMAX
2200
µ F
I
G
=CON S T
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 µ H
3 .
3
µ F
1000
µ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
µ F
3 .
3
µ F
V
DD
P w
AM01470v1
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
V
D
V
(BR)D SS t on td on t r t off td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
8/13 Doc ID 16344 Rev 1
STD70NS04ZL
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 16344 Rev 1 9/13
Package mechanical data
DIM.
H
L
L1
L2
E
E1 e e1 b 4 c c2
D
D1
A
A1
A2 b
L4
R
V2 min.
2.20
0.
9 0
0.0
3
0.64
5.20
0.45
0.4
8
6.00
6.40
TO-252 (DPAK) mechanical data
mm.
typ
5.10
4.70
2.2
8
4.40
9 .
3 5
1
0.60
0 o
2.
8 0
0.
8 0
0.20
STD70NS04ZL max.
2.40
1.10
0.2
3
0.
9 0
5.40
0.60
0.60
6.20
6.60
4.60
10.10
1
8 o
006 8 772_G
10/13 Doc ID 16344 Rev 1
STD70NS04ZL
5 Packaging mechanical data
DPAK FOOTPRINT
Packaging mechanical data
All dimensions are in millimeters
TAPE MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
A0 6.8
7 0.267 0.275
P0
P1
P2
R
W
B0
B1
D
D1
E
F
K0
10.4
10.6
0.409 0.417
12.1
0.476
1.5
1.5
1.6
0.059 0.063
0.059
1.65
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
3.9
7.9
1.9
4.1
8.1
2.1
0.153 0.161
0.311
0.319
0.075 0.082
40 1.574
15.7
16.3
0.618
0.641
TAPE AND REEL SHIPMENT
G
N
T
C
D
REEL MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
A
B 1.5
330
0.059
12.992
12.8
13.2
0.504
0.520
20.2
0.795
16.4
18.4
0.645
0.724
50 1.968
22.4
0.881
BASE QTY
2500
BULK QTY
2500
Doc ID 16344 Rev 1 11/13
Revision history
Table 8.
Date
Document revision history
Revision
01-Oct-2009 1 First release
Changes
STD70NS04ZL
12/13 Doc ID 16344 Rev 1
STD70NS04ZL
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Doc ID 16344 Rev 1 13/13
