STGF19NC60WD
N-channel 600V - 7A - TO-220
Ultra fast PowerMESH™ IGBT
PRELIMINARY DATA
Features
Type V
CES
STGF19NC60WD 600V
V
CE(sat)
(max)@25°C
< 2.5V
I
C
@100°C
7A
■
■
■
High frequency operation
Low C
RES
/ C
IES susceptibility)
ratio (no cross-conduction
Very soft ultra fast recovery antiparallel diode
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application.
Applications
■
■
High frequency motor controls, inverters, UPS
HF, SMPS and PFC in both hard switch and resonant topologies
1
2
3
TO-220FP
Internal schematic diagram
Order code
Part number
STGF19NC60WD
Marking
GF19NC60WD
Package
TO-220
Packaging
Tube
May 2007 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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3
4
5
1
2
Contents
Contents
STGF19NC60WD
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STGF19NC60WD Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
CES
I
C
(1)
I
C
(1)
I
CL
(2)
I
F
V
GE
P
TOT
T stg
T j
Collector-emitter voltage (V
Collector current (pulsed)
Gate-emitter voltage
Total dissipation at T
Storage temperature
C
GS
= 25°C
= 0)
Collector current (continuous) at T
Collector current (continuous) at T
Diode RMS forward current at T
Operating junction temperature
C
C
C
= 25°C
= 100°C
= 25°C
1.
Calculated according to the iterative formula:
I
C
( T
C
) =
R
THJ – C
×
T – T
C
V
CESAT MAX ) ( T
C
, I
C
)
2.
Vclamp=480V, Tj=150°C, R
G
=10
Ω
, V
GE
=15V
– 55 to 150
Value
600
14
7
35
12
±20
32
Table 2.
Symbol
Thermal resistance
Parameter
Rthj-case Thermal resistance junction-case max
Value
4
62.5
Unit
°C/W
°C/W
A
A
A
V
W
Unit
V
A
°C
3/14
Electrical characteristics STGF19NC60WD
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
Static
Parameter Test conditions
V
BR(CES)
Collector-emitter breakdown voltage
V
V
I
CE(sat)
I
GE(th)
CES
GES g fs
I
C
= 1mA, V
GE
= 0
Collector-emitter saturation voltage
V
GE
= 15V, I
C
= 12A
V
GE
= 15V, I
C
=12A,Tc=125°C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= Max rating,T
C
= 25°C
V
CE
= Max rating,T
C
= 125°C
Gate-emitter leakage current (V
CE
= 0)
V
GE
= ±20V, V
CE
= 0
Forward transconductance V
CE
= 15V
,
I
C
= 12A
Min.
Typ.
Max.
Unit
600
3.75
2.1
1.8
10
2.5
5.75
150
1
V
V
V
V
µA mA
±100 nA
S
Table 4.
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
V
CE
= 25V, f = 1MHz,
V
GE
= 0
V
CE
= 390V, I
C
= 5A,
V
GE
= 15V,
Figure 16
Min.
Typ.
Max.
Unit
1180
130
26 pF pF pF
53
10
21 nC nC nC
4/14
STGF19NC60WD Electrical characteristics
Table 5.
Symbol
Switching on/off (inductive load)
Parameter Test conditions t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope t r
(V off
) t d
( off
) t f t r
(V off
) t d
( off
) t f
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390V, I
C
= 12A
R
G
= 10 Ω , V
GE
= 15V,
Figure 17
V
CC
= 390V, I
C
= 12A
R
G
= 10 Ω , V
GE
= 15V,
Tj = 125°C
Figure 17
V
CC
= 390V, I
C
= 12A
R
G
= 10
Ω
, V
GE
= 15V,
Figure 17
V
CC
= 390V, I
C
= 12A
R
G
= 10 Ω , V
GE
= 15V,
Tj = 125°C
Figure 17
Min.
Typ.
Max.
Unit
25
7
1600 ns ns
A/µs
25
8
1400
22
90
43
47
127
77 ns ns ns ns ns
A/µs ns ns ns
Table 6.
Symbol
Switching energy (inductive load)
Parameter Test conditions Min.
Typ.
Max.
Unit
E on
(1)
E off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
R
G
= 390V, I
C
Figure 17
= 12A
= 10 Ω , V
GE
= 15V,
81
125
206
E on
(1)
E off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390V, I
C
= 12A
R
G
= 10 Ω , V
GE
= 15V,
Tj = 125°C
Figure 17
161
255
416
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 15
If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
µJ
µJ
µJ
µJ
µJ
µJ
5/14
Electrical characteristics STGF19NC60WD
Table 7.
Symbol
V f t rr
Q rr
I rrm t rr
Q rr
I rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I f
= 12A
I f
= 12A, Tj = 125°C
I f
= 12A,V
R
= 50V,
Tj = 25°C, di/dt = 100 A/ µ s
Figure 18
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I f
= 12A,V
R
= 50V,
Tj =125°C, di/dt = 100A/ µ s
Figure 18
Min.
Typ.
Max.
Unit
1.9
1.5
2.5
V
V
31
30
2 ns nC
A
59
102
4 ns nC
A
6/14
STGF19NC60WD
Figure 1.
Output characteristics
Electrical characteristics
Figure 2.
Transfer characteristics
Figure 3.
Transconductance Figure 4.
Collector-emitter on voltage vs temperature
Figure 5.
Gate charge vs gate-source voltage Figure 6.
Capacitance variations
7/14
Electrical characteristics STGF19NC60WD
Figure 7.
Normalized gate threshold voltage vs temperature
Figure 8.
Collector-emitter on voltage vs collector current
Figure 9.
Normalized breakdown voltage vs temperature
Figure 10.
Switching losses vs temperature
Figure 11.
Switching losses vs gate resistance Figure 12.
Switching losses vs collector current
8/14
STGF19NC60WD
Figure 13.
Turn-off SOA
Electrical characteristics
Figure 14.
Emitter-collector diode characteristics
9/14
Test circuit
3 Test circuit
Figure 15. Test circuit for inductive load switching
STGF19NC60WD
Figure 16. Gate charge test circuit
Figure 17. Switching waveform Figure 18. Diode recovery time waveform
10/14
STGF19NC60WD
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/14
Package mechanical data STGF19NC60WD
DIM.
G1
H
L2
L3
F1
F2
G
A
E
F
B
D
L4
L5
L6
L7
Ø
1.15
1.15
4.95
2.4
10
MIN.
4.4
2.5
2.5
0.45
0.75
28.6
9.8
2.9
15.9
9
3
TO-220FP MECHANICAL DATA mm.
TYP
16
1.7
1.7
5.2
2.7
10.4
MAX.
4.6
2.7
2.75
0.7
1
30.6
10.6
3.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
L6
L7
L3
L2
L5
L4
1 2 3
12/14
STGF19NC60WD
Table 8.
Date
13-Oct-2006
08-May-2007
Revision history
Revision
1
2
Changes
Initial release.
Corrected value on Table 1
,
Table 2
Revision history
13/14
STGF19NC60WD
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