STGW39NC60VD
40 A - 600 V - very fast IGBT
Features
■
■
Low C
RES
/ C
IES
ratio (no cross conduction susceptibility)
IGBT co-packaged with ultra fast free-wheeling diode
Applications
■
■
■
■
High frequency inverters
UPS
Motor drivers
Induction heating
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
TO-247
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
STGW39NC60VD
Marking
GW39NC60VD
Package
TO-247
Packaging
Tube
July 2008 Rev 8 1/15 www.st.com
15
3
4
5
1
2
Contents
Contents
STGW39NC60VD
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2
Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/15
STGW39NC60VD Electrical ratings
Table 2.
Absolute maximum ratings
Symbol Parameter
V
CES
I
C
(1)
I
C
(1)
I
CL
(2)
I
CP
(3)
V
GE
I
F
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at 25 °C
Collector current (continuous) at 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
I
FSM
Diode RMS forward current at T
C
= 25 °C
Surge non repetitive forward current
(tp=10 ms sinusoidal)
P
TOT
T j
Total dissipation at T
C
= 25 °C
Operating junction temperature
1.
Calculated according to the iterative formula:
I
C
(
T
C
) =
R
THJ
–
C
×
T
JMAX
V
–
T
(
C
)
( T
C
,
I
C
)
2.
Vclamp = 80%(V
CES
) , Tj = 150 °C, R
G
= 10
Ω
, V
GE
= 15 V
3.
Pulse width limited by max. junction temperature allowed
Table 3.
Thermal resistance
Symbol Parameter
R thj-case
R thj-case
R thj-amb
Thermal resistance junction-case (IGBT) max
Thermal resistance junction-case (diode) max
Thermal resistance junction-ambient max
Value
600
80
40
220
220
± 20
30
120
250
– 55 to 150
Value
0.5
1.5
50
Unit
°C/W
°C/W
°C/W
Unit
V
A
A
A
A
V
A
A
W
°C
3/15
Electrical characteristics STGW39NC60VD
(T
CASE
=25 °C unless otherwise specified)
Table 4.
Static
Symbol Parameter Test conditions
V
(BR)CES
Collector-emitter breakdown voltage (V
GE
= 0)
I
C
= 1 mA
V
V
I
CE(sat)
I
GE(th)
CES
GES
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 30 A
V
GE
= 15 V, I
C
= 30 A,
T
C
=125 °C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
V
CE
= V
GE
, I
C
=1 mA
V
CE
= 600 V
V
CE
= 600 V, T
C
= 125 °C
Gate-emitter leakage current (V
CE
= 0)
V
GE
= ± 20 V g fs
(1)
Forward transconductance V
CE
= 15 V
,
I
C
= 30 A
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Dynamic
Symbol Parameter
C ies
C oes
C res
Input capacitance
Output capacitance
Reverse transfer capacitance
Q g
Q ge
Q gc
Total gate charge
Gate-emitter charge
Gate-collector charge
Min. Typ. Max. Unit
600 V
1.8
1.7
2.4
V
V
3.75
5.75
V
500
5
µA mA
20
±100 nA
S
Test conditions
V
CE
= 25 V, f = 1 MHz, V
GE
= 0
Min. Typ. Max. Unit
2900
298
59 pF pF pF
V
CE
= 390 V, I
C
= 30 A,
V
GE
= 15 V
(see Figure 19)
126
16
46 nC nC nC
4/15
STGW39NC60VD Electrical characteristics
Table 6.
Switching on/off (inductive load)
Symbol Parameter Test conditions t d(on) t r
(di/dt) onf
Turn-on delay time
Current rise time
Turn-on current slope t d(on) t r
(di/dt) on
Turn-on delay time
Current rise time
Turn-on current slope t r(Voff) t d(off) t f t r(Voff) t d(off) t f
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
V
CC
= 390 V, I
C
= 30 A,
R
G
=10
Ω,
V
GE
= 15 V
(see Figure 18)
V
CC
= 390 V, I
C
= 30 A,
R
G
=10
Ω,
V
GE
=15 V
T
C
=125 °C
(see Figure 18)
V
CC
= 390 V, I
C
= 30 A,
R
G
=10
Ω,
V
GE
=15 V
(see Figure 18)
V
CC
= 390 V, I
C
= 30 A,
R
G
=10
Ω,
V
GE
=15 V
T
C
=125 °C
(see Figure 18)
Min.
Typ.
Max.
Unit
33
13
2500 ns ns
A/µs
32
14
2280
33
178
65
68
238
128 ns ns
A/µs ns ns ns ns ns ns
Table 7.
Switching energy (inductive load)
Symbol Parameter Test conditions
E
E on
(1) off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390 V, I
C
= 30 A
R
G
= 10
Ω
, V
GE
= 15 V,
(see Figure 20)
E
E on
(1) off
(2)
E ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390 V, I
C
= 30 A
R
G
= 10
Ω
, V
GE
= 15 V,
T
C
= 125 °C
(see Figure 20)
Min. Typ.
Max. Unit
333
537
870
618
1125
1743
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
µJ
µJ
µJ
µJ
µJ
µJ
5/15
Electrical characteristics STGW39NC60VD
Table 8.
Symbol
Collector-emitter diode
Parameter
V
F t rr
Q rr
I rrm t rr
Q rr
I rrm
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
= 30 A
I
F
= 30 A, T
C
= 125 °C
I
F
= 30 A, V
R
= 50 V, di/dt =100 A/µs
(see Figure 21)
I
F
= 30 A, V
R
= 50 V,
T
C
= 125 °C, di/dt =100 A/µs
(see Figure 21)
Min. Typ. Max.
Unit
2.4
1.8
V
V
45
56
2.55
ns nC
A
100
290
5.8
ns nC
A
6/15
STGW39NC60VD
Figure 2.
Output characteristics
Electrical characteristics
Figure 3.
Transfer characteristics
Figure 4.
Transconductance Figure 5.
Collector-emitter on voltage vs temperature
Figure 6.
Collector-emitter on voltage vs collector current
Figure 7.
Normalized gate threshold vs temperature
7/15
Electrical characteristics STGW39NC60VD
Figure 8.
Normalized breakdown voltage vs temperature
Figure 9.
Gate charge vs gate-emitter voltage
Figure 10. Capacitance variations Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current
8/15
STGW39NC60VD
Figure 14. Thermal impedance
Electrical characteristics
Figure 15. Turn-off SOA
Figure 16. Emitter-collector diode characteristics
70
60
50
40
30
20
10
0
0
IFM(A)
120
110
100
90
80
1 2 3
VFM(V)
4
Tj=25°C
(Maximum values)
5 6
Figure 17. I
C
vs. frequency
For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: f
MAX
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
● The maximum power dissipation is limited by maximum junction to case thermal resistance:
Equation 1
P
D
=
∆
T / R
THJ-C considering
∆
T = T
J
- T
C
= 125 °C - 75 °C = 50 °C
● The conduction losses are:
9/15
Electrical characteristics STGW39NC60VD
Equation 2
P
C
= I
C
* V
CE(SAT)
*
δ with 50% of duty cycle, V
CESAT
typical value @125 °C.
● Power dissipation during ON & OFF commutations is due to the switching frequency:
Equation 3
P
SW
= (E
ON
+ E
OFF conditions: V
CE
) * freq.Typical values @ 125 °C for switching losses are used (test
= 390 V, V
GE
= 15 V, R
G
= 10
Ω
). Furthermore, diode recovery energy is included in the E
ON
(see note 2), while the tail of the collector current is included in the E measurements (see note 3).
OFF
10/15
STGW39NC60VD
3 Test circuit
Figure 18. Test circuit for inductive load switching
Figure 19. Gate charge test circuit
Test circuit
Figure 20. Switching waveforms Figure 21. Diode recovery times waveform
11/15
Package mechanical data
4 Package mechanical data
STGW39NC60VD
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
12/15
STGW39NC60VD
Di m.
L2
øP
øR
S
L
L1
E e b1 b2 c
D
A
A1 b
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
TO-247 mechanical data
mm.
Typ
5.45
18.50
5.50
Package mechanical data
Max .
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14.80
4.30
3.65
5.50
13/15
Revision history STGW39NC60VD
Table 9.
Document revision history
Date
17-Nov-2005
05-May-2006
10-Jul-2006
01-Dec-2006
16-May-2007
22-Aug-2007
31-Jan-2008
29-Jul-2008
Revision
1
2
3
4
5
6
7
8
Changes
First release
Inserted curves
Modified value on Absolute maximum ratings
Modified value on
Dynamic
New curves updated:
Figure 5 and Figure 6
Added new
Figure 17
and new section
2.2: Frequency applications
Modified:
Table 8: Collector-emitter diode
Updated V
CE(sat)
on Table 4
14/15
STGW39NC60VD
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
15/15
