STT5N2VH5
N-channel 20 V, 0.025
Ω
typ., 5 A STripFET™ V Power MOSFET
in a SOT23-6L package
Datasheet — production data
6
5
4
1
2
3
SOT23-6L
Figure 1. Internal schematic diagram
Features
•
•
•
•
•
Order code V
DS
R
DS(on)
max I
D
P
TOT
STT5N2VH5 20 V 0.04
Ω
(V
GS
=2.5 V) 5 A 1.6 W
Very low profile package
Conduction losses reduced
Switching losses reduced
2.5 V gate drive
Very low threshold device
•
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’
STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
Order code
STT5N2VH5
Table 1. Device summary
Marking Packages
STD1 SOT23-6L
Packaging
Tape and reel
March 2014
This is information on a product in full production.
DocID026116 Rev 1 1/13 www.st.com
3
4
5
1
2
Contents
Contents
STT5N2VH5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 DocID026116 Rev 1
STT5N2VH5 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(1)(2)
P
TOT
(1)
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Storage temperature pcb pcb pcb
= 25 °C
= 25 °C
= 100 °C
Max. operating junction temperature
1.
This value is rated according to R thj-pcb
2.
Pulse width is limited by safe operating area
Symbol
Table 3. Thermal data
Parameter
R thj-pcb
(1)
Thermal resistance junction-pcb max
1.
When mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec.
Value
20
± 8
5
3.1
20
1.6
- 55 to 150
Unit
A
A
W
°C
°C
V
V
A
Value
78
Unit
°C/W
DocID026116 Rev 1 3/13
13
Electrical characteristics STT5N2VH5
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4. On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
I
D
= 1 mA, V
GS
= 0
Zero gate voltage
V
DS
= 20 V drain current (V
GS
= 0)
V
DS
= 20 V, T
C
=125 °C
Gate-body leakage current (V
DS
= 0)
V
GS
= ± 8 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 μ A
Static drain-source on-resistance
V
GS
= 4.5 V, I
D
= 2 A
V
GS
= 2.5 V, I
D
= 2 A
Min.
Typ.
Max.
Unit
20
1
10
V
μ A
μ A
± 100 nA
0.7
0.025
0.03
0.031
0.04
V
Ω
Ω
Symbol
C iss
C oss
C
Q
Q
Q rss g gs gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V
DS
= 16 V, f = 1 MHz,
V
GS
= 0
V
DD
= 16 V, I
D
= 2 A,
V
GS
= 4.5 V
(see
Figure 14
)
-
-
-
-
Min.
Typ.
Max.
Unit
-
367
92
-
pF pF
16
4.6
0.9
1 -
-
-
pF nC nC nC
Symbol t d(on) t r (V) t d (off) t f
Parameter
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 6. Switching times
Test conditions
V
DD
= 16 V, I
D
= 2 A,
R
G
= 4.7
Ω,
V
GS
= 4.5 V
(see
Figure 15
and
Figure 18
)
Min.
Typ.
Max.
Unit
-
-
-
4.8
14.4
17
4
-
-
-
ns ns ns ns
4/13 DocID026116 Rev 1
STT5N2VH5 Electrical characteristics
Symbol Parameter
Table 7. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage I
SD
= 2 A, V
GS
= 0 t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 2 A, di/dt = 100 A/
V
DD
= 16 V, T j
(see
Figure 18
= 150 °C
)
μ s
1.
Pulse width limited by safe operating area.
2.
Pulsed: pulse duration = 300 μ s, duty cycle 1.5%
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
5
20
1.1
10
24
4.8
ns nC
A
A
A
V
DocID026116 Rev 1 5/13
13
Electrical characteristics STT5N2VH5
2.1
I
D
(A)
Electrical characteristics (curves)
Figure 2. Safe operating area
AM18141v1
Figure 3. Thermal impedance
K
δ
=0.5
AM18127v1
DS(on)
100µs
0.1
0.2
10
10
-1
Operation in this area is
Limited by max R
1ms
0.01
0.02
0.05
pcb
1
10
-2
10ms
Single pulse
0.1
0.1
1
Tj=150°C
Tc=25°C
Single pulse
10 V
DS
(V)
Figure 4. Output characteristics
AM18128v1
I
D
(A)
V
GS
=2.5, 3.5, 4.5, 5.5, 6.5 V
20
1.5V
16
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0 t p
(s)
Figure 5. Transfer characteristics
AM18129v1
I
D
(A)
20
V
DS
=4V
16
12 12
8 8
4 4
0
0 1 2 3
0.5V
4 V
DS
(V)
0
0 0.2
0.4
0.6
0.8
1 1.2
V
GS
(V)
Figure 6. Gate charge vs gate-source voltage
AM18130v1
V
GS
(V)
V
DD
=10V
I
D
=2A
Figure 7. Static drain-source on-resistance
R
DS(on)
(m Ω )
26
V
GS
=4.5V
AM18132v1
6
25.6
4
2
0
0 2 4 6 Q g
(nC)
25.2
24.8
24.4
24
1 1.5
2 2.5
3 3.5
I
D
(A)
6/13 DocID026116 Rev 1
STT5N2VH5 Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM18133v1
Figure 9. Normalized gate threshold voltage vs temperature
AM18134v1
V
GS(th)
(norm)
1.2
I
D
=250µA
Ciss
1
100
Coss
0.8
0.6
0.4
10
0 4 8 12 16
Crss
V
DS
(V)
0.2
0
-55 -30 -5 20 45 70 95 120 T
J
(°C)
Figure 10. Normalized on-resistance vs temperature
AM18135v1
R
DS(on)
(norm)
I
D
=2A
V
GS
=10V
1.6
1.4
1.2
Figure 11. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm)
1.1
1.05
I
D
=1mA
AM18136v1
1
0.8
0.6
0.4
0.2
0
-55 -30 -5 20 45 70 95 120 T
J
(°C)
1
0.95
0.9
-55 -30 -5 20 45 70 95 120 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
AM18137v1
V
SD
(V)
T
J
=-55°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.5
1.5
2.5
T
J
=150°C
3.5
T
J
=25°C
4.5
I
SD
(A)
DocID026116 Rev 1 7/13
13
Test circuits
3 Test circuits
STT5N2VH5
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 16. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
V
D
I
D
L
2200
μ F
3.3
μ F
V
DD
D.U.T.
P w
AM01471v1
Figure 18. Switching time waveform t on td on t r t off td off t f
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
8/13 DocID026116 Rev 1
STT5N2VH5
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID026116 Rev 1 9/13
13
Package mechanical data
Figure 19. SOT23-6L package drawing
STT5N2VH5
7049714_K
10/13 DocID026116 Rev 1
STT5N2VH5 Package mechanical data
Dim.
Table 8. SOT23-6L package mechanical data mm
Min.
Typ.
E e
C
D
H
L
θ
A
A1 0.00
A2 1.00
b 0.36
0.14
2.826
1.526
0.90
2.60
0.35
0 °C
1.10
2.926
1.626
0.95
2.80
0.45
Figure 20. SOT23-6L recommended footprint
(a)
Max.
1.25
0.15
1.20
0.50
0.20
3.026
1.726
1.00
3.00
0.60
8 °C a.
All dimensions are in millimeters
DocID026116 Rev 1
7049714_K_footprint
11/13
13
Revision history STT5N2VH5
Date
20-Mar-2014
Revision
Table 9. Document revision history
Changes
1
First release. Part number previously included in datasheet
DocID023799
12/13 DocID026116 Rev 1
STT5N2VH5
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