STT3P2UH7
Pchannel 20 V, 0.087 Ω typ., 3 A STripFET™ H7
Power MOSFET in a SOT23-6L package
Datasheet - production data
SOT23-6L
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max I
D
STT3P2UH7 20 V 0.1 Ω @ 4.5
Very low on-resistance
Very low capacitance and gate charge
High avalanche ruggedness
3 A
Applications
Switching applications
Description
This P-channel Power MOSFET utilizes the
STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations.
Order code
STT3P2UH7
Table 1: Device summary
Marking Package
3L2U SOT23-6L
Packaging
Tape and reel
For the P-channel Power MOSFET, current and voltage polarities are reversed.
September 2016 DocID025027 Rev 3
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STT3P2UH7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package mechanical data ............................................................. 10
4.1
SOT23-6L package mechanical data .............................................. 10
5 Revision history ............................................................................ 12
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STT3P2UH7
1
Electrical ratings
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T pcb
= 25 °C
Drain current (continuous) at T pcb
= 100 °C
Drain current (pulsed)
Total dissipation at T pcb
= 25 °C
Storage temperature range
Operating junction temperature range
Value
20
± 8
3
1.9
12
1.6
- 55 to 150
Notes:
(1)
Pulse width limited by safe operating area
Symbol
Table 3: Thermal data
Parameter
R
thj-pcb
(1)
Thermal resistance junction-pcb max, single operation
Value
78
Unit
°C/W
Notes:
(1)
When mounted on 1inch² FR-4 board, 2 oz Cu
For the P-channel Power MOSFET, current and voltage polarities are reversed.
Unit
V
V
A
A
A
W
°C
DocID025027 Rev 3 3/13
Electrical characteristics
2 Electrical characteristics
STT3P2UH7
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: On /off states
Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown voltage I
D
= 250 µA, V
GS
= 0
I
DSS
Zero gate voltage drain current
V
DS
= 20 V, V
GS
= 0
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
V
GS
= ± 8 V, V
DS
= 0
20
V
DS
= V
GS
, I
D
= 250 µA 0.4
R
DS(on)
Static drain-source on-resistance
V
GS
= 4.5 V, I
D
= 1.5 A
V
GS
= 2.5 V, I
D
= 1.5 A
V
GS
= 1.8 V, I
D
= 1.5 A
Symbol Parameter
Table 5: Dynamic
Test conditions
1
V
µA
10 nA
0.087
1
0.1
V
Ω
0.11 0.13
Ω
0.145 0.18 Ω
Min. Typ. Max. Unit
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 10 V, f = 1 MHz,
V
GS
= 0
V
DD
= 10 V, I
D
= 3 A,
V
GS
= 4.5 V
(see Figure 14: "Gate charge test circuit" )
-
-
-
-
-
-
510
66
44
4.8
0.7
0.8
-
-
-
-
-
- pF pF pF nC nC nC
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 6: Switching times
Test conditions
V
DD
= 10 V, I
D
= 1.5 A,
R
G
= 4.7 Ω, V
GS
= 4.5 V
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Min. Typ. Max Unit
-
-
-
-
9
21
40
19
-
-
-
- ns ns ns ns
For the P-channel Power MOSFET, current and voltage polarities are reversed.
4/13 DocID025027 Rev 3
STT3P2UH7
Symbol
V
I
SD
t
Q rr
(1)
rr
RRM
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 7: Source drain diode
Test conditions
I
SD
= 1 A, V
GS
= 0
V
DD
= 10 V di/dt = 100 A/µs, I
SD
= 1 A
T j
= 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
-
12.5
5
0.8
1 V ns nC
A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
For the P-channel Power MOSFET, current and voltage polarities are reversed.
DocID025027 Rev 3 5/13
Electrical characteristics
2.1 Electrical characteristics (curves)
STT3P2UH7
For the P-channel Power MOSFET, current and voltage polarities are reversed.
I D
(A)
Figure 2: Safe operating area
GIPG300920141326MT
10
Ope
Li rat m ion
in thi ite d by
m s ar ea
DS ax
R
is
(o n)
1
100µs
10µs
1ms
Figure 3: Thermal impedance
δ
0.2
0.1
0.05
0.02
0.01
pcb
0.1
0.01
0.1
1
Tj=150°C
Tpcb=25°C
Single pulse
10 V DS (V)
Figure 4: Output characteristics
2
1
0
0
5
4
3
I D
(A)
Figure 5: Transfer characteristics
GIPG011020141520MT
7
V
DS
=2V
6
1 2 V
GS
(V)
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STT3P2UH7
Figure 6: Gate charge vs gate-source voltage
Figure 8: Capacitance variations
Electrical characteristics
Figure 7: Static drain-source on-resistance
GIPG031020140945MT
R DS(on)
(m Ω)
V GS =4.5V
92
91
90
89
88
87
86
85
0 0.5
1 1.5
2 2.5
I D (A)
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature
GIPG031020141106MT
R DS(on)
(norm)
1.5
V GS =4.5V
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-75 0 50 75 125 T J (°C)
Figure 11: Normalized V(BR)DSS vs temperature
GIPG031020141114MT
V (BR)DSS
(norm)
I D =1m A
1.06
1.04
1.02
1.00
0.98
0.96
0.94
-75 -25 25 75 125 T J (°C)
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Electrical characteristics
Figure 12: Source-drain diode forward characteristics
STT3P2UH7
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STT3P2UH7
3 Test circuits
Figure 13: Switching times test circuit for resistive load
Test circuits
Figure 14: Gate charge test circuit
Figure 15: Test circuit for inductive load switching and diode recovery times
DocID025027 Rev 3 9/13
Package mechanical data
4
4.1
Package mechanical data
STT3P2UH7
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
SOT23-6L package mechanical data
Figure 16: SOT23-6L package drawing
7049714_K
10/13 DocID025027 Rev 3
STT3P2UH7
Dim.
C
D
E e
H
L
θ
A
A1
A2 b
Package mechanical data
Table 8: SOT23-6L package mechanical data mm
Min. Typ. Max.
0.00
1.00
0.36
0.14
2.826
1.526
0.90
2.60
0.35
0°
1.10
2.926
1.626
0.95
2.80
0.45
1.25
0.15
1.20
0.50
0.20
3.026
1.726
1.00
3.00
0.60
8°
Figure 17: SOT23-6L recommended footprint
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Revision history
5
STT3P2UH7
Revision history
Date
18-Jul-2013
Revision
1
Table 9: Document revision history
Changes
First release.
03-Oct-2014
12-Sep-2016
2
3
Document status promoted from target data to production data.
Updated title, features and description in cover page. Updated
Section 2: "Electrical characteristics" and Section 4.1: "SOT23-6L package mechanical data" .
Minor text changes.
Updated Table 2: "Absolute maximum ratings" .
Minor text changes.
12/13 DocID025027 Rev 3
STT3P2UH7
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