STF45N10F7
N-channel 100 V, 0.0145
Ω
typ., 30 A, STripFET™ VII DeepGATE™
Power MOSFET in a TO-220FP package
Datasheet
-
production data
1
TO-220FP
2
3
Figure 1. Internal schematic diagram
'
Features
Order code V
DS
R
DS(on) max.
(1)
I
D
P
TOT
STF45N10F7 100 V 0.018
Ω
30 A 25 W
1.
@ VGS = 10 V
•
•
Ultra low on-resistance
100% avalanche tested
•
Applications
Switching applications
Description
This device utilizes the 7 th
generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power
MOSFET exhibits the lowest R
DS(on)
in all packages.
*
6
$0Y
Order codes
STF45N10F7
Table 1. Device summary
Marking Package
45N10F7 TO-220FP
Packaging
Tube
November 2013
This is information on a product in full production.
DocID024005 Rev 3 1/13 www.st.com
3
4
5
1
2
Contents
Contents
STF45N10F7
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 DocID024005 Rev 3
STF45N10F7 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
V
ISO
Total dissipation at T c
= 25 °C
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C)
T
J
T stg
Operating junction temperature
Storage temperature
1.
Pulse width limited by safe operating area.
Value
100
20
30
21.4
120
25
2500
-55 to 175
Unit
A
A
W
V
V
A
V
°C
°C
Symbol
R thj-case
R thj-amb
Table 3. Thermal resistance
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
6
62.5
Unit
°C/W
°C/W
DocID024005 Rev 3 3/13
13
Electrical characteristics STF45N10F7
(T
CASE
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4. On/off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage (V
GS
= 0)
I
D
= 1 mA
I
DSS
Zero gate voltage drain current (V
GS
= 0)
I
GSS
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage V
GS(th)
R
DS(on)
Static drain-source on- resistance
V
DS
V
DS
= 100 V
= 100 V; T
V
GS
= 20 V
C
=125 °C
V
DS
= V
GS
, I
D
= 250 μ A
V
GS
= 10 V, I
D
= 15 A
Min.
Typ.
Max.
Unit
100
2.5
-
10
100
100
4.5
0.0145
0.018
V
μ A
μ A nA
V
Ω
Symbol
C iss
C oss
C
Q rss g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V
DS
= 50 V, f =1 MHz,
V
GS
= 0
V
DD
V
GS
= 50 V, I
D
= 10 V
Figure 14
= 30 A
-
-
-
-
Min.
Typ.
Max.
Unit
-
1640
360
-
pF pF
25
25
5.1
12.2
-
-
-
pF nC nC nC
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 50 V, I
D
= 15 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Figure 13
Min.
Typ.
Max.
Unit
-
-
-
-
15
17
24
8 -
-
-
ns ns ns ns
4/13 DocID024005 Rev 3
STF45N10F7 Electrical characteristics
Symbol Parameter
Table 7. Source-drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area.
2.
Pulsed: pulse duration=300 μ s, duty cycle 1.5%.
I
SD
= 30 A, V
GS
= 0
I
SD
= 30 A, di/dt = 100 A/ μ s,
V
DD
= 80 V, T j
= 150 °C
Min.
Typ.
Max.
Unit
-
-
-
-
-
-
53
67
2.5
30
120
1.1
ns nC
A
A
A
V
DocID024005 Rev 3 5/13
13
Electrical characteristics STF45N10F7
I
D
(A)
Figure 2. Safe operating area
AM16108v1
Figure 3. Thermal impedance
K
δ
=0.5
AM16121v1
100
DS(on)
0.2
0.1
Oper
Limited b
10
-1
10
100µs
1
0.1
Tj=175°C
Tc=25°C
Single pulse
10 V
DS
(V)
1ms
10ms
0.01
0.1
1
Figure 4. Output characteristics
I
D
(A)
VGS=9, 10V
8V
AM16147v1
100
10
-2
0.05
0.02
0.01
Single pulse
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0 t p
(s)
Figure 5. Transfer characteristics
I
D
(A)
100
V
DS
=8V
AM16148v1
80 7V 80
60 60
40
6V
40
20 20
5V
0
0 2 4 6 8 V
DS
(V)
0
0 2 4 6 8 V
GS
(V)
Figure 6. Gate charge vs gate-source voltage
AM16111v1
V
GS
(V)
12
V
DD
=50V
I
D
=30A
Figure 7. Static drain-source on-resistance
R
DS(on)
(m Ω )
15.5
V
GS
=10V
AM16113v1
10
15
8
14.5
6
14
4
2
13.5
0
0 5 10 15 20 25 30 Q g
(nC)
13
5 10 15 20 25 30 I
D
(A)
6/13 DocID024005 Rev 3
STF45N10F7 Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM16114v1
Figure 9. Normalized gate threshold voltage vs temperature
AM16115v1
V
GS(th)
(norm)
I
D
=250µA
1.2
Ciss
1000 1
0.8
Coss
100 0.6
0.4
0
0 20 40 60 80
Crss
V
DS
(V)
0.2
-75 -50 -50 0 25 50 75 100 125150 T
J
(°C)
Figure 10. Normalized on-resistance vs temperature
AM16116v1
R
DS(on)
(norm)
I
D
=15A
V
GS
=10 V
2
Figure 11. Normalized V
(BR)DS
vs temperature
V (BR)DS
(norm)
1.04
1.03
I
D
=1mA
AM16119v1
1.02
1.5
1.01
1
1
0.99
0.5
0
-75 -50 -25 0 25 50 75 100 125 T
J
(°C)
0.98
0.97
0.96
-75 -50 -25 0 25 50 75 100 125 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
AM16118v1
V
SD
(V)
1
0.9
T
J
=-55°C
T
J
=25°C
0.8
0.7
0.6
T
J
=175°C
0.5
0.4
5 10 15 20 25 30 I
SD
(A)
DocID024005 Rev 3 7/13
13
Test circuits
3 Test circuits
STF45N10F7
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 16. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
V
D
I
D
L
2200
μ F
3.3
μ F
V
DD
D.U.T.
P w
AM01471v1
Figure 18. Switching time waveform t on td on t r t off td off t f
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
8/13 DocID024005 Rev 3
STF45N10F7
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID024005 Rev 3 9/13
13
Package mechanical data
Dim.
L4
L5
L6
L7
Dia
G1
H
L2
L3
F
F1
F2
G
A
B
D
E
STF45N10F7
28.6
9.8
2.9
15.9
9
3
Table 8. TO-220FP mechanical data mm
Min.
Typ.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
10/13 DocID024005 Rev 3
STF45N10F7
Figure 19. TO-220FP drawing
Package mechanical data
DocID024005 Rev 3
7012510_Rev_K_B
11/13
13
Revision history STF45N10F7
Date
03-Dec-2012
06-Dec-2012
11-Nov-2013
Revision
Table 9. Document revision history
Changes
1
2
3
First release.
Minor text changes
The part number STH110N10F7-2 has been moved to a separate datasheet
The part number STP110N10F7 has been moved to a separate datasheet
Document status promoted from preliminary to production data.
12/13 DocID024005 Rev 3
STF45N10F7
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