STP5NK90Z
STF5NK90Z
N-channel 900V - 2
Ω
- 4.5A - TO-220/TO-220FP
Zener - Protected SuperMESH™ MOSFET
General features
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
P
W
STP5NK90Z
STF5NK90Z
900 V
900 V
< 2.5 Ω 4.5 A 125W
< 2.5 Ω 4.5 A
(1)
30W
1.
Limited only by maximum temperature allowed
■
■
■
■
■
■
Extremely high dv/dt capability
Improved esd capability
100% avalanche rated
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
TO-220 TO-220FP
1
2
3
Internal schematic diagram
Obsolete Product(s) - Obsolete Product(s)
Order codes
Part number
STP5NK90Z
STF5NK90Z
Marking
P5NK90Z
F5NK90Z
Package
TO-220
TO-220FP
Packaging
Tube
Tube
August 2006 Rev 4 1/15 www.st.com
15
3
4
5
Contents
Contents
1
2
STP5NK90Z - STF5NK90Z
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Obsolete Product(s) - Obsolete Product(s)
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STP5NK90Z - STF5NK90Z Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage (V
GS
Drain-gate voltage (R
GS
Gate-source voltage
= 0)
= 20K Ω )
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25°C
=100°C
V
ESD (G-S) dv/dt
(3)
Total dissipation at T
C
= 25°C
Derating Factor
Gate source ESD (HBM-C=100pF, R=1.5K
Ω)
Peak diode recovery voltage slope
V
ISO
T
J
T stg
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
1.
Pulse width limited by safe operation area
2.
Limited only by maximum temperature allowed
3.
I
SD
≤ 4.5 A, di/dt ≤ 200A/µs, V
DD
≤
(BR)DSS
, T j
≤ T
JMAX
Value
STP5NK90Z STF5NK90Z
900
900
± 30
4.5
2.8
18
125
1
4.5
(2)
2.8
(2)
18
(2)
30
0.24
-
4000
4.5
-55 to 150
-55 to 150
2500
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
Table 2.
Thermal data
Symbol Parameter
R thj-case
R thj-a
T l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
Value
TO-220
1
62.5
300
TO-220FP
4.2
Unit
°C/W
°C/W
°C
Obsolete Product(s) - Obsolete Product(s)
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
4.5
230
A mJ
3/15
Electrical ratings STP5NK90Z - STF5NK90Z
1.1
Table 4.
Symbol
BV
GSO
Gate-source zener diode
Parameter
Gate-Source breakdown voltage
Test conditions
Igs=±1mA
(Open drain)
Min Typ.
Max Unit
30 V
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
Obsolete Product(s) - Obsolete Product(s)
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STP5NK90Z - STF5NK90Z Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
I
D
= 1mA, V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating, Tc=125°C
Gate body leakage current
(V
GS
= 0)
V
GS
= ± 20V
Gate threshold voltage V
DS
= V
GS
, I
D
= 100µA
Static drain-source on resistance
V
GS
= 10 V, I
D
= 2.25 A
Min.
Typ.
Max.
Unit
900
3 3.75
2
1
50
± 10
4.5
2.5
V
µA
µA
µA
V
Ω
Table 6.
Symbol g fs
(1)
Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit
C iss
C oss
C rss
Forward transconductance V
DS
=15V, I
D
= 2.25A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
4.8
1160
105
21.5
pF pF pF
C osseq
(2)
.
Equivalent output capacitance
V
GS
=0, V
DS
=0V to 720V 65.5
pF t d(on) t r t d(off) t f
Q g
Q gs
Q gd
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=400 V, I
D
= 2.2 A,
R
G
=4.7
Ω, V
GS
=10V
(see Figure 19 )
V
DD
=720V, I
D
= 4.4A
V
GS
=10V
(see
Figure 18 )
27
7.2
52
19
41.5
69
21.9
nC nC nC
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
2.
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss increases from 0 to 80% V
DSS
when V
DS
Obsolete Product(s) - Obsolete Product(s) ns ns ns ns
S
5/15
Electrical characteristics STP5NK90Z - STF5NK90Z
Table 7.
Symbol
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
Test conditions
I
SD
= 4.5A, V
GS
=0
I
SD
= 4.5 A, di/dt = 100 A/µs
V
DD
= 35 V
(see Figure 18
)
I
SD
= 4.5 A, di/dt = 100 A/µs
V
DD
= 35 V,
Tj = 150 °C
(see Figure 18
)
Min Typ.
Max Unit
4.5
A
635
5.9
18.5
712
4.66
13.1
18
1.6
A ns
µC
A
V ns
µC
A
Obsolete Product(s) - Obsolete Product(s)
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STP5NK90Z - STF5NK90Z
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Electrical characteristics
Figure 1.
Safe operating area for TO 220 Figure 2.
Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-220FP Figure 4.
Thermal impedance for TO-220FP
Obsolete Product(s) - Obsolete Product(s)
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Electrical characteristics
Figure 5.
Output characterisics
STP5NK90Z - STF5NK90Z
Figure 6.
Transfer characteristics
Figure 7.
Transconductance Figure 8.
Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Obsolete Product(s) - Obsolete Product(s)
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STP5NK90Z - STF5NK90Z Electrical characteristics
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
Figure 13. Source-drain diode forward characteristics
Figure 14. Avalanche Energy vs starting Tj
Figure 15. Normalized breakdown voltage vs temperature
Obsolete Product(s) - Obsolete Product(s)
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Test circuit Package mechanical data
3 Test circuit Package mechanical data
STP5NK90Z - STF5NK90Z
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive wafeform
Figure 18. Switching times test circuit for resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load switching and diode recovery times
Obsolete Product(s) - Obsolete Product(s)
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STP5NK90Z - STF5NK90Z
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Obsolete Product(s) - Obsolete Product(s)
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Package mechanical data STP5NK90Z - STF5NK90Z
DIM.
L5
L6
L7
Ø
H
L2
L3
L4
F
F1
F2
G
G1
D
E
A
B
MIN.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
TO-220FP MECHANICAL DATA mm.
TYP
16
MAX.
4.6
2.7
2.75
0.7
1
1.7
1.7
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
inch
TYP.
0.630
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
L6
L7
L3
L5
L4
1 2 3
L2
Obsolete Product(s) - Obsolete Product(s)
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STP5NK90Z - STF5NK90Z Package mechanical data
DIM.
J1
L
L1
L20
E e e1
F
H1
A b b1 c
D
L30
øP
Q
10
2.40
4.95
1.23
6.20
2.40
13
3.50
MIN.
4.40
0.61
1.15
0.49
15.25
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
MAX.
4.60
0.88
1.70
0.70
15.75
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
MIN.
0.173
0.024
0.045
0.019
0.60
16.40
28.90
3.85
2.95
0.147
0.104
inch
TYP.
0.645
1.137
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
MAX.
0.181
0.034
0.066
0.027
0.620
0.151
0.116
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Revision history STP5NK90Z - STF5NK90Z
Table 8.
Date
Revision history
Revision
06-Oct-2004
08-Sep-2005
14-Dec-2005
31-Jul-2005
1
2
3
4
Changes
First release
Complete datasheet
Inserted Ecopack indication
New template, no content change
Obsolete Product(s) - Obsolete Product(s)
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STP5NK90Z - STF5NK90Z
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