STP120N4F6
N-channel 40 V, 3.8 m Ω , 80 A, TO-220
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order code V
DSS
STP120N4F6 40 V
1.
Current limited by package
■
■
Standard threshold drive
100% avalanche tested
R
DS(on) max.
4.3 m Ω
I
D
80 A
(1)
Application
■
■
Switching applications
Automotive
Description
This device is a 40 V N-channel STripFET™ VI
Power MOSFET based on the ST’s proprietary
STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
R
DS(on)
in all packages.
TO-220
1
2
3
Figure 1.
Internal schematic diagram
$4!"OR
'
3
!-V
Table 1.
Device summary
Order code
STP120N4F6
Marking
120N4F6
Package
TO-220
Packaging
Tube
May 2011 Doc ID 018846 Rev 1 1/13 www.st.com
13
3
4
5
1
2
Contents
Contents
STP120N4F6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/13 Doc ID 018846 Rev 1
STP120N4F6 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(2)
P
TOT
T stg
T j
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Storage temperature
C
GS
= 0)
= 25 °C
Operating junction temperature
1.
Current limited by package
2.
Pulse width limited by safe operating area
C
C
= 25 °C
= 100 °C
Table 3.
Symbol
Thermal resistance
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case max
Thermal resistance junction-amb max
Table 4.
Symbol
Thermal resistance
Parameter
I
AR
(1)
E
AS
(2)
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
1.
Pulse width limited by Tj max
2.
Starting Tj = 25 °C, I
D
= 40 A, V
DD
= 25 V
Value
40
± 20
80
80
320
110
-55 to 175
A
A
W
Unit
V
V
A
°C
Value
1.36
62.5
Unit
°C/W
°C/W
Value
40
394
Unit
A mJ
Doc ID 018846 Rev 1 3/13
Electrical characteristics STP120N4F6
(T
CASE
= 25 °C unless otherwise specified)
Table 5.
Symbol
Static
Parameter
V
(BR)DSS
Drain-source breakdown
Voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= 20 V
V
DS
= 20 V,Tc = 125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 40 A
Min.
Typ.
Max.
Unit
40
2
3.8
1
10
± 100 nA
V
µA
µA
4
4.3
V m Ω
Table 6.
Symbol
C iss
C oss
C rss
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Q g
Q gs
Q gd
R
G
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Test conditions
V
DS
= 25 V, f=1 MHz,
V
GS
= 0 V
V
DD
= 20 V, I
D
= 80 A
V
GS
= 10 V
(see Figure 14)
f = 1 MHz open drain
Min
-
Typ.
Max.
Unit
3850
650
350
pF pF pF
-
-
65
20
16
1.5
-
nC nC nC
Ω
4/13 Doc ID 018846 Rev 1
STP120N4F6 Electrical characteristics
Table 7.
Symbol t d(on) t r t d(off) t f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 20 V, I
D
= 40 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 15)
Min.
Typ.
Max.
Unit
-
20
70
ns ns
-
40
20
ns ns
Table 8.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
Source-drain current
Source-drain current (pulsed)
I t
Q rr rr
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 40 A, V
GS
= 0
I
SD
= 80 A, di/dt = 100 A/µs,
V
DD
= 30 V
(see Figure 17)
Min.
Typ.
Max.
Unit
-
-
80
320
1.1
A
A
V
-
40
56
2.8
ns nC
A
Doc ID 018846 Rev 1 5/13
Electrical characteristics STP120N4F6
Figure 2.
Safe operating area
I
D
(A)
100 a
i s s a re
D
S
(on) a tion in thi a x R
Oper
Limited
Tj=175°C
Tc=25°C
S ingle p u l s e
AM0 8 627v1
100 µs
1m s
10
10m s
Figure 3.
Thermal impedance
1
0.1
0.1
1 10 V
D S
(V)
Figure 4.
Output characteristics
I
D
(A)
V
G S
=10V
3 50
3 00
250
200
150
100
50
0
0
5V
6V
AM0 8 62 8 v1
1 2 3 4 5 6 7
4V
8 V
D S
(V)
Figure 5.
Transfer characteristics
I
D
(A)
V
D S =
2V
3 00
200
150
100
50
0
0 1 2 3 4 5
AM0 8 629v1
V
G S
(V)
Figure 6.
Normalized B
VDSS
vs temperature Figure 7.
Static drain-source on resistance
AM0 8 6 3 0v1 AM0 8 6 3 1v1
BV
D SS
(norm)
R
D S (on)
(m
Ω
)
V
G S
=10V
1.15
4.5
1.10
1.05
4.0
1.00
3 .5
0.95
0.90
0.
8 5
0.
8 0
-75 -25 25 75 125 175 T
J
(°C)
3 .0
2.5
2.0
20 40 60 8 0 I
D
(A)
6/13 Doc ID 018846 Rev 1
STP120N4F6 Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM0 8 6 3 2v1
V
G S
(V)
C
(pF)
10
V
DD
=20V
I
D
= 8 0A
8 1000
6
4 100
AM0 8 6 33 v1
Ci ss
Co ss
Cr ss
2
0
0 10 20 3 0 40 50 60 70 Q g
(nC)
10
0.1
1 10 V
D S
(V)
Figure 10.
Normalized gate threshold voltage vs temperature
AM0 8 6 3 4v1
V
G S (th)
(norm)
1.2
Figure 11.
Normalized on resistance vs temperature
AM0 8 6 3 5v1
R
D S (on)
(norm)
V
G S
=10V
I
D
=40A
2.0
1.0
1.5
0.
8
1.0
0.6
0.4
0.5
0.2
-75 -25 25 75 125 175 T
J
(°C)
Figure 12.
Source-drain diode forward characteristics
V
S D
(V)
T
J
=-55°C
1.0
AM0 8 6 3 6v1
0.9
0.
8
T
J
=25°C
0.7
0.6
T
J
=175°C
0.5
0.4
10 20 3 0 40 50 60 70 8 0 I
S D
(A)
0
-75 -25 25 75 125 175 T
J
(°C)
Doc ID 018846 Rev 1 7/13
Test circuits
3 Test circuits
STP120N4F6
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped Inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
AM01470v1
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
V
D
V
(BR)D SS t on td on t r t off td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
8/13 Doc ID 018846 Rev 1
STP120N4F6
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and products status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 018846 Rev 1 9/13
Package mechanical data
D
D1
E e
A b b1 c e1
F
H1
J1
L
Table 9.
Dim.
TO-220 type A mechanical data
Min.
4.40
0.61
1.14
0.48
15.25
L1
L20
L30
∅
P
Q
6.20
2.40
13
3.50
10
2.40
4.95
1.23
3.75
2.65
mm
Typ.
1.27
16.40
28.90
STP120N4F6
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
10/13 Doc ID 018846 Rev 1
STP120N4F6
Figure 19.
TO-220 type A drawing
Package mechanical data
00159 88 _typeA_Rev_ S
Doc ID 018846 Rev 1 11/13
Revision history
Table 10.
Document revision history
Date Revision
17-May-2011 1 First release
Changes
STP120N4F6
12/13 Doc ID 018846 Rev 1
STP120N4F6
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