STS5N15F4
N-channel 150 V, 0.057
Ω
, 5 A, SO-8
STripFET™ DeepGATE™ Power MOSFET
Features
Type
STS5N15F4
V
DSS
150 V
■
■
■
■
N-channel enhancement mode
100% avalanched rated
Low gate charge
Very low on-resistance
R
DS(on) max
I
D
< 0.063 Ω 5 A
Application
■ Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances.
SO-8
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
STS5N15F4
Marking
5U15-
August 2009 Doc ID 16083 Rev 2
Package
SO-8
Packaging
Tape and reel
1/11 www.st.com
11
2/11
Electrical ratings STS5N15F4
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
T stg
T j
Drain-source voltage (V
Gate-source voltage
GS
= 0)
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Storage temperature
C
= 25 °C
Operating junction temperature
1.
Pulse width limited by safe operating area
C
= 25 °C
C
=100 °C
Table 3.
Symbol
Thermal data
Parameter
R thj-pcb
(1)
Thermal resistance junction-pcb max
1.
When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec
Table 4.
Symbol
I
AS
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by T j
max)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AS
, V
DD
= 140 V)
Value
150
± 20
5
3
20
2.5
-55 to 150
Unit
A
A
W
V
V
A
°C
Value
50
Unit
°C/W
Max value
5
125
Unit
A mJ
Doc ID 16083 Rev 2
STS5N15F4 Electrical characteristics
(T
J
= 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 150 V,
V
DS
= 150 V, @125 °C
V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 2.5 A
Min.
Typ.
Max.
Unit
150
2
1
10
±100 nA
V
µA
µA
4
0.057
0.063
V
Ω
Table 6.
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
R g
Gate input resistance
V
V
DS
GS
Test conditions
=25 V, f = 1 MHz,
= 0
V
DD
= 75 V, I
D
= 5 A
V
GS
=10 V
Figure 14 on page 7
f=1 MHz Gate DC Bias=0
Test signal level=20 mV open drain
Min.
Typ.
Max.
Unit
-
-
2710
180
69.5
48
10.8
13.7
-
pF pF pF nC nC nC
1.9
Ω
Doc ID 16083 Rev 2 3/11
Electrical characteristics
Table 7.
Symbol t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
STS5N15F4
Test conditions
V
DD
= 75 V, I
D
= 3 A,
R
G
=4.7 Ω, V
GS
=10 V
Figure 13 on page 7
Min.
Typ.
Max.
Unit
-
13.5
5.1
39.7
11.4
ns ns ns ns
Table 8.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
I t
Q rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
I
SD
= 6 A, V
GS
= 0
I
SD
= 6 A, di/dt = 100 A/µs,
V
R
= 120 V, T
J
= 150 °C
Figure 15 on page 7
Min.
Typ.
Max Unit
-
-
5
20
1.3
A
A
V
-
85.2
277.6
8.2
ns nC
A
4/11 Doc ID 16083 Rev 2
STS5N15F4 Electrical characteristics
Figure 2.
Safe operating area
I
D
(A)
100
10 a
i s s a re
D
S
(on) a tion in thi a x R
Oper
Limited
Tj=150°C
Tc=25°C
S inlge p u l s e
1
AM04995v1
Figure 3.
Thermal impedance
0.1
10m s
100m s
1 s
0.01
0.1
1 10 100 V
D S
(V)
Figure 4.
Output characteristics
I
D
(A)
70
V
G S
=10V
60
50
40
3 0
6V
5V
AM049 8 6v1
Figure 5.
Transfer characteristics
I
D
(A)
70
V
D S
=10V
60
50
40
3 0
20
10
0
0 5 10 15
4V
V
D S
(V)
20
10
0
0 2 4 6 8
AM049 8 7v1
10 V
G S
(V)
Figure 6.
Normalized B
VDSS
vs temperature Figure 7.
Static drain-source on resistance
AM049 8 9v1 AM049 88 v1
BV
D SS
(norm)
R
D S (on)
(
Ω
)
140
1.10
120
I
D
= 1 mA
V
G S
=10V
100
1.05
8 0
1.00
60
0.95
0.90
-50 -25 0 25 50 75 100 125 150 T
J
(°C)
40
20
0
0 1 2 3 4 5 I
D
(A)
Doc ID 16083 Rev 2 5/11
Electrical characteristics STS5N15F4
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM04990v1
V
G S
(V)
C (pF)
12
V
DD
=75V
I
D
=5A
2500
TJ=25°C f=1MHz
AM04991v1
10 2000 Ci ss
8
2000
6 1500
4
Cr ss
1000
500
2
0
0 10 20 3 0 40 50 Q g
(nC)
0
0 20 40 60
Co ss
8 0 100 120 140 V
D S
(V)
Figure 10. Normalized gate threshold voltage vs temperature
AM04992v1
V
G S (th)
(norm)
Figure 11. Normalized on resistance vs temperature
AM0499 3 v1
R
D S (on)
(norm)
1.10
2.5
1.00
I
D
= 250 µ A
2.0
V
G S
= 10 V
I
D
= 2.5 A
0.90
1.5
0.
8 0
1.0
0.70
0.60
0.5
0.50
-50 -25 0 25 50 75 100 125 150 T
J
(°C)
0
-50 -25 0 25 50 75 100 125 150 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
V
S D
(V)
T
J
=-55°C
AM04994v1
0.9
0.
8
T
J
=25°C
0.7
0.6
T
J
=175°C
0.5
0.4
0 10 20 3 0 40 50 I
S D
(A)
6/11 Doc ID 16083 Rev 2
STS5N15F4
3 Test circuits
Test circuits
Figure 13.
Switching times test circuit for resistive load
Figure 14.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
µ
F
3 .
3
µ
F
V
DD
V i
=20V=V
GMAX
2200
µ F
I
G
=CON S T
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 15.
Test circuit for inductive load switching and diode recovery times
Figure 16.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 µ H
3 .
3
µ F
1000
µ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
µ F
3 .
3
µ F
V
DD
P w
AM01470v1
Figure 17.
Unclamped inductive waveform
V
(BR)D SS
V
D
Figure 18.
Switching time waveform t on t off t r td on td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
Doc ID 16083 Rev 2 7/11
Package mechanical data
4 Package mechanical data
STS5N15F4
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
8/11 Doc ID 16083 Rev 2
STS5N15F4 Package mechanical data
DIM.
M
S
F
L
D
E e e3 a3 b b1
C c1
A a1 a2
MIN.
0.1
0.65
0.35
0.19
0.25
4.8
5.8
3.8
0.4
SO-8 MECHANICAL DATA
mm.
TYP MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
5.0
6.2
MIN.
0.003
0.025
0.013
0.007
0.010
45 (typ.)
0.188
0.228
1.27
3.81
4.0
1.27
0.6
8 (max.)
0.14
0.015
inch
TYP.
0.050
0.150
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023
Doc ID 16083 Rev 2 9/11
Revision history
Table 9.
Date
Document revision history
Revision
23-Jul-2009
03-Aug-2009
1
2
Changes
First release
Updated figures
6
,
7
,
10
and
11
STS5N15F4
10/11 Doc ID 16083 Rev 2
STS5N15F4
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Doc ID 16083 Rev 2 11/11
